The NASA Long Duration Exposure Facility (LDEF), a passive experimental satellite, was placed into low-Earth orbit by the Shuttle Challenger in April 1984. The LDEF spent an unprecedented 69 months in space. The flight and recovery of the LDEF has provided a wealth of information on the long-term space environmental effects of a variety of materials exposed to the low-Earth orbit environment. Surface characterization of LDEF materials included polymers, composites, thermal control paints, and aluminum. X-ray photoelectron spectroscopy (XPS}, Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and contact angle analysis were used to document changes in both the surface composition and surface chemistry of these materials. Detailed XPS analysis of the polymer systems, such as Kapton®, polyimide polysiloxane copolymers, and fluorinated ethylene propylene thermal blankets on the backside of the LDEF revealed significant changes in both the surface composition and surface chemistry as a result of exposure to the low-Earth orbit environment. Polymer systems such as Kapton®, polyimide polysiloxane copolymers, and polysulfone showed a common trend of decreasing carbon content and increasing oxygen content with respect to the control sample. Carbon ls curve fit XPS analysis of the composite samples, in conjunction with SEM photomicrographs, revealed significant ablation of the polymer matrix resin to expose the carbon fibers of the composite during exposure to the space environment. Surface characterization of anodized aluminum tray clamps, which were located at regular intervals over the entire LDEF frame, has provided the first results to evaluate the extent of contamination with respect to position on the LDEF. The XPS results clearly showed that the amount and state of both silicon and fluorine contamination were directly dependent upon the position of the tray clamp on the LDEF. / M.S.

Application of power MOSFETs in spaceborne power converters was simulated by exposing devices to low-dose-rate ionizing radiation. Both radiation-hardened and nonhardened devices were tested with constant and switched gate biases during irradiation. In addition, some of the devices were under load. The threshold-voltage shifts were strongly bias dependent. The threshold-voltage shift of the nonhardened parts was approximately dose-rate independent, while the hardened parts exhibited significant dose-rate dependence. A pre-anneal dose-rate dependence was found for the interface-state buildup of the switched and positively biased devices, but the results for the switched devices were qualitatively different than those for the positively biased devices. The buildup of interface trapped charge was found to be the primary contributor to mobility degradation, which results in reduced drive capability and slower operation of the devices. These results indicate that new methods need to be utilized to accurately predict the performance of power MOSFETs in space environments.

The effects of ionizing radiation on the breakdown-voltage degradation of power-MOSFET termination structures were examined through two-dimensional simulation. A wide variety of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results were compared with measurements made on selected structures. The principal ionizing radiation damaging mechanisms in MOS devices are discussed. Modifications made to an existing simulation program in order to simulate these complex field ring and field plate structures are described. Background information into how these termination structures improve the breakdown voltage and their sensitivities to positive interface charge buildup is investigated.

This work represents several years' research into the field of radiation hardening by design. The unique characteristics of a SiGe HBT, described in Chapter 1, make it ideally suitable for use in extreme environment applications. Chapter 2 describes the total ionizing dose effects experienced by a SiGe HBT, particularly those experienced on an Earth-orbital or lunar-surface mission. In addition, the effects of total dose are evaluated on passive devices. As opposed to the TID-hardness of SiGe transistors, a clear vulnerability to single-event effects does exist. This field is divided into three chapters. First, the very nature of single-event transients present in SiGe HBTs is explored in Chapter 3 using a heavy-ion microbeam with both bulk and SOI platforms [31]. Then, in Chapter 4, a new device-level SEU-hardening technique is presented along with circuit-design techniques necessarily for its implementation. In Chapter 5, the circuit-level radiation-hardening techniques necessarily to mitigate the effects shown in Chapter 3 are developed and tested [32]. Finally, in Chapter 6, the performance of the SiGe HBT in a cryogenic testing environment is characterized to understand how the widely-varying temperatures of outer space may affect device performance. Ultimately, the built-in performance, TID-tolerance, and now-developing SEU-hardness of the SiGe HBT make a compelling case for extreme environment electronics. The low-cost, high-yield, and maturity of Si manufacturing combine with modern bandgap engineering and modern CMOS to produce a high-quality, high-performance BiCMOS platform suitable for space-borne systems.