Η κατασκευή συσκευών μικροηλεκτρονικής με οργανικούς ημιαγωγούς όπως τρανζίστορς και φωτοεκπομποί δίοδοι οργανικών (FETs, OLEDs), αναπτύσσεται ταχύτατα τα τελευταία χρόνια. Οι φυσικές και χημικές αλληλεπιδράσεις που συμβαίνουν στις διεπιφάνειες των οργανικών με τα ηλεκτρόδια παίζουν καθοριστικό ρόλο στη λειτουργία τέτοιων συσκευών και επομένως η μελέτη της διεπιφανειακής ηλεκτρονικής δομής είναι σημαντική για την κατανόηση της λειτουργίας αυτών των διατάξεων. Στην παρούσα εργασία η ηλεκτρονική δομή των διεπιφανειών ενός συζυγιακού ολιγομερούς (Ooct-OPV5) με ανόργανα υποστρώματα, συγκεκριμένα το οξείδιο Ινδίου-Κασσιτέρου (ITO), τον πολυκρυσταλλικό Au, την επιφάνεια Si(111) (Si με προσμίξεις τύπου –Ν και -P) και υπέρλεπτα υμένια SiO2(1-5 nm) / Si(111), μελετήθηκε με φασματοσκοπίες φωτοηλεκτρονίων από ακτίνες –Χ και υπεριώδες (XPS, UPS). Το Ooct-OPV5 χρησιμοποιείται ως πρότυπο για το poly(p-phenylenevinylene) (PPV), ένα πολυμερές που έχει ήδη χρησιμοποιηθεί σε συσκευές OLEDs. Το ITO χρησιμοποιείται ως άνοδος στα OLEDs επειδή είναι διαφανές και έχει υψηλή ηλεκτρική αγωγιμότητα. Ο χρυσός είναι αδρανές υπόστρωμα που χρησιμοποιείται ως ηλεκτρόδιο στα FETs. Τέλος, η μελέτη διεπιφανειών του οργανικού με το Si παρουσιάζει ενδιαφέρον, προκειμένου να ενσωματωθούν οι οργανικοί ημιαγωγοί σε μικροηλεκτρονικές συσκευές με βάση το Si. Η μελέτη έγινε σε σύστημα υπερυψηλού κενού (UHV) με τις τεχνικές XPS και UPS. Τα υποστρώματα καθαρίζονταν in-situ με ιοντοβολή με Ar+ και θέρμανση. Ακολούθως γινόταν σταδιακή απόθεση του ολιγομερούς και παρασκευάζονταν υπέρλεπτα υμένια (πάχους ~10 nm) πάνω στα καθαρά υποστρώματα. Σε κάθε στάδιο της απόθεσης λαμβάνονταν τα φάσματα XPS του οργανικού και των υποστρωμάτων. Από την ανάλυση των φασμάτων αυτών προσδιορίζονται οι διεπιφανειακές αλληλεπιδράσεις και η μεταβολή της κάμψης των ζωνών των ημιαγώγιμων υλικών. Με τη φασματοσκοπία UPS μελετάται η ζώνη σθένους της διεπιφάνειας και μετράται η διεπιφανειακή διπολική στοιβάδα. Από το συνδυασμό των πειραματικών αποτελεσμάτων μπορούν να κατασκευάζονται σχηματικά διαγράμματα των ζωνών στις διεπιφάνειες. Με βάση τα πειραματικά αποτελέσματα καταλήγουμε στα εξής συμπεράσματα: Στις διεπιφάνειες του ολιγομερούς με το ITO, τον Au, το Si (τύπου -p) και το SiO2(1-1.8 nm)/Si(111) υπάρχει διεπιφανειακή διπολική στοιβάδα (eD) ενώ στη διεπιφάνεια Ooct-OPV5/ Si (τύπου -n) όχι. Αυτά τα διεπιφανειακά δίπολα σχετίζονται με την ύπαρξη διεπιφανειακών καταστάσεων και εξυπηρετούν τη μεταφορά φορτίου μεταξύ των υλικών που έρχονται σε επαφή στα πρώτα στάδια του σχηματισμού των διεπιφανειών. Κατά το σχηματισμό της διεπιφάνειας Ooct-OPV5/ Si (τύπου - p), το eD σχετίζεται με την αλληλεπίδραση των μορίων του ολιγομερούς με τις επιφανειακές καταστάσεις του Si. Στις διεπιφάνειες Ooct-OPV5/ με Au και Si, η μεταφορά φορτίου ολοκληρώνεται με τη μεταβολή της κάμψης των ζωνών του οργανικού υμενίου κατά ~0.20 eV. Τα φράγματα έγχυσης οπών (eΦbh) ή τα valence band offsets (ΔEV) καθορίστηκαν επίσης σε όλες τις περιπτώσεις. Στη διεπιφάνεια Ooct-OPV5 / Au το eΦbh μετρήθηκε 1.05 eV και επομένως ο Au είναι ακατάλληλο ηλεκτρόδιο για την έγχυση οπών. Το ITO αποδεικνύεται επίσης ακατάλληλο (eΦbh=1.45 eV) και η επιφάνειά του θα πρέπει να υφίσταται κατεργασία προκειμένου να χρησιμοποιείται ως άνοδος σε συσκευές OLEDs. Στην περίπτωση του Si, το valence band offset μεταξύ αυτού και του ολιγομερούς βρέθηκε ~0.4 eV. Η παραπέρα τροποποίηση της επιφάνειας του Si(111) με υπέρλεπτα υμένια SiO2 αυξάνει το ΔEV κατά ~0.2 eV. / The development of organic-based devices, like transistors and light emitting diodes (FETs, OLEDs), is progressing rapidly over the past few years. A great deal of the physics and chemistry that govern the performance of such devices occur at the interfaces between the organic components and the inorganic electrodes, making the study of the interfacial electronic properties essential. In this work, the electronic structure of the interface formed between a conjugated oligomer (Ooct-OPV5) and inorganic substrates, ιn particular indium-tin oxide (ITO), polycrystalline Au, the Si(111) surface (Si n- and p-doped), and ultrathin (1-5 nm) SiO2 films on Si(111), was studied by X-ray and Ultraviolet photoelectron spectroscopies (XPS, UPS). Ooct-OPV5 is a model for poly(p-phenylenevinylene) (PPV), a polymer that has already been used in OLEDs. ITO is the common anode used in OLEDs because of its transparency and high electrical conductivity. Gold was chosen due to its inert nature and because it is used as a source/drain in FETs. Finally, the study of organic/silicon structures is of great importance for the incorporation of organics in Si-based microelectronic systems. All XPS and UPS measurements were carried out in an ultrahigh vacuum (UHV) apparatus. All substrates were cleaned in-situ by Ar+ sputtering and annealing. High purity oligomer films of up to ~10 nm thickness were produced in-situ by stepwise deposition on the clean substrates. The evolution of the oligomer and substrate-related XPS peaks was followed during Ooct-OPV5 deposition on all substrates. Analysis of these spectra clarified the interfacial chemistry and band bending in the semiconducting materials. UPS spectroscopy is used for the determination of the valence band at the interface and the interfacial dipoles. The interfacial energy band diagrams were deduced in all cases from the combination of experimental results. Based on our experimental data we reached the following conclusions: Dipoles are formed at the interfaces of the oligomer with ITO, Au, Si (p-doped) and SiO2(1-1.8 nm)/Si(111), while the Ooct-OPV5/ Si (n-doped) interface is dipole free. These interface dipoles (eD) are related to the existence of interfacial states and serve for the charge transfer between the materials in contact at the initial stages of the interface formation. In the case of the Ooct-OPV5/ Si (p-doped) interface, eD is related to the interaction of the oligomer molecules with Si surface states. At the Ooct-OPV5/Au and Si interfaces, the charge transfer is completed with a band bending of ~0.20 eV in the oligomer film. The hole injection barriers (eΦbh) or valence band offsets (ΔEV) were also determined in all interfaces. This barrier was measured 1.05 eV at the Ooct-OPV5/ Au interface, and thus Au is inappropriate electrode for hole injection. ITO is also proved a poor hole-injecting electrode (eΦbh=1.45 eV), and thus its surface should be modified by treatments when used as an anode in OLEDs. On the other hand, the valence band offset between the Si substrate and the oligomer is measured ~0.4 eV. Modification of the Si(111) surface with ultra-thin SiO2 layers increases ΔEV by ~0.2 eV.

In this thesis, I present a comprehensive study of the interfacial electronic structure and thin film growth of two types of dipolar organic semiconductors on noble metals by employing a surface science approach, which underlines the critical role of surface electronic states in determining the interfacial electronic structure and self-assembly of organic semiconductors. I show that the electronic structure at organic/metal interfaces is complex and depends on important factors such as molecular adsorption configuration, surface/molecule coupling strength, reactivity of the substrate, molecular electrostatics, and local film structure. I demonstrate the fundamental capability of the image potential states and resonances in probing the local film environment, especially in systems consisting of inhomogeneous film structure. I also show that the presence of adsorbates on a surface allows one to investigate quantum mechanical interference effects otherwise not accessible on the bare surface. The dipolar organic semiconductors studied here are vanadyl naphthalocyanine (VONc) and chloroboron-subphthalocyanine (ClB-SubPc). The single crystals of gold and copper with hexagonal surface symmetry (111) were used to investigate the interfacial properties of VONc and ClB-SubPc, respectively. The fundamental understanding of self-assembly of large π-conjugated organic semiconductors on metals is a crucial step in controlling fabrication of supramolecular structures. Here, I provide a first step in this direction with a detailed and quantitative analysis of molecular nearest-neighbor distances that unravels the fundamental intermolecular interactions of organic semiconductors on transition metal surfaces. I additionally investigated the interfacial electronic structure of these organic semiconductors to examine the relation between molecular adsorption orientation and charge transfer across the interface.

The purpose of the research work, presented in this thesis is to offer a detailed atomic level study of interfaces created by adsorption of organic molecules on metals and metal oxides to point out significant impact of substrate, dye structure as well as different mediators on the charge transfer at these interfaces, which is proven to influence the device performance to a great extent. Adsorption of organic photosensitive molecules on metals and metal-oxides is the main focus of this thesis. Phthalocyanines which are organic semiconductors offer a broad range of properties, such as thermal and chemical stability, high charge mobility and strong absorption coefficient in the visible and near-IR regions, which make them very attractive to be applied in various systems and devices. Fuel cells, organic field-effect transistors (OFETs), organic light emitting diodes (OLEDs) and solar cells are examples of phthalocyanine’s applications. The main focus of this work is to characterize the interfaces of Dye Sensitized Solar Cells (DSSCs). DSSC was invented by Michael Grätzel and Brian O’Regan in 1988. At the heart of this cell there is an oxide which is coated by a photosensitive dye. Under illumination, an electron is excited from HOMO to LUMO of the molecule, which can be further transferred to the conduction band of the oxide by a proper energy level alignment. The original state of the dye is regenerated by electron donation via the electrolyte, which usually is an organic solvent containing a redox couple e.g., iodide/triiodide. The iodide is regenerated by reduction of triiodide at the counter electrode. To improve the functionality of the cell, different additives can be added to the electrolyte. To mimic the interfaces of this cell, molecular layers of MPc (M: Fe, Zn, Mg) are adsorbed on both metallic surfaces, Au(111) and Pt(111), and rutile TiO2(110). Layers of iodine were inserted between metallic substrates and dyes to investigate the electronic properties and charge transfer at these multi-interface systems. 4-tert-butyl pyridine is a significant additive to the electrolyte and has proven to enhance the cell’s performance. This molecule was also adsorbed on Pt(111) and TiO2(110). Phthalocyanines were deposited by organic molecular beam deposition and 4TBP was evaporated at room temperature. Surface structures and reconstructions were confirmed by LEED measurements. Surface sensitive synchrotron radiation based spectroscopy methods, XPS and NEXAFS were applied to characterize these surfaces and interfaces. STM images directly give a topographical and electronic map over the surface. All measurements were carried out in UHV condition. When MPc was adsorbed on Au(111) and TiO2(110), charge transfer from molecule to substrate is suggested, while the opposite holds for MPc adsorbed on Pt(111). Moreover, stronger interaction between MPc and Pt(111) and TiO2(110) compared to Au(111) also demonstrates the effect of substrate on the charge transfer at the interface. The stronger interaction observed for these two substrates disturbed the smooth growth of a monolayer; it also resulted in bending of the molecular plane. Interaction of MPc with metallic surfaces was modified by inserting iodine at the interface. Another substrate-related effect was observed when MgPc was adsorbed on TiO2(110);  and -cross linked surfaces, where the surface reconstruction directly affect the molecular configuration as well as electronic structure at the interface. Besides, it is shown that the d-orbital filling of the central metal atom in MPc plays an important role for the properties of the molecular layer as well as charge transfer at the interface. Upon adsorption of 4TBP on Pt(111), C-H bond is dissociatively broken and molecules is adsorbed with N atoms down. Modification of surface by iodine, prevent this dissociation. In the low coverage of iodine, there is a competition between 4TBP and iodine to directly bind to Pt(111). Investigation on the adsorption of 4TBP on TiO2(110) illustrated that these molecules in low coverage regime, prefer the oxygen vacancy sites and their adsorption on these sites, results in a downward band bending at the substrate’s surface. / <p>QC 20131203</p>

No description available.

Organic complementary circuits are attracting significant attention due to their high power efficiency and operation robustness, driven by the demands for low-cost, large-area and flexible devices. Previous demonstrations of organic complementary circuits often show high operating voltage, small noise margins, low dc gain, and electrical instability such as hysteresis and threshold voltage shifts. There are two obstacles to developing organic complementary circuits: the lack of high-performance n-channel OFET devices, and the processing difficulty of integrating both n- and p-channel organic field-effect transistors (OFETs) on the same substrate. The operating characteristics of OFETs are often governed by the boundary conditions imposed by the device architecture, such as interfaces and contacts instead of the properties of the semiconductor material. Therefore, the performance of OFETs is often limited if either of the essential interfaces or contacts next to the semiconductor and the channel are not optimized. This dissertation presents research work performed on OFETs and OFET-based complementary inverters in an attempt to address some of these knowledge issues. The objective is to develop high-performance OFETs, with a focus on n-channel OFETs through interface engineering both at the interface between the organic semiconductor and the source/drain electrodes, and at the interface between the organic semiconductor and gate dielectric. Through interface engineering, both p- and n-channel high-performance low-voltage OFETs are realized with high mobilities, low threshold voltages, low subthreshold slopes, and high on/off current ratios. Optimization at the gate dielectric/semiconductor also gives OFET devices excellent reproducibility and good electrical stability under multiple test cycles and continuous electrical stress. Finally, with the interfaces and contacts optimized for both p- and n-channel charge transport, the integration of n- and p-channel OFETs with comparable performance are demonstrated in complementary inverters. The research achieves inverters with a high-gain, a low operation voltage, good electrical stability (absence of hysteresis), and a high switching-speed. A preliminary study of the encapsulation of OFETs and inverters with an additional protective layer is also presented to validate the practicality of organic devices containing air-sensitive n-channel transport.

Thesis (Ph.D.); Submitted to Iowa State Univ., Ames, IA (US); 12 Dec 2003. / Published through the Information Bridge: DOE Scientific and Technical Information. "IS-T 2605" Chang-Hwan Kim. 12/12/2003. Report is also available in paper and microfiche from NTIS.

Thesis (Ph. D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2009. / Committee Chair: Brédas, Jean-Luc; Committee Member: Kippelen, Bernard; Committee Member: Marder, Seth; Committee Member: Sherrill, David; Committee Member: Whetten, Robert. Part of the SMARTech Electronic Thesis and Dissertation Collection.

Thesis (Ph.D.)--York University, 2007. Graduate Programme in Physics and Astronomy. / Typescript. Includes bibliographical references (leaves 120-124). Also available on the Internet. MODE OF ACCESS via web browser by entering the following URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:NR32065

Thesis (Ph. D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2005. / Morhan Srinivasarao, Committee Member ; CP Wong, Committee Member ; David M. Collard, Committee Chair ; Marcus Weck, Committee Member ; Laren Tolbert, Committee Member.

Organic field-effect transistors (OFET) have attracted considerable interests as a promising technology for the next-generation flexible electronics. Thioacenes have recently emerged as potential semiconducting materials for OFETs. On the other hand, Photovoltaic (PV) technology is regarded as a prospective alternative for green and renewable energy source. Recently, dye sensitized solar cells (DSSCs) have drawn intensive attention and showed great potential for practical application. Herein, the research in this thesis would include the synthesis and characterization of novel thioacene-based semiconductors for OFET and DSSC applications. To begin with, a general review on the current status of organic semiconductors for OFET and DSSC applications was presented in Chapter 1. In chapter 2, a series of novel benzodithieno[3,2-b]thiophene derivatives (BDTT-n) with different lateral alkyloxy groups were designed and synthesized. In addition, alkyloxy-substituted benzo[2,1-b:3,4-b’]bis-[1]benzothiophenes derivatives (BBBT-n) were also synthesized. The performances of OFETs based on BDTT-n and BBBT-n have been fully investigated. Among them, BDTT-4 based OFET exhibited the highest hole mobility of 1.74 cm 2 /(Vs) with a current on/off ratio above 10 7 without annealing. In chapter 3, a novel series of naphthodithiophene-based oligomers with D-A- D-A- D structure motif were designed and synthesized. All these oligomers have 2 been fully characterized by NMR and mass spectrometry. The hole mobility properties of these oligomers were determined in OFETs as fabricated by drop- coating technique. These oligomers exhibited typical p-type semiconducting behavior. A mobility of 1.6x10 -2 cm 2 /(Vs) was demonstrated by ENBT based OFET with a current on/off ratio in the range of 10 5-7 after annealing at 160ºC. Besides, in chapter 4, a novel [pi]-bridge, namely naphthodithienothiophene was developed and employed to explore photosensitizers for DSSC application. In this work, four novel photosensitizers with D-A-[pi]-A or D-[pi]-A structure motif were designed and synthesized in which the carbazole or triphenylamine derivative was used as a donating group and benzothiadiazole was applied as auxiliary accepting group. The performances of DSSCs based on these photosensitizers have been fully investigated. Among them, CB-NDTT- CA based device exhibited the highest power conversion efficiency (PCE) of 7.29%. Meanwhile, the interfacial properties of these photosensitizers anchored on TiO 2 have also been studied by ab-initio simulation and Gaussian calculations. In chapter 5, another novel series of photosensitizers with benzodithienothiophene as the [pi]-bridge would be presented, in which different donors, auxiliary acceptors, and structures were incorporated into the frameworks of D-[pi]-A motif to investigate the relationship between the structure and properties. The performances of DSSCs based on these photosensitizers have been fully investigated, and BD-5 based device exhibited the best power conversion efficiency (PCE) of 4.66%. Furthermore, it was demonstrated that molecular engineering was an efficient way to modulate the performance of the DSSCs in 3 which benzothiadiazole was used as an effective auxiliary accepting group in constructing photosensitizers with D-A-[pi]-A structure motif. The di-anchoring approach was also found to be a promising method to design photosensitizers with improved performance.