An alternative approach to energy integrating systems is photon counting which provides higher dose efficiency through efficient noise rejection and optimal energy weighting, and, moreover, is not susceptible to memory artifacts such as image lag and ghosting. The first large-area photon counting imager was Charpak's Nobel Prize winning invention of the gas-filled multiwire proportional chamber (MWPC), which revolutionized the field of radiation detection in 1968. In most applications, however, the use of a solid detection medium is preferable because solid densities are about three orders-of-magnitude greater than gas, and thus, they can yield much smaller detector dimensions with unsurpassed spatial and temporal resolution. Thus far, crystalline Cadmium Zinc Telluride is the only room-temperature solid-state detector that meets the requirements for photon counting imaging. However, the material is grown in small ingots and production costs are high for large-area imaging applications. The problem is that disordered (or non-crystalline) solids, which are easier and less expensive to develop over large-area than single crystalline solids, have been ruled out as viable photon counting detectors because of their poor temporal resolution, or more specifically, extremely low carrier mobilities and transit-time-limited photoresponse. To circumvent the problem of poor charge transport in disordered solids with a conventional planar detector structure, we propose unipolar charge sensing by establishing a strong near-field effect using an electrostatic shield within the material. We introduce the concept of time-differential photoresponse in unipolar solids and show that their temporal resolution can be improved substantially to reach the intrinsic physical limit set by spatial dispersion. Inspired by Charpak's MWPC and its variants, and for the first time, we have implemented an electrostatic shield inside evaporated amorphous selenium (a-Se) using the proposed lithography-based microstrip solid-state detector (MSSD). The fabricated devices are characterized with optical, x-ray, and gamma-ray impulse-like excitations. Using optical time-of-flight (TOF) measurements, we show for the first time a unipolar Gaussian TOF transient from the new MSSD structure, instead of a rectangular response with a Gaussian-integral at the tail which is a typical response of a conventional planar device. The measured optical and x-ray TOF results verify the time-differential property of the electrostatic shield and the practicality of the dispersion-limited photoresponse. Furthermore, we use single gamma-ray photon excitations to probe detector's temporal resolution in pulse mode for photon counting. For the MSSD, we show a depth-independent signal for photon absorption across the bulk and a reduction in signal risetime by a factor of 350, comparing performance limiting factors being hole-dispersion for the MSSD and electron-transit-time for the conventional planar device. The time-differential response obtained from the proposed unipolar detector structure enables disordered photoconductive films to become viable candidates for large-area photon counting applications.

An alternative approach to energy integrating systems is photon counting which provides higher dose efficiency through efficient noise rejection and optimal energy weighting, and, moreover, is not susceptible to memory artifacts such as image lag and ghosting. The first large-area photon counting imager was Charpak's Nobel Prize winning invention of the gas-filled multiwire proportional chamber (MWPC), which revolutionized the field of radiation detection in 1968. In most applications, however, the use of a solid detection medium is preferable because solid densities are about three orders-of-magnitude greater than gas, and thus, they can yield much smaller detector dimensions with unsurpassed spatial and temporal resolution. Thus far, crystalline Cadmium Zinc Telluride is the only room-temperature solid-state detector that meets the requirements for photon counting imaging. However, the material is grown in small ingots and production costs are high for large-area imaging applications. The problem is that disordered (or non-crystalline) solids, which are easier and less expensive to develop over large-area than single crystalline solids, have been ruled out as viable photon counting detectors because of their poor temporal resolution, or more specifically, extremely low carrier mobilities and transit-time-limited photoresponse. To circumvent the problem of poor charge transport in disordered solids with a conventional planar detector structure, we propose unipolar charge sensing by establishing a strong near-field effect using an electrostatic shield within the material. We introduce the concept of time-differential photoresponse in unipolar solids and show that their temporal resolution can be improved substantially to reach the intrinsic physical limit set by spatial dispersion. Inspired by Charpak's MWPC and its variants, and for the first time, we have implemented an electrostatic shield inside evaporated amorphous selenium (a-Se) using the proposed lithography-based microstrip solid-state detector (MSSD). The fabricated devices are characterized with optical, x-ray, and gamma-ray impulse-like excitations. Using optical time-of-flight (TOF) measurements, we show for the first time a unipolar Gaussian TOF transient from the new MSSD structure, instead of a rectangular response with a Gaussian-integral at the tail which is a typical response of a conventional planar device. The measured optical and x-ray TOF results verify the time-differential property of the electrostatic shield and the practicality of the dispersion-limited photoresponse. Furthermore, we use single gamma-ray photon excitations to probe detector's temporal resolution in pulse mode for photon counting. For the MSSD, we show a depth-independent signal for photon absorption across the bulk and a reduction in signal risetime by a factor of 350, comparing performance limiting factors being hole-dispersion for the MSSD and electron-transit-time for the conventional planar device. The time-differential response obtained from the proposed unipolar detector structure enables disordered photoconductive films to become viable candidates for large-area photon counting applications.

Grace à leurs propriétés d’auto-réparation et d’auto-organisation, les matériaux pi-conjugués liquide-cristallins (LCs) présentent un grand intérêt pour l’élaboration de matériaux semi-conducteurs à hautes performances. Ils peuvent être utilisés pour différents types d’applications en électronique organique telles que les cellules solaires (OPV), les diodes électroluminescentes (OLED) et les transistors à effet de champs (OFET). Dans ce travail, nous avons conçu et préparé une nouvelle famille de LCs combinant des entités pi-conjuguées de type calamitique et discotique au sein d’une architecture moléculaire unique. Plus particulièrement, nous avons imaginé trois différentes architectures telles que des dyades et triades linéaires et des triades ramifiées, incluant des dérivés discotiques de pérylène ou de triphénylène et des dérivés calamitiques de terthiophène, de benzothienobenzothiophène ou encore de pyromellitique. L’objectif était d’étudier leurs comportements liquide-cristallins et leurs propriétés d’auto-organisation et de transport de charges.Les résultats obtenus ont montré que ces matériaux donnent des auto-assemblages complexes formant des arrangements multi-lamellaires de bicouches, dans lesquelles les entités calamitiques et discotiques présentent une organisation dans le plan. De plus, en choisissant judicieusement les entités pi-conjuguées calamitiques et discotiques (type-p ou type-n), nous avons démontré que ce type de matériaux auto-organisés peut présenter des propriétés de transport de charge ambipolaire en formant des chemins distincts pour chaque type de charge (trou et électron) par nano-ségrégation de ces entités de type p et de type n. / Due to their self-healing ability and their self-organization property, pi-conjugated liquid crystals (LCs) are materials of great interest to prepare high performance semiconducting materials. They can be used in different types of organic electronic applications such as solar cells (OPV), Organic Light-Emitting Diodes (OLED) and Organic Field-Effect Transistors (OFET). In this work, we were interested in designing and preparing a novel family of LCs combining π-conjugated discotic and calamitic moieties in a unique molecular architecture. More particularly, we designed three different molecular architectures based on a linear dyad, triad and a branched triad, which include discotic triphenylene or perylene and calamitic terthiophene, benzothienobenzothiophene or pyromellitic moieties. The objective was to study their liquid crystalline behaviors and their self-organization and charge transport properties.Based on our results, we demonstrated that these materials can form complex self-assemblies in the bulk such as multi-lamellar arrangements presenting bilayered lamellar phases with in-layer organization of both calamitic and discotic species. In addition, based on the appropriate choice of the disk- and rod-like π-conjugated cores (p-type or n-type), we showed that this kind of self-organized materials could exhibit ambipolar charge transport properties, presenting a spontaneous nanosegregation of p-type and n-type entities in bulk, and leading to well-defined distinct conductive channels for each type of charge carriers (hole and electron).

Thin Film Transistors (TFTs) are widely used in large area electronics because they offer the advantage of low cost fabrication and wide substrate choice. TFTs have been conventionally used for switching applications in large area display arrays. But when it comes to designing a sensor actuator system on a flexible substrate comprising entirely of organic and inorganic TFTs, there are two main challenges – i) Fabrication of complementary TFT devices is difficult ii) TFTs have a drift in their threshold voltage (VT) on application of gate bias. Also currently there are no circuit simulators in the market which account for the effect of VT drift with time in TFT circuits. The first part of this thesis focuses on integrating the VT shift model in the commercially available AIM-Spice circuit simulator. This provides a new and powerful tool that would predict the effect of VT shift on nodal voltages and currents in circuits and also on parameters like small signal gain, bandwidth, hysteresis etc. Since the existing amorphous silicon TFT models (level 11 and level 15) of AIM-Spice are copyright protected, the open source BSIM4V4 model for the purpose of demonstration is used. The simulator is discussed in detail and an algorithm for integration is provided which is then supported by the data from the simulation plots and experimental results for popular TFT configurations. The second part of the thesis illustrates the idea of using negative feedback achieved via contact resistance modulation to minimize the effect of VT shift in the drain current of the TFT. Analytical expressions are derived for the exact value of resistance needed to compensate for the VT shift entirely. Circuit to realize this resistance using TFTs is also provided. All these are experimentally verified using fabricated organic P-type Copper Phthalocyanine (CuPc) and inorganic N-type Tin doped Zinc Oxide (ZTO) TFTs. The third part of the thesis focuses on building a robust amplifier using these TFTs which has time invariant DC voltage level and small signal gain at the output. A differential amplifier using ZTO TFTs has been built and is shown to fit all these criteria. Ideas on vertical routing in an actual sensor actuator interface using this amplifier have also been discussed such that the whole system may be “tearable” in any contour. Such a sensor actuator interface can have varied applications including wrap around thermometers and X-ray machines.