Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to determine electrical activities and impurity compositions at extended defects in multicrystalline silicon (mc-Si) samples. The results provide, for the first time, information regarding the chemical species present at defects whose electrical activity has previously been measured. A new APT specimen fabrication process was developed with the ability to select a specific defect for APT analysis. Development of the APT specimen fabrication process proceeded by first selecting and optimising the preferential etching for nano-scale defect delineation. Three etchants were evaluated, namely Secco, Sirtl and Dash, from which the Secco etch was selected. Three parameters were optimised to produce etch pits with geometries that meet the requirements imposed by APT specimen fabrication methods. The optimum parameters were 0.05M potassium dichromate concentration, 20°C etch temperature, and 30sec etch time. In the second stage, marking techniques were developed in order for the defects to be located throughout the APT specimen fabrication process. However, it became apparent that the conventional APT specimen fabrication method could not be used to fabricate APT specimens containing selected defects in a mc-Si sample. This led to the development of a novel APT specimen fabrication approach which allowed APT specimens to be fabricated, reproducibly, containing grain boundaries and isolated dislocations. In order to evaluate accurately iron contamination in mc-Si, four atom probe parameters were optimised to maximise detection sensitivity: the evaporation rate, the laser beam energy, the pulse repetition rate and the specimen temperature. The optimisation process can be divided in to two parts. In the first part, a matrix of pre-sharpened single-crystal silicon specimens was subjected to a variety of experimental parameters. The optimised parameters were determined to be 0.3% evaporation rate, 0.5nJ beam energy, 160kHz repetition rate and 55K specimen temperature. The second part was to determine the iron detection efficiency –the percentage of detected Fe ions that can be correctly identified as Fe– and sensitivity using these parameters to analyse a specially prepared iron calibration specimen. The values were determined to be a detection efficiency of about 35% and sensitivity of 54ppm or 2.70x10¹⁸ atom/cm³. The APT specimen fabrication process and the optimised APT analysis parameters were used to analyse four extended defects in mc-Si samples subjected to three different processing conditions, namely gold-contaminated, as-grown and phosphorus diffusion gettering (PDG). The important aspects of the analysis are listed below: • Gold was not detected at the grain boundary and its associated dislocations in the gold-contaminated specimen. The binding enthalpy of gold to such defects is thus less than 0.63eV. • Iron was not detected in any specimen. • Copper was observed at the grain boundary in the as-grown specimen in the form of individual atoms as well as clusters with diameters ranging between 4nm and 9nm. The electrical activity of the grain boundary was about 58%. • Nickel and carbon were detected at the grain boundary in the post-PDG specimen with the former having platelet structures with diameters and thicknesses ranging between 4nm-7nm and 2nm-4nm, respectively. The recombination strength of the defect was about 22%. • Two nickel clusters were found at the isolated dislocation in the post-PDG specimen. The clusters were spherical with an average diameter of 10nm. The distance between the two clusters was 35nm. The recombination strength of the defect was about 4%.

Nous avons étudié in situ et en temps réel la structure de grains du silicium multi-cristallin issue de la solidification dirigée en utilisant l’imagerie X synchrotron. La radiographie X permet de suivre l’évolution de l’interface solide/liquide et de caractériser sa dynamique et sa morphologie. La topographie X nous donne des informations sur la structure de grains formée, les contraintes et les défauts issus de la solidification. Nous avons montré l’importance la préparation de l’état initial de la solidification en particulier pour les expériences de reprise sur germe. L’analyse de la morphologie de l’interface solide/liquide nous a permis de caractériser la surfusion cinétique du front de solidification, de comprendre l’évolution des sillons de joints de grains et d’analyser les mécanismes de compétition de grains ainsi que de révéler l’impact des impuretés sur la structure de grains formée à l’issue de la solidification. Le phénomène de maclage a aussi été observé dans nos expériences et nous avons démontré que les macles dans le silicium multi-cristallin peuvent être des macles de croissance. Deux types de macles ont été identifiés et le phénomène de compétition de grains en présence de macles étudié. / We studied in situ and real-time the grain structure of multi-crystalline silicon from directional solidification using synchrotron X-ray imaging techniques. X-ray Radiography gives information on the evolution, dynamics and morphology of the solid/liquid interface. X- ray Topography gives more information on the grain structure, strains and defects that occur during solidification step. We showed the importance of the preparation of the initial stage of solidification in particular in the experiments where solidification is initiated from seed. The analysis of the solid/liquid interface morphology allowed us to characterize the kinetic undercooling of the solidification front, to understand the evolution of the grains boundary grooves and to analyze the mechanisms of grain competition and also to reveal the impurities impact on the grain structure formed at the end of the solidification. We also observed twinning phenomenon in our experiments and we demonstrated that twins in multi-crystalline silicon can be growth twins. Two kinds of silicon twins have been identified and the grain competition phenomenon with twins studied.

La plupart des modules photovolta¨ıques produits sont `a base de silicium.L’efficacit´e de ces modules d´epend fortement de la qualit´e cristalline du siliciumutilis´ee ainsi que de la quantit´e d’impuret´es pr´esente dans le lingotd’origine d’o`u sont issus les modules. Les lingots de silicium sont obtenus aucours d’un proc´ed´e de solidification, durant lequel les impuret´es sont extraitespar ph´enom`ene de s´egr´egation. Le processus de s´egr´egation est influenc´e parl’´ecoulement dans le liquide durant l’´etape de solidification. L’utilisation d’unchamp magn´etique externe permet le contrˆole de l’´ecoulement dans le bainliquide. Dans cette ´etude, l’effet d’un ´ecoulement forc´e sur le processus des´egr´egation est ´etudi´e. Pour cela un dispositif exp´erimental (VB2) et unmod`ele num´erique ont ´et´e d´evelopp´es dans le but de comprendre le rˆole del’´ecoulement sur la forme de l’interface et sur la s´egr´egation des impuret´es. / The photovoltaic modules are generally produced using silicon wafers. Theirelectrical efficiency is related to the crystal quality, which is influenced bythe presence of pollutants in the ingots from which the wafers are cut. Siliconingots are obtained as a result of solidification processes, which implygrowing a crystal from melt. During this solidification process, impurities areseparated from the silicon. The segregation process is greatly influenced bythe melt velocity during the solidification process. The control of the meltflow during the crystallization process can be achieved using external magneticfields. This thesis presents the results of the study on the influence ofthe forced convection induced by a travelling magnetic field (TMF) duringthe solidification process, using both an experimental set-up (VB2) and anumerical model.