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Characterization of III-V Compound Semiconductor MOS Structures with Titanium Oxide as Gate OxideYen, Chih-Feng 19 December 2007 (has links)
Due to the high electron mobility compared with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs) and indium phosphide (InP)) high-speed devices. The high-k material TiO2 not only has high dielectric constant (k = 35-100) but has well lattice match with GaAs and InP substrate. Therefore, titanium oxide (TiO2) was chosen to be the gate oxide in this study.
The major problem of III-V compound semiconductors is known to have poor native oxide on it and leading to the Fermi level pinning at the interface of oxide and semiconductor. The C-V stretch-out phenomenon can be observed and the leakage current is high. The higher dielectric constant of poly-crystalline TiO2 film grown on GaAs can be obtained by metal organic chemical vapor deposition (MOCVD). But the high leakage current also occurred due to the grain boundary and defects in the poly-crystalline TiO2 film.
The surface passivation of GaAs with (NH4)2Sx treatment (S-GaAs) could prevent it from oxidizing after cleaning and improve the interface properties of MOSFET. The fluorine from liquid phase deposited SiO2 solution can passivate the grain boundary of poly-crystalline MOCVD-TiO2 film and interface state. The high dielectric constant and low leakage current of fluorine passivated MOCVD-TiO2/S-GaAs can be obtained. The leakage current densities are 3.41 x 10-7 A/cm2 and 1.13 x 10-6A/cm2 at ¡Ó1.5 MV/cm, respectively. The Dit is 4.6 x 1011 cm-2eV-1 at the midgap. The dielectric constant can reach 71.
In addition, the post-metallization annealing (PMA) is another efficiency way to improve the MOCVD-TiO2 quality. The mechanism of PMA process is from the reaction between the aluminum contact and hydroxyl groups existed on TiO2 film surface. Then the active hydrogen is produced to diffuse through the oxide and passivate the oxide traps. For PMA (350oC)-MOCVD-TiO2 on S-GaAs MOS structure, the leakage current densities can reach 2.5 x 10-7 and 5 x 10-7 A/cm2 at ¡Ó1.5 MV/cm, respectively. The dielectric constant and the Dit are 66 and 5.96 x 1011 cm-2eV-1, respectively.
In order to avoid the leakage current from grain boundary of poly-crystalline TiO2, and liquid phase deposited TiO2 (LPD-TiO2) at low temperature can preserve the function of sulfur passivation. Therefore, the amorphous LPD-TiO2 was deposited on S-GaAs. The leakage current densities are 1.04 x 10-7 and 1.91 x 10-7 A/cm2 at ¡Ó0.5 MV/cm, respectively. The Dit is 3.2 x 1011 cm-2eV-1 and the dielectric constant is 48. The LPD-TiO2 film was deposited on (NH4)2Sx treated InP (S-InP), and the 4 x 100 £gm2 enhancement mode N channel InP MOSFET with LPD-TiO2 as gate oxide was fabricated, which showed the good characteristic. The normalized maximum gm is 43 mS/mm at VG = 1.3 V for VDS fixed at 1 V. The maximum calculated £gFE of 348 cm2/V¡Es at VDS = 1 V is obtained.
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ANALYSE DES DEFAUTS INDUITS PAR IRRADIATIONS IONISANTE ET A EFFETS DE DEPLACEMENT DANS DES STRUCTURES MCT (MOS CONTROLLED THYRISTOR) A PARTIR DE MESURES ELECTRIQUES ET PAR SIMULATION /Haddi, Ahmed. Charles, Jean-Pierre. January 1999 (has links) (PDF)
Thèse de doctorat : SCIENCES ET TECHNIQUES : Metz : 1999. / 1999METZ030S. 60 ref.
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Etude et modélisation d'un point mémoire eDRAM sans capacité, et conception de circuit mémoire haute densitéMalinge, Pierre Allard, Bruno January 2006 (has links)
Thèse doctorat : Electronique. Composants et Systèmes Electriques : Villeurbanne, INSA : 2005. / Titre provenant de l'écran-titre. Bibliogr. p. [161]-165.
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Macro-modélisation des structures MOS "haute tension" intégrées avec prise en compte de l'auto-échauffementCanepari, Anna Chante, Jean-Pierre January 2007 (has links)
Thèse doctorat : Microélectronique : Villeurbanne, INSA : 2006. / Titre provenant de l'écran-titre. Bibliogr. à la fin de chaque chapitre.
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Caractérisations électriques des structures MOS à nanocristaux de Ge pour des applications mémoires non volatilesKanoun, Mehdi Souifi, Abdelkader. January 2005 (has links)
Thèse doctorat : Microélectronique : Villeurbanne, INSA : 2004. / Titre provenant de l'écran-titre. Bibliogr. à la fin de chaque chapitre.
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Etude, fabrication et propriétés de transport de transistors CMOS associant un diélectrique haute permittivité et un canal de conduction haute mobilitéWeber, Olivier Ducroquet, Frédérique. January 2006 (has links)
Thèse doctorat : Dispositifs de l'Electronique Intégrée : Villeurbanne, INSA : 2005. / Titre provant de l'écran-titre. Bibliogr. p. 183-197.
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Remote news reports over digital cellular networksNeale, Jason January 1999 (has links)
No description available.
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Single event effects in commercial memory devices in the space radiation environmentUnderwood, Craig Ian January 1996 (has links)
No description available.
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Modeling and simulation of negative bias temperature instability : degradation of field-effect transistors /Entner, Robert. January 2010 (has links)
Zugl.: Wien, Techn. University, Diss., 2007. / Hergestellt on demand.
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Mesoscopic phenomena in nanometer scale MOS devicesWirth, Gilson Inácio. Unknown Date (has links)
University, Diss., 1999--Dortmund. / Dateiformat: PDF.
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