The thesis investigates hot carrier relaxation and carrier recombination mechanism of a InN thin film grown on LAO(LiAlO2) substrate with a ultrafast time-resolved photoluminescence apparatus. Carriers were excited with laser pulses of energy 1.5 eV and of pulsewidth 150 fs from a Ti:sapphire laser. The photoexcited carriers relax excessive energy mostly within 10 ps thorough carrier-LO-phonon interaction. The effective carrier-LO-phonon emission times were estimated 197 to 58 fs in the temperature range from 250 to 35 K. The Shockley-Read-Hall coefficient was found around 0.8 ns-1. The Auger recombination was trivial at 35 K and become significant at 250 K. The fitted radiative recombination was much smaller than the theoretical estimate. Both effective carrier-LO-phonon scattering times and the radiative and nonradiative decay rates of the studied m-plane InN were found to be smaller than those of c-plane InN in other reports.

This experiment use NaCl (001) single crystal as substrate, and the target is zinc oxide, to generate a-plane (112 ¡Â0) zinc oxide nanothim. The nanofilm is used as a buffer layer generating by Ion Beam Sputtering, and then increasing the thickness by Plasma sputtering. Part of specimens to proceed atmospheric heat treatment with different temperature and time, and part of specimens to change the ratio of the gas when the thin film is growth, then use of Transmission electron microscopy (TEM) and Photoluminescence (PL) as the analysis of film properties. The results of experiment, show that (112 ¡Â0) plane have more stringent conditions when generate of thin film, and easy to become the ring of electron diffraction with no-epitaxy .But finally we get a data what can generate a well a-plane ZnO thin film, the substrate temperature of 400 ¢X C, the sputtering time of 1 hour, Ar/O2 = 1.5. From the results of Photoluminescence, we find that there are zinc vacancies in ZnO thin film, probably there are too many oxygen atoms. While the heat treatment in nitrogen, zinc vacancies are reduced rapidly. Indicating that oxygen atoms within the film are reduced by nitrogen atoms or replace the position of the oxygen atoms.

In this thesis, we study a series of Si-doped GaN thin films and nanodots. These samples are growth on c-face sapphire substrate by Molecular Beam Epitaxy. In Si-doped GaN thin film growth, different Si cell temperature are used to control the dopant concentration. Van der Pauw hall measurement is used to measure the carrier concentrations and the mobilities. As increase Si cell temperature, the carrier concentration and the mobility increase. The maximum carrier concentration is 8 ¡Ñ 1019 cm-3, and the maximum mobility is 194 cm2/V-s. As increasing the Si dopant concentration, the near band edge photoluminescence emission peak intensity increases, but the full width at half maximum broaden from 47 meV to 117 meV. In Raman measurement result, with the increasing of Si dopant concentration, the E2(high) mode shifts from 569.4 cm-1 to 567.9 cm-1. The A1(LO) mode disappears gradually. In the nanodot growth, the AFM images show that the nanodots size become large as increasing the growth time. The nanodots size is change from 1.2 nm to 5.6 nm high and 40 nm to 110 nm wide, but the density of the nanodots decreases from 1.9 ¡Ñ 1010 cm-2 to 6 ¡Ñ 109 cm-2 at 15 sec and 90 sec growth, respectively. According to the AFM image of the nanodots surface morphology, the nanodots growth mode should be the Stranski-Krastanow mode.

In this study, the reactive rf magnetron sputtering was used to deposit zinc oxide (ZnO) thin films on Si substrate. The optimal sputtering parameters for film as luminescence application were found to be oxygen concentration (O2/O2+Ar) of 21%, RF power of 100W, substrate temperature of 500¢XC and sputtering pressure of 5 mtorr. Beside, the thermal treatment procedure was carried out to improve the luminescence characteristics of ZnO thin films. The physical characteristics of ZnO thin films deposited on Si substrate with different sputtering parameters were obtained by the analyses of XRD and SEM. The optical properties of ZnO thin films were discussed also. Ultraviolet (UV) visible spectrometer and photoluminescence spectrometer were used to measure the visible transmission and photoluminescence characteristics (PL), respectively. According to the experimental results, it is found that under optimal sputtering parameters, the emitted UV light intensity will be increased as the FWHM in x-ray diffraction is decreased, i.e. the grain size is larger. In addition, after post-deposition annealing at 800¢J, the strongest UV emission intensity was obtained in the nitrogen ambient and the strongest visible (green) emission intensity was obtained in the oxygen ambient.

Abstract We have extended the spectral range of the current PL-upconversion apparatus to be operated in infrared. Using the IRPL-upconversion¡Awe study the behavior of carrier cooling of InN film and the relationship between the spacer and lifetime in InAs/GaAs stacked QDs . We excited InN film of the band gap of 0.74eV with ultrafast Ti:sapphire laser of the wavelength 404nm. We found the phonon emission time by hot carriers of InN is 14fs. The hot carriers release their excess energy to the lattice of 35K with a timescale of 100ps. We observed in InAs/GaAs QDs that the shorter life time for samples with thin spacer is due to tunneling effect.

In this study, the reactive rf magnetron sputtering was used to deposit zinc oxide (ZnO) thin films on SiO2/Si substrate at room temperature. The thermal treatment procedure was carried out to improve the luminescence characteristics of ZnO thin films. The physical characteristics of ZnO thin films with different post annealing process were obtained by the analyses of XRD and SEM. The electron spectroscopy for chemical analysis (ESCA) was used to analyze the chemical states of ZnO thin films. In optical properties, the photoluminescence spectrometer was used to measure the photoluminescence characteristics (PL). According to the results of experiments, the chemical states of ZnO thin films were changed after different post annealing. The photoluminescence characteristics were obtained at different wavelength, and the results indicated that they were affected by the chemical states of ZnO thin films. With 900¢J annealing, the strongest green emission and UV emission intensity can be obtained under the air ambient and the oxygen ambient, respectively. The reason was due to the variation of the proportion of oxygen vacancies and O-Zn bond within the ZnO thin films.

ABSTRACT Organic light emitting diode (OLED) has significant scientific implication and technological potential. Using organic materials for tailored emitting color, threshold voltage reduction, and emission efficiency gain are the key points for the commercialization of OLED. An UV-Vis spectrophotometer was applied to obtain the absorption spectra of PVK, C6, and PRL, as well as their respective band gap (Eg) values of 3.49 eV, 2.32 eV, and 2.55 eV. The turn-on oxidation potential of cyclic voltammograms was reduced for HOMO energy at 5.64 eV, 5.21 eV, and 5.16 eV, respectively. The Eg subtracted from HOMO energy yielded the respective LUMO values of 2.15 eV, 2.89 eV and 2.61 eV. Excitation at 457 nm or 325 nm was applied to the freestanding films of PVK, PVK doped with C6 (10/1), and PVK doped with PRL (10/1). From the UV-Vis absorption spectra and Egs, we knew that 457 nm excitation did not generate photoluminescence (PL) of PVK. The PL spectra of the doped freestanding films were mostly attributed to the dye molecules of C6 or PRL. The PL spectra of doped freestanding films were insensitive to the excitation sources at 325 nm and 457 nm. There was a blue shift at the PL emission peak indicative of energy transfer from PVK to C6 or PRL for the doped films. Using spin-coating or vacuum deposition to fabricate PVK, C6, and PRL films onto an ITO substrate followed by evaporating Al (Ag) as the electron injector to form OLED devices. Because of the energy transfer between PVK and C6 or PRL, ITO/PVK:C6/Al homojunction OLED showed a smaller threshold voltage than that of ITO/C6/Al, from 9 V to 3.5 V. Likewise, ITO/PVK:PRL/Al homojunction OLED had a smaller threshold voltage than that of ITO/PRL/Al, from 8 V to 4.5 V. PVK was also used as the hole blocking layer to construct heterojunction OLED to balance electron-hole numbers in the emitting layer. The threshold voltage of ITO/C6/Al reduced from 9 V to 7 V with a heterojunction of ITO/PVK/C6/Al. A device of ITO/PRL/Al having a threshold voltage of 8V reduced to 6V with an ITO/PVK/PRL/Al heterojunction OLED. Coating a protective layer (Ag) on the metallic electron injector, or packaging the device in N2 could both decrease the decay and increase the life time of OLED.

Nous rapportons une étude des effets induits par les micro-ondes sur un GE2D de haute mobilité au moyen de mesures de magnéto-photoluminescence (PL). Nous montrons que pour des fréquences micro-ondes élevées, l'unique absorption résonante est attribuée à la résonance cyclotron électronique, mais que pour des gammes de fréquences plus faibles, des pics d'absorption supplémentaires apparaissent et rendent la compréhension des effets induits plus complexe. Le sondage des propriétés des GE2D en champ magnétique sous irradiation micro-ondes, permet de connaître la distribution en énergie des porteurs de charge et de mettre en évidence les fortes augmentations de la température électronique mais également de celle des trous. Nous montrons que les micro-ondes contribuent à une modification de la fonction de distribution électronique,<br />à l'apparition d'absorptions secondaires comme l'harmonique de la résonance cyclotron, mais aussi à très faible énergie micro-ondes, à l'existence de magnéto-plasmons. Finalement, nous discutons la contribution de l'ensemble des effets observés sur le phénomène des MIROs.

Thèse de doctorat : Sciences et ingénierie des matériaux : Vandoeuvre-les-Nancy, INPL : 2005. / Titre provenant de l'écran-titre. Bibliogr.

Thèse doctorat : Chimie Organique : Strasbourg 1 : 2007. / Titre provenant de l'écran-titre. Bibliogr. p. 255-273.