Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.

Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007. / Philip First, Committee Member ; Ian F. Akyildiz, Committee Member ; Russell Dupuis, Committee Member ; James D. Meindl, Committee Chair ; Willianm R. Callen, Committee Member.

Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Sanjay Banerjee. Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Thesis (M.S.E.C.E. )--University of Massachusetts Amherst, 2008. / Includes bibliographical references (p. 84-88).

Thesis (M.S.)--Rochester Institute of Technology, 1992. / Typescript. Includes bibliographical references (leaves 65-68).

abstract: Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2015

Thesis (MTech (Electrical Engineering))--Cape Peninsula University of Technology. / Front-end power converters for nanosatellite applications demand better performance in accurate reference tracking because of the wide-range input voltage of the solar panels. The very tight output voltage requirements demand a robust, reliable, and high-efficiency converter. The control of such a converter is very complex and time consuming to design. Two commonly used control modes are current and voltage control. The design and implementation of a voltage controller for DC–DC power converter is simpler but compared to current mode controller, does not do provide for overcurrent protection. A single-ended primary inductance converter (SEPIC) was selected for this research work because of its ability to buck or boost the input voltage coupled with the ability to provide noninverting polarity with respect to the input voltage. Parameter values for the converter studied are used to analyse and design both the voltage and the current mode controllers for the nanosatellite front-end power converter. Output voltage reference tracking with step and ramp changes in the input voltage is evaluated in terms of the time taken to reach steady-state after the induced disturbances and either the overshoot or undershoot of the output voltage reference. The design of analogue pulse width modulation (PWM) study was carried out in order to drive the metal-oxide-semiconductor field-effect transistor (MOSFET) switch. For the two controllers, changes in the reference output voltage in response to load changes are also studied. An examination of the effects of solar radiation on the MOSFET switch was conducted; this switch is the main component of the front-end DC–DC power converter for a nanosatellite. At the more general level the examination also provided information on the response of the semiconductor technology in space application. The overall purpose of studying the MOSFET switch was to investigate the mechanisms that will facilitate its ability of switching ‘on’ and ‘off’ without failure as a result of solar radiation. The effects of solar radiation on MOSFET device in space, has resulted in more malfunctions of these devices in the past five years than over the preceding 40 years.

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