With the use of photoluminescence (PL) spectroscopy one can able to get a great deal of information about electronic structure and optical processes in semiconductors by the aid of optical characterization. Among various compound semiconductors, Cadmium Sulfide (CdS) and Gallium Selenide (GaSe) are interesting materials for their PL emissions. Particularly, due to its strong anisotropy, investigation of GaSe necessitates new experimental approaches to the PL technique. We have designed, fabricated and used new experimental set-up for this purpose. In this thesis, we have investigated the PL spectra of both CdS and GaSe as a function of temperature. We observed interesting features in these samples. These features were analyzed experimentally and described by taking the band structure of the crystals into account. From the excitonic emissions, we determined the bandgap energy of both materials. We studied various peaks that appear in the PL spectra and their origin in the material. We have found that donor acceptor transitions are effective in CdS at low temperatures. A transition giving rise to a red emission was observed and attributed to a donor level which is likely to result form an S vacancy in CdS crystal. The PL peaks with energy close to the bandgap were observed in GaSe. These peak were attributed to the bound excitons connected either to the direct or indirect band edge of GaSe. The striking experimental finding in this work was the PL spectra of GaSe measured in different angular position with respect to the crystal axis. We observed that PL spectra exhibit substantial differences when the angular position of the laser beam and the detector is changed. The optical anisotropy which is responsible for these differences was measured experimentally and discussed by considering the selection rules of the band states of GaSe.

O dano produzido por radiação em monocristais de KCl contendo centros U, (íons de H- ou D- substitucionais) mostrou ser dependente tanto da temperatura como da pureza espectral da radiação u.v. utilizada. A interação entre centros F e U2 (átomos de H&#176 ou D&#176 intersticiais), produtos da irradiação, dá origem a novas transições óticas na região do espectro visível, em concordância com as previsões de um modelo proposto. Foi estudado o efeito isotópico sobre os defeitos produzidos pela radiação e sobre a largura das bandas de absorção. Experiências sobre irradiação por u.v. e por raios x em KCl com pares H- H- alinhados são também discutidas / The radiation damage of KCl single crystals containing U centers (substitutional H- ou D- ions) is found to be dependent on the temperature and on the spectral purity of the u.v. radiation used. The interaction between F centers and U centers, (interstitial H&#176 or D&#176 atoms), products of the radiation damage, gives rise to new optical transitions in the visible part of the spectra according to the predictions of a proposed model. The isotope effect on the radiation damage by u.v. and by X-rays on KCl with H- H- aligned pairs are also discussed

O dano produzido por radiação em monocristais de KCl contendo centros U, (íons de H- ou D- substitucionais) mostrou ser dependente tanto da temperatura como da pureza espectral da radiação u.v. utilizada. A interação entre centros F e U2 (átomos de H&#176 ou D&#176 intersticiais), produtos da irradiação, dá origem a novas transições óticas na região do espectro visível, em concordância com as previsões de um modelo proposto. Foi estudado o efeito isotópico sobre os defeitos produzidos pela radiação e sobre a largura das bandas de absorção. Experiências sobre irradiação por u.v. e por raios x em KCl com pares H- H- alinhados são também discutidas / The radiation damage of KCl single crystals containing U centers (substitutional H- ou D- ions) is found to be dependent on the temperature and on the spectral purity of the u.v. radiation used. The interaction between F centers and U centers, (interstitial H&#176 or D&#176 atoms), products of the radiation damage, gives rise to new optical transitions in the visible part of the spectra according to the predictions of a proposed model. The isotope effect on the radiation damage by u.v. and by X-rays on KCl with H- H- aligned pairs are also discussed

Avec l'apparition de nouveaux systèmes laser ultra-courts, des intensités laser extrêmement élevées sont devenues accessibles, permettant ainsi un traitement au laser de pratiquement tous les matériaux. En conséquence, les techniques de traitement extrêmement précises sont en cours de développement étendant considérablement le nombre des applications industrielles et médicales correspondantes. Des progrès dans ce domaine nécessitent une meilleure compréhension des processus fondamentaux impliqués dans les interactions laser. De plus le succès à l’international du développement et de l’utilisation de systèmes laser de forte puissance, dépend de la capacité de la définition minutieuse du seuil d’endommagement de leurs composants optiques. Ces points illustrent l'importance d'une modélisation numérique détaillée des interactions de laser avec des matériaux diélectriques. Sous irradiation laser, des électrons germes apparaissent dans la bande de conduction des matériaux diélectriques en raison de processus de photo-ionisation. En collision avec un troisième corps, ces électrons sont encore chauffés dans le domaine du laser. Lorsque l'énergie des électrons de seuil est atteinte, l'ionisation par impact d'électrons commence. Dans le même temps, les impulsions laser considérées sont si courtes que le sous-système électronique n'a pas le temps d'atteindre un état d'équilibre. Les propriétés optiques résultant sont affectées et la définition du critère de dommages devrait être révisée. Cela représente l'approche proposée pour le non-équilibre et fournit une description détaillée de tous les processus impliqués. En particulier, on considère le processus et l’impact de photo- ionisation, ainsi que électron-électron, électron-phonon et les collisions électron-ion. La distribution d'énergie des électrons et le chauffage de sous-systèmes électroniques et phonons est discutée. Le rôle des paramètres du laser (longueur d'onde, durée d'impulsion, fluence) et les propriétés des matériaux (de l'écart de l'énergie, de la structure de bande) sont étudiées. Le temps de thermalisation est calculé et caractérise l'état de non-équilibre en fonction de la durée d'impulsion du laser. Un nouveau critère thermique est proposé pour la définition des dommages sur la base des énergies d'électrons et phonons. Les seuils d’endommagement calculés sont comparés aux résultats expérimentaux récents. Une analyse d'autres critères (claquage optique classique et thermique) est également effectuée / With the appearance of new ultra-short laser systems, extremely high laser intensities became accessible thus allowing laser treatment of practically all materials. As a result, extremely precise processing techniques are under development considerably extending the number of the corresponding industrial and medical applications. Further progress in this field requires a better understanding of fundamental processes involved in the laser interactions. In addition, the success of several national and international involving the development and use of high power laser systems depends on the capacity of careful definition of damage threshold of their optical components. These points illustrate the importance of a detailed numerical modeling of laser interactions with dielectric materials. Under laser irradiation, seed electrons appear in the conduction band of dielectric materials due to photo-ionization process. Colliding with a third-body, these electrons are further heated in laser field. When the threshold electron energy is reached, electron-impact ionization begins. At the same time, the considered laser pulses are so short that electron sub-system has no time to reach an equilibrium state. The resulting optical properties are affected and the definition of the damage criterion should be revised. The proposed approach accounts for the non-equilibrium and provides a detailed description of all the involved processes. In particular, we consider the photo- and impact-ionization processes, as well as electron-electron, electron-phonon and electron-ion collisions. The electron energy distribution and heating of electronic and phonon subsystems is discussed. The role of laser parameters (wavelength, pulse duration, fluence) and material properties (energy gap, band structure) is investigated. The thermalization time is calculated and characterizes the non-equilibrium state as a function of laser pulse duration. A novel thermal criterion is proposed for damage definition based on the electron and phonon energies. The calculated damage thresholds are compared with recent experimental findings. An analysis of other criteria (classical optical breakdown and thermal) is also performed

This thesis reports a passive method for Fermi level regulation in quantum dot assemblies through ground state transfer between QDs. Here, ZnTe/CdS, and PbSe/CdSe core/shell QDs were used as valence band electron donors, while Cu containing CdS or ZnSe acts as electron acceptor QDs. Prior to study of ground state charge transfer process, this report discusses the synthesis of ZnTe/CdS, and PbSe/CdSe core shell QDs, which are later used to study charge transfer. Since ZnTe QDs are unstable and prone to oxidation, a CdS coated ZnTe QDs were used. Growing a CdS shell on ZnTe core is difficult because high reduction potential of Te. To overcome this problem, partially reduced sulphur is used for the synthesis of ZnTe/CdS. The peculiar optical properties exhibited by ZnTe/CdS also have been discussed. Even though the synthesis of Lead chalcogenide nanoparticles has been investigated previously, certain inconsistencies between the behavior expected from known mechanisms and empirical observations. An anion exchange mechanism is proposed and demonstrated to be involved in PbSe formation. Both ZnTe and PbSe based QDs are extensively used to study hole injection and copper containing QDs were used as acceptors. The charge transfer has been studied using optical spectroscopy. The structure and composition of the assemblies was identified using powder crystallography, electron-microscopy and composition analysis. The unique physical and chemical properties of these materials are exciting both fundamentally as well as from the point of view of applications.