In first part, the supercritical CO2 (SCCO2) fluid technology is employed to improve the device properties of ZnO TFT. The SCCO2 fluid exhibits liquid-like property, which has excellent transport ability. Furthermore, the SCCO2 fluid has gas-like and high-pressure properties to diffuse into the nanoscale structures without damage. Hence, the SCCO2 fluid can carry the H2O molecule effectively into the ZnO films at low temperature and passivate traps by H2O molecule at low temperature. The experimental results show that the on current, sub-threshold slope, and threshold voltage of the device were improved significantly. Next, the electrical degradation behaviors and mechanisms under drain bias stress of a-IGZO TFTs were investigated. A current crowding effect and an obvious capacitance-voltage stretch-out were observed after stress. During the drain-bias stress, the oxygen would be absorbed on the back channel near the drain region of IGZO film. Therefore, the carrier transport is impeded by the additional energy barrier near drain region induced by the adsorbed oxygen, which forms a depletion layer to generate the parasitism resistance. We also investigated the RRAM device based on IGZO film, and proposed the related physical mechanism models. The IGZO RRAM will be very promising for integration with IGZO TFTs for advanced system-on-panel display applications to be a transparent embedded system. In this part, the transparent RRAM device with ITO/IGZO/ITO structure was fabricated. The proposed device presents an excellent bipolar resistive switching characteristic and good reliability. The bipolar switching mechanism of our device is dominated by the formation and rupture of the oxygen vacancies in a conduction path. The influence of electrode material on resistance switching characteristic is investigated through Pt/IGZO/TiN and Ti/IGZO/TiN structure. As the bias applied on the Ti or TiN, the Ti or TiN electrode can play the role of oxygen reservoir to absorb/discharge oxygen ions. Therefore, the device presents a bipolar resistive switching characteristic. However, as the bias applied on the Pt electrode, the device presents a unipolar resistive switching characteristic. Because the Pt electrode can¡¦t store the oxygen ion, the device should use the joule heating mode to rupture the conduction path and present the unipolar resistive switching characteristic. Finally, the resistive switching properties of IGZO film deposited at different oxygen content were investigated, since the resistance switching behaviors are related to the formation and rupture of filaments composed of oxygen vacancies in the IGZO matrix. Experiment results show that the HRS current decreases when the oxygen partial pressure gradually increases. Based on the XPS analysis, these phenomena are related to the non-lattice oxygen concentration. With increasing oxygen ratio, the filaments will rupture completely through the abundant non-lattice oxygen inducing oxidation, which leads to HRS current decrease and an increase in the memory window.

The work carried out in this thesis systematically investigates the correlation between microstructures and electronic properties of organic semiconductors. The major directions that were pursued in this thesis are: (i) studies on structure-property relationship by rational design and synthesis of monodisperse oligomers with varying chain-lengths (ii) role of electronic properties and aggregation (microstructures) in governing singlet fission (SF). In the first part of the thesis, the optical, structural and charge transport properties of Diketopyrrolopyrrole (DPP)-based oligomers, as a function of the chain length, has been discussed. The energy bands became wider with an increase in chain length and a gain in backbone electron affinity was observed, with an offset in microstructural order. With an increase in chain length, the tendency to form intramolecular aggregates increased as compared to intermolecular aggregates due to the onset of backbone conformational defects and chain folding. An insight into the solid-state packing and microstructural order has been obtained by steady-state and transient spectroscopy, grazing incidence small angle x-ray scattering (GISAXS), atomic force microscopy (AFM) and transmission electron microscopy (TEM) studies. The charge-carrier mobilities varied in accordance with the degree of microstructural order as: dimer > trimer > pentamer. A library of DPP-DPP based trimers was also generated by modifying the donor chromophore (phenyl, thiophene and selenophene) in the oligomer backbone. Highest n-channel mobility of ~0.2 cm2V-1s-1 was obtained which validated that: (a) the effect of solid-state packing predominates the effect of backbone electronic structure on charge carrier mobility. Although oligomers possess lesser backbone defects than polymers in general, their charge carrier mobilities were not comparable to that of 2DPP-OD-TEG polymer, which forms highly oriented and isotropic edge-on crystallites/microstructures in the thin film, shows high n-channel mobility of 3 cm2V-1s-1 and band-like transport ;(b) although delocalized electronic states are achieved at greater chain lengths, the degree of solid-state microstructural order drastically reduces which leads to lower charge carrier mobilities; (c) conformational collapse resulted in lower electron mobilities and an increase in ambipolarity. The later part of the thesis debates on the relative contribution of electronic structure and aggregation (microstructures) in governing singlet fission (SF). Motivated by the recent SF model in carotenoid aggregates, a DPP-DPP based oligomer was synthesized by incorporating a vinylene bridge to imbue “polyene” character in the chromophore. Transient Spectroscopy (TA) measurements were carried out to monitor the formation of triplet states in the oligomer and to probe the occurrence of singlet fission. Although the oligomer exhibits “polyene” character like a typical “carotenoid aggregate”, it did not show singlet fission because of the additional stabilization of the singlet (S1) state which reduces the ∆EST. This study rationalized the importance of judicious control of band structures as well as microstructures to observe the SF phenomenon in this category of chromophores. The novel synthetic protocol provides the scope to tailor DPP-DPP based materials with desired effective conjugation lengths and side chains and can foreshow great prospects for future generation of organic electronics.

Thin Film Transistors (TFTs) are widely used in large area electronics because they offer the advantage of low cost fabrication and wide substrate choice. TFTs have been conventionally used for switching applications in large area display arrays. But when it comes to designing a sensor actuator system on a flexible substrate comprising entirely of organic and inorganic TFTs, there are two main challenges – i) Fabrication of complementary TFT devices is difficult ii) TFTs have a drift in their threshold voltage (VT) on application of gate bias. Also currently there are no circuit simulators in the market which account for the effect of VT drift with time in TFT circuits. The first part of this thesis focuses on integrating the VT shift model in the commercially available AIM-Spice circuit simulator. This provides a new and powerful tool that would predict the effect of VT shift on nodal voltages and currents in circuits and also on parameters like small signal gain, bandwidth, hysteresis etc. Since the existing amorphous silicon TFT models (level 11 and level 15) of AIM-Spice are copyright protected, the open source BSIM4V4 model for the purpose of demonstration is used. The simulator is discussed in detail and an algorithm for integration is provided which is then supported by the data from the simulation plots and experimental results for popular TFT configurations. The second part of the thesis illustrates the idea of using negative feedback achieved via contact resistance modulation to minimize the effect of VT shift in the drain current of the TFT. Analytical expressions are derived for the exact value of resistance needed to compensate for the VT shift entirely. Circuit to realize this resistance using TFTs is also provided. All these are experimentally verified using fabricated organic P-type Copper Phthalocyanine (CuPc) and inorganic N-type Tin doped Zinc Oxide (ZTO) TFTs. The third part of the thesis focuses on building a robust amplifier using these TFTs which has time invariant DC voltage level and small signal gain at the output. A differential amplifier using ZTO TFTs has been built and is shown to fit all these criteria. Ideas on vertical routing in an actual sensor actuator interface using this amplifier have also been discussed such that the whole system may be “tearable” in any contour. Such a sensor actuator interface can have varied applications including wrap around thermometers and X-ray machines.