Title: Defects limiting charge collection in semiinsulated CdZnTe Author: Vít Zajac Department: Institute of Physics of Charles University Supervisor: doc. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: We achieved to detect photoluminescence transitions deep in the band gap in 4 samples cut from 2 different crystals of semiinsulating Cd1-xZnxTe (x = 0,02 - 0,18) in a row of points along the growth axis. The spectral peaks give evidence of the presence of deep levels in the sample and the intensity of the photoluminescence peaks is to a certain extent proportional to the concentration of these levels. A comparison between resistivity and photoconductivity that were measured by a contact-less method showed that the change of photoluminescence intensity of deep levels does not bring about an unambigous change of neither resistivity nor photoconductivity. Correlation analysis of resistivity and photoconductivity of 6 samples from 4 different crystals confirmed the following model: A shift of the Fermi level within the band gap induced by a change of donor-acceptor compensation is accompanied by an unambigous change of resistivity and results in a change in occupation of the deep levels. This causes a change in the photoconductivity of the crystal because the occupation factor of...

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The feasibility of achieving carrier inversion of a properly doped crystal via optical excitation is studied. This process involves a host substrate doped with deep donors for n-type light characteristic and compensated by a shallow acceptor for p-type characteristic in the dark. This substrate is analyzed using well-known semiconductor equations. In addition conditions which must exist for carrier inversion are also specified. The solutions found are applied to a realistic set of dopants for illustrative purposes as well as indication of feasibility range. This inversion technique may possibly be used to generate bipolar junctions and thus devices. Other forms of photoconductivity are also qualitatively considered to supplement and extend the range of the inversion techniques applications. The processing of circuits using the developed concept offers possible interesting and useful advantages over existing techniques. The motivation for further research thus becomes obvious and is indeed the purpose of the thesis. / Master of Science

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Our major work is to use LabVIEW as the platform to develop the instrument control programs for measuring the optical and electrical properties of semiconductor materials. To measure the optical properties of semiconductor materials, we developed an optical spectroscopy control program. The program can be modified to make it suitable for many kinds of optical spectroscopy systems. Here we use it to measure the transmission spectrum of GaNP bulk material. To measure the electrical properties of semiconductor materials, we developed a program to record the I-V characteristic curve of the device under test. We can use it to check the ohmic property of contact form between metal electrode and semiconductor material. Finally, we developed a program to record the photoconductivity build-up and decay transient curve.

Στην παρούσα ειδική ερευνητική εργασία μελετήθηκε η αγωγιμότητα σκότους και η μεταβατική φωτοαγωγιμότητα στο κενό και στον αέρα δειγμάτων υπό μορφή δισκίων συμπιεσμένης σκόνης διοξειδίου του τιτανίου (με την εμπορική ονομασία Evonik-Degussa (P25)) και δειγμάτων UP25 που προέκυψαν μετά από ανάμιξη σκόνης P25 και ουρίας (urea NH2CONH2) σε αναλογία βάρους 1:1, και τα οποία ψήθηκαν για 1 ώρα στους 450oC. Κατά το ψήσιμο καίγεται η ουρία και τροποποιεί την επιφάνεια του TiO2. Η αγωγιμότητα σκότους του δείγματος UP25 είναι μεγαλύτερη στο κενό από την αντίστοιχη του P25, γεγονός που αποδίδεται στην παρουσία της ουρίας, η οποία εισάγει κενές θέσεις οξυγόνου που δρουν σαν δότες ηλεκτρονίων. Στον αέρα η αγωγιμότητα σκότους του δείγματος UP25 είναι μικρότερη από την αντίστοιχη του P25 και αυτό οφείλεται στην προσρόφηση μορίων οξυγόνου στην επιφάνεια του TiO2, τα οποία δεσμεύουν ηλεκτρόνια και στην παρουσία αζώτου (από την ουρία), το οποίο εμποδίζει την προσρόφηση υγρασίας. Η φωτοαγωγιμότητα στο κενό φθάνει σε υψηλές τιμές και στα δυο δείγματα και εμφανίζεται ιδιαίτερα ευαίσθητη στο περιβάλλον. Η μεταβατική φωτοαγωγιμότητα αυξάνει με αργό ρυθμό στο κενό, φθάνοντας στον κόρο μετά από ημέρες και είναι σημαντικά μεγαλύτερη από αυτήν στον αέρα. Η «αύξηση» και η «μείωση» της φωτοαγωγιμότητας στον αέρα είναι πιο γρήγορη από την αντίστοιχη στο κενό και στα δυο δείγματα λόγω επανασύνδεσης. Στον αέρα η διαδικασία της επανασύνδεσης είναι ιδιαίτερα έντονη στο δείγμα UP25, καθώς η παρουσία του αζώτου μειώνει δραματικά την φωτοαγωγιμότητα λόγω της δημιουργίας μεγάλου αριθμού κέντρων επανασύνδεσης. / In the present master thesis, dark conductivity and transient photoconductivity in vacuum and in air were studied in samples of titania powder P25, which is a commercial product of Evonik-Degussa, and of UP25, prepared by mixing P25 and urea (NH2CONH2) powders in 1:1 weight ratio and consequent calcinations at 450 oC for 1 hour, in the form of pellet. The dark conductivity of UP25 is greater in vacuum than the corresponding one of P25 and this effect is attributed to urea’s presence, which introduces oxygen vacancies, that behave like electron donors. The dark conductivity in air of UP25 is lower than the corresponding one of P25, which is attributed to oxygen molecules adsorption on TiO2’s surface, which act as electron scavenger and nitrogen’s presence (by urea), which prevents water’s absorption. Photoconductivity in vacuum reaches very high values in both samples and is sensitive on the environment. Transient photoconductivity rises slowly in vacuum, saturating in days, and is much larger than that in air. The rise and the decay of the photoconductivity in air are faster than in vacuum for both samples, due to recombination. In air, the recombination process is significant mainly in sample UP25 since the nitrogen presence creates a large amount of recombination centers causing an important decrease of photoconductivity.

of Doctoral Thesis Title: Ultrafast response of electrons in nanostructured and disordered semiconductor systems studied by time-resolved terahertz spectroscopy Author: Vít Zajac Department / Institute: Institute of Physics of the Czech Academy of Sciences Supervisor of the doctoral thesis: doc. RNDr. Petr Kužel, Ph.D., Institute of Physics of the Czech Academy of Sciences Abstract: This thesis deals with charge transport in semiconducting nanomaterials on the picosecond time scale studied by time-resolved terahertz spectroscopy. The problematics of the effective response of composite materials is reviewed and the VBD effective medium model is formulated. The wave equation for the THz probing pulse propagating through inhomogeneously excited percolated and non-percolated semiconducting nanomaterials is solved. This theory is used to investigate charge transport in samples of nanoporous-Si-derived nanocrystals and in epitaxial Si nanocrystal superlattices. The experimental spectra are successfully modeled with the use of Monte Carlo calculations of charge carrier mobility in nanocrystals of corresponding sizes and degrees of percolation within the VBD approximation. It is found that nanocrystals from different regions of the nanocrystal size distribution of the sample dominate the signal in THz and...