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Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.

Thesis (M.S.)--University of Texas at El Paso, 2007. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.

Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.

Thesis (Ph.D.)--University of Western Australia, 2005.

Thesis (Ph. D.)--University of Washington, 2004. / Vita. Includes bibliographical references (p. 170-178).

No description available.

O conhecimento da distribuição espectral da radiação X emitida por unidades de radiodiagnóstico fornece importantes informações, que podem ser aplicadas aos programas de Garantia de Qualidade e de Proteção Radiológica. Detectores que utilizam fotodiodos PIN de Si como ponta de prova vêm sendo utilizados nos últimos anos devido, principalmente, ao seu baixo custo e por trabalharem a temperatura ambiente, não precisando dos tanques de nitrogênio líquido necessários em detectores de Ge e Si(Li). Embora, a princípio, os fotodiodos PIN tenham uma pior resolução, quando comparada com os detectores de Ge, ela é suficientemente boa para a maior parte das aplicações em radiodiagnóstico. Além disso, o desenvolvimento de sistemas refrigerados termoelétricamente e de pré-amplificadores de baixo ruído têm feito com que os fotodiodos PIN cheguem a resoluções comparáveis às do Ge. Este trabalho visa estabelecer as propriedades de detectores constituídos por fotodiodos PIN de Si e desenvolver o processo de correção dos espectros brutos para a eficiência do detector e outros fatores pertinentes, a fim de se obter o espectro real emitido por equipamentos de radiodiagnóstico. Espectros de radiação de equipamentos de radiodiagnóstico obtidos experimentalmente foram comparados com espectros teóricos calculados a partir de um modelo semi-empírico. Além disso, foram obtidos espectros de radiação emitidos por unidades de mamografia, espalhados por um objeto simulador de mama. Como aplicação direta dos espectros medidos experimentalmente, foram desenvolvidas metodologias para a determinação da tensão aceleradora de tubos de Raios X (kVp), para fins de calibração de medidores de kVp, e da camada semi-redutora (CSR) dos feixes de interesse. / Knowledge of the spectral distribution of radiation emitted by radiodiagnostic units provides important information, which can be applied to the Quality Assurance and Radiological Protection programs. Detectors which utilize Silicon PIN Photodiodes have been increasingly used in recent years, due to their low cost and being worked with at room temperature, the liquid nitrogen containers used with Ge and Si(Li) detectors not being necessary. Although, initially, the PIN photodiodes have a poorer energy resolution, as compared with Ge detectors, it\'s good enough for most purposes. Moreover, the development of thermoelectrically cooled systems and low noise level pre-amplifiers have resulted in PIN photodiodes achieving comparable resolutions to Ge ones. This work seeks to establish the properties of detectors made with Silicon PIN photodiodes and to develop the correctional process of the raw specffa both for the efficiency of the detector and other relevant factors, with the aim of obtaining the true spectrum emitted by radiodiagnostic equipment. The radiation spectra of radiodiagnostic equipment experimentally obtained were compared with theoretical spectra calculated from a semi-empirical model. Furthermore, mammography x-ray spectra scattered by a breast simulator were obtained. As a direct application of these experimentally measured spectra, methodologies were developed to determine the peak kilovoltage (kvp) of X-Ray tubes, to be able to calibrate kVp meters, and the half-value layer (HW) of the beams of interest.

Les matériaux semi-conducteurs à base de nitrures disposant de largeur de bande interdite allant de 0,7 à 6 eV, connaissent un intérêt sans cesse croissant pour le développement de dispositifs optoélectroniques du futur. Le but de ces travaux est d’étudier, de concevoir et de développer une photodiode de type PIN à base de matériaux InxGa1-xN et GaN déposés par MOCVD et MBE. Elle est étudiée en considérant différentes configurations de la couche absorbante InGaN, à savoir une couche simple épaisse (SL) ou des puits quantiques (MQW). Toutefois en jouant sur la composition x en indium de la couche InGaN, cela permet la mise au point de différente longueur d'onde d'absorption dans la structure PIN. Des analyses structurales, microstructurales et optiques ont été réalisées par RX, TEM, PL, AFM et MEB pour des photodiodes PIN avec une couche absorbante InGaN de composition en indium variant de 10 à 50%. Nous avons pu vérifier que la qualité du matériau se dégradait lorsque l'on augmentait la teneur en indium et que cela impactait sur les performances de composants. La conception de la structure PIN a été définie pour différentes géométries de photodiode (de 25 à 104 μm²). Des caractérisations statiques et dynamiques de dispositifs fabriquées ont été réalisées afin d'obtenir la réponse de la photodiode. Pour les photodiodes à grande échelle, la valeur de photocourant a atteint un maximum de 3,2 mA démontrant une fréquence de coupure de 940 MHz. La μ-photodiode a révélé 395 μA de photocourant et une fréquence de coupure 1,45 GHz. / III-Nitrides semi-conductor materials with flexible bandgap has revealed a major interest for the future development of optoelectronic devices. The aim of this work is to study, design and develop a PIN photodiode based on InxGa1-xN and GaN materials deposited by MOCVD and MBE. Different configurations are considered for the InGaN absorbent layer: a single layer (SL) and multiple quantum wells (MQW). In order to observe the shift in the absorption wavelength, the composition of the InGaN layer ranges from10 to 50%. Structural, microstructural and optical analysis are performed using XRD, TEM, PL, AFM and SEM. We have verified that the material quality promptly degrades when increasing the indium content which impacts on the device performances. The design of the PIN structure is governed by the limitation of the active surface (from 25 to 104 μm²) in order to limit the global capacitance. Different prototypes are fabricated in clean room before characterization. Static and dynamic characterizations have been realized to qualify the photodiode response. We have investigated the influence of the indium content on the electrical performance. For the large-scale photodiodes, photocurrent value has reached a maximum of 3.2 mA with laser power of 75 mW demonstrating cut-off frequency of 940 MHz. μ-photodiode has revealed 395 μA of maximal photocurrent with cut-off frequency of 1.45 GHz.

This thesis presents consolidated research results of a low-cost, high efficiency, high throughput detection system for fluorescence-based bio-assays. Such high throughput screening process is an invaluable tool for the multifaceted field of Systems Biology, where it is widely used in genomics and proteomics for drug and gene discovery applications. The thesis is divided into three parts: addressing the feasibility of using hydrogenated amorphous silicon photodiodes as the sensor, the development of an associated compact model suitable for circuit-level simulations, and integration of the sensors and switches to realize the array. Requirements of fluorescent bio-assays demand low sensor dark current densities in the order of 10¯¹¹A/cm² at room temperature. Fabrication of high quality segmented a–Si:H n–i–p photodiodes with such specification is achieved by tailoring defects at photodiode junction sidewalls, where both the dry etching and passivation conditions play important roles. Measurements of the fabricated photodiodes at different temperatures allowed the extraction of reverse current components, which are necessary in modeling such sensors in Verilog-A. Two prototype array designs are fabricated with pixel dimensions matching ANSI standard microwell plates. The functionalities of the small arrays are demonstrated with green LEDs to simulate fluorescent dyes that are commonly used in the high throughput bio-assay processes.