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Optical and Terahertz Energy Concentration on the Nanoscale in PlasmonicsRusina, Anastasia 01 December 2009 (has links)
We introduce an approach to implement full coherent control on nanometer length scales. It is based on spatiotemporal modulation of the surface plasmon polariton (SPP) fields at the thick edge of a nanowedge. The SPP wavepackets propagating toward the sharp edge of this nanowedge are compressed and adiabatically concentrated at a nanofocus, forming an ultrashort pulse of local fields. The profile of the focused waveform as a function of time and one spatial dimension is completely coherently controlled. We establish the principal limits for the nanoconcentration of the terahertz (THz) radiation in metal/dielectric waveguides and determine their optimum shapes required for this nanoconcentration. We predict that the adiabatic compression of THz radiation from the initial spot size of vacuum wavelength R λ 300 μm 0 0 ≈ ≈ to the unprecedented final size of R = 100 − 250 nm can be achieved, while the THz radiation intensity is increased by a factor of 10 to 250. This THz energy nanoconcentration will not only improve the spatial resolution and increase the signal/noise ratio for THz imaging and spectroscopy, but in combination with the recently developed sources of powerful THz pulses, will allow the observation of nonlinear THz effects and a variety of nonlinear spectroscopies (such as two-dimensional spectroscopy), which are highly informative. This should find a wide spectrum of applications in science, engineering, biomedical research and environmental monitoring. We also develop a theory of the spoof plasmons propagating at the interface between a dielectric and a real conductor. The deviation from a perfect conductor is introduced through a finite skin depth. The possibilities of guiding and focusing of spoof plasmons are considered. Geometrical parameters of the structure are found which provide a good guiding of such modes. Moreover, the limit on the concentration by means of planar spoof plasmons in case of non-ideal metal is established. These properties of spoof plasmons are of great interest for THz technology.
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Optical and Terahertz Energy Concentration on the Nanoscale in PlasmonicsRusina, Anastasia 20 October 2009 (has links)
We introduce an approach to implement full coherent control on nanometer length scales. It is based on spatiotemporal modulation of the surface plasmon polariton (SPP) fields at the thick edge of a nanowedge. The SPP wavepackets propagating toward the sharp edge of this nanowedge are compressed and adiabatically concentrated at a nanofocus, forming an ultrashort pulse of local fields. The profile of the focused waveform as a function of time and one spatial dimension is completely coherently controlled. We establish the principal limits for the nanoconcentration of the terahertz (THz) radiation in metal/dielectric waveguides and determine their optimum shapes required for this nanoconcentration. We predict that the adiabatic compression of THz radiation from the initial spot size of vacuum wavelength ~300 μm to the unprecedented final size of 100-250 nm can be achieved, while the THz radiation intensity is increased by a factor of 10 to 250. This THz energy nanoconcentration will not only improve the spatial resolution and increase the signal/noise ratio for THz imaging and spectroscopy, but in combination with the recently developed sources of powerful THz pulses, will allow the observation of nonlinear THz effects and a variety of nonlinear spectroscopies (such as two-dimensional spectroscopy), which are highly informative. This should find a wide spectrum of applications in science, engineering, biomedical research and environmental monitoring. We also develop a theory of the spoof plasmons propagating at the interface between a dielectric and a real conductor. The deviation from a perfect conductor is introduced through a finite skin depth. The possibilities of guiding and focusing of spoof plasmons are considered. Geometrical parameters of the structure are found which provide a good guiding of such modes. Moreover, the limit on the concentration by means of planar spoof plasmons in case of non-ideal metal is established. These properties of spoof plasmons are of great interest for THz technology.
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Strain-related phenomena in (In,Ga)N/GaN nanowires and rods investigated by nanofocus x-ray diffraction and the finite element methodHenkel, Thilo Johannes 15 January 2018 (has links)
In dieser Arbeit wird das lokal
aufgelöste Deformationsfeld einzelner (In,Ga)N/GaN Drähte mit Hilfe nanofokussierter
Röntgenbeugung und der Methode der Finiten Elemente untersucht. Hiermit
soll ein Beitrag zum grundlegenden Verständis der optischen Eigenschaften
geleistet werden, die durch das Deformationsfeld maßgeblich beeinflusst werden.
Zunächst wird die Abhängigkeit der vertikalen Normalkomponente, epsilon_zz, des
elastischen Dehnungstensors von der Geometrie eines axialen (In,Ga)N/GaN
Nanodrahtes diskutiert. Dabei wird ein signifikant negativer epsilon_zz-Wert beobachtet,
sobald das Verhältnis von Nanodrahtradius und (In,Ga)N-Segmentlänge gegen
eins strebt. Auffallend große Scherkomponenten und eine konvexe
Verformung der äußeren Oberfläche begleiten das Auftreten des negativen epsilon_zz-
Wertes und sind die Ursache dieses Effekts. Durch eine Ummantelung von GaN-Nanodrähten mit einer (In,Ga)N-Schale
lässt sich die aktive Fläche und somit die potentielle Lichtausbeute pro Fläche
im Vergleich zu planaren Strukturen deutlich erhöhen. Es wurde jedoch festgestellt,
dass das entlang der Drahthöhe emittierte Licht rotverschoben ist. Um
den Ursprung dieses Phänomens zu beleuchten, wird das lokale Deformationsfeld
mit Hilfe nanofokussierter Röntgenbeugung vermessen. Durch die gute
räumliche Auflösung ist es möglich, das Deformationsfeld innerhalb einzelner
Seitenfacetten zu untersuchen, wobei ein deutlicher Gradient festgestellt wird.
Basierend auf dem mit der Methode der Finiten Elemente simulierten Deformationsfeld
und kinematischen Streusimulationen, ist es möglich, den Deformationszustand
in einen In-Gehalt zu übersetzen. Wenn neben dem Deformationsfeld
auch der strukturelle Aufbau in der Simulation berücksichtigt wird, kann der
In-Gehalt mit noch größerer Genauigkeit bestimmt werden. / In this thesis, nanofocus x-ray
diffraction and the finite element method are applied to analyze the local strain
field in (In,Ga)N/GaN nanowires and micro-rods which are discussed as candidates
for a plethora of future optoelectronic applications. However, to improve
and tailor their properties, a fundamental understanding on the level of individual
objects is essential.
In this spirit, the dependence of the vertical normal component, epsilon_zz, of the
elastic strain tensor on the geometry of an axial (In,Ga)N/GaN nanowire is systematically
analyzed using the finite element method. Hereby, it is found that
if the ratio of nanowire radius and (In,Ga)N segment length approaches unity,
a significantly negative epsilon_zz value is observed. This stands in stark contrast to
naive expectations and shows that the common knowledge about planar systems
where epsilon_zz would always be greater or equal zero cannot easily be translated to
nanowires with an equivalent material sequence. As the origin of this effect significant
shear strains are discussed which go along with a convex deformation of
the outer surface resulting in a highly complex strain distribution.
The increased active area of core-shell (In,Ga)N/GaN micro-rods makes them
promising candidates for next-generation light emitting diodes. However, it is
found that the emission wavelength is significantly red-shifted along the rod
height. To shed light on the origin of this phenomenon, nanofocus x-ray diffraction
is applied to analyze the local strain field. Due to the high spatial resolution
it is possible to investigate the strain field within individual side-facets and to
detect a significant gradient along the rod height. Based on the deformation field
simulated using the finite element method and subsequent kinematic scattering
simulations it is possible to translate the strain state into an In content.
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