Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 126-147). Available also in a digital version from Dissertation Abstracts.

Thesis (Ph. D.)--University of Washington, 2001. / Vita. Includes bibliographical references (leaves 168-180).

Group III-nitride semiconductors are well suited for the fabrication of devices including visible-ultraviolet light emitting diodes, high-temperature and high-frequency devices. The wurtzite III-nitride based heterostructures grown along polar c-direction have large internal electric fields due to discontinuities in spontaneous and piezoelectric polarizations. For optoelectronic devices, such as light-emitting diodes and laser diodes, the internal electric field is deleterious as it causes a spatial separation of electron and hole wave functions in the quantum wells, which decreases emission efficiency. Growth of GaN-based heterostructures in alternative orientations, which have reduced (semipolar) or no polarization (nonpolar) in the growth direction, has been a major area of research in the last few years. The correlation between structural, optical and transport properties of semipolar and nonpolar III-nitride would be extremely useful. The thesis focuses on the growth and characterizations of semipolar and nonpolar III-nitride heterostructures by plasma-assisted molecular beam epitaxy. Chapter 1 provides a brief introduction to the III-nitride semiconductors. The importance of semipolar and nonpolar III-nitride heterostructures over conventional polar heterostructures has been discussed. Chapter 2 deals with the descriptions of molecular beam epitaxy system and working principles of different characterization tools used in the present work. Chapter 3 addresses the molecular beam epitaxial growth of nonpolar (1 1 -2 0) and semipolar (1 1 -2 2) GaN on sapphire substrates. An in-plane orientation relationship is found to be [0 0 0 1] GaN || [-1 1 0 1] sapphire and [-1 1 0 0] GaN || [1 1 -2 0] sapphire for nonpolar GaN on r-sapphire substrates. Effect of growth temperature on structural, morphological and optical properties of nonpolar GaN has been studied. The growth temperature plays a major role in controlling crystal quality, morphology and emission properties of nonpolar a-plane GaN. The a-plane GaN shows crystalline anisotropy nature and it has reduced with increase in the growth temperature. The surface roughness was found to decrease with increase in growth temperature and film grown at 760°C shows reasonably smooth surface with roughness 3.05 nm. Room temperature photoluminescence spectra show near band emission peak at 3.434 -3.442 eV. The film grown at 800 ºC shows broad yellow luminescence peak at 2.2 eV. Low temperature photoluminescence spectra show near band emission at 3.483 eV along with defect related emissions. Raman spectra exhibit blue shift due to compressive strain in the film. An in-plane orientation relationship is found to be [1 -1 00] GaN || [1 2-1 0] sapphire and [-1 -1 2 3] GaN || [0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The surface morphology of semipolar GaN film is found to be reasonably smooth with pits on the surface. Room temperature photoluminescence shows the near band emission (NBE) at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E2 (high) peak position observed at 569.1 cm1. Chapter 4 deals with the fabrication and characterizations of Au/nonpolar and Au/semipolar GaN schottky diodes. The temperature-dependent current–voltage measurements have been used to determine the current mechanisms in Schottky diodes fabricated on nonpolar a-plane GaN and semipolar GaN epilayers. The barrier height (φb) and ideally factor (η) estimated from the thermionic emission model are found to be temperature dependent in nature indicate the deviations from the thermionic emission (TE) transport mechanism. Low temperature I-V characteristics of Au/ GaN Schottky diode show temperature independent tunnelling parameter. Barrier heights calculated from XPS are found to be 0.96 eV and 1.13 eV for Au/nonpolar GaN and Au/semipolar GaN respectively. Chapter 5 demonstrates the growth of InN on r-sapphire substrates with and without GaN buffer layer. InN film and nanostructures are grown on r-sapphire without GaN buffer layer and they are highly oriented along (0002) direction. The electron microscopy study confirms the nanostructures are vertically aligned and highly oriented along the (0001) direction. The Raman studies of InN nanostructures show the SO modes along with the other possible Raman modes. The band gap of InN nanostructures is found to be 0.82 eV. InN grown with a-plane GaN buffer shows nonpolar orientated growth. Growth temperature dependent studies of nonpolar a-plane InN epilayers are carried out. The valence band offset value is calculated to be 1.31 eV for nonpolar a-plane InN/GaN heterojunctions. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 1.41 eV. Chapter 6 deals with the temperature dependent I-V characteristics of the nonpolar a-plane (1 1 -2 0) InN/GaN heterostructures. The measured values of barrier height and ideality factor from the TE model show the temperature dependent variation. The double Gaussian distribution has mean barrier height values ( ϕb ) of 1.17 and 0.69 eV with standard deviation (σs ) of 0.17 and 0.098 V, respectively. The modified Richardson plot ln (Is/T2)-q2σ2/2k2T2 ) versus q/kT in the temperature range of 350 – 500 K, yielded the Richardson constant of 19.5 A/cm2 K2 which is very close to the theoretical value of 24 A/cm2 K2 for n-type GaN. The tunneling parameters E0 found to be temperature independent at low temperature range (150 –300 K). Chapter 7 concludes with the summary of present investigations and the scope for future work.

No description available.

Thesis (Ph.D.)--University of Western Australia, 2006.

Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999. / "1998"--T.p. Includes bibliographical references.

Thesis (M. S.)--Materials Science and Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Cochran, Joe; Committee Member: Berczik, Doug; Committee Member: Sanders, Tom; Committee Member: Sandhage, Ken; Committee Member: Thadhani, Naresh.

Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 77-78). Also available in electronic format on the Internet.

Thesis (Ph. D.)--State University of New York at Binghamton, Materials Science and Engineering Program, 2009. / Includes bibliographical references.

Lors de ce travail nous avons étudié la synthèse de nitrure de silicium en utilisant des décharges magnétron Ar/NH3 et Ar/H2/N2. Nous nous sommes intéressés particulièrement à la caractérisation de la décharge. Le paramètre de diagnostic le plus utilisé pour caractériser une décharge magnétron est la mesure de la tension de décharge, mais ces mesures ne donnent qu’une vue partielle du processus de pulvérisation même si le régime de pulvérisation peut être défini :métallique ou réactif. En effet, aucune information chimique ne peut être extraite des courbes de tension: d’autres techniques d’analyse sont donc indispensables. Nous avons utilisé la spectroscopie des photoélectrons X (XPS) pour analyser la chimie de la surface de la cible et la spectroscopie d’émission optique (OES) pour analyser la phase gazeuse.<p>La combinaison des mesures de tension et XPS a permis de mettre en évidence l’empoisonnement de la surface de la cible, consécutif à la formation d’une couche de nitrure de silicium lors de la pulvérisation dans un mélange Ar/NH3. Dans le cas du mélange Ar/H2/N2, les mesures de tension ne permettent pas avec certitude de confirmer un empoisonnement de la cible, néanmoins les mesures XPS mettent en évidence, comme pour le mélange Ar/NH3, la présence d’une couche de nitrure de silicium. Les mesures OES ont permis de détecter les mêmes espèces dans les deux types de mélange gazeux, seule l’espèce NH n’a pas été détectée dans le mélange Ar/H2/N2. Parmi les espèces détectées, certaines sont directement pulvérisées de la cible; il a été possible de relier l’intensité de celles-ci avec l’état de surface de la cible dans le cas du plasma Ar/NH3.<p>Nous avons également étudié l’instabilité du processus de pulvérisation en combinant des mesures de tension, OES et XPS. Avec une vitesse de pompage de 230 l/s, nous avons observé une très faible hystérèse de la tension pour les deux types de mélange gazeux. Dans le cas du plasma Ar/NH3, nous avons pu mettre en évidence que la bande de l’espèce NH peut être utilisée comme paramètre de contrôle de la décharge. Finalement, nous avons caractérisé les films obtenus par XPS et spectroscopie infrarouge. La stoechiométrie des films déposés va dépendre de la quantité d’ammoniac ou d’azote injecté dans la décharge, les films déposés avec NH3 sont contaminés par quelques pourcents d’oxygène alors que ceux déposés avec le mélange Ar/H2/N2 en sont dépourvus. / Doctorat en Sciences / info:eu-repo/semantics/nonPublished