京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第18098号 / 理博第3976号 / 新制||理||1573(附属図書館) / 30956 / 京都大学大学院理学研究科化学専攻 / (主査)教授 吉村 一良, 教授 北川 宏, 教授 寺西 利治 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM

This Diploma thesis deals with properties of CdTe detectors. This material is ranked among optical sensitive group. This thesis can be thematically divided into two basic parts. The first part describes properties of both elements and the chemical adduct. Selected properties show perfections of the material, which are specializing it to optical area of application. The end of this part contains description of contact metal-semiconductor. This problem is important to comprehension principle the material contact. In second part there were making many measurements. For more accurately compare were first measurements doing without light and then with light. During making measurement was changed wave length and temperature of sample. Key factors were Volt-Ampere characteristics and resistance result with changed temperature and wave length impact to the sample. For better accuracy measurements were done many times. All of data from measurement were cultivate by PC Easyplot programme.

In this paper, the performance simulations of a novel ultra-compact balanced coherent photodetector for operation at a wavelength of 1.5 mu m are presented and design proposals for future fabrication processes are provided. It consists of a compact 2x2 MMI that is evanescently coupled into a germanium MSM photodetection layer. The simulations demonstrate dark current less than 10 nA, capacitance less than 20 fF, and optical bandwidth in the 10-30 GHz range. We propose utilizing the simplicity of direct wafer bonding to bond the detection layer to the output waveguides to avoid complicated epitaxial growth issues. This ultra-compact device shows promise as a high-speed, low-cost integrated silicon photonics solution for the telecommunications infrastructure.

The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. The DC and RF performance of 4H-SiC RF Power MESFETs have been studied through two-dimensional electro-thermal simulations using commercial software MEDICI and ISE. The simulated characteristics of the transistors were compared with the measurement results. Performance degradation of transistors under self-heating and high operating temperatures have been analyzed in terms of gate and drain characteristics, power density, high frequency current gain and power gain. 3D thermal simulations have been performed for single and multi-finger MESFETs and the simulated junction temperatures and temperature profiles were compared with the results from electro-thermal simulations. The reduction in drain current caused by self-heating was found to be more prominent for transistors with more fingers and it imposes a limitation on both the output power and the power density (in W/mm) of multi-fingered large area devices. Thermal issues for design of high power multi-fingered SiC MESFETs were also investigated. A couple of useful ways to reduce the self-heating effects were discussed. Trap-induced performance instabilities of the devices were analyzed by carrying out DC, transient, and pulse measurements at room and elevated temperatures. Electrical characteristics of 4H-SiC BJTs have been measured. A reduction in current gain at elevated temperatures was observed. Based on the collector current-voltage diagram measured at three different ambient temperatures the junction temperature was extracted using the assumption that the current gain only depends on the temperature. Temperature measurements have been carried out for SiC BJTs. Thermal images of a device under operation were recorded using an infrared camera. 3D thermal simulations were conducted using FEMLAB. Both the simulations and the measurement showed a significant temperature increase in the vicinity of the device when operated at high power densities, thus causing the decrease of the DC current gain. The junction temperatures obtained from the thermal imaging, simulation and extraction agree well.

<p>The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. </p><p>The DC and RF performance of 4H-SiC RF Power MESFETs have been studied through two-dimensional electro-thermal simulations using commercial software MEDICI and ISE. The simulated characteristics of the transistors were compared with the measurement results. Performance degradation of transistors under self-heating and high operating temperatures have been analyzed in terms of gate and drain characteristics, power density, high frequency current gain and power gain. 3D thermal simulations have been performed for single and multi-finger MESFETs and the simulated junction temperatures and temperature profiles were compared with the results from electro-thermal simulations. The reduction in drain current caused by self-heating was found to be more prominent for transistors with more fingers and it imposes a limitation on both the output power and the power density (in W/mm) of multi-fingered large area devices. Thermal issues for design of high power multi-fingered SiC MESFETs were also investigated. A couple of useful ways to reduce the self-heating effects were discussed. Trap-induced performance instabilities of the devices were analyzed by carrying out DC, transient, and pulse measurements at room and elevated temperatures. </p><p>Electrical characteristics of 4H-SiC BJTs have been measured. A reduction in current gain at elevated temperatures was observed. Based on the collector current-voltage diagram measured at three different ambient temperatures the junction temperature was extracted using the assumption that the current gain only depends on the temperature. Temperature measurements have been carried out for SiC BJTs. Thermal images of a device under operation were recorded using an infrared camera. 3D thermal simulations were conducted using FEMLAB. Both the simulations and the measurement showed a significant temperature increase in the vicinity of the device when operated at high power densities, thus causing the decrease of the DC current gain. The junction temperatures obtained from the thermal imaging, simulation and extraction agree well. </p>

Thesis (M. S.)--Florida State University, 2005. / Advisor: Dr. Mark H. Weatherspoon, Florida State University, College of Engineering, Dept. of Electrical and Computer Engineering. Title and description from dissertation home page (viewed Sept. 19, 2005). Document formatted into pages; contains viii, 70 pages. Includes bibliographical references.

Thesis (M.S.) -- Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Inorganic nanomaterials are a class of advanced materials, which have been widespread in both science and nanotechnology. The use of nanomaterials in several areas makes nanoscience an interdisciplinary field. Some challenges, such as the type of synthesis and toxicity control should be explored, mainly because those materials can be controlled at the nanometer level by means of the synthesis variables. In this work, we performed the synthesis of cadmium telluride (CdTe) nanoparticles with the surface capped by a mixture of organic thiol stabilizers such as mercaptopropionic acid (MPA), cysteine (CYS), glutathione (GLU), and biopolymer sodium alginate (ALG). Synthesis were performed by two distinct aqueous methods hydrothermal and reflux and the synthesis parameters such as pH and ratio Cd/Te/stabilizer were fixed based on the literature. The colloidal dispersions obtain present remain stable for at least 3 months (time observed so far). Optical absorption spectra of all mixtures of CdTe - stabilizers presented a red shift with increasing synthesis time, and furthermore, the position of this band was at a wavelength below the bulk CdTe (790 nm). The emission spectra in all cases were intense, with little difference between them. The diameter of the particles, calculated from an empirical equation from the of maximum absorption wavelength, were comparable compared to those obtained by X-ray diffraction (XRD) (Scherrer equation) as well as transmission electron microscopy (TEM). The results from the three techniques agreed very well for CdTe via reflux. However for hydrothermal synthesis it was not possible to determine the diameter of the particles by TEM due to morphology of nanostructured aggregates. The crystal structures as obtained by XRD indicating the incorporation of sulfur atoms in the CdTe structure, in agreement to the literature for this type of synthesis. Infrared spectroscopy confirmed the presence of organic stabilizers on the surface of CdTe. The morfology of samples identified by TEM/HRTEM was different depending on the method of syntesis aggregates for the hydrothermal samples and isolated particles for reflux samples so the mechanisms of nucleation and growth were proposed oriented attachment (OA) and Ostwald ripening (OR) for synthesis CdTe-hydrothermal and reflux, respectively. / Os nanomateriais inorgânicos são uma classe de materiais avançados, que vêm sendo difundidos tanto em ciência como em nanotecnologia. O uso destes materiais está localizado em diversas áreas de atuação, fazendo com que tal classe seja interdisciplinar. Alguns desafios como o tipo de síntese e a toxidade devem ser explorados, principalmente porque estes materiais podem ser controlados a nível nanométrico por meio das variáveis de síntese. Neste trabalho, foi realizada a síntese de nanopartículas de Telureto de Cádmio (CdTe) com a superfície coberta pela mistura de estabilizantes orgânicos tióis tais como, ácido mercaptopropiônico (MPA), cisteína (CYS) e glutationa (GLU) e o biopolímero alginato de sódio (ALG). Esta síntese foi realizada por dois métodos aquosos, via hidrotermal e refluxo, e os parâmetros de síntese como pH e relação Cd/Te/estabilizante foram fixos com base na literatura. As dispersões coloidais obtidas apresentaram-se com estabilidade coloidal por pelo menos 3 meses (tempo observado até o momento). Os espectros eletrônicos de absorção óptica de todas as misturas de CdTe-estabilizantes se apresentaram largos, com deslocamento para o vermelho com o aumento do tempo de síntese, e além disso, a posição desta banda estava em comprimento de onda abaixo do CdTe bulk (790 nm), indicando confinamento quântico. Os espectros de emissão em todos os casos foram intensos e com pouca diferença entre os mesmos. Os diâmetros das partículas foram calculados usando-se uma fórmula empírica, a partir do comprimento de onda máximo de absorção e comparado aos resultados obtidos por difratometria de raios X (XRD) (equação de Scherrer) e por microscopia eletrônica de transmissão (TEM). Os resultados das três técnicas corroboram entre si para as amostras de CdTe via refluxo. Contudo, no caso do hidrotermal, não foi possível determinar os diâmetros por TEM porque a morfologia foi de agregados nanoestruturados. As estruturas cristalinas forma obtidas por XRD, indicando a incorporação de átomos de enxofre na estrutura do CdTe, estando de acordo com a literatura para o tipo de síntese. A espectroscopia de infravermelho confirmou a presença dos estabilizantes orgânicos na superfície do CdTe. A morfologia identificada por TEM/HRTEM das amostras sintetizadas pelas duas sínteses foi diferente agregados para a síntese hidrotermal e partículas isoladas para refluxo sendo que os mecanismos proposto para nucleação e crescimento foram o oriented attachment (OA) e o Ostwald ripening (OR) para CdTe-hidrotermal e o CdTe-refluxo, respectivamente.

No description available.

Silicon carbide is a semiconductor with a wide bandgap of up to 3.2 eV and is capable of operating in extreme conditions, high temperature and high energy modes. This work focuses on the investigation of electrical and optical properties of monocrystalline SiC by various methods including Raman spectroscopy, volt-ampere characteristics, L-TCT and spectroscopic techniques. The adhesion of contacts and the influence of different contact materials on the ability to detect ionizing radiation are also studied to optimize the technology of preparation of quality SiC-based radiation detectors.