The purpose of this research was to develop and test a radiation detector to perform beta dosimetry and spectroscopy. The detector utilizes plastic scintillator volumes to produce scintillation light in proportion to the amount of energy deposited in them, and a large-area avalanche photodiode to convert the light to electrical signals. Pulse processing electronics transform the electrical signals into a format useful for analysis, and various software programs are used to analyze the resulting data. The detector proved capable of measuring dose, as compared to Monte Carlo n-Particle simulations, to within about 50% or better, depending on geometry and source type. Spectroscopy results, in conjunction with MCNP-based spectral enhancement methods, proved the detector capable of recording beta spectra with endpoint energies greater than about 250 keV. The detector shows promise for further development as a portable beta detector for field use in beta-contaminated areas. / Graduation date: 2005

This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the APB (aligned pillar bonding) and MASA (magnetically assisted statistical assembly) technologies. Next, ongoing research on applications of RM3 integration to produce optoelectronic integrated circuits (OEICs) for optical clock distribution, diffuse optical tomography, and smart pixel arrays are described. Finally, potential new applications of these technologies in intra- and interchip optical signal interconnects, in fluorescent dye detection and imaging for biomedical applications, and in III-V mini-IC integration on Si-CMOS for enhancing off-chip drive capabilities are outlined. / Singapore-MIT Alliance (SMA)

A self-consistent, full-band, electrothermal ensemble Monte Carlo device simulation tool has been developed. It is used to study charge transport in bulk GaN, and to design, analyze, and improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) and avalanche photodiodes (APDs). Studies of electron transport in bulk GaN show that both peak electron velocity and saturated electron velocity are higher for transport in the basal plane than along the c-axis. Study of the transient electron velocity also shows a clear transit-time advantage for electron devices exploiting charge transport perpendicular to the c-axis. The Monte Carlo simulator also enables unique studies of transport under the influence of high free carrier densities but with low doping density, which is the mode of transport in AlGaN/GaN HEMTs. Studies of isothermal charge transport in AlGaN/GaN HEMTs operating at high gate bias show a drain current droop with increasing drain-source bias. The cause of the droop is investigated and a design utilizing source- or gate-connected field plate is demonstrated to eliminate the drain current droop. Electrothermal aspects of charge transport in AlGaN/GaN HEMTs are also investigated, and the influence of non-equilibrium acoustic and optical phonons is quantified. The calculated spatial distribution of non-equilibrium phonon population reveals a hot spot in the channel that is localized at low drain-source bias, but expands towards the drain at higher bias, significantly degrading channel mobility. Next, Geiger mode operation of wurtzite GaN-based homojunction APDs is investigated. The influences of dopant profile, active region thickness, and optical absorption profile on single photon detection efficiency (SPDE) are quantified. Simulations of linear mode gain as a function of multiplication region thickness and doping profile reveal that weakly n-type active regions may be exploited to achieve higher avalanche gain, without penalty to either applied bias or active region thickness. A separate absorption and multiplication APD (SAM-APD) utilizing a AlGaN/GaN heterojunction is also investigated. The presence of strong piezo-electric and spontaneous polarization charges at the heterojunction enables favorable electric field profile in the device to reduce dark current, improve excess noise factor, improve quantum efficiency, and improve breakdown probability. To maximize SPDE, a new device structure with a buried absorber is proposed and improved SPDE is demonstrated. Lastly, a new approach for the direct generation of self-sustaining millimeter-wave oscillations is proposed. In contrast to Gunn diodes, which exploit a bulk-like active region, periodic oscillation is achieved in the proposed structures through the creation, propagation and collection of traveling dipole domains supported by fixed polarization charge and the associated two-dimensional electron gas along the plane of a polar heterojunction. Numerical simulation of induced oscillations in a simple triode structure commonly used for AlGaN/GaN HEMTs reveals two distinct modes of self-sustaining millimeter-wave oscillation.

A wide variety of group III-Nitride-based photonic and electronic devices have opened a new era in the field of semiconductor research in the past ten years. The direct and large bandgap nature, intrinsic high carrier mobility, and the capability of forming heterostructures allow them to dominate photonic and electronic device market such as light emitters, photodiodes, or high-speed/high-power electronic devices. Avalanche photodiodes (APDs) based on group III-Nitrides materials are of interest due to potential capabilities for low dark current densities, high sensitivities and high optical gains in the ultraviolet (UV) spectral region. Wide-bandgap GaN-based APDs are excellent candidates for short-wavelength photodetectors because they have the capability for cut-off wavelengths in the UV spectral region (λ < 290 nm). These intrinsically solar-blind UV APDs will not require filters to operate in the solar-blind spectral regime of λ < 290 nm. For the growth of GaN-based heteroepitaxial layers on lattice-mismatched substrates, a high density of defects is usually introduced during the growth; thereby, causing a device failure by premature microplasma, which has been a major issue for GaN-based APDs. The extensive research on epitaxial growth and optimization of Al_x Ga _1-x N (0 ≤ x ≤ 1) grown on low dislocation density native bulk III-N substrates have brought UV APDs into realization. GaN and AlGaN UV <i> p-i-n </i> APDs demonstrated first and record-high true avalanche gain of > 10,000 and 50, respectively. The large stable optical gains are attributed to the improved crystalline quality of epitaxial layers grown on low dislocation density bulk substrates. GaN <i>p-i-n </i> rectifiers have brought much research interest due to its superior physical properties. The AIN-free full-vertical GaN<i> p-i-n </i> rectifiers on<i> n </i>- type 6H-SiC substrates by employing a conducting AIGaN:Si buffer layer provides the advantages of the reduction of sidewall damage from plasma etching and lower forward resistance due to the reduction of current crowding at the bottom<i> n </i> -type layer. The AlGaN:Si nucleation layer was proven to provide excellent electrical properties while also acting as a good buffer role for subsequent GaN growth. The reverse breakdown voltage for a relatively thin 2.5 μm-thick<i> i </i>-region was found to be over -400V.

A new one-dimensional device simulation package developed for the simulation of neutron radiatiol! effects in silicon avalanche photodiodes is described. The software uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. Impact ionisation and illumination are included, allowing accurate simulation with minimal assumptions about the device under investigation. The effect of neutron radiation damage is incorporated via the introduction of deep acceptor levels subject to Shockley-Read-Hall statistics. Two models are presented. A reverse reach through model, based on the EG&G C30626E reverse reach through avalanche photo diode originally proposed for use in the CMS electromagnetic calorimeter, and a reach through model, based on widely available commerical devices. A short experimental study on two commercial silicon avalanche photodiodes, a C30719F reverse reach through APD and a C30916E reach through APD, is presented for comparison with the simulation data. To allow full comparison with the simulated predictions, the commercial devices were irradiated at the Rutherford Appleton Laboratory's ISIS facility. The simulated data shows good qualitative agreement with the measurements performed on the commercial devices, quantitative predictions would require exact information about the doping profile. The characteristic behaviour of the devices is predicted over a wide range of conditions both before and after neutron irradiation. The effect of ionised deep acceptors in the bulk of the devices is investigated. The simulation package provides a useful tool for the analysis of semiconductor devices, particularly in areas where a non-ionising radiation damage is prevelent e.g. high energy physics, and provides a good basis for further development.

No description available.

[Truncated abstract] HgCdTe is the leading semiconductor material for the fabrication of high performance infrared photon detectors, in particular, for detection of radiation beyond the near infrared. State-of-the-art infrared detection and imaging systems are currently based around high density focal plane arrays consisting of HgCdTe photodiodes as detector elements. Despite the high performance of HgCdTe infrared detectors, and the many benefits they can offer to industry and society, their utilisation remains limited due to the high cost of production. The chemical composition and narrow bandgap of the HgCdTe material used for infrared detection means that the material is inherently very susceptible to defect formation caused by the processing procedures required for device fabrication. Consequently, fabrication of HgCdTe photodiode arrays have traditionally been characterised by low yields and high costs for arrays that meet required operability specifications. In this thesis a new photodiode fabrication technology with the potential to improve device yields over traditional fabrication technologies is presented. This new fabrication technology is distinguished from others by the use of plasma-induced p-to-n type conversion of HgCdTe for junction formation. This allows great simplification of the fabrication process and avoids high temperature processing during and after junction formation, and keeps the junction protected from the atmosphere at all stages of fabrication. The development of the photodiode fabrication technology using plasma-induced junction formation has involved characterising the electrical transport properties of the type-converted layers, fabrication and characterisation of photodiodes, and photodiode dark current modelling

Thesis (Ph. D.)--Auburn University, 2008. / Abstract. Vita. Includes bibliographical references (p. 177-194).

Die vorliegende Arbeit befasst sich mit der Untersuchung von Metall-Halbleiter-Metall ultravioletten Photodioden basierend auf Dünnschichten der weitbandlückigen Halbleitern Magnesiumzinkoxid (Mg,Zn)O und Galliumindiumoxid (In,Ga)2O3. Die Arbeit behandelt zwei inhaltliche Schwerpunkte. Der erste Schwerpunkt liegt auf Herstellung, Entwicklung und Charakterisierung der wellenlängenselektiven (Mg,Zn)O-Photodioden bei Erhaltung der Wurtzitstruktur in UVA und UVB Spektralbereichen. Dabei wurde eine integrierte optische Filterschicht mit einem höheren Mg-Gehalt verwendet, die einen Teil der von der Rückseite einfallende Strahlung absorbieren kann. Um die Selektivität der Absorptionskante und die Bandbreite des Detektoren abzustimmen, wurden unterschiedliche Kombinationen der Mg-Gehalte in den Schichten untersucht. Weiterhin wurde der Ansatz eines kontinuierlichen Kompositionsgradienten mittels großflächig gepulster Laserabscheidung genutzt, um monolithisch mehrkanalig schmalbandige Photodioden zu realisieren. Dadurch konnten die kontinuierliche Verschiebung der Absorptionskante von beiden Activ- und Filterschichten sowie die Photodetektion mit minimierter und einheitlicher spektraler Auflösung innerhalb von einem 2 inch im Durchmesser Wafer ermöglicht werden. Der zweite Schwerpunkt konzentriert sich auf die Untersuchung der wellenlängenselektiven Photodioden basierend auf Si-dotierten (In,Ga)2O3 Dünnschichten mittels der kontinuierlichen Kompositionsgradienten durch unterschiedliche Variation des Indium-Gehaltes. Die Absorptionskante der (In,Ga)2O3 Dünnschichten konnte von UVA bis zum UVC Spektralbereich abgestimmt werden. Die chemische und strukturelle Eigenschaften der Dünnschichten wurden mittels Kathodolumineszenzmikroskop, energiedispersive Röntgenspektroskopie and Röntgenbeugung studiert. Die elektrischen Eigenschaften der Schottky-Kontakte wurden mit hochpräzisen Strom-Spannungs-Messung bestimmt. Die Untersuchung der Absorptionskante sowie der Effzienz der Photodioden geschieht mittels spektralaufgelöster Photostrommessungen.

The overall goal of this thesis is the development of wearable flexible optical imaging systems (We-FOISs) that can be used for diffuse optical spectroscopy (DOS) and tomography (DOT). The advantages of We-FOISs lie in their low-cost, portability, and simple patient-interface compared to current DOS and DOT systems. A flexible form factor provides conformal attachment even in cases where the targets such as fingers and toes have a strongly curved surface. We-FOIS technology is a scalable and expandable. Each system can be designed with multiple pairs of light sources and photodetectors depending on the needs and size of the target. The We-FOISs presented in this thesis were developed based on a modular design. The two main modules are a sensing unit and a control unit (a.k.a. sensing band and control band). Two different types of sensing units have been developed. The first type is based on inorganic optoelectronic components such as light emitting diode (LED) and silicon-photodiode (Si-PD). The second type is made with organic components such as organic light emitting diodes (OLEDs), quantum-dot light emitting diodes (QD-LED), and organic photodiodes (OPDs). The flexible control units operate the light sources, read the intensity of the light transmitted through biological tissue, and send data to the computer. Depending on the number of pairs of light sources and photodiodes placed on the flexible sensing bands, the control units have different designs. Furthermore, a small integrating sphere system (SISS) was developed to measure the optical properties (absorption and scattering coefficients, μa and μs) of biological tissue samples and tissue-mimicking phantoms, which were to be used to calibrate the We-FOISs. The accuracy of the SISS as a function of the sample thickness was investigated by comparing a widely used inverse-adding-doubling (IAD) program and inverse-Monte-Carlo (IMC) simulations. Finally, the performance of the different We-FOISs were tested in various pre-clinical and clinical applications, including epilepsy monitoring in rat brains, monitoring of peripheral artery disease (PAD) in human feet, diagnosing systemic lupus erythematosus (SLE) in human fingers, and characterizing tumors in breast cancer patients. The results demonstrated the potentials of the We-FOISs for monitoring of symptoms of various diseases and for applications in point of care.