L’évolution des performances des dispositifs microélectroniques se heurte aux limites de la miniaturisation. Les contraintes mécaniques constituent un levier potentiel pour dépasser ces limitations. Il est cependant indispensable de bien maitriser leur génération et de connaitre leur influence sur le transport dans le canal. L’objectif de cette thèse vise à étudier l’évolution de la contrainte mécanique en technologie CMOS et son influence sur le transport électronique dans des technologies sub-20nm réalistes. Ce travail s’appuie sur des simulations mécaniques bidimensionnelles. Différentes architectures TriGate et FDSOI sont alors étudiées. Les contraintes obtenues sont comparées à des mesures issues de la diffraction électronique. Plusieurs méthodes de caractérisation électrique et d’extraction de paramètres de transistor MOS sont utilisées. Parmi elles figurent notamment la technique de l’extraction de la mobilité par magnétorésistance. Nous analysons les variations de mobilité en fonction des dimensions et de leur impact sur la contrainte mécanique. Enfin nous utilisons la simulation TCAD pour explorer le potentiel de nouvelles briques technologiques innovantes en voie de développement pour des générations ultérieures. Parmi elles, citons l’intégration des zones fortement contraintes par des source-drains en SiGe à fort pourcentage en germanium ou l’impact des relaxations introduites par l’utilisation des grilles sacrificielles au cours de la fabrication. Dans cette perspective, des simulations électriques basées sur une approche piézo-résistive deviennent indispensables. / In microelectronic, the device's performance evolution is limited by the down-scaling. The mechanical stresses are a potential mobility booster to overcome these limitations. However it is essential to properly control their process integration and to understand their influence on channel transport. The aim of this thesis is to study the mechanical stress evolution in CMOS technology and its impact on electronic transport in sub-20nm realistic technologies. This work is based on bidimensional mechanical simulations. Different architectures FDSOI and TriGate are then studied. The simulated stress maps are compared to experimental characterization from electron diffraction. Several methods of electrical characterization and extraction of MOS transistor are used, especially the magnetoresistance technique. We analyze the mechanical stress impact on the mobility variations according to geometrical dimensions. Finally, we use the TCAD simulation in order to explore the potential of new innovative devices under development for future generations. Among them, the integration of high germanium concentration in source-drain regions or the impact of relaxations induced by dummy gates in process flow. In this perspective, electrical simulations based on piezoresistive approach become essential.

In this dissertation, the electrical characteristics of generally used hydrogenated amorphous silicon (a-Si:H) TFTs in LCD and newly risen amorphous indium-gallium-zinc oxide (a-IGZO) TFTs were studied. For modern mobile display and large-size flat panel display application, the traditional thin-film transistor-liquid crystal display (TFT-LCD) technology confronts with a lot of challenges and problems. In general, flexible displays must exhibit some bending ability; however, bending applies mechanical strain to electronic circuits and affects device characteristics. Therefore, the electrical characteristics of a-Si:H TFTs fabricated on stainless steel foil substrates with uniaxial bending were investigated at different temperatures. Experimental results showed that the on-state current and threshold voltage degraded under outward bending. This is because outward bending will induce the increase of band tail states, affecting the transport mechanism at different temperatures. In addition, for practical operation, the electrical characteristics of a-Si:H TFTs under flat and bending situations after AC/DC stress at different temperatures were studied. It was found that high temperature and mechanical bending played important roles under AC stress. The dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress was also observed. Because a-Si:H is a photosensitive material, the high intensity backlight illumination will degrade the performance of a-Si:H TFTs. Thus, the photo-leakage current of a-Si:H TFTs under illumination was investigated at different temperatures. Experimental results showed that a-Si:H TFTs exhibited a pool performance at lower temperatures. The indirect recombination rate and the parasitic resistance (Rp) are responsible for the different photo-leakage-current trends of a-Si:H TFTs under varied temperature operations. To investigate the photo-leakage current, the a-Si:H TFTs were exposed to ultraviolet (UV) light irradiation. It was found that the photo current of a-Si:H TFTs was reduced after UV light irradiation. The detail mechanisms on reducing/increasing photo-leakage current by UV light irradiation were discussed. Recently, the oxide-based semiconductor TFT, especially a-IGZO TFT, is considered as one of promising candidates for active matrix flat-panel display. However, the a-IGZO TFT exists significant electrical instability issue and manufacturing problems. As a consequence, we investigated the effect of hydrogen incorporation on a-IGZO TFTs to reduce interface states between active layer and insulator. Experimental results showed that the electrical characteristics of hydrogen-incorporated a-IGZO TFTs were improved. The threshold voltage shift (£GVth) in hysteresis loop is suppressed from 4 V to 2 V due to the hydrogen-induced passivation of the interface trap states. Finally, we reported the effect of ambient environment on a-IGZO TFT instability. As a-IGZO TFTs were stored in atmosphere environment for 40 days, the transfer characteristics accompanying strange hump were observed during bias-stress. The hump phenomenon is attributed to the absorption of H2O molecule. Additionally, the sufficient electric field is also necessary to cause this anomalous transfer characteristic.

Vascular tissue engineering (VTE) with the use of polymeric scaffolds offers the potential to generate small-diameter (<6 mm) arteries. In this thesis, a degradable polar hydrophobic ionic (D-PHI) polyurethane porous scaffold was synthesized with the objective of demonstrating its potential application for VTE. D-PHI scaffold synthesis was optimized, maximizing isocyanate and methacrylate monomer conversion. Through the incorporation of a lysine-based crosslinker, scaffold mechanical properties and swelling were manipulated. Furthermore, D-PHI scaffolds demonstrated the ability to support the growth and adhesion of A10 vascular smooth muscle cells (VSMCs) during two weeks of culture. This study also investigated the effect of a double porogen approach on D-PHI scaffold properties, demonstrating an increase in the total scaffold porosity and pore interconnectivity. Specifically, it was found that the use of 10 wt% polyethylene glycol and 65 wt% sodium bicarbonate porogens resulted in a porous (79±3%) D-PHI scaffold with the mechanical properties (elastic modulus=0.16±0.03 MPa, elongation-at-yield=31±5%, and tensile strength=0.04±0.01 MPa) required to withstand the physiologically-relevant cyclic mechanical strain (CMS) that is experienced by VSMCs in vivo. Furthermore, the effects of uniaxial CMS (10% strain, 1 Hz, 4 weeks) on human coronary artery smooth muscle cells (hCASMCs), which were cultured in a porous D-PHI scaffold, were studied using a customized bioreactor. Four weeks of CMS was shown to yield greater DNA mass, more cell area coverage, a better distribution of cells within the scaffold, the maintenance of contractile protein expression and the improvement of tensile mechanical properties. The in vitro and in vivo degradation as well as the in vivo biocompatibility of D-PHI scaffolds were also investigated. Following their subcutaneous implantation in rats (100 days), porous D-PHI scaffolds demonstrated more cell/tissue infiltration within their pores and degraded in a controlled manner and at a faster rate when compared to in vitro studies (120 days), retaining the mechanical integrity required during neo-tissue formation. This thesis provides significant insight into the role of the D-PHI scaffold in combination with physiologically-relevant CMS in modulating VSMC proliferation and phenotype. The findings of this work can be used to tailor vascular tissue regeneration by regulating VSMC function in a directed manner.

Vascular tissue engineering (VTE) with the use of polymeric scaffolds offers the potential to generate small-diameter (<6 mm) arteries. In this thesis, a degradable polar hydrophobic ionic (D-PHI) polyurethane porous scaffold was synthesized with the objective of demonstrating its potential application for VTE. D-PHI scaffold synthesis was optimized, maximizing isocyanate and methacrylate monomer conversion. Through the incorporation of a lysine-based crosslinker, scaffold mechanical properties and swelling were manipulated. Furthermore, D-PHI scaffolds demonstrated the ability to support the growth and adhesion of A10 vascular smooth muscle cells (VSMCs) during two weeks of culture. This study also investigated the effect of a double porogen approach on D-PHI scaffold properties, demonstrating an increase in the total scaffold porosity and pore interconnectivity. Specifically, it was found that the use of 10 wt% polyethylene glycol and 65 wt% sodium bicarbonate porogens resulted in a porous (79±3%) D-PHI scaffold with the mechanical properties (elastic modulus=0.16±0.03 MPa, elongation-at-yield=31±5%, and tensile strength=0.04±0.01 MPa) required to withstand the physiologically-relevant cyclic mechanical strain (CMS) that is experienced by VSMCs in vivo. Furthermore, the effects of uniaxial CMS (10% strain, 1 Hz, 4 weeks) on human coronary artery smooth muscle cells (hCASMCs), which were cultured in a porous D-PHI scaffold, were studied using a customized bioreactor. Four weeks of CMS was shown to yield greater DNA mass, more cell area coverage, a better distribution of cells within the scaffold, the maintenance of contractile protein expression and the improvement of tensile mechanical properties. The in vitro and in vivo degradation as well as the in vivo biocompatibility of D-PHI scaffolds were also investigated. Following their subcutaneous implantation in rats (100 days), porous D-PHI scaffolds demonstrated more cell/tissue infiltration within their pores and degraded in a controlled manner and at a faster rate when compared to in vitro studies (120 days), retaining the mechanical integrity required during neo-tissue formation. This thesis provides significant insight into the role of the D-PHI scaffold in combination with physiologically-relevant CMS in modulating VSMC proliferation and phenotype. The findings of this work can be used to tailor vascular tissue regeneration by regulating VSMC function in a directed manner.

Healthy bone is bombarded with many different mechanical strain derived signals during normal daily activities. One of these signals is present as a direct connective tissue strain on the cells. However, there is also the presence of an electrically charged streaming potential during this straining. The electrical potential is created from the movement of charged fluid through the small bone porosities. To date, little focus has been applied to elucidating the possible synergistic effects of these two stimulants. The aim of this project was to evaluate the effects of mechanical strain and indirect electrical stimulation upon the development of bone forming osteoblast cells and any possible synergistic effects of the two stimulants. This aim was achieved by using a novel device, designed and developed with the capability of creating a cell substrate surface strain along with an exogenous electrical stimulant individually or at the same time. Proliferation and differentiation were determined as a measure of cellular development. The indirect electrical stimulation was achieved through the use of a pulsed electromagnetic field (PEMF) while the mechanical strain was produced from dynamic stretching of a deformable cell substrate. Strain and strain rate were modelled from recent studies proposing that relatively high frequency, low strain osteogenic mechanical stimulants are more indicative of what healthy bone would be experiencing during normal activities. The PEMF signal mimicked a clinically available bone growth stimulator signal. Results showed a PEMF stimulus on monolayers of SaOS-2 and MG-63 osteoblast-like cells leads to a depression in proliferation. A concomitant increase in alkaline phosphatase production was also observed for the SaOS-2 cultures, but not for the MG-63 cell line. It was hypothesised that this was due to the MG-63's lack of phenotypic maturity compared to the SaOS-2 cells. Mechanical strain of the cell substrate alone, at a relatively high frequency (5Hz) but small strain, did not significantly effect either cell proliferation or differentiation for the MG-63 cells. However, when the electrical and mechanical stimulants were combined a significant increase in cellular differentiation occurred with MG-63 cultures, revealing a possible synergistic effect of these two stimulants on the development of bone cells.