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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

RF On-Chip Filters Using Q-enhanced LC Filters

Li, Shengyuan 13 July 2005 (has links)
Radio frequency (RF) filters are one of the key building blocks in modern microelectronic digital communication systems that use a narrow frequency band with strong interferers nearby. The objective of this thesis is to explore the better DR performance of RF filters using the Q-enhanced LC filter. It takes a divide-and-conquer method by designing 1. A new simple pseudo-differential pair (PDP) for input gm stage. It is the fastest, high-linearity, low-distortion, and wide-range constant-gm design reported to date. This has been applied in the final filter tape-out and has proven to be effective experimentally. 2. A new tunable discrete inductor (TDL) to achieve two-level inductance with the same real estate that can be used to expand the filtering frequency range. This has been verified experimentally. 3. A new tunable discrete capacitor (TDC) to achieve high linearity over wide terminal voltage swing range. This has been verified through simulation. 4. A new systematic way to achieve synchronized gain, center frequency, and filtering Q tuning capability for Q-enhanced LC filters. It has been verified through simulation. In order to verify the concept, a 900 MHz filter is designed and fabricated with National Semiconductor Company (NSC)'s standard 0.18 um digital epi-substrate CMOS technology, and packaged with NSC's LLP-28. The measurement results show that with filter Q of 17 at 845 MHz, the 1 dB compression point is measured to be +4 dBm, IIP3 to be +16 dBm with a peak noise floor of -154 dB/Hz, spurious free dynamic range (SFDR) to be 71 dB. With filter Q of 70 over a 20 MHz BW, the 1 dB compression point is measured to be -9.5 dBm, IIP3 to be +7 dBm with a peak noise floor of -141 dB/Hz, SFDR to be 57 over 20 MHz BW. This filter uses between 56 and 60 mA with a power supply of 1.8 V due to the low-Q (Q~1) of inductor. It is the RF filter with the highest DR in the published literature. The DR can be even higher if inductor Q can be improved as DR is proportional to Q^2.
2

Caractérisation et modélisation de dispositifs GaN pour la conception de circuits de puissance hyperfréquence

Cutivet Adrien January 2015 (has links)
Résumé: Parmi les technologies du 21e siècle en pleine expansion, la télécommunication sans-fil constitue une dimension fondamentale pour les réseaux mobiles, l’aéronautique, les applications spatiales et les systèmes de positionnement par satellites. Les nouveaux défis à surmonter sont à la fois l’augmentation des distances de transmission associée à l’accroissement des quantités de données véhiculées ainsi que la miniaturisation, la réduction du coût de production, la moindre consommation énergétique et la fiabilité de la solution technologique employée pour la chaîne de transmission. Dans ce sens, l’exploitation de bandes de plus hautes fréquences et la multiplication des canaux de transmission sont activement visées par les travaux de recherches actuels. Les technologies à l’étude reposent sur l’utilisation de systèmes intégrés pour répondre aux considérations de coûts de fabrication et d’encombrement. L’élément de base de ces systèmes, le transistor, établit largement la performance du dispositif final en termes de montée en fréquence, de fiabilité et de consommation. Afin de répondre aux défis présents et futurs, des alternatives à la filière silicium sont clairement envisagées. À ce jour, la filière nitrure de gallium est présentée comme la plus prometteuse pour l’amplification de puissance en bande Ka et W au vu de ses caractéristiques physiques et électriques, des performances atteintes par les prototypes réalisés et des premiers produits commerciaux (off-the-shelf) disponibles. L’exploitation de cette technologie à son plein potentiel s’appuie particulièrement sur la maîtrise des étapes de fabrication, de caractérisation et de modélisation du transistor. Ce travail de thèse a pour objectif le déploiement d’une méthodologie permettant la modélisation semi-physique de transistors fabriqués expérimentalement et démontrant des performances à l’état de l’art. Une partie conséquente de ce travail portera sur la caractérisation thermique du dispositif en fonctionnement ainsi que sur la modélisation d’éléments secondaires (éléments passifs) pour la conception d’un circuit amplificateur hyperfréquence. / Abstract: Amongst the emerging and developing technologies of the 21st century, wireless transmission is a fundamental aspect for mobile networks, aeronautics, spatial applications and global positioning systems. Concerning the associated technological solutions, the new challenges to overcome are both the performance increases in terms of data quantity as well as the associated device features in terms of size, production costs, energetic consumption and reliability. In that sense, the use of higher frequency bandwidths and increase of transmission channels are aimed by various current research works. Investigated technologies are based upon integrated systems to meet the criteria of devices costs and size. As the cornerstone of such devices, the transistor largely accounts for the final system performance in terms of working frequency, reliability and consumption. To respond to the challenges of today and tomorrow challenges, alternatives to the dominant current silicon process are clearly considered. To date, gallium nitride based technology is found to be the most promising for hyperfrequency power amplification for Ka and W bands given the associated physical and electrical characteristics, prototypes performance and first commercial “off-the-shelf” products. Exploitation of this technology to its full potential requires controlling and mastering the involved fabrication, characterization and modeling steps related to the transistor. This work aims at establishing a methodology enabling a semi-physical modeling of experimental transistors which exhibit state-of-the-art performance. A significant part of this work will also focus on thermal characterization of devices under test and on modeling of secondary elements (passive elements) suited for the design of hyperfrequency amplifiers.
3

Transformační návrhová metoda filtrů vycházející z pasivních struktur / Transform-based filter design technique based on passive structures

Venclovský, Martin January 2009 (has links)
This diploma thesis deals with transformation of passive elements in filter structures onto substitutes with new active element CFTA. A basic characteristic, types of filters, their frequency characteristics and a form of transfer functions are listed in an introduction. After it is introduced a development of signal flow graphs, single type of graphs and their modifications. There is specified the method Mason-Coates graphs which proves as optimal for analysis circuits. There are listed rules for a correct evaluation and make-up the graphs. Further are described active elements CFTA, CDTA and a current conveyor. There are defined active substitutes to a floating and grounded inductance, a floating capacitor and also a floating and grounded resistor in this thesis. Here, there are also designed substitutes to parallel combinations of floating passive elements. All substitutes use CFTA as an active element and the grounded capacitor as a passive element of substitute. There are presented forms of M-C graphs, transfer functions and equations for calculation passive elements of substitute at created equivalents. Functionality of designed substitutes is always verified on second order passive filters by the help of a PC simulation. There are tabular listed defined equivalents with corresponding signal graphs, transfer functions and equations for calculation capacitor of substitute are here tabular listed too. In this work there are defined two ways of connecting defined substitutes within the scope of one circuit that can be used as a simple connection or integration bounded elements. In the case of usage of the integration bounded elements it is possible to reduce total number used active elements. The usage defined substitutions are verified by way of both methods on known higher order passive frequency filter structures. Third order low pass filter is here realized and scaled in frequency scope from 100 Hz to 100 MHz.
4

Technologie NG - PON / NG - PON technologies

Balon, Radek January 2013 (has links)
The main object of the master thesis was to familiarize with optical networks, describe the latest current technology of passive optical networks and create a simple simulation of our chosen technology. This thesis was divided into several parts. The first part deals with passive network architecture. I illustrated the basic functional elements which are present in optical networks. I described the active elements and principles of data transmission in the distribution network. To conclude this chapter I described the different standards that are defined for the passive network. In second part I familiarized myself with key parameters and their adverse effect on the transmitted signal. Another part deals with the new technologies that are defined for the next generation of passive network NG-PON. I described the principles of data transmission in these networks and their advantages and disadvantages. The last part deals with creating custom simulations of technology defined by standard NG-PON using OptSim 05.02 Subsequently I have collated all the results of the various technologies and show the advantages and disadvantages of each.
5

Textilní vlnovod / Textile waveguide

Pelikán, Michal January 2017 (has links)
Diploma thesis is focused on manufacturing process of waveguide filter. Thesis is divided to 8 chapters. There is summarized theory of possible execution of waveguide filter, used materials, their influence and risks during production. Then are described possible steps of realization and necessary relations for its design, simulation and also practical realization. At conclusion are summarized, compared and described reached results.
6

Développement de chargeurs intégrés pour véhicules hybrides plug-in / Development of integrated chargers for plug-in hybrid vehicles

Marzouk, Mounir 08 October 2015 (has links)
Ces travaux de thèse consistent en la conception et la réalisation d’une chaîne de tractionintégrée pour véhicule hybride plug-in. L’étude s’oriente vers une solution de convertisseur mutualisé,dans l’objectif de partager la traction et les modes chargeurs de batteries, la structure en NPC à 3niveaux est retenue. Le chargeur monophasé se base une topologie de redresseur à MLI monophaséavec trois bras entrelacés, avec l’utilisation des enroulements du moteur pour le filtrage. En chargeurtriphasé nous adaptons la topologie pour réaliser un montage en double boost triphasé. Pour chaqueconfiguration, les passifs sont dimensionnés pour répondre aux contraintes en courant BF et HF. Lecontrôle adopté se base sur les correcteurs résonants. Enfin, un prototype de 5 kW a été réalisé pourvalider les différents modes de l’application.Dans une seconde partie, nous proposons une solution de chargeur isolé sans étage continu auprimaire à double ponts actifs (DAB). La topologie est modélisée au premier harmonique et unecommande assurant l’absorption sinusoïdale est étudiée. Une configuration isolée triphasée permetl’accès aux puissances plus élevées ainsi que la réduction des ondulations de courant BF en sortie. / This thesis consists on the design and realization of a plug-in hybrid vehicle integrated tractiondrive supply. The work turns to a solution of a mutualized converter, in the objective to imagine asolution which shared drive and battery chargers modes, the three-level NPC topology has beenretained. The single phase charger is based on an interleaved PWM rectifier, and motor windings areused as smoothing inductors. A double-boost PFC configuration is introduced to ensure the threephasecharger. Passives are sized in each configuration in order to take in account the whole currentconstraints (LF and HF). The PFC behavior is based on the resonant controllers. Then, a 5 kWprototype has been realized to validate the different application modes.In a second part, a single-stage isolated charger based on a Dual-Active-Bridge (DAB) isproposed. The topology is modeled to the fundamental and the PFC control law is studied. A threephaseconfiguration is simulated in order to achieve higher charging powers and to reduce batterycurrent low-frequency ripple.

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