The construction and characterization of ultra-low noise semiconductor-based mode-locked lasers as frequency comb sources with multi-gigahertz combline-to-combline spacing is studied in this dissertation. Several different systems were built and characterized. The first of these systems includes a novel mode-locking mechanism based on phase modulation and periodic spectral filtering. This mode-locked laser design uses the same intra-cavity elements for both mode-locking and frequency stabilization to an intra-cavity, 1,000 Finesse, Fabry-Pérot Etalon (FPE). On a separate effort, a mode-locked laser based on a Slab-Coupled Optical Waveguide Amplifier (SCOWA) was built. This system generates a pulse-train with residual timing jitter of

In this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme Chirped Pulse Amplification (XCPA) is investigated. An eXtreme Chirped Pulse Oscillator (XCPO) implemented with a Theta cavity also based on a semiconductor gain is presented for generating more than 30ns frequency-swept pulses with more than 100pJ of pulse energy and 3.6ps compressed pulses directly from the oscillator. The XCPO shows the two distinct characteristics which are the scalability of the output energy and the mode-locked spectrum with respect to repetition rate. The laser cavity design allows for low repetition rate operation < 100MHz. The cavity significantly reduces nonlinear carrier dynamics, integrated self phase modulation (SPM), and fast gain recovery in a Semiconductor optical Amplifier (SOA). Secondly, a functional device, called a Grating Coupled Surface Emitting Laser (GCSEL) is investigated. For the first time, passive and hybrid mode-locking of a GCSEL is achieved by using saturable absorption in the passive section of GCSEL. To verify the present limitation of the GCSEL for passive and hybrid mode-locking, a dispersion matched cavity is explored. In addition, a Grating Coupled surface emitting Semiconductor Optical Amplifier (GCSOA) is also investigated to achieve high energy pulse. An energy extraction experiment for GCSOA using stretched pulses generated from the colliding pulse semiconductor mode-locked laser via a chirped fiber bragg grating, which exploits the XCPA advantages is also demonstrated. Finally, passive optical cavity amplification using an enhancement cavity is presented. In order to achieve the interferometric stability, the Hänsch-Couillaud Method is employed to stabilize the passive optical cavity. The astigmatism-free optical cavity employing an acousto-optic modulator (AOM) is designed and demonstrated. In the passive optical cavity, a 7.2 of amplification factor is achieved with a 50 KHz dumping rate.

This dissertation details work on high repetition rate semiconductor mode-locked lasers. The qualities of stable pulse trains and stable optical frequency content are the focus of the work performed. First, applications of such lasers are reviewed with particular attention to applications only realizable with laser performance such as presented in this dissertation. Sources of timing jitter are also reviewed, as are techniques by which the timing jitter of a 10 GHz optical pulse train may be measured. Experimental results begin with an exploration of the consequences on the timing and amplitude jitter of the phase noise of an RF source used for mode-locking. These results lead to an ultralow timing jitter source, with 30 fs of timing jitter (1 Hz to 5 GHz, extrapolated). The focus of the work then shifts to generating a stabilized optical frequency comb. The first technique to generating the frequency comb is through optical injection. It is shown that not only can injection locking stabilize a mode-locked laser to the injection seed, but linewidth narrowing, timing jitter reduction and suppression of superfluous optical supermodes of a harmonically mode-locked laser also result. A scheme by which optical injection locking can be maintained long term is also proposed. Results on using an intracavity etalon for supermode suppression and optical frequency stabilization then follow. An etalon-based actively mode-locked laser is shown to have a timing jitter of only 20 fs (1Hz-5 GHz, extrapolated), optical linewidths below 10 kHz and optical frequency instabilities less than 400 kHz. By adding dispersion compensating fiber, the optical spectrum was broadened to 2 THz and 800 fs duration pulses were obtained. By using the etalon-based actively mode-locked laser as a basis, a completely self-contained frequency stabilized coupled optoelectronic oscillator was built and characterized. By simultaneously stabilizing the optical frequencies and the pulse repetition rate to the etalon, a 10 GHz comb source centered at 1550 nm was realized. This system maintains the high quality performance of the actively mode-locked laser while significantly reducing the size weight and power consumption of the system. This system also has the potential for outperforming the actively mode-locked laser by increasing the finesse and stability of the intracavity etalon. The final chapter of this dissertation outlines the future work on the etalon-based coupled optoelectronic oscillator, including the incorporation of a higher finesse, more stable etalon and active phase noise suppression of the RF signal. Two appendices give details on phase noise measurements that incorporate carrier suppression and the noise model for the coupled optoelectronic oscillator.

Dans un premier temps, nous avons optimisé des structures laser VECSEL dans le but de maximiser la puissance émise par une gestion thermique adéquate. Les structures conçues et fabriquées contiennent une zone active à base d’InP pour l’émission à 1.55 µm. Un miroir hybride métal- semiconducteur à base d’un miroir de Bragg GaAs/AlAs est intégré à la zone active. La structure semiconductrice est intégrée avec différents substrats hôtes de bonne conductivité thermique sur la base de simulations numériques, et les performances des dispositifs fabriqués sont évaluées expérimentalement sous pompage optique Les VECSELs intégrés sur substrat diamant CVD présentent les puissances de sortie les plus élevées, et sont de bons candidats pour l’émission de puissance (> 500 mW) à 1.55 µm et pour les expériences de blocage de modes. D’un autre côté nous montrons que l’intégration d’un substrat de cuivre par voie électrochimique représente une approche flexible et faible-coût, pour atteindre une puissance de sortie de plusieurs dizaines de mW jusqu’à ~ 200 mW.Dans un second temps, nous avons développé des SESAMs à 1.55 µm. La région active est formée de puits quantiques InGaAsN/GaAs, couplés par effet tunnel à des plans GaAsN à recombinaison rapide. Des temps caractéristiques de recouvrement de l’absorption de quelques picosecondes à la dizaine de picoseconde sont ainsi mesurés.La résonance de la microcavité SESAM est ajustée de manière contrôlée grâce à des couches de phase spécifques épitaxiées en surface de la structure. La gravure sélective couche par couche des couches de phase permet d’accorder la profondeur de modulation et la dispersion de vitesse de groupe (GDD) de la structure SESAM.Finalement nous avons assemblé les structures SESAM et VECSEL dans une cavité à quatre miroirs pour obtenir un fonctionnement laser en régime de blocage de modes passif. Nous observons que la durée de l’impulsion de blocage de modes peut être réduite de plusieurs picosecondes (~ 10 ps), jusqu’à moins de la picoseconde (0.9 ps) en accordant la GDD de la structurre SESAM. / In a first step, we have developed and implemented VECSEL structures, aiming at maximizing the laser output power through a proper thermal management. The fabricated VECSEL chips contain an InP-based active region for emission at 1.55 µm. A hybrid metal-GaAs/AlAs Bragg mirror is used to achieve efficient dissipation of the heat generated in the active region. The semiconductor structure is integrated to various host substrates and the VECSEL performances are investigated numerically and experimentally. VECSELs with CVD diamond substrates have the best overall performance and are promising for large output power (> 500 mW), while electroplated copper substrate is demonstrated to be a flexible and cost-effective approach for thermal management in 1.55 µm OP-VECSEL in order to achieve output power of several tens of mW to ~ 200 mW. The second part of the work is devoted to the development of SESAM structures at 1.55 µm. The structures include an active region consisting of InGaAsN / GaAs quantum wells surrounding by GaAsN planes, allowing to achieve absorption relaxation time of few picoseconds. The SESAM microcavity resonance was adjusted via a selective etching of phase layers specifically designed to control the magnitude of both the modulation depth and the intra cavity group delay dispersion of the device.Finally, assembling VECSEL and SESAM chips in a cavity, we observe experimentally that the mode-locked pulse duration could be reduced from several picoseconds to less than one picosecond when the resonance and group delay dispersion of the SESAM microcavity are tuned.

L’objectif de la thèse concerne le développement de lasers à semi-conducteur à blocage de modes qui présentent un grand intérêt pour les systèmes de télécommunications optiques à très haut débit (WDM, OTDM, radio sur fibre…).Les nanostructures à base de boites quantiques (BQs) possèdent des propriétés remarquables grâce au confinement 0D des porteurs de charge. Leur utilisation dans les lasers à blocage de modes a donné lieu à des avancées importantes en terme de génération d’impulsions très courtes à haute fréquence et avec un très faible niveau de bruit.Durant la thèse, une optimisation de la croissance des structures lasers à BQs InAs sur substrat InP(113)B a été menée afin d’accroître le nombre de plans de BQs tout en assurant une forte densité pour maximiser le gain modal. Le travail a également porté sur l’utilisation de substrats InP(001) désorienté et l’obtention d’empilement de plans de BQs de faible anisotropie. Une optimisation de la technologie des lasers monomode de type « shallow-ridge » a été réalisée sur substrat conventionnel InP (001). Nous avons confirmé l’intérêt des BQs pour améliorer l’efficacité d’injection grâce à une réduction de la diffusion latérale des porteurs. Le blocage de modes a été obtenue sur des lasers à mono-section et double sections à base de BQs InAs élaborés sur InP (001) désorienté et InP(113))B, à des fréquences de répétitions allant de 20 jusqu’à 83 GHz. Les spectres RF présentent des pics de faibles largeurs (jusqu’à 20 kHz) qui indique un faible bruit de phase. Enfin, une étude a été menée sur le comportement en température des lasers à blocage de modes passif à double sections à base de BQs ou de BatQs InAs/InP. / Semiconductor mode-locked lasers (MLLs) are at the centre of interest for a large range of photonic applications (WDM, OTDM, radio over fiber ...). Because of their outstanding performance coming from the 0D carrier confinement, the use of quantum dots (QDs) nanostructures as active material for MLLs has led to the generation of ultra-short and high frequency pulses with low noise. For the present thesis studies were carried out on InAs based QDs laser growth on InP (113)B in order to increase the number of stacked QDs layers while maintaining a high density of QDs to maximize modal gain. Work has also been focused on layers stacking and obtaining real QDs using misoriented (001) InP substrate. Structural qualities have been confirmed using AFM, polarized photoluminescence and broad laser characterization. A shallow ridge waveguide optimization technology has been realized on conventional (001) InP substrate. We have confirmed the improved injection efficiency of QDs due to lower lateral carrier diffusion. Mode-locking was obtained on single and two sections InAs based QDs lasers elaborated on (001) InP misoriented substrate and (113)B InP substrate, from 20 to 83 GHz. The RF linewidth at -3 dB is as low as 20 kHz indicating a ML regime with a low phase noise. Finally, we have studied the temperature effect on the QDs and QDashes InAs/InP multi-section MLLs.

Mid-infrared (IR) lasers (2-12 μm) have found tremendous applications in medical surgeries, spectroscopy, remote sensing, etc. Nowadays, mid-IR emissions are usually generated from semiconductor lasers, gas lasers, and solid-state lasers based on nonlinear wavelength conversion. However, they usually have disadvantages including poor beam quality, low efficiency, and complicated configurations. Mid-IR fiber lasers have the advantages of excellent beam quality, high efficiency, inherent simplicity, compactness, and outstanding heat-dissipating capability, and have attracted significant interest in recent years. In this dissertation, I have studied and investigated Q-switched and mode-locked fiber lasers in the mid-IR wavelength region. My dissertation includes six chapters: In Chapter 1, I review the background of mid-IR lasers and address my motivation on the research of mid-IR fiber lasers; In Chapter 2, I present the experimental results of microsecond and nanosecond Er³⁺-doped and Ho³⁺-doped fiber lasers in the 3 μm wavelength region Q-switched by Fe²⁺:ZnSe and graphene saturable absorbers. In Chapter 3, Q-switched 3 μm laser fiber amplifiers are investigated experimentally and theoretically and their power scaling are discussed. In Chapter 4, a graphene mode-locked Er³⁺-doped fiber lasers at 2.8 μm with a pulse width < 50 ps is presented. In Chapter 5, extending the spectral range of mid-IR fiber lasers by use of nonlinear wavelength conversion is addressed and discussed. I have proposed 10-watt-level 3-5 μm Raman lasers using tellurite fibers as the nonlinear gain medium and pumped by our Er³⁺-doped fiber lasers at 2.8 μm. In the last chapter, the prospect of mid-IR fiber laser is addressed and further research work is discussed.

The mode-locked laser diode (MLLD) finds a lot of use in applications such as ultra high-speed data processing and sampling, large-capacity optical fiber communications based on optical time-division multiplexing (OTDM) systems. Integrating mode-locked lasers on silicon makes way for highly integrated silicon based photonic communication devices. The mode-locked laser being used in this thesis was built with Hybrid Silicon technology. This technology, developed by UC Santa Barbara in 2006, introduced the idea of wafer bonding a crystalline III- V layer to a Silicon-on-insulator (SOI) substrate, making integrated lasers in silicon chips possible. Furthermore, all mode-locked lasers produce phase noise, which can be a limiting factor in the performance of optical communication systems, specifically at higher bit rates. In this thesis, we design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode to lower phase noise and reduce the drive power requirements of the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the impedance of the MLLD is necessary and was carried out. Then, a narrowband solution of two 0.1 pF chip capacitors in parallel is considered and examined as an impedance matching network for an operating frequency of 20 GHz. The hybrid silicon laser was packaged together in a module including the impedance- matching circuit for efficient RF injection. In conclusion, a 6 dB reduction of power required to drive the laser diode, as well as approximately a 10 dB phase noise improvement, was measured with the narrow-band solution. Also, looking ahead to possible future work, we discuss a step recovery diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique takes into account the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum pulse shaping.

Proprietary.

While the development of bright pulses produced in free space devices can be found in a large set of applications and research equipment all over the world. The production of dark pulses in a free-space device has not been shown prior to this work. In this work a method of producing free space mode-locked laser in a straight laser cavity using intra-cavity loss induced by periodic nonlinear interactions mediated by a mode-locked source. We are able to show the existence of a dark pulse propagating inside of the cavity. An extensive analysis of the generation of the dark pulse is made using a homemade cross correlator. A symmetric dark pulse with a 10 ps width is achieved with a 90% modulation depth. This work will be used in a continued project involving passive two-color pulse synchronization. / Framtagningen av ljusa pulser i kristall baserade lasrar finns i en stor utsträckning av tillämpningar inom forskning och industri. Utvecklandet av mörkpulskällor i kristall baserade kaviteter har till vår kunskap inte tagits fram. I detta arbete presenteras en metod att utveckla en modlåst mörkpuls laser i en rak kavitet som utnyttjar intrakavitär förlust som periodiskt induceras av en ickelinjär interaktion som styrs av en ljus modlåst källa. Vi kan visa att en mörk puls propagerar inuti kaviteten. En utförlig analys och experiment med hjälp av en hemagjord korskorrelator belyser hur den mörka pulsen kan formas. En symmetrisk mörk puls formas med en 10 ps bredd och över 90 % modulations djup. Detta arbete kommer användas i ett framtida projekt inom passiv tvåfärgs puls synkronisation.

A novel dispersion-managed breathing-mode semiconductor mode-locked ring laser is developed. The "breathing-mode" designation derives from the fact that intracavity pulses are alternately stretched and compressed as they circulate around the ring resonator. The pulses are stretched before entering the semiconductor gain medium to minimize the detrimental strong integrating self-phase modulation and to enable efficient pulse amplification. Subsequently compressed pulses facilitate bleaching the semiconductor saturable absorber. The intracavity pulse compression ratio is higher than 50. Down chirping when compared to up chirping allows broader mode-locked spectra and shorter pulse generation owing to temporal and spectral semiconductor gain dynamics. Pulses as short as 185 fs, with a peak power of ~230 w, and a focused intensity of ~4.6 gw/cm2 are generated by linear down chirp compensation and characterized by shg-frog method. To our knowledge, this is the highest peak power and the shortest pulse generation from an electrically pumped all-semiconductor system. The very good agreement between the simulated and the measured results verifies our understanding and ability to control the physical mechanisms involved in the pulse shaping within the ring cavity. Application trends such as continuum generation via a photonic crystal fiber, two-photon fluorescence imaging, and ultrafast pulse source for pump-probe experiments are demonstrated.