Thesis (MSc. Agriculture (Horticulture)) -- University of Limpopo, 2018 / The production of tomato (Solanum lycopersicum L.) plants had been crucial in various parts of the world since tomato fruit contribute widely to human health. However, most tomato cultivars had been shown to be highly susceptible to plant-parasitic nematodes, especially the root-knot (Meloidogyne species) nematodes. Two cucurbitacin-containing phytonematicides, namely, Nemarioc-AL and Nemafric-BL phytonematicides, manufactured from fruits of Cucumis species, are being researched and developed in South Africa as an alternative for management of Meloidogyne species. Most trials on tomato plants and cucurbitacin-containing phytonematicides had been under greenhouse conditions, with limited information on their interactive effects under microplot and field conditions. The objectives of this study were: (1) to determine the interactive effects of Nemarioc-AL and Nemafric-BL phytonematicides on growth and accumulation of nutrient elements in leaf tissues of tomato plants under microplot conditions and (2) to investigate the interactive effects of Nemarioc-AL and Nemafric-BL phytonematicides on growth and accumulation of nutrient elements in leaf tissues of tomato plants under field conditions. In the microplot study, uniform four-week-old tomato cv. 'HTX 14' seedlings were transplanted in 4 L plastic bags containing loam soil and Hygromix-T at the 3:1 ratio (v/v). Plastic bags were inserted into holes at 0.50 m inter-row spacing and 0.60 m intra-row spacing. The 2 x 2 factorial trial, with the first and second factors being Nemarioc-AL and Nemafric-BL phytonematicides, respectively, each at two levels. The four treatments, namely, AL0BL0, AL0AL1, BL0BL1 and AL1BL1, were arranged in a randomised complete block design. Treatments were xxiv applied seven days after transplanting and repeated weekly until harvest. Under field conditions, uniform four-week-old tomato cv. 'HTX 14' seedlings were transplanted into the field at 0.50 m inter-row spacing and 0.60 m intra-row spacing. Treatments, experimental designs and application interval were as those under microplot conditions. At 60 days after the treatments, seedlings AL × BL interaction was not significant on all plant variables in Experiment 1 under microplot conditions, whereas in Experiment 2 the interaction was highly significant (P ≤ 0.01) on dry shoot mass, contributing 72% in total treatment variation (TTV) of the variable. Relative to untreated control, the two-way matrix showed that the interaction reduced dry shoot mass by 8%. Nemarioc-AL phytonematicide had a significant (P ≤ 0.05) effect on stem diameter in Experiment 1 under field conditions, whereas Nemafric-BL phytonematicide had significant effects on plant height in Experiment 2, contributing 39 and 56% in TTV of the respective variables. Relative to untreated control, Nemarioc-AL phytonematicide increased stem diameter by 4%, whereas Nemafric-BL phytonematicide increased plant height by 2%. The interaction was also significant (P ≤ 0.05) on Na and S and highly significant (P ≤ 0.01) on Zn, contributing 76, 26 and 6%, respectively, in TTV of the respective variables in Experiment 1 under field conditions. Using a two-way matrix, the interaction increased Na and S by 12 and 41%, respectively, but reduced Zn by 52%. In Experiment 2, the interaction was highly significant (P ≤ 0.01) on P alone, contributing 16% in TTV of the variable, with the interaction reducing P by 76%. Nemarioc-AL phytonematicide had significant effects (P ≤ 0.05) on Ca and highly significant effects (P ≤ 0.01) on S, contributing 31 and 58% in TTV of the respective variables in Experiment 1. Relative to untreated control, Nemarioc-AL phytonematicide increased P by 39%. In xxv Experiment 2, Nemarioc-AL phytonematicide had significant effects on Ca and highly significant effects (P ≤ 0.01) on S, contributing 66 and 49% in TTV of the respective variables. Relative to untreated control, Nemarioc-AL phytonematicide reduced Ca by 19% and S by 36%, respectively. Nemafric-BL phytonematicide had a significant effect (P ≤ 0.05) on P, contributing 33% in TTV of the variable in Experiment 1. Relative to untreated control, Nemafric-BL phytonematicide increased P by 41%. In Experiment 2, Nemafric-BL phytonematicide had significant effects (P ≤ 0.05) on S, contributing 40% in TTV of the variable. Relative to untreated control, Nemafric-BL phytonematicide reduced S by 33%. At 74 days after initiating the treatments under field conditions, the interaction of Nemarioc-AL and Nemafric-BL phytonematicides were not significant for plant height, stem diameter, fresh fruit and dry shoot mass in both experiments. Nemarioc-AL phytonematicide was also not significant in all plant variables in both experiments. Effects of Nemafric-BL phytonematicide were highly significant on dry shoot mass in Experiment 1 and stem diameter in Experiment 2, contributing 60 and 67% in TTV of the respective variables. Relative to untreated control, Nemafric-BL phytonematicide reduced dry shoot mass by 28% and increased stem diameter by 11% in Experiment 1 and Experiment 2, respectively. The AL × BL interaction had significant effects (P ≤ 0.05) on P, contributing 57% in TTV of the variable in Experiment 1. Relative to untreated control, the interaction increased P by 12%. In Experiment 2, the interaction had significant effects (P ≤ 0.05) on K, Mg, S and Mn, contributing 78, 65, 74 and 68% in TTV of the respective variables. Using a two-way matrix, relative to untreated control, the interaction increased K by 8%, but reduced Mg, Mn and S by 14, 82 and 1%, respectively. Nemarioc-AL phytonematicide was not significant in both the xxvi experiments, whereas Nemafric-BL phytonematicide had significant effects on Mg in Experiment 1, contributing 68% in TTV of the variable. Relative to untreated control, Nemafric-BL phytonematicide increased Mg by 15%. In conclusion, the interaction of Nemarioc-AL and Nemafric-BL phytonematicides were not compatible with each other as they had undesirable effects on growth of tomato plants and accumulation of most essential nutrient elements in leaf tissues of this plant. / National Research Foundation (NRF)

Traditional antennas have a lot of limitations as their performance is usually fixed by their initial geometry. On the other hand, modern communication systems are getting way to complicated compared to their earlier counterparts. This necessitates some special types of smart or reconfigurable antennas, which can dynamically adapt to the requirements of the communication systems more effectively. Using conventional single functional antennas is therefore not an efficient approach in these sort of communication systems. Considering all these factors, in this thesis, a beam steerable reconfigurable antenna system is presented that can yield the radiation patterns of multiple antennas with a single structure, necessary for 5G communication. This antenna system occupies comparatively much smaller space and can provide highly directive gain at different directions. It is expected that- in near future, further improvements of this type of antenna system can be performed to pave the way for some additional necessary functions required in modern communication systems.

Ces travaux s'inscrivent dans le cadre de la qualification des technologies GaN de UMS et plus particulièrement celle de la technologie GH25, et a pour objectif d’apporter un soutien direct au développement des technologies UMS à base de GaN. Le premier chapitre traite des généralités sur les HEMTs AlGaN/GaN. Le deuxième chapitre est consacré à la description des technologies GH50 et GH25 de UMS. Les éléments passifs de la technologie GH25 ont été caractérisés électriquement et thermiquement, puis des mesures de claquage utilisant une technique d’injection de courant de drain ont été mises en oeuvre sur des HEMTs de la technologie GH50 afin d’évaluer l'aire de sécurité de fonctionnement. Le troisième chapitre est dédié à l'étude des effets parasites rencontrés sur les deux technologies GH50 et GH25.Chacun des effets parasites est décrit puis caractérisé de façon approfondie. Le dernier chapitre se concentre sur l'étude de la fiabilité de la technologie GH25. Après avoir présenté les différentes variantes technologiques, les résultats des tests de vieillissement accéléré mis en oeuvre à UMS sont analysés afin d'évaluer leur impact sur la fiabilité de la technologieGH25 et d’identifier les mécanismes de dégradation et les effets parasites. / This work is incorporated within the framework of the qualification of UMS GaNtechnologies and more particularly of the GH25 technology, and aims to support thedevelopment of UMS GaN based technologies. The first part of this report deals withAlGaN/GaN HEMT generality. The second part is dedicated to the description of the UMStechnologies GH50 and GH25. Passive components of GH25 technology have beencharacterized through electrical and thermal measurement, and then breakdown measurementsusing a drain current injection technique have been carried out on GH50 HEMT in order toevaluate the safe operating area of these devices. The third part is dedicated to the study of theparasitic effects observed on the two technologies GH50 and GH25. Each of these parasiticeffects is described and fully characterized. The last part of this work focuses on the study ofthe GH25 technology. Technological variations are first introduced, and then results ofaccelerated aging test carried out at UMS are analyzed to evaluate their impact on thereliability of the GH25 technology and to identify wear out mechanism and parasitic effects.

Les travaux de these s’inscrivent dans le cadre de deux projets: ReAGaN et ExtremeGaN avec des industriels (UMS, Serma Technologies, Thales TRT) et des laboratoires derecherche (LEPMI, LAAS et l’université de Bristol).Les deux technologies GaN (GH50 et GH25) étudiées dans cette thèse sont fournies parla société United Monolithic Semiconductors (UMS) et elles ont été qualifiées durant cettethèse. Plusieurs composants ont subi des tests de vieillissement accéléré en températureréalisés par UMS, ensuite une campagne de caractérisation électrique approfondie a étéréalisée au laboratoire IMS afin d’étudier les effets parasites et les mécanismes de dégradationqui limitent la fiabilté de cette filière.Le premier chapitre traite les bases du transistor HEMT à base de GaN. Les avantagesdu matériau nitrure de gallium ainsi que les substrats adaptés au HEMT à base de GaN sontprésentés. Une brève description du marché europeen des composants GaN est donnée.Ensuite, la structure ainsi que le fonctionnement du HEMT AlGaN/GaN sont décrit ainsi queles deux technologies d’UMS.Le deuxième chapitre présente les tests de vieillissement utilisés pour l’analyse defiabilité. Ensuite, un état de l’art des effets parasites et des mécanismes de dégradation desHEMTs AlGaN/GaN est donné. Le projet ReAGaN est décrit et les différentes techniques decaractérisation utilisées durant les travaux de cette thèse sont présentées.Le troisième chapitre est divisé en quatre études de cas ; les trois premières sont dans lecadre du projet ReAGaN et la quatrième dans le cadre du projet Extreme GaN. Dans lapremière étude de cas, les mécanismes de conduction qui augmentent les courants de fuitesdes HEMTs AlGaN/GaN issus de la technologie GH50 ont été étudiés. La deuxième étude decas est dédiée à l’étude d’un effet parasite électrique qui apparait après un vieillissementaccéléré en température sur la caractéristique de la diode Schottky en polarisation directe.Dans la troisième étude de cas, l’influence de la variation de la fraction molaire des HEMTsAlGaN/GaN sur les paramètres électriques a été analysée. La dernière étude de cas consiste enla détermination des limites de fonctionnement et l’aire de sécurité de la technologie GH25d’UMS en réalisant les mesures des lieux de claquage en mode diode et en mode transistor. / This thesis is in the framework of two projects: ReAGaN and Extreme GaN withindustrials (UMS, Serma Technologies, Thales TRT) and academics (LEPMI, LAAS andUniversity of Bristol).The studied AlGaN/GaN HEMTs are provided by the society United MonolithicSemiconductors (UMS) from the GH50 and GH25 GaN processes that were qualified duringthis thesis. Many devices were submitted to high temperature accelerated life tests by UMSand characterized at IMS laboratory to study the parasitic effects and degradationsmechanisms that are limiting the electrical reliability of GaN based HEMTs technology.The first chapter gives an overview of the basics of GaN based high electron mobilitytransistors (HEMTs). Gallium Nitride material features are reviewed as well as substratessuited for GaN based devices. GaN market in Europe and the main industrial actors are listed.Furthermore, the structure and operation of GaN based HEMTs are described. In the last part,the two UMS GaN processes are described.The second chapter presents the life tests that are used for reliability studies. State of theart of parasitic effects and degradation mechanisms of AlGaN/GaN HEMTs is given.Furthermore, the ReAGaN project in which the main part of this thesis is involved isdescribed. The electrical characterization techniques used at IMS during this thesis arepresented.The third chapter is divided into four case studies; three case studies are in theframework of ReAGaN project and the fourth one in the Extreme GaN project. In the firstcase study, we investigate the conduction mechanisms inducing the leakage current inAlGaN/GaN HEMTs issued from GH50 process. The second case study is dedicated to thestudy of an electrical parasitic effect that appears on the Schottky diode forward characteristicafter temperature accelerated life tests. In the third case study, we study the influence of Almole fraction on the DC electrical parameters of AlGaN/GaN HEMTs. The last case studyconsists in the determination of the limits and safe operating area (SOA) of UMS GH25 GaNHEMTs by carrying out the two and three terminal breakdown voltages measurements.

No description available.

Switched and adaptive parasitic monopole array radiating structures are investigated. Antenna design is orientated toward increasing practicability for implementation in terrestrial wireless communication systems. A number of antennas are designed with the aid of optimization and commercial simulation software. Simulation procedure was verified with the experimental manufacture and measurement of the arrays. The antennas presented in this thesis comprise an active monopole surrounded by a ring of parasitic monopoles. Parasitic radiators are constructed with static loading to enable simple experimental realization. Beam positions of an electrically steered equivalent antenna are thus simulated. Antenna symmetry ensures the beam can be reproduced throughout the azimuth. Complex antenna geometries require antenna design through optimization. A genetic algorithm is employed with HFSS and NEC for electromagnetic analysis. The robust optimization method couples with simulation software flexibility to provide an effective design tool for arbitrary structures. The genetic algorithm is employed strictly for design and not complete structural optimization. Dual band, five and six element switched parasitic antennas are presented. Lumped elemental loading along the radiators provide resonance and directed radiation at two GSM frequencies. Load value, radiator dimension and spacing are incorporated as design parameters. Experimentally built, 10dB return loss bandwidths of 17.2% and 9.6% and front to back ratios of 12.6dB and 8.4dB at 900MHz and 1900MHz respectively are measured. To reduce the ground requirements of monopole arrays, a skirted ground structure for switched parasitic antennas is analyzed. A six element switched parasitic monopole array with conductive ground skirt exhibits a front to back ratio of 10.7dB and main lobe gain of 6.4dBi at 1.575GHz. Radiation is not elevated despite lateral ground terminating at the parasitic elements. Skirt height is observed to linearly control radiation elevation, depressing the principal lobe through 40 degrees from 23 degrees above the horizontal. The Electronically Steerable Passive Array Radiator or ESPAR antenna is an adaptive parasitic monopole array. An ESPAR radiating structure incorporating a conductive ground skirt is designed for operation at 2.4GHz. Utility is confirmed with a frequency sensitivity analysis showing consistent electrical characteristics over an 8.1% bandwidth. The antenna design is improved with optimization to reduce average principal lobe elevation from 25 degrees to 9.7 degrees.

Bibliography: leaves 87-96. This thesis investigates non-proteinaceous low molecular weight flavonoid and alkaloid compounds in Scurulla oortiana (Korth.) Danser grown on Camellia sinens. Three flavonols are identified in S. oortiana (Korth.) Danser growing on different hosts. The identification and characterisation of these flavonoids are carried out using various chromatographic and spectrometric procedures. Two purine alkaloids are isolated from and identified in S. oortiana (Korth.) Danser parasitizing tea plant, C. Sinensis. The antifungal activity of the phenolic compounds isolated from mistletoe parasitizing tea plant is examined.

<p>In wireless communication there is commonly much unnecessarycommunication made in directions not pointing towards the recipient. Normallyomni directional antennas are being used which sends the same amount ofenergy in all directions equally. This waste of energy reduces the lifetime ofbattery powered units and causes more traffic collisions than necessary. Oneway of minimizing this wasted energy and traffic collisions, is to use anothertype of antenna called “smart antenna”. These antennas can use selectableradiation patterns depending on the situation and thus drastically minimize theunnecessary energy waste. Smart antennas also provide the ability to sense thedirection of incoming signals which is favorable for physical layout mappingsuch as orientation.This thesis presents the prototyping of a new type of smart antenna called theSPIDA smart antenna. This antenna is a cheap to produce smart antennadesigned for the 2.4 GHz frequency band. The SPIDA smart antenna can usesixty-four different signal patterns with the control of six separate directionalmodes, amongst these patterns are six single direction patterns, an omnidirectionalsignal pattern and fifty-six combi-direction patterns. The thesispresents complete building instructions, evaluation data and functional driversfor the SPIDA smart antenna.</p>

In order to correctly perform circuit simulation, it is crucial that parasitic capacitances near devices are accurately extracted and are consistent with the SPICE models. Although 3D device simulation can be used to extract such parasitics, it is expensive and does not consider the effects of nearby interconnect and devices in a layout. Conventional rule-based layout parasitic extraction (LPE) tools which are used for interconnect extraction are inaccurate in modeling 3D effects near devices. In this thesis, we propose a methodology which combines 3D field solver based extraction with the ability to exclude specific parasitics from among the parameters in the SPICE model. We use this methodology to extract parasitics due to fringing fields and sidewall capacitances in MOSFETs, bipolar transistors and FinFETs in advanced process nodes. We analyze the importance of considering layout and process variables in device extraction by comparing with standard SPICE models. The results are validated by circuit simulation using predictive technology models and test chips. We also demonstrate the versatility of this flow by modeling the capacitance contributions of the raised gate profile in nanoscale FinFETs.

Magnetic components, such as inductors and transformers, have important effects on the efficiency and performance of switching power supplies; their parasitic properties directly impact the high frequency properties which can cause lot-to-lot variation or unanticipated and non-ideal operation. They are also amongst the most problematic components to design, often requiring numerous design-prototype-test interactions. The electrostatic and electromagnetic analysis of wound components has become more important recently to predict their performance and frequency behavior. Accurate prediction and design of winding parasitic parameters of leakage inductance and winding capacitance for high frequency inductors and transformers in switching power supplies is fundamental to improve performance, lower cost, and speed time to market. This thesis presents a methodology and process to obtain accurate prediction of the inter- and intra-winding capacitances of high frequency magnetic components. Application examples considered are a single-winding choke, a coupled inductor filter, and a multi-winding transformer. Analytical approach for determination of parasitic capacitances in high frequency magnetic components will be covered also. Comparison of the FEA results using JMAG with experimental and empirical formula results show good agreement, supporting the method as a model-based design tool with the potential to significantly reduce the design-prototype-test cycle commonly needed with sophisticated magnetic designs.