The transmission of electric power over long distances has historically posed challenges. However, the advent of high-voltage engineering has not only addressed distance barriers and power losses in electricity transmission and distribution, but it has also significantly improved the efficiency and transmission capacity of power grids. However, the use of high-voltage techniques has presented new challenges in identifying suitable insulator materials capable of withstanding high electrical stresses associated with elevated voltages. A significant issue arising from these extreme electrical stresses is the occurrence of partial discharges (PDs). Those are electrical sparks or pulses in the magnitude order of pico- or nano-coulombs (pC or nC) emitted from high voltage conductors due to the presence of impurities, contaminants or defects in their insulation system. PDs pose a serious threat to the insulation material due to their aggressive nature in breaking down weak points or links inside the insulation system leading to short-circuit and system failure. Means of offline or conventional testing of power assets against partial discharges has proven to be extremely precise but it is often an unavailable option since it requires a total power shutdown. In this paper, the performance of existing online PD detection techniques is tested and evaluated in terms of performance against conventional PD monitoring methods. Five non-intrusive detectors including an infrared camera (IR-camera), an ultrasonic sensor , a temperature and relative humidity sensor (TRH-sensor), high-frequency current transformer (HFCT sensor) and transient earth voltage antenna (TEV-antenna) were tested in a laboratory experiment for detection of PDs emitted by artificially-created defects inside a medium-voltage cable termination. The results showed varying sensitivity levels among the sensors, with the HFCT sensor demonstrating the highest sensitivity to all types and magnitudes of PDs. The IR-camera and ultrasonic sensor also showed potential, while the TRH-sensor exhibited poor sensitivity. The TEV-antenna had limited reliability. The findings of this study are that the HFCT system proved to be highly reliable for online PD monitoring, followed by the IR-camera and ultrasonic sensor, while the TEV-antenna and TRH-sensor showed lower reliability. In future work, further research on testing the HFCT system on-site can be conducted along with performing longer thermographic detection tests using the IR-camera to further investigate their potential in online PD detection. / Överföring av elektrisk kraft över långa avstånd har historiskt sett varit utmanande. Införandet av högspänningsteknik har inte bara övervunnit avståndsbarriärer och effektförluster vid överföring och distribution av elkraft, utan det har också avsevärt förbättrat kraftnätens effektivitet och överföringskapacitet. Användningen av högspänningsteknik har dock också inneburit nya utmaningar såsom utveckling av lämpliga isoleringsmaterial som tål höga elektriska påfrestningar vid höga spänningar. Ett betydande problem som härrör från dessa extrema elektriska spänningar är förekomsten av partiella urladdningar. Dessa urladdningar identifieras vara elektriska gnistor eller pulser i storleksordningen pico- eller nanocoulombs (pC eller nC) som emitteras från högspänningsledare på grund av närvaron av föroreningar eller defekter i närliggande isoleringssystem. PD:er utgör ett allvarligt hot mot isoleringsmaterialet på grund av deras aggressiva natur för att bryta ner svaga punkter eller länkar i isoleringssystemet, vilket kan leda till kortslutningar och systemfel. Konventionella metoder för att testa nätkomponenter mot partiella urladdningar har visat sig vara extremt noggranna, men detta är ofta inte ett tillgängligt alternativ eftersom det kräver ett totalt strömavbrott för att utföras. I denna studie testades och utvärderades prestandan hos befintliga metoder för online-detektering av partiell urladdning i förhållande till konventionella övervakningsmetoder. Fem icke-invasiva detektorer, inklusive en infraröd kamera, en ultraljudssensor, en temperatur- och relativ fuktighetssensor, en högfrekvent strömtransformator och en transient jordspänningsantenn, testades i ett laboratorieexperiment för att upptäcka partiella urladdningar orsakade av artificiellt skapade defekter i en mellanspänningskabelavslutning. Resultaten visade varierande känslighetsnivåer bland sensorerna, där högfrekventa strömtransformatorn visade den högsta känsligheten för alla typer och storlekar av partiella urladdningar. Den infraröda kameran och ultraljudssensorn visade också potential, medan temperatur- och relativ fuktighetssensorn visade låg känslighet. Den transienta jordspänningsantennen hade begränsad tillförlitlighet. Slutsatsen av denna studie är att den högfrekventa strömtransformatorn visade sig vara mycket tillförlitlig för online-övervakning av partiella urladdningar, följt av den infraröda kameran och ultraljudssensorn, medan den transienta jordspänningsantennen, temperatur- och fuktighetssensorn visade lägre tillförlitlighet. I framtida forskning kan ytterligare undersökningar av det högfrekventa strömtransformatorsystemet utföras på plats, tillsammans med längre termografiska detekteringstester med hjälp av den infraröda kameran för att ytterligare undersöka deras potential för onlinedetektering av partiella urladdningar.

The thesis discuses an integration of photovoltaic power stations to electric network. The first part describes connecting conditions of small sources to distribution system, including administrative requirements, feasibility study, and requirements to the energy meters, measuring, control devices, switching devices and protection. The second part is aimed to describe problems of the photovoltaic system. Solar radiation generating and reducing of its intensity incident upon the earth surface are described in this part. The quantum of produced electric power depends on climatic conditions in the fixed area, seasons, etc. This work also discusses the types of photovoltaic cells and their actual efficiency. Inverters are further important components of the photovoltaic system. The parameters of the inverters have a great influence on the total actual efficiency of the photovoltaic system. Different methods of the photovoltaic panels’ connection with the inverters and their advantages and disadvantages are also mentioned. The supporting structure of the photovoltaic panels and eventually transformer are further important components of photovoltaic system. The work also analyze the methods of connection of the photovoltaic power station to distributive low voltage and medium voltage network, electric energy accumulation and possibilities of the sale of produced electric energy. The large number of the connected photovoltaic power stations has negative influences to electric network. The third part contains the design of a photovoltaic power plant with a capacity of 516,24 kWp on the scoped area in southern Bohemia. The project documentation for the location where the power plant is designed is also made. It contains the design of photovoltaic panels, the design of the inverters to get an optimal power load. This part also contains a calculation of the photovoltaic system losses and the design of transformer and the cable junction calculation of the distributive system. The feasibility study of the power plant connected to distributive system is also conducted. Its delivery rate will be connected to the distribution point Řípov (110/22 kV). The calculation results show us that this photovoltaic power plant can be linked to the distribution system. The final part of this paper contains an economic estimate of the photovoltaic power plant operating and the calculation of the return. An Economic return is influenced by the wide range of values that affect the total return rate. The calculation of an operating economy is made for several variants. The return rate in refer to contemporary redemption price for 2010 with no consideration for a bank loan is 7 years. If we consider the bank loan it would be 12 years. The penetrative reduction of the redemption price is expected for 2011. Calculation works with the decline of 30 %. It would extend the rate of return to 11 years without a bank loan or to 22 years with the bank loan. The bank loan is considered to cover 80 % of the investment.

Les procédés bipolaires semi-conducteurs complémentaires à oxyde de métal (BiCMOS) peuvent être considérés comme étant la solution la plus généralepour les produits RF car ils combinent la fabrication sophistiquée du CMOSavec la vitesse et les capacités de conduction des transistors bipolaires silicium germanium(SiGe) à hétérojonction (HBT). Les HBTs, réciproquement, sontles principaux concurrents pour combler partiellement l'écart de térahertzqui décrit la plage dans laquelle les fréquences générées par les transistors etles lasers ne se chevauchent pas (environ 0.3 THz à 30 THz). A_n d'évaluerles capacités de ces dispositifs futurs, une méthodologie de prévision fiable estsouhaitable. L'utilisation d'un ensemble hétérogène d'outils et de méthodes desimulations permet d'atteindre successivement cet objectif et est avantageusepour la résolution des problèmes. Plusieurs domaines scientifiques sont combinés, tel que la technologie de conception assistée par ordinateur (TCAO),la modélisation compacte et l'extraction des paramètres.Afin de créer une base pour l'environnement de simulation et d'améliorerla confirmabilité pour les lecteurs, les modèles de matériaux utilisés pour lesapproches hydrodynamiques et de diffusion par conduction sont introduits dèsle début de la thèse. Les modèles physiques sont principalement fondés surdes données de la littérature basées sur simulations Monte Carlo (MC) ou dessimulations déterministes de l'équation de transport de Boltzmann (BTE).Néanmoins, le module de TCAO doit être aussi étalonné sur les données demesure pour une prévision fiable des performances des HBTs. L'approchecorrespondante d'étalonnage est basée sur les mesures d'une technologie depointe de HBT SiGe pour laquelle un ensemble de paramètres spécifiques àla technologie du modèle compact HICUM/L2 est extrait pour les versionsdu transistor à haute vitesse, moyenne et haute tension. En s'aidant de cesrésultats, les caractéristiques du transistor unidimensionnel qui sont généréesservent de référence pour le profil de dopage et l'étalonnage du modèle. Enélaborant des comparaisons entre les données de références basées sur les mesureset les simulations, la thèse fait progresser l'état actuel des prévisionsbasées sur la technologie CAO et démontre la faisabilité de l'approche.Enfin, une technologie future de 28nm performante est prédite en appliquantla méthodologie hétérogène. Sur la base des résultats de TCAO, leslimites de la technologie sont soulignées. / Bipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified. / Bipolare komplementäre Metall-Oxid-Halbleiter (BiCMOS) Prozesse bietenhervorragende Rahmenbedingungen um Hochfrequenzanwendungen zurealisieren, da sie die fortschrittliche Fertigungstechnik von CMOS mit derGeschwindigkeit und Treiberleistung von Silizium-Germanium (SiGe) Heterostruktur-Bipolartransistoren (HBTs) verknüpfen. Zudem sind HBTs bedeutendeWettbewerber für die teilweise Überbrückung der Terahertz-Lücke, derFrequenzbereich zwischen Transistoren (< 0.3 THz) und Lasern (> 30 THz).Um die Leistungsfähigkeit solcher zukünftigen Bauelemente zu bewerten, isteine zuverlässige Methodologie zur Vorhersage notwendig. Die Verwendungeiner heterogenen Zusammenstellung von Simulationstools und Lösungsansätzenerlaubt es dieses Ziel schrittweise zu erreichen und erleichtert die Fehler-_ndung. Verschiedene wissenschaftliche Bereiche werden kombiniert, wie zumBeispiel der rechnergestützte Entwurf für Technologie (TCAD), die Kompaktmodellierungund Parameterextraktion.Die verwendeten Modelle des hydrodynamischen Simulationsansatzes werdenzu Beginn der Arbeit vorgestellt, um die Simulationseinstellung zu erläuternund somit die Nachvollziehbarkeit für den Leser zu verbessern. Die physikalischenModelle basieren hauptsächlich auf Literaturdaten von Monte Carlo(MC) oder deterministischen Simulationen der Boltzmann-Transportgleichung(BTE). Für eine zuverlässige Vorhersage der Eigenschaften von HBTs muss dieTCAD Kon_guration jedoch zusätzlich auf der Grundlage von Messdaten kalibriertwerden. Der zugehörige Ansatz zur Kalibrierung beruht auf Messungeneiner fortschrittlichen SiGe HBT Technologie, für welche ein technologiespezifischer HICUM/L2 Parametersatz für die high-speed, medium-voltage undhigh-voltage Transistoren extrahiert wird. Mit diesen Ergebnissen werden eindimensionaleTransistorcharakteristiken generiert, die als Referenzdaten fürdie Kalibrierung von Dotierungspro_len und physikalischer Modelle genutztwerden. Der ausführliche Vergleich dieser Referenz- und Messdaten mit Simulationengeht über den Stand der Technik TCAD-basierender Vorhersagenhinaus und weist die Machbarkeit des heterogenen Ansatzes nach.Schlieÿlich wird die Leistungsfähigkeit einer zukünftigen Technologie in28nm unter Anwendung der heterogenen Methodik vorhergesagt. Anhand derTCAD Ergebnisse wird auf Engpässe der Technologie hingewiesen.