Zinc oxide (ZnO) has higher exiton binding energy (60 meV) and high band gap (~3.4 eV) that can provide efficient ultraviolet (UV) light at room temperature (RT). The easily etched in acids and alkalis that provides the fabrication of small-size ZnO-based devices. Electrodeposition is the growth method that can deposit high quality film and modify the characterizations of film by changing its deposition electrolyte concentration, temperature, and current density. Firstly, the ZnO is deposited on n-type Si substrate by electrodeposition by different deposited temperature, electrolyte concentration, and current density. The deposited films contain zinc nitrate, metal Zn, and ZnO while electrodeposited at various deposition parameters. For the deposited film contains only ZnO, no UV light is found measured by macroscopic photoluminescent analysis even annealed at different ambient and temperature. According to previous papers, an ideal UV light intensity can be obtained by thermal treated metal Zn or Zn ion implantation into oxide materials after annealing. Annealing the Zn-ZnO structure formed in 30oC by electrodeposition can observe intense UV light. This method improves the disadvantages of insufficient light intensity and no UV light observation from conventionally electrodeposited ZnO. The variation of UV light wavelength of ZnO oxidized from metal Zn is associated with the quantum-confinement effect that was discussed by previous papers. It is found that the size of ZnO is not small enough to realize the quantum-confinement effect, herein, we suggest that the variation of UV light wavelength is affected by the metal Zn resides in ZnO. Otherwise, the electrodeposition of ZnO is not easily performed on p-type substrate, an aluminum film on the back side of p-type Si can deposit ZnO by smaller potential, and different ZnO nanostructures are obtained by modifying the current density. Recently, different characteristics were found in nano-size noble metal crystals. In this thesis, the porous structure of Au-ZnO and Pt-ZnO were co-deposited by electrodeposition to enhance the photocatalytic activity. Si is the dominant material in semiconductor technology, but its indirect band gap property makes it not allowed in optoelectronics application. However, since 1990, the visible light is observed from porous Si fabricated by electrochemically etching of Si; though the light mechanism of porous Si is not clear, it can be divided into two parts, the quantum-confinement effect of Si nanocrystals and surface states on porous Si. Porous Si emits efficient visible light, but its light wavelength is readily influence by environment. We developed three methods, electrochemically etching the pre-treated Si substrate, adding chemical solution into electrolyte during etching process, and post-treatment of Si substrate after etching to prevent the emission of porous Si from being affected by environment.

Nanopore covered microporous silicon interfaces have been formed via an electrochemical etch for gas sensor applications. Rapid reversible and sensitive gas sensors have been fabricated. Both top-down and bottom-up approaches are utilized in the process. A nano-pore coated micro-porous silicon surface is modified selectively for sub-ppm detection of NH3, PH3, NO, H2S, SO2. The selective depositions include electrolessly generated SnO2, CuxO, AuxO, NiO, and nanoparticles such as TiO2, MgO doped TiO2, Al2O3, and ZrO2. Flow dynamics are analyzed via numerical simulations and response data. A general coating selection method for chemical sensors is established via an extrapolation on the inverse of the Hard-Soft Acid-Base concept.

The use of nanotechnology to develop methods for fabrication and characterization of organized hybrid nanostructures that include integrated polymeric, biological and inorganic compounds has increased exponentially during the last decade. Such bio-nano-composite materials could be used in solving current biomedical problems spanning from nanomedicine to tissue engineering and biosensing. In this dissertation, a systematic study has been carried out on the synthesis, characterization, of two interfaces between naturally derived and synthetic nanostructures. Carbon nanotubes and porous silicon represent the synthetic nanostructures that were developed for the purpose of interfacing with the naturally derived bovine type I collagen and respiratory syncytial virus DNA respectively. Firstly, the synthesis of collagen-carbon nanotubes by two different techniques: fibrillogenesis through slow wet fiber drawing (gelation process) and electrospinning has been highlighted. Characterization of the novel nanocomposite was conducted using electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, nanoindentation, and Raman spectroscopy. The collagen-carbon nanotube gelation process was found to have superior nanoscale surface mechanical properties that were more conducive to higher osteoblast specific protein expression such as osteocalcin. Applications of the developed nanofibers are detailed in the fields of orthopaedics and tissue engineering. Secondly, an overview of porous silicon synthesized by hydrofluoric acid is presented. A parametric study was performed to determine the optimal pore size was carried out. The use of porous silicon as a biosensor to detect RSV virus by DNA hybridization was then provided and the importance of the interface chemistry was highlighted.

Fluoride based chemical systems are widely used at various stages in microelectronic processing, particularly for wet cleaning and etching applications. Some examples include the use of semi aqueous fluoride (SAF) solutions in back end of line cleaning, the use of dilute HF solutions as etchants for SiO2 and HF-HNO3 or HF-H2O2 solutions as isotropic etchants for silicon. In this work, the use of fluoride based solutions for two applications relevant to semiconductor processing are considered.In the first part of the study, cleaning of post plasma etch residues generated during fabrication of copper damascene structures was investigated in semi aqueous fluoride (SAF) formulations based on dimethyl sulfoxide and ammonium fluoride. Formulations designed for residue removal should be able to remove the residue effectively, without causing critical dimension loss during the process cycle. A systematic evaluation of solution variables (solvent content and pH) was conducted and the extent of removal of model copper oxide films and selectivity over copper and carbon doped oxide (CDO) films were used as metrics to evaluate the formulations. Results of the study indicate that the presence of solvent is necessary to achieve reasonable etch selectivity over dielectric films. Additionally, a removal end point detection technique based on electrochemical impedance spectroscopy was developed, which could potentially help in the optimization of cleaning time with minimal dielectric loss. This method was applied to monitor the removal of copper oxide films as well as residue from patterned test structures.In the second part of the study, electrochemical formation of porous silicon films in hydrofluoric acid (HF) solutions was investigated, for potential applications in advanced packaging. Specifically, porous silicon formation in solution mixtures containing HF, acetic acid and peroxide, was studied. The effect of variables including current density, substrate resistivity, HF, acetic acid and peroxide concentration, on key porous film characteristics such as growth rate, porosity and microstructure, was explored. Addition of peroxide was found to significantly increase the porosity and growth rate of the film, as a result of enhanced chemical dissolution and films with porosities as high as 95% were obtained. Additionally, in solutions containing peroxide, a variety of microstructural features, such as nanopores, micron sized pores, truncated pyramidal structures and silicon needles were observed, under various fabrication conditions.

No description available.

Just after discovery of porous silicon (PSi) there was clarified that its wide application in various fields opens new unexpected possibilities. One of the possibilities of products of porous silicon in microwave (MW) technique is carried out in the USA now. The propagation of MWs in PSi layers is under investigation. It has been shown that radio and optoelectronic connectors made from this material have low losses and can be applied to improve technique of cellular phone communication as well as other high frequency technique. It is obvious that the next element following the connector has to be the sensor of microwave radiation. The most practicable way would be to use porous silicon in the production of it. There are known MW detectors of crystal silicon for operating under the effects of hot charge carriers. Sensitivity of the sensors usually depends on the dimensions of separate parts of it. In general, sensitivity increases while reducing the mentioned above dimensions. The technology of porous silicon presents the advantage since the specific dimensions of PSi stem could be reduced up to the nanometre sizes. After having introduced PSi technology in production of sensors which require certain diminutive dimensions, it is possible to expect significant increase of the sensitivity of such sensors. Additional advantages are expected to be achieved from the quantum confinement effect. To realize promises of application of PSi in MW technique it is of relevance to... [to full text] / Atradus akytąjį silicį (ASi) paaiškėjo, kad daugelyje sričių jo panaudojimas atveria naujas netikėtas galimybes. Viena galimybių panaudoti akytojo silicio gaminius mikrobangų technikoje tiriama JAV. Tiriamas mikrobangų sklidimas ASi sluoksniuose. Parodyta, kad radijo- ir optoelektroninės jungtys iš šios medžiagos yra mažų nuostolių ir tinka panaudojimui tobulinant mobilaus ryšio ir kitą superaukštų dažnių techniką. Sekantis po jungties elementas turėtų būti superaukšto dažnio spinduliuotės jutiklis. Patogiausiai būtų jį gaminti iš tos pačios medžiagos – akytojo silicio. Yra žinomi kristalinio silicio mikrobangų spinduliuotės detektoriai, kurių fizinis veikimo pagrindas – karštųjų krūvininkų efektai. Jutiklių jautris priklauso nuo tam tikrų jo dalių matmenų. Jautris didėja mažinant minėtus matmenis. Akytojo silicio technologija suteikia tą privalumą, kad ją pritaikius ASi kamieno charakteringieji matmenys gali būti sumažinami iki nanometrų dydžio. Pritaikius ASi gamybos technologiją jutikliuose, kuriuose pageidaujama kaip galima mažesnių tam tikrų matmenų, galima tikėtis žymiai padidinti tokių jutiklių jautrį. Papildomų privalumų galima laukti ir iš pasireiškiančio ASi erdvinio kvantinio ribojimo (pagavimo) efekto. Tam, kad galima būtų spręsti apie ASi darinių panaudojimo superaukšto dažnio (SAD) technikoje perspektyvą, aktualu ištirti ASi sluoksnių ir darinių fizines savybes, veikiant juos SAD spinduliuotės lauku. Nei superaukšto dažnio spinduliuotės poveikis ASi savybėms... [toliau žr. visą tekstą]

Atradus akytąjį silicį (ASi) paaiškėjo, kad daugelyje sričių jo panaudojimas atveria naujas netikėtas galimybes. Viena galimybių panaudoti akytojo silicio gaminius mikrobangų technikoje tiriama JAV. Tiriamas mikrobangų sklidimas ASi sluoksniuose. Parodyta, kad radijo- ir optoelektroninės jungtys iš šios medžiagos yra mažų nuostolių ir tinka panaudojimui tobulinant mobilaus ryšio ir kitą superaukštų dažnių techniką. Sekantis po jungties elementas turėtų būti superaukšto dažnio spinduliuotės jutiklis. Patogiausiai būtų jį gaminti iš tos pačios medžiagos – akytojo silicio. Yra žinomi kristalinio silicio mikrobangų spinduliuotės detektoriai, kurių fizinis veikimo pagrindas – karštųjų krūvininkų efektai. Jutiklių jautris priklauso nuo tam tikrų jo dalių matmenų. Jautris didėja mažinant minėtus matmenis. Akytojo silicio technologija suteikia tą privalumą, kad ją pritaikius ASi kamieno charakteringieji matmenys gali būti sumažinami iki nanometrų dydžio. Pritaikius ASi gamybos technologiją jutikliuose, kuriuose pageidaujama kaip galima mažesnių tam tikrų matmenų, galima tikėtis žymiai padidinti tokių jutiklių jautrį. Papildomų privalumų galima laukti ir iš pasireiškiančio ASi erdvinio kvantinio ribojimo (pagavimo) efekto. Tam, kad galima būtų spręsti apie ASi darinių panaudojimo superaukšto dažnio (SAD) technikoje perspektyvą, aktualu ištirti ASi sluoksnių ir darinių fizines savybes, veikiant juos SAD spinduliuotės lauku. Nei superaukšto dažnio spinduliuotės poveikis ASi savybėms... [toliau žr. visą tekstą] / Just after discovery of porous silicon (PSi) there was clarified that its wide application in various fields opens new unexpected possibilities. One of the possibilities of products of porous silicon in microwave (MW) technique is carried out in the USA now. The propagation of MWs in PSi layers is under investigation. It has been shown that radio and optoelectronic connectors made from this material have low losses and can be applied to improve technique of cellular phone communication as well as other high frequency technique. It is obvious that the next element following the connector has to be the sensor of microwave radiation. The most practicable way would be to use porous silicon in the production of it. There are known MW detectors of crystal silicon for operating under the effects of hot charge carriers. Sensitivity of the sensors usually depends on the dimensions of separate parts of it. In general, sensitivity increases while reducing the mentioned above dimensions. The technology of porous silicon presents the advantage since the specific dimensions of PSi stem could be reduced up to the nanometre sizes. After having introduced PSi technology in production of sensors which require certain diminutive dimensions, it is possible to expect significant increase of the sensitivity of such sensors. Additional advantages are expected to be achieved from the quantum confinement effect. To realize promises of application of PSi in MW technique it is of relevance to... [to full text]

This thesis focuses on surface science and bioengineering investigations, first for the development of an improved biomaterial for orthopaedic implant applications, and second, for the development of a biosensor device for biomedical diagnostics. A key component considered in this thesis was the covalent linkage of proteins to the material’s surface for retaining the protein’s immunological and biological activities and for generating a functional interface. Part 1 of this thesis investigated surface modification procedures for improving the bioactivity of titanium substrates. Titanium is first coated with a bioactive silica film grown by plasma enhanced chemical vapour deposition (PECVD), referred to as PECVD-Si-Ti. In previous studies, the bone-implant integration process was enhanced 1.6-fold for titanium implants coated with PECVD-Si films compared to uncoated titanium implants in vivo. However, in vitro studies carried out in this thesis showed that the growth of MG63 osteoblast-like cells was 7-fold higher on uncoated titanium compared to PECVD-Si coated titanium. Therefore, to improve cell growth on the surface and, by inference, the integration of PECVD-Si-Ti implants into bone tissue, the implant’s surface was functionalised with a mitogenic factor, insulin-like growth factor-1 (IGF-1). This was accomplished by modifying the PECVD-Si-Ti surface with an alkoxysilane, 3-isocyanatopropyl triethoxysilane (IPTES), and then by covalent bioconjugation of IGF-1 through isocyanate-amino chemistry. After 72 h of in vitro cell culture in serum-free medium, the growth of MG63 cells was enhanced 1.9-fold on IPTES functionalised PECVD-Si-Ti, which was loaded with covalently immobilised IGF-1 compared to IPTES functionalised PECVD-Si-Ti without IGF-1 (isocyanate reactive groups were quenched with ethanolamine hydrochloride). The attachment and adhesion of MG63 cells were also enhanced on PECVD-Si-Ti by the covalently immobilised IGF-1 in serum-free cell culture conditions. Therefore, the bioactivity of PECVD-Si-Ti was improved by covalently linking IGF-1 to the substrate surface through isocyanate-amino chemistry. Part 2 of this thesis involved the development of a new optical interferometric biosensor. The biosensor platform was constructed from electrochemically-prepared thin films of porous silicon that acted as a sensing matrix and transducer element. By reflective interferometry using white light, an enzyme-catalysed reaction was discovered (horseradish peroxidase (HRP) mediated oxidation of 3,3’,5,5’-tetramethylbenzidine (TMB)), which led to an acceleration in the rate of porous silicon corrosion and represented the biosensor’s readout signal. We discovered that another substrate, which is also oxidised by HRP, OPD, produces an even more pronounced readout signal. The HRP-OPD system was used in an immunoassay for detecting human IgG from an Intragam solution. An important part in the design of the biosensor was the surface functionalisation approach where anti-human IgG, referred to as the capture antibody, is immobilised on the porous silicon surface. The readout signal (produced from the capture of human IgG) was enhanced 4-fold on the porous silicon biosensing platform functionalised with covalently linked anti-human IgG through isocyanate-amino chemistry compared to the porous silicon biosensing platform functionalised with adsorbed anti-human IgG. The optimised biosensor was used to detect IgG from a total human protein concentration of Intragam to a sensitivity of 100 ng/ml. In summary, isocyanate-amino bioconjugate chemistry was used to covalently link either IGF-1 to PECVD-Si-Ti for improving the biological activity of the orthopaedic implant and to covalently link IgG to porous silicon for developing a sensitive biosensor for the detection of proteins. This surface chemistry approach is very useful for biomaterial and biosensing applications.

Thesis (Ph.D.)--Flinders University, School of Chemistry, Physics and Earth Sciences. / Typescript bound. Includes bibliographical references. Also available online.

Thesis (Ph. D.)--University of Missouri-Columbia, 1996. / Typescript. Vita. Includes bibliographical references (leaves 138-143). Also available on the Internet.