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Optical emission spectroscopy of laser induced plasmas containing carbon and transitional metals.Motaung, David Edmond. January 2008 (has links)
<p>The spectroscopic, SEM and Raman measurements on carbon nanotubes under the exact conditions of which OES analysis were made showed that at<br />
a pressure of 400 Torr and a flow rate of 200 sccm, the quality and quantity of single-walled carbon nanotubes was the highest.</p>
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Entwicklung, Charakterisierung und Anwendungen nichtthermischer Luft-Plasmajets / Development, characterization and applications of non-thermal air plasma jetsMeiners, Annette 21 October 2011 (has links)
No description available.
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Optical emission spectroscopy of laser induced plasmas containing carbon and transitional metals.Motaung, David Edmond. January 2008 (has links)
<p>The spectroscopic, SEM and Raman measurements on carbon nanotubes under the exact conditions of which OES analysis were made showed that at<br />
a pressure of 400 Torr and a flow rate of 200 sccm, the quality and quantity of single-walled carbon nanotubes was the highest.</p>
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An?lise por meio de espectroscopia de emiss?o ?ptica das esp?cies ativas em nitreta??o i?nica e gaiola cat?dicaBarbosa, J?lio C?sar Pereira 14 November 2007 (has links)
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Previous issue date: 2007-11-14 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / Plasma process like ionic nitriding and cathodic cage plasma nitriding are utilized in order to become hard surface of steels. The ionic nitriding is already accepted in the industry while cathodic cage plasma nitriding process is in industrial implementation stage. Those process depend of plasma parameters like electronic and ionic temperature (Te, Ti), species density (ne, ni) and of distribution function of
these species. In the present work, the plasma used to those two processes has been observed through Optical Emission Spectroscopy OES technique in order to identify presents species in the treatment ambient and relatively quantify them. So plasma of typical mixtures like N2 H2 has been monitored through in order to study evolution of those species during the process. Moreover, it has been realized a
systematic study about leaks, also thought OES, that accomplish the evolution of contaminant species arising because there is flux of atmosphere to inside nitriding
chamber and in what conditions the species are sufficiently reduced. Finally, to describe the physic mechanism that acts on both coating techniques ionic nitriding and cathodic cage plasma nitriding / Processos a plasma como nitreta??o i?nica e nitrteta??o por gaiola cat?dica s?o utilizados para endurecimento de superf?cies de a?os. A nitreta??o i?nica sendo j? consolidada em aplica??es industriais enquanto que o processo por gaiola
cat?dica ainda se encontra em est?gio de pesquisa. Esses processos dependem dos par?metros de plasma como temperatura eletr?nica e de ?ons (Te, Ti), densidade
de esp?cies (ne, ni,) e da fun??o de distribui??o das mesmas. No presente trabalho, o plasma utilizado para esses dois processos foi diagnosticado utilizando a t?cnica de Espectroscopia de Emiss?o ?ptica EEO para identificar as esp?cies presentes no ambiente de tratamento e quantifica-las relativamente. Assim, plasma de mistura gasosa t?pica como N2 H2 foi monitorado, com o intuito de estudar a evolu??o dessas esp?cies durante o processo. Al?m disso, foi realizado um estudo sistem?tico, tamb?m atrav?s de EEO, que acompanha a evolu??o das esp?cies contaminantes surgidas em vazamentos de modo a buscar condi??es onde as
mesmas s?o suficientemente reduzidas. Finalmente busca-se, atrav?s do diagn?stico de plasma por EEO, descrever o mecanismo f?sico de atua??o das duas t?cnicas de tratamento: nitreta??o i?nica e gaiola cat?dica
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Diagn?stico das esp?cies ativas do plasma usado em tratamentos termoqu?micos do tit?nioBarbosa, Julio Cesar Pereira 29 April 2011 (has links)
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Previous issue date: 2011-04-29 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / Plasma diagnostics by Optical Emission Spectroscopy were performed for electrical discharge in three gas mixture respecting the combinations z N2 y Ar x H2, z N2 y Ar x O2 e z N2 y Ar x CH4, in which the indexes z and y systematically vary from 1 to 4 and x varies from 0 to 4, every one has dimension SCCM, resulting in 80 combinations. From the all obtained spectrums, the species CH (387,1 nm), N2+ (391,4 nm), Hβ (486,1 nm), Hα (656,3 nm), Ar (750,4 nm), O (777,4 nm) e O (842,6 nm) were analyzed because of their abundance and importance on the kinetic of reaction from the plasma to surface, besides their high dependences on the gases flows. Particularly interesting z, y and x combinations were chosen in order to study the influence of active species on the surface modification during the thermochemical treatment. From the mixtures N2 Ar O2 e N2 Ar CH4 were chosen three peculiar proportions which presented luminous intensity profile with unexpected maximum or minimum values, denominated as plasma anomaly. Those plasma concentrations were utilized as atmosphere of titanium treatment maintaining constant the control parameters pressure and temperature. It has been verified a relation among luminous intensity associated to N2+ and roughness, nanohardness and O atoms diffusion into the crystalline lattice of treated titanium and it has been seen which those properties becomes more intense precisely in the higher points found in the optical profile associated to the N2+ specie. Those parameters were verified for the mixture which involved O2 gas. For the mixture which involves CH4 gas, the relation was determinate by roughness, number of nitrogen and carbon atoms diffused into the titanium structure which presented direct proportionality with the luminous intensity referent to the N2+ and CH. It has been yet studied the formation of TiCN phases on the surface which presented to be essentially directly proportional to the increasing of the CH specie and inversely proportional to the increasing of the specie N2+ / Diagn?sticos de plasma por Espectroscopia de Emiss?o ?ptica foram realizados para descarga el?trica em tr?s misturas gasosas, dentro das seguintes combina??es: z N2 y Ar x H2, z N2 y Ar x O2 e z N2 y Ar x CH4, com os ?ndices z e y variando sistematicamente de 1 a 4 e x de 0 a 4, todos com dimens?o de SCCM, resultando em 80 combina??es. Dos espectros obtidos, foram analisadas as esp?cies CH (387,1 nm), N2+ (391,4 nm), Hβ (486,1 nm), Hα (656,3 nm), Ar (750,4 nm), O (777,4 nm) e O (842,6 nm) por serem mais abundantes e importantes na cin?tica de rea??o do plasma ? superf?cie, al?m de suas altas depend?ncias dos fluxos de g?s. Foram escolhidas combina??es z, y e x, particularmente interessantes para estudar a influ?ncia das esp?cies ativas na modifica??o da superf?cie durante o tratamento termoqu?mico. Das misturas N2 Ar O2 e N2 Ar CH4 foram escolhidas tr?s propor??es peculiares que apresentavam perfis de intensidade luminescente com m?ximos ou m?nimos inesperados classificados aqui como anomalias de plasma. Essas concentra??es de plasma foram utilizadas como atmosfera de tratamento de amostras de tit?nio, mantendo-se constante os par?metros press?o e temperatura. Verificou-se rela??o entre intensidade luminosa associada ? esp?cie N2+ e a rugosidade, nanodureza e a difus?o do oxig?nio na rede cristalina do tit?nio tratado e viu-se que essas propriedades se intensificam precisamente nos pontos de m?ximo encontrados no perfil ?ptico dessa esp?cie. Esses par?metros foram verificados para mistura que envolvia o g?s O2. Para a mistura em que se fez presente o g?s CH4, a rela??o foi determinada por meio da rugosidade, n?mero de ?tomos de nitrog?nio e carbono difundidos no tit?nio, que apresentou proporcionalidade direta com a intensidade luminosa referente ?s esp?cies N2+ e CH. Ainda foi estudada a forma??o de fases TiCN na sua superf?cie, que essencialmente se mostra diretamente proporcional ao crescimento da esp?cie CH e inversamente proporcional ao crescimento da esp?cie N2+
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Dépôt de matériaux à changement de phase par PE-MOCVD à injection liquide pulsée pour des applications mémoires PCRAM / Deposition of phase change materials using pulsed-liquid injection PE-MOCVD for PCRAM based memory applicationsAoukar, Manuela 22 September 2015 (has links)
Les mémoires résistives PCRAM sont basées sur le passage rapide et réversible entre un état amorphe hautement résistif et un état cristallin faiblement résistif d’un matériau à changement de phase (PCM). Ces mémoires constituent un des candidats les plus prometteurs pour la nouvelle génération de mémoires non-volatiles grâce à un large éventail de propriétés uniques comme une vitesse de fonctionnement élevée, une capacité de stockage multi-niveaux sur plusieurs bits, une bonne endurance et une possibilité de miniaturisation poussée. Cependant, la nécessité d’utiliser des courants d’effacement (IRESET) importants pour l’étape d’amorphisation du PCM représente l’un des principaux freins à l’explosion de la technologie PCRAM sur le marché des mémoires non volatiles. Dans ce contexte, il a été démontré que le confinement du PCM dans des structures possédant des facteurs de forme élevés permet d’améliorer l’efficacité du chauffage nécessaire au changement de phase du PCM et donc de réduire les courants d’amorphisation. Afin d’incorporer des matériaux PCM dans de telles structures, il est alors nécessaire de développer un procédé de dépôt très conforme. C’est pourquoi un procédé de dépôt PE-MOCVD (Plasma Enhanced- Metal Organic Chemical Vapor deposition) à injection liquide pulsée a été développé dans ce travail. Dans un premier temps des films amorphes et homogènes du composé binaire GeTe ont été déposés à partir des précurseurs organométalliques TDMAGe et DIPTe. Les analyses XPS révèlent que les couches de GeTe déposées sont stoechiométriques mais présentent une forte contamination en carbone. Ainsi, un des objectifs de cette thèse a été de réduire le taux de carbone dans les couches afin d’optimiser leurs propriétés de changement de phase. Une étude de l’impact des paramètres de dépôt tel que la puissance, la pression, la nature et le débit des gaz utilisés est alors présentée. En étudiant et en optimisant les paramètres de dépôt, des couches de GeTe contenant seulement 2 % at. de carbone ont pu être obtenues. Dans un second temps, des films du composé ternaire GeSbTe ont été déposés en injectant simultanément les trois précurseurs TDMAGe, TDMASb et DIPTe dans le plasma de dépôt. Une large gamme de composition peut alors être obtenue en variant les paramètres d’injection et de dépôt. L’un des principaux avantages de ce procédé est la capacité de couvrir une large gamme de compositions permettant d’obtenir des films possédant des propriétés de changement de phase très variées. L’impact des paramètres plasma sur la conformité du dépôt a aussi été étudié. Il est montré que l’ajout d’une composante BF à la puissance RF du plasma permet d’améliorer le remplissage des structures possédant des facteurs de forme élevés. Enfin, l’intégration dans des dispositifs mémoires PCRAM tests de matériaux PCM obtenus par ce procédé PE-MOCVD a mis en évidence des propriétés électriques proches de celles obtenues avec des matériaux déposés par les procédés de dépôt conventionnels de type PVD. / Phase change random access memories PCRAM are based on the fast and reversible switch between the high resistive amorphous state and the low resistive crystalline state of a phase change material (PCM). These memories are considered to be one of the most promising candidates for the next generation of non volatile memories thanks to their unique set of features such as fast programming speed, multi-level storage capability, good endurance and high scalability. However, high power consumption during the RESET operation (IRESET) is the main challenge that PCRAM has to face in order to explode the non volatile memory market. In this context, it has been demonstrated that by integrating the phase change material (PCM) in high aspect ratio lithographic structures, the heating efficiency is improved leading to a reduced reset current. In order to fill such confined structures with the phase change material, a highly conformal deposition process is required. Therefore, a pulsed liquid injection Plasma Enhanced-Metal Organic Chemical Vapor Deposition process (PE-MOCVD) was developed in this work. First, amorphous and homogeneous GeTe films were deposited using the organometallic precursors TDMAGe and DIPTe as Ge and Te precursors. XPS measurements revealed a stoichiometric composition of GeTe but with high carbon contamination. Thus, one of the objectives of this work was to reduce the carbon contamination and to optimize the phase change properties of the deposited PCMs. The effect of deposition parameters such as plasma power, pressure and gas rate on the carbon contamination is then presented. By tuning and optimizing deposition parameters, GeTe films with carbon level as low at 2 at. % were obtained. Thereafter, homogeneous films of GeSbTe were deposited by injecting simultaneously the organometallic precursors TDMAGe, TDMASb and DiPTe in the plasma. A wide range of compositions was obtained by varying the injection and deposition operating parameters. Indeed, one of the main advantages of this process is the ability of varying films composition, which results in varying phase change characteristics of the deposited PCM. The impact of plasma parameters on the conformity of the process was also studied. It was shown that by adding a low frequency power component to the radio frequency power of the plasma, structures with high aspect ratio were successfully filled with the phase change material. Finally, electrical characterization of PCRAM test devices integrating phase change materials deposited by PE-MOCVD as active material have presented electrical properties similar to the ones obtained for materials deposited by conventional physical vapor deposition (PVD) process.
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Using biochemical and nutrient analysis to understand the role of methylglyoxal signalling in soybean exposed to zirconiumNdlovu, Linda Esihle January 2017 (has links)
Magister Scientiae - MSc (Biotechnology) / Soybean have been listed as a priority commodity crop in South Africa (SA) and
provide a good source of protein to the population. Therefore, soybean has been
earmarked as an important food security crop and strategies are currently being
discussed at governmental level to increase and sustain soybean production.
However, the SA landscape poses many challenges to the agricultural sector such
as prolong drought periods, flooding, nutrient poor soils, saline soils and heavy
metal contaminated soils. Heavy metal (HM) contamination is becoming a serious
concern and is aggravated by historical mining in SA. Indeed, SA has established
itself as the number one ranked mining country in the world and is frequently
mining metals such as chromium, vanadium, gold, zirconium, platinum, and
antimony. Prolong rainfall near mining areas leads to acid mine drainage which
lowers the soil pH to approximately two. These highly acidic soils will solubilize
the metals and cause the metals to leach into river systems as well as the water
table leading to increase heavy metal contamination in nearby soil sites. This
increase metal content negatively affects seed germination and overall plant
development. Nonetheless, plants have evolved numerous internal mechanisms
that help them to survive HM toxicity; by either avoiding or tolerating the stress.
Two stress-activated pathways that help the plant tolerate stress have attracted
much interest i.e. the glyoxalase system and reactive oxygen species (ROS) -
antioxidant system as they detoxify methylglyoxal (MG) and ROS. / 2021-08-31
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Diagn?stico de plasma de c?todo oco: an?lise da a??o de plasma de arg?nio e Ar-H2 para a deposi??o de filmes finos de tit?nio em p?s-descargaSilva, Bruno Felipe Costa da 05 July 2013 (has links)
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Previous issue date: 2013-07-05 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / Plasma DC hollow cathode has been used for film deposition by sputtering with release of neutral atoms from the cathode. The DC Plasma Ar-H2 hollow cathode currently used in the industry has proven to be effective in cleaning surfaces and thin film deposition when compared to argon plasma. When we wish to avoid the effects of ion bombardment on the substrate discharge, it uses the post-discharge region. Were generated by discharge plasma of argon and hydrogen hollow cathode deposition of thin films of titanium on glass substrate. The optical emission spectroscopy was used for the post-discharge diagnosis. The films formed were analyzed by mechanical profilometry technique. It was observed that in the spectrum of the excitation lines of argon occurred species. There are variations in the rate of deposition of titanium on the glass substrate for different process parameters such as deposition time, distance and discharge working gases. It was noted an increase in intensity of the lines of argon compared with the lines of titanium. Deposition with argon and hydrogen in glass sample observed a higher rate deposition of titanium as more closer the sample was in the discharge / O Plasma DC de catodo oco vem sendo utilizado para a deposi??o de filmes atrav?s de sputtering com libera??o de ?tomos neutros do c?todo. O Plasma DC de Ar-H2 de catodo oco usado atualmente na ind?stria tem demonstrado ser eficiente na limpeza de superf?cies e deposi??o de filmes finos quando comparado ao plasma de arg?nio. Quando desejamos evitar os efeitos do bombardeamento i?nico da descarga no substrato, utiliza-se a regi?o de p?s-descarga. Geraram-se descargas por plasma de arg?nio e hidrog?nio em catodo oco para deposi??o de filmes finos de tit?nio em substrato de vidro. A espectroscopia de emiss?o ?tica foi empregada para o diagn?stico na p?s-descarga. Os filmes formados foram analisados atrav?s da t?cnica de perfilometria mec?nica. Observou-se que no espectro das linhas de arg?nio ocorreu excita??o de esp?cies. Verificaram-se varia??es para a taxa de deposi??o do tit?nio sobre o substrato de vidro para diferentes par?metros do processo como: tempo de deposi??o, dist?ncia da descarga e gases de trabalho. Contatou-se um aumento da intensidade das linhas de arg?nio quando comparadas com as linhas de tit?nio. Para deposi??o com Arg?nio e hidrog?nio em amostra de vidro observou uma maior taxa deposi??o de tit?nio quanto mais pr?xima a amostra se encontrava da descarga
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Diagn?stico de descarga de c?todo oco de ar e p?s-descarga Ar N2 por espectroscopia de emiss?o ?ptica e espectrometria de massaSantos, Edson Jos? da Costa 05 July 2013 (has links)
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Previous issue date: 2013-07-05 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / Many applications require that the plasma discharge is produced apart from the surface to be processed, thus preventing damage caused by bombardment and/or plasma radiation. In the post-discharge regime in various applications thermally sensitive materials can be used. In this work, active species produced by discharge and post-discharge hollow cathode were diagnosed by optical emission spectroscopy and mass spectrometry. The discharge was produced with the gases Ar and Ar - N2 gas flow ranging from 1 to 6 cm3/min and electric current between 150 to 600 mA. It was estimated that the ion density inside the hollow cathode, with 2 mm diameter ranged between 7.71 and 14.1 x 1015 cm-3. It was observed that the gas flow and the electric current changes the emission intensity of Ar and N2 species. The major ionic species detected by quadrupole mass spectrometry were Ar+ and N2+. The ratio of optical emission intensities of N2(1 +)/Ar(811 nm) was related to the partial pressure of N2 after the hollow cathode discharge at low pressure / Muitas aplica??es de plasma exigem que a descarga seja produzida distante da superf?cie a ser processada, evitando assim danos causados pelo bombardeamento e/ou radia??o do plasma. Nesse regime de p?s-descarga v?rias aplica??es em materiais termicamente sens?veis podem ser utilizadas. Neste trabalho esp?cies ativas produzidas por descarga e p?s-descarga de catodo oco foram diagnosticadas por espectroscopia de emiss?o ?ptica e espectrometria de massa. A descarga foi produzida com os gases Ar e mistura Ar - N2 com fluxo de g?s variando de 1 a 6 cm3/min e corrente el?trica entre 150 a 600 mA. Estimou-se que a densidade de ?ons no interior do c?todo oco, com 2 mm de di?metro, variou entre 7,71 e 14,1 x 1015 cm-3. Observou-se que o fluxo de g?s e a corrente el?trica alteram a intensidade de emiss?o das esp?cies de Ar e N2. As principais esp?cies i?nicas detectadas por espectrometria de massa quadrupolar foram de Ar+ e N2+. A raz?o das intensidades de emiss?o ?tica de N2 (1 +)/Ar(811 nm) foi relacionada com a press?o parcial de N2 na p?s-descarga de c?todo oco em baixa press?o
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Descarga em barreira diel?trica: constru??o de um reator DBD e caracteriza??o mediante an?lises ?pticas e el?tricas do plasma produzidoSouza, Ivan Alves de 21 June 2013 (has links)
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Previous issue date: 2013-06-21 / The plasma produced by Dielectric Barrier Discharge (DBD) is a promising technique for producing plasma in atmospheric pressure and has been highlighted in several areas, especially in biomedical and textile industry, this is due to the fact that the plasma generated by DBD not reaches high temperatures, enabling use it for thermally sensitive materials. But still it is necessary the development of research related to understanding of the chemical, physical and biological interaction between the non-thermal plasma at atmospheric pressure with cells, tissues, organs and organisms.
This work proposes to develop equipment DBD and characterize it in order to obtain a better understanding of the process parameters of plasma production and how it behaves under the parameters adopted in the process, such as distance, frequency and voltage applied between electrodes. For this purpose two techniques were used to characterize distinct from each other. The first was the method of Lissajous figures, this technique is quite effective and accurately for complete electrical characterization equipment DBD. The second technique used was Optical Emission Spectroscopy (EEO) very effective tool for the diagnosis of plasma with it being possible to identify the excited species present in the plasma produced.
Finally comparing the data obtained by the two techniques was possible to identify a set of parameters that optimize the production when combined DBD plasma atmosphere in the equipment was built precisely in this condition 0.5mm-15kV 600Hz, giving way for further work / O plasma produzido por Descarga em Barreira Diel?trica (DBD) ? uma promissora t?cnica de produ??o de plasma em press?o atmosf?rica e vem se destacando em diversas ?reas, principalmente na biom?dica e ind?stria t?xtil, isso se deve ao fato de que o plasma gerado por DBD n?o atinge grandes temperaturas, possibilitando utiliz?-lo em materiais termicamente sens?veis. Por?m, ainda faz-se necess?rio o desenvolvimento de pesquisas relacionadas ao dom?nio e compreens?o dos mecanismos qu?micos, f?sicos e biol?gicos da intera??o entre o plasma n?o t?rmico ? press?o atmosf?rica com c?lulas, tecidos, ?rg?os e microrganismos.
O presente trabalho se prop?s a desenvolver um equipamento DBD e caracteriz?-lo para assim obter um maior conhecimento dos par?metros do processo de produ??o de plasma e de como este se comporta mediante os par?metros adotados no processo, tais como dist?ncia, frequ?ncia e voltagem aplicada entre eletrodos. Para este fim foram utilizadas duas t?cnicas de caracteriza??o bem distintas entre si. A primeira foi o m?todo das figuras de Lissajous, essa t?cnica ? bastante eficaz e precisa para uma completa caracteriza??o el?trica de equipamentos DBD. A segunda t?cnica usada foi Espectroscopia de Emiss?o ?ptica (EEO) uma ferramenta bastante eficaz para o diagn?stico de plasma sendo poss?vel com ela identificar as esp?cies excitadas presentes no plasma produzido.
Por fim confrontando os dados obtidos mediante as duas t?cnicas foi poss?vel identificar um conjunto de par?metros que quando associados aperfei?oam a produ??o do plasma DBD atmosf?rico no equipamento constru?do isso ocorreu mais precisamente na condi??o 0,5mm-600Hz-15kV, dando rumo para trabalhos futuros
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