Novel logic and memory device concepts are proposed and analyzed. For the latter purpose the commercial technology computer aided design (TCAD) simulators Taurus and Sentaurus Device by Synopsys are used. These simulators allow ready definition of complex device geometries. Moreover, while not all device physics models are state-of-the-art, the wide variety of device physics considered is advantageous here when not all of the critical device physics is known a priori. The initial device concept analyzed was a one transistor (1T), one capacitor (1C) – pseudo-static random access memory (SRAM). Simulations indicate that tri-gate pass-transistors will offer better gate control and reduced leakage, and tri-gate capacitors will offer increased capacitance, making the overall device performance comparable to SRAM. The second device analyzed was a quantum dot non-volatile memory. In principle, such memories become more reliable for a given tunnel oxide thickness by localizing any leaks to individual dots. However, simulations illustrate limits on dot packing density to retain this advantage due to inter-dot tunneling. The final device, proposed and extensively analyzed here, is a novel tunnel field-effect transistor (TFET), the “hetero-barrier TFET” (HetTFET). In complementary metal-oxide-semiconductor (CMOS) logic, while switching power decreases with voltages, standby power increases due to thermionic emission of charge carriers over the source-to-channel barrier in the constituent metal-oxide-semiconductor field-effect transistors (MOSFETs). As a result, CMOS voltage and, thus, power scaling is approaching an impasse. Because TFETs are not subject to thermionic emission, they are being considering as a replacement for MOSFETs. Various materials systems and device geometries have been considered. However, even in simulation, balancing switching and standby power at low voltages while still providing sufficient transconductance for rapid switching has not proven straightforward. HetTFETs are intended to achieve high on-to-off current ratios via a threshold defined by the onset of band overlap, and high ON-state transconductances via tunneling through thin barriers defined by crystal growth, rather than relying on gate-controlled barrier narrowing in whole or part for either purpose as with other designs. Simulations of n and p-channel HetTFETs suggest the possibility of current CMOS-like performance at much lower voltages. / text

If solar energy is to be a significant component of our energy supply, technologies are required which produce high efficiency solar cells using inexpensive materials and versatile manufacturing processes. Solution-processed materials have been used to create low cost, easily fabricated devices, but have suffered from low power conversion efficiencies. A lack of infrared energy capture limits their efficiency. In this work we develop solution-processed photovoltaic devices using lead sulphide quantum dots and high surface area porous oxide electrodes. The resultant devices have a spectral response from 400 to 1800 nm. In fabricating these devices we utilize crosslinking molecules. We explore the impact crosslinkers have on the mobility and morphology of quantum dot films using field effect transistors and transmission electron microscopy. We also explore a hybrid organic/inorganic route for controlling the net doping in quantum dot films. We investigate the chemical and compositional changes that lead sulphide quantum dots films undergo during crosslinker treatment and annealing. Using this information we optimize our charge separation efficiency and our open circuit voltage. The resulting devices have an infrared power conversion efficiency of 2%, four orders of magnitude higher than that in previously reported lead sulphide quantum dot devices.

Silicon-based lighting show promise for display and solid state lighting use. Here we demonstrate a novel thin film light emitting diode device using nanocrystalline silicon quantum dots as an emission layer, and metal oxides as charge transport layers. Sputtering deposition conditions for the nickel and zinc oxides were explored in order to balance deposition rate with minimal roughness, optical absorption, and electrical resistivity. Devices displaying characteristic diode current-voltage behavior were routinely produced, although most showed significant reverse saturation current due to the presence of shunts. Current-voltage behavior of devices made in the same batch showed high repeatability, however variations in device performance was observed between batches while the parameters of synthesis were kept constant. Some devices were observed to emit orange-colored light, consistent with photoluminescence behavior of the silicon quantum dots. Photomultiplier tube measurements shows a turn-on voltage of 5V and an exponential increase in light emission with voltage increase.

Silicon-based lighting show promise for display and solid state lighting use. Here we demonstrate a novel thin film light emitting diode device using nanocrystalline silicon quantum dots as an emission layer, and metal oxides as charge transport layers. Sputtering deposition conditions for the nickel and zinc oxides were explored in order to balance deposition rate with minimal roughness, optical absorption, and electrical resistivity. Devices displaying characteristic diode current-voltage behavior were routinely produced, although most showed significant reverse saturation current due to the presence of shunts. Current-voltage behavior of devices made in the same batch showed high repeatability, however variations in device performance was observed between batches while the parameters of synthesis were kept constant. Some devices were observed to emit orange-colored light, consistent with photoluminescence behavior of the silicon quantum dots. Photomultiplier tube measurements shows a turn-on voltage of 5V and an exponential increase in light emission with voltage increase.

The exploration of a quantum dot fluorescence resonance energy transfer (QD-FRET) based bioassay for label-free target nucleic acid detection is reported herein. This work explores the potential for developing a displacement assay for detection of nucleic acid sequences of various lengths, including one of 484 bases. Short probe oligonucleotides conjugated to QDs were allowed to hybridize to short partially mismatched dye-labelled oligonucleotide targets. The non-labelled target of interest, a 484-base segment of heat shock protein 70 (HSP 70), contained a portion that was fully complementary to the probe. Thermodynamic parameters suggested that HSP 70 would displace dye-labelled targets; however, detection was not observed. Modifications were made to this assay to reduce sterics and increase the stability of hybrids. The results obtained using this modified assay indicated that detection of non-labelled, long oligonucleotide sequences was possible using a displacement assay that relied on a short probe oligonucleotide.

The exploration of a quantum dot fluorescence resonance energy transfer (QD-FRET) based bioassay for label-free target nucleic acid detection is reported herein. This work explores the potential for developing a displacement assay for detection of nucleic acid sequences of various lengths, including one of 484 bases. Short probe oligonucleotides conjugated to QDs were allowed to hybridize to short partially mismatched dye-labelled oligonucleotide targets. The non-labelled target of interest, a 484-base segment of heat shock protein 70 (HSP 70), contained a portion that was fully complementary to the probe. Thermodynamic parameters suggested that HSP 70 would displace dye-labelled targets; however, detection was not observed. Modifications were made to this assay to reduce sterics and increase the stability of hybrids. The results obtained using this modified assay indicated that detection of non-labelled, long oligonucleotide sequences was possible using a displacement assay that relied on a short probe oligonucleotide.

If solar energy is to be a significant component of our energy supply, technologies are required which produce high efficiency solar cells using inexpensive materials and versatile manufacturing processes. Solution-processed materials have been used to create low cost, easily fabricated devices, but have suffered from low power conversion efficiencies. A lack of infrared energy capture limits their efficiency. In this work we develop solution-processed photovoltaic devices using lead sulphide quantum dots and high surface area porous oxide electrodes. The resultant devices have a spectral response from 400 to 1800 nm. In fabricating these devices we utilize crosslinking molecules. We explore the impact crosslinkers have on the mobility and morphology of quantum dot films using field effect transistors and transmission electron microscopy. We also explore a hybrid organic/inorganic route for controlling the net doping in quantum dot films. We investigate the chemical and compositional changes that lead sulphide quantum dots films undergo during crosslinker treatment and annealing. Using this information we optimize our charge separation efficiency and our open circuit voltage. The resulting devices have an infrared power conversion efficiency of 2%, four orders of magnitude higher than that in previously reported lead sulphide quantum dot devices.

The commercially available solar cells suffer from low efficiency and high cost. This would avoid presence of solar cells as a secure energy resource in the market. Problems stem from two facts. Firstly, band gap of materials deployed for cell fabrication do not match the solar spectrum. Secondly, harvesting all the generated electrons is imperfect due to presence of many non-radiative recombination processes and, thermalization of electrons. To transcend these deficiencies, third generation of solar has been introduced. This new generation renders a whole new concept both in design and materials of solar cells scope. One of new introduction to solar cell field is Quantum Dot (QD). QD offers a broad range of tunability. The optical and electrical properties of QDs can be altered by choice of material, size and shape; therefore; they have great potential for high efficiency cell fabrication. QDs are mainly grown via MBE or synthesized via Colloidal solutions. QDs could be integrated as a part of one of new and promising third generation cells, named Intermediate Band Solar Cells. QDs could be employed as the intermediate level. If MBE is the selected method for cell fabrication, QDs would grow in a matrix of barrier material accompanied with a wetting layer. Wetting layer would disturb the ideal condition predicted in theory for gaining the high efficiency. To study how wetting layer would affect IB performance two sets of simulations have been carried out. One part is done with COSMOL. In this part different number of QDs layers have been simulated with and without wetting layer. The result showed that parasitic effect of wetting layer could not be eliminated large stacks of QD are stacked together, to achieve the promised efficient wetting layer should be eliminated from the system. In MATLAB part QDs have been approximated with simple cuboid. The main aim in this part was to compare how the result of taking into the account the real shape differs from a simple approach which has been the most reported the most in literature. If all the restrains on achieving high efficiency of IBSC are met, still one major draw- back remains and, that is high cost of MBE process. This would hinder mass production of IB cell. One possible potential method to gradually replace MBE can be Colloidal QDs. Colloidal QDs are fairly low cost and easy to fabricate. In this work, colloidal crystal growth was examined. The best condition for monolayer deposition was obtained and, the feasibility of crystal growth was demonstrated. additionally, There was an attempt to grow more than one layer and investigate result of embedding QDs in a barrier of another material.

Resonance fluorescence from solid state devices have been motivated by the capability to obtain a bright source of antibunched and indistinguishable photons from a semiconductor chip. Such a photon source would be a strong candidate for applications in the quantum information field. In this thesis, an experimental setup to obtain high signal to noise resonance fluorescence from a single quantum dot is first presented. I then discuss the photon statistics, power spectrum, second-order correlation function and two-photon interference of the stream of resonance fluorescence. Particular emphasis is placed on a throughout investigation of spectral fluctuations caused by charge noise and Overhauser field generated by fluctuating nuclear spins in the quantum dot. In each case, it is found that noise can be overcome to generate single photons that exhibit high visibility two-photon interference. Finally, an interference effect caused by the interaction of a quantum dot and a nearby metal surface is presented. Preliminary analysis yields quantitative agreement with the data.

Sources of entangled pairs of photons can be used for encoding signals in quantum-encrypted communications, allowing a sender, Alice, and a receiver, Bob, to exchange keys without the possibility of eavesdropping. In fact, any quantum information system would require single and entangled photons to serve as qubits. For this purpose, semiconductor quantum dots (QD) have been extensively studied for their ability to produce entangled light and function as single photon sources. The quality of such sources is evaluated based on three criteria: high efficiency, small multi-photon probability, and quantum indistinguishability. In this work, a simple quantum dot-based LED (E-LED) was used as a quantum light source for on-demand emission, indicating the potential for use as quantum information devices. Limitations of the device include the fine-structure splitting of the quantum dot excitons, their coherence lengths and charge carrier interactions in the structure. The quantum dot-based light emitting diode was initially shown to operate in pulsed mode under AC bias frequencies of up to several hundreds of MHz, without compromising the quality of emission. In a Hong-ou-Mandel interference type experiment, the quantum dot photons were shown to interfere with dissimilar photons from a laser, achieving high two-photon interference (TPI) visibilities. Quantum entanglement from a QD photon pair was also measured in pulsed mode, where the QD-based entangled-LED (E-LED) was electrically injected at a frequency of 203 MHz. After verifying indistinguishability and good entanglement properties from the QD photons under the above conditions, a quantum relay over 1km of fibre was demonstrated, using input qubits from a laser source. The average relay fidelity was high enough to allow for error correction for this BB84-type scheme. To improve the properties of the QD emission, an E-LED was developed based on droplet epitaxy (D-E) QDs, using a different QD growth technique. The relevant chapter outlines the process of QD growth and finally demonstration of quantum entanglement from an electrically injected diode, yielding improvements compared to previous E-LED devices. For the same reason, an alternative method of E-LED operation based on resonant two-photon excitation of the QD was explored. Analysis of Rabi oscillations in a quantum dot with a bound exciton state demonstrated coupling of the ground state and the biexciton state by the external oscillating field of a laser, therefore allowing the transition between the two states. The results include a considerable improvement in the coherence length of the QD emission, which is crucial for future quantum network applications. We believe that extending this research can find application in quantum cryptography and in realising the interface of a quantum network, based on semiconductor nanotechnology.