No description available.

No description available.

No description available.

Component design for a proposed 60 GHz short-range low-power high-data-rate On-Off Keying receiver in a 90 nm CMOS process is presented. The advances in RFCMOS and the commercial need for high data-rate wireless links are discussed as the enabling technology and motivation for research into the development of 60 GHz CMOS radios for wireless personal area networks. System level calculations are presented validating the feasibility of the proposed receiver topology for its target application. The design and simulation results of a 60 GHz low noise amplifier, 60 GHz direct-conversion demodulator (which has generated an invention disclosure), and a baseband amplifier are discussed in detail. Also presented is a discussion of device modeling techniques for millimeter-wave designs. Measured results are presented for the demodulator. Finally, recommendations for future work are presented.

Metal oxide thin films are dynamic materials that have revolutionised the nature of semiconductor and electronic thin film devices. Recently, progress has stagnated in some aspects due to the increasingly complex deposition apparatus required, and the dearth of suitable precursor complexes of certain ???difficult??? metals. This thesis seeks to address both of these issues. The application of a precursor complex, Mg6(O2CNEt2)12 to the SSCVD of MgO thin films delivered the highest quality films ever reported with this technique. The resultant films were found to be of purely (111) orientation. Due to the nature of the precursor, the chemical reactions occurring at the surface during SSCVD growth result in a high growth rate, low flux environment and films of (111) orientation have been achieved without the amorphous underlayer. This finding has important implications for buffer layers in perovskite thin film devices. The unprecedented precursor chemistry has been used as a basis for the extremely high quality material produced, along with the unusual, yet beneficial structural morphology it possesses. A new range of barium complexes with single encapsulating ligands have been prepared for use in chemical vapour deposition (CVD) of BaTiO3 thin films. A novel pathway to an unprecedented class of barium carbamates is reported, and also new dianionic bis ??-ketoesterates and their barium, strontium, and calcium analogues were synthesised. High resolution mass spectrometry showed the barium bis ??-ketoesterate derivatives to be monomeric, and preliminary testing indicated some volatility in these species. Insights were gained into the likely successful pathways to building a volatile heterobimetallic precursor complex containing an alkaline earth metal. The knowledge of intimate mixing in heterobimetallic precursor complexes was extended by some novel chemistry to develop the first mixed Zn/Mg carbamato cluster complexes. These complexes were found to be excellent SSCVD precursors for ZnxMg1-xO thin films. Thin films were deposited with these precursors and exhibited a single preferred orientation, with a constant amount of magnesium throughout the bulk of the films. Investigation of the light emission properties of the films revealed significant improvements in the structural order commensurate with the incorporation of magnesium, and the formation of the ZnxMg1-xO alloy.

Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.

Thesis (Ph.D.)--McMaster University, 2005. / Supervisor: M. Jamal Deen. Includes bibliographical references (leaves 154-164). Also available online.

Thesis (Ph.D.)--McMaster University, 2005. / Supervisor: M. Jamal Deen. Includes bibliographical references (leaves 154-164). Also available online.

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Dissertation (Ph.D.)--Auburn University, 2006. / Abstract. Vita. Includes bibliographic references.