Materiais semicondutores sÃo os principais responsÃveis pelo grande crescimento da indÃstria eletrÃnica e pelo surgimento de novas tecnologias. A criaÃÃo de heteroestruturas possibilitou um grande impulso à fÃsica do estado sÃlido. Atualmente, o estudo de semicondutores està concentrado em sistemas de dimensionalidade reduzida, como os poÃos, fios, pontos e aneis quÃnticos. Neste trabalho, investigamos as propriedades de transporte em fios quÃnticos heteroestruturados de barreira dupla e em sistemas bidimensionais de barreira simples e dupla. Iniciamos com o cÃlculo da energia do confinamento radial no fio quÃntico InAs/InP de barreira dupla. Usamos um modelo de fio cilÃndrico com e sem interfaces graduais. Calculamos as transmissÃes atravÃs das barreiras e estudamos o comportamento das mesmas variando a largura das barreiras, a distÃncia entre elas e o raio do fio. Futuramente utilizaremos estes resultados para o cÃlculo da corrente elÃtrica atravÃs do dispositivo. TambÃm investigamos as propriedades de transporte em sistemas bidimensionais com potencial de auto-energia. Utilizamos heteroestruturas formadas por Si/SiO2 e Si/HfO2. Sendo as constantes dielÃtricas dos Ãxidos diferentes do silÃcio, resolvemos a equaÃÃo de Poisson com epsilon dependente de z. Expandimos o potencial em uma sÃrie de Fourier-Bessel, encontrando, por fim, o potencial imagem para as barreiras. Calculamos a corrente elÃtrica atravÃs deste potencial em funÃÃo da voltagem, variando a temperatura, a distÃncia entre as barreiras. TambÃm levamos em conta as interfaces graduais para o caso de barreira simples. / Semiconductor materials are responsible for the large development in electronic industry, what made it possible the creation of new devices. The heterostructures gave a large impulse to the solid-state physics. Semiconductors study is nowadays concentrated in the low-dimensional systems, as quantum wells, quantum wires, quantum dots and quantum rings. In this work, we investigate the transport properties of heterostructured quantum wires of double barrier. We begin with calculation of radial confinement energy in a quantum wire InAs/InP of double barrier. We use a cylindrical model of wire with gradual and abrupt nterfaces. Transmission coefficients are calculated. We study its behavior varying barriers width, distance between them and the wire radius. In the future, we will use these results to calculate electric current through the device. We also investigate transport properties of bidimensional systems with self-energy potential. We use heterostructures of Si/SiO2 and Si/HfO2. We solve Poissonâs equation with epsilon depending on z, expanding the potential in a Fourier-Bessel series, finding the image potential of the barriers. We calculate the electric current through this potential in function of the applied voltage, varying temperature and the distance between the barriers. We also consider gradual interfaces for the simple barrier case.

Neste trabalho, apresentamos estudos sobre o magnetotransporte em um sistema de bicamadas com uma rede de antipontos triangulares em campos magnéticos baixos sob a aplicação de campos elétricos externos, que são produzidos por voltagens de porta. A bicamada é feita em poços quânticos largos (wide quantum well) de alta densidade eletrônica, formado em heteroestruturas semicondutoras de AlxGa1xAs=GaAs. Oscila- ções magneto-inter-sub-banda (MIS) são observadas em poços quânticos largos de alta densidade eletrônica com duas sub-bandas ocupadas. Estas são originadas pelo espalhamento inter-sub-bandas e tem um máximo para campos magnéticos B que satisfazem a condição de alinhamento entre os leques dos níveis de Landau de cada sub-banda. Oscila- ções de comensurabilidade são observadas na magnetoresistência que é sensível ao arranjo do potencial dos antipontos. A aplicação de campos elétricos faz diminuir o número de oscilações na magnetoresistência para campos magnéticos compreendidos entre 0; 1T e 0; 4T, observando-se uma transição das oscilações MIS aos efeitos de comensurabilidade. Aplicando voltagens de porta podemos variar a amplitude do potencial dos antipontos. / In this work, we present studying about magnetotransport in a bilayer system with triangular antidot lattices in low magnetic elds under the application of external electric eld. The bilayer forms inside a wide quantum well of high electron density in semiconductor heterostructures formed by AlxGa1xAs=GaAs. Magneto-inter-subband (MIS) oscillations are observed in a wide quantum wells of high electron density with two subbands occupied, and they are caused by intersubband scattering and have a maximum for a magnetic eld B that satises the alignment condition between the staircase of Landau level. Commensurability oscillations are observed in magnetoresistance, which is sensitive to the potential of antidot arrangements. The application of electric elds decrease the number of oscillations in the magnetoresistance for magnetic elds between 0; 1T and 0:4T, showing a transition of MIS oscillations to commensurability oscillations. We varied the amplitude of the potential of the antidots applying dierent gate voltages.

In this thesis, I will present and discuss research performed on InGaN/GaN multiple quantum well (QW) structures. The results of which were taken using photoluminescence (PL) spectroscopy and PL time decay spectroscopy. In the first two experimental chapters, I report on the effects of QW growth methodology on the optical properties of c-plane InGaN/GaN QWs. I compare structures grown using the single temperature (1T), quasi-two temperature (Q2T), temperature bounced (T-bounced) and two temperature (2T) QW growth methodologies. The T-bounced and 2T structures are observed to have gross well width fluctuations (GWWF), where the QW width varies from 0 to 100 % created when the QWs are exposed to a temperature ramp. Whereas, the 1T and Q2T structures have continuous QWs with only one or two monolayer well width fluctuations. The structures with GWWFs are observed to have a larger room temperature internal quantum efficiency (RT-IQE) at low excitation conditions i.e. below efficiency droop compared to those without. The larger RT-IQE is ascribed to several factors which include an increased radiative recombination rate, increased thermal activation energy of non-radiative recombination and reduced defect density of the QWs. The effect of barrier growth temperature is also investigated. No clear trend is observed between barrier growth temperature and RT-IQE.In the last experimental chapter I report on studies of carrier localisation in InGaN/GaN QWs using resonant PL spectroscopy. The effect of carrier localisation on the independently localised electrons and holes are investigated and the resonant PL spectrum is studied in detail. The InGaN/GaN QW structure is observed to exhibit an effective mobility edge at 12 K where delocalised carriers are created above a particular excitation energy. The emission from the resonantly excited localised states which are accompanied by the emission of a longitudinal optical phonon (resonant LO feature) is investigated as a function of temperature and excitation energy. The integrated PL intensity of the resonant LO feature is observed to quench rapidly with temperature up to around 45 K, independent of excitation energy. The integrated PL intensity of the resonant LO feature is fitted to an Arrhenius model and a thermal activation energy of ∼ 1(±1) meV is extracted. This activation energy is speculated to be consistent with the localisation energy of electrons.

Gegenstand der vorliegenden Arbeit ist die Untersuchung der Photoluminenzenzdynamik von Halbleiter-Quantentöpfen (Quantum Wells), die durch Anregung von Intraband-Übergängen mittels resonanter Laserpulse im mittleren Infrarot- und Terahertz-Spektralbereich verändert wird. Diese Zweifarbenexperimente wurden mit Hilfe eines optischen Aufbaus für zeitaufgelöste Photolumineszenzspektroskopie am Großgerät Freie-Elektronen Laser FELBE am Helmholtz-Zentrum Dresden-Rossendorf realisiert. Zeitlich verzögert zur gepulsten optischen Anregung über die Bandlücke wurden Intersubband- oder Intraexziton-Übergänge in den Quantum Wells resonant angeregt. Die dadurch erreichte Ladungsträgerumverteilung zeigt sich in einer deutlichen Verringerung der Photolumineszenzintensität zum Zeitpunkt des zweiten Anregepulses, die im Folgenden als Photolumineszenz-Quenching bezeichnet wird. Zunächst wird die Stärke des Photolumineszenz-Quenchings in Abhängigkeit der Polarisationsrichtung des midinfraroten Laserstrahls ausgewertet. Während die Absorption durch freie Ladungsträger für beide Polarisationsrichtungen nachweisbar ist, wird experimentell gezeigt, dass Intersubbandabsorption nur möglich ist, wenn ein Anteil der anregenden Strahlung senkrecht zur Quantum-Well-Ebene polarisiert ist. Das Photolumineszenzsignal ist überwiegend an der energetischen Position der 1s-Exzitonresonanz unterhalb der Bandkante messbar. Die intraexzitonischen Übergangsenergien in Quantum Wells liegen typischerweise im Terahertzbereich. Unter intraexzitonischer 1s-2p Anregung erscheint auch auf dieser Energieskala ein abrupter Intensitätsverlust in der langsam abklingenden Photolumineszenztransiente. Erstmalig wurde im Photolumineszenzspektrum bei höheren Energien im Abstand der Terahertz-Photonenenergie ein zusätzliches 2s-Photolumineszenzsignal detektiert. Eine detaillierte theoretische Beschreibung dieses Problems durch unsere Kooperationspartner Koch et al. von der Phillips-Universität Marburg zeigt, dass unter intraexzitonischer 1s-2p Anregung eine effziente Coulombstreuung zwischen den nahezu entarteten exzitonischen 2p- und 2s-Zuständen stattfindet. Während der 2p-Zustand optisch dunkel ist, kann die 2s-Population strahlend rekombinieren, was zu dem besagten 2s-Photolumineszenzsignal führt. Die Zeitkonstanten der untersuchten Ladungsträgerdynamik werden durch ein phänomenologisches Modell bestimmt, das die experimentellen Kurven sehr gut abbildet. Es wird ein Ratengleichungsmodell eingeführt, bei dem die involvierten Zustände auf optisch helle und optisch dunkle Besetzungsdichten reduziert werden. Darüber hinaus werden mit einem modifizierten Versuchsaufbau die Terahertz-induzierten Photolumineszenzsignaturen von Magnetoexzitonen untersucht. Die Stärke des 1s-Photolumineszenz-Quenchings ändert sich dabei entsprechend der magnetoexzitonischen Übergänge, die im betrachteten Feldstärkebereich zwischen 0T und 7T liegen. Für Magnetfelder größer als 3T sind keine 2s-Photolumineszenzsignale mehr messbar, da durch das externe magnetische Feld die Entartung der 2p- und 2s-Zustände aufgehoben wird.

Advent of ultrashort lasers made it possible to probe various scattering phenomena in materials that occur in a time scale on the order of few femtoseconds to several tens of picoseconds. Nonlinear optical spectroscopy techniques, such as pump-probe, transient four wave mixing (TFWM), etc., are very common to study the carrier dynamics in various material systems. In time domain, the transient FWM uses several ultrashort pulses separated by time delays to obtain the information of dephasing and population relaxation times, which are very important parameters that govern the carrier dynamics of materials. A recently developed multidimensional nonlinear optical spectroscopy is an enhanced version of TFWM which keeps track of two time delays simultaneously and correlate them in the frequency domain with the aid of Fourier transform in a two dimensional map. Using this technique, the nonlinear complex signal field is characterized both in amplitude and phase. Furthermore, this technique allows us to identify the coupling between resonances which are rather difficult to interpret from time domain measurements. This work focuses on the study of the coherent response of a two dimensional electron gas formed in a modulation doped GaAs/AlGaAs quantum well both at zero and at high magnetic fields. In modulation doped quantum wells, the excitons are formed as a result of the inter- actions of the charged holes with the electrons at the Fermi edge in the conduction band, leading to the formation of Mahan excitons, which is also referred to as Fermi edge singularity (FES). Polarization and temperature dependent rephasing 2DFT spectra in combination with TI-FWM measurements, provides insight into the dephasing mechanism of the heavy hole (HH) Mahan exciton. In addition to that strong quantum coherence between the HH and LH Mahan excitons is observed, which is rather surprising at this high doping concentration. The binding energy of Mahan excitons is expected to be greatly reduced and any quantum coherence be destroyed as a result of the screening and electron-electron interactions. Such correlations are revealed by the dominating cross-diagonal peaks in both one-quantum and two-quantum 2DFT spectra. Theoretical simulations based on the optical Bloch Equations (OBE) where many-body effects are included phenomenologically, corroborate the experimental results. Time-dependent density functional theory (TD-DFT) calculations provide insight into the underlying physics and attribute the observed strong quantum coherence to a significantly reduced screening length and collective excitations of the many-electron system. Furthermore, in semiconductors under the application of magnetic field, the energy states in conduction and valence bands become quantized and Landau levels are formed. We observe optical excitation originating from different Landau levels in the absorption spectra in an undoped and a modulation doped quantum wells. 2DFT measurements in magnetic field up to 25 Tesla have been performed and the spectra reveal distinct difference in the line shapes in the two samples. In addition, strong coherent coupling between landau levels is observed in the undoped sample. In order to gain deeper understanding of the observations, the experimental results are further supported with TD-DFT calculation.

Die vorliegende Arbeit befasst sich mit dem vertieften Verständnis der Rekombinationsdynamik von polaren ZnO/MgZnO-Quantengraben(QW)-Strukturen zur exakten Bestimmung des unabgeschirmten Grundzustandes und der Analyse der zugrundeliegenden Emissionsprozesse. Dafür werden ausgehend von Beobachtungen an ZnO-Dünnschichten die Eigenschaften von mittels PLD hergestellten QWs unter dem Einfluss des internen elektrischen Feldes mit Hilfe der zeitintegrierten (TI-) und zeitaufgelösten (TR-) Photolumineszenz(PL)-Spektroskopie untersucht. Die Differenz der spontanen und piezoelektrischen Polarisation zwischen ZnO und MgZnO führt zur Ausbildung eines internen elektrischen Feldes und damit zum Auftreten des quantum-confined Stark effect (QCSE). Es wird gezeigt, dass der QCSE durch eine Durchmischung der Grenzflächen stark vermindert wird. Für QWs mit schwachem QCSE ist die Übergangsenergie und Zerfallszeit des Grundzustandes experimentell gut bestimmbar. Bei starkem QCSE müssen jedoch bereits bei geringen Anregungsdichten (1E10 /cm²) Abschirmeffekte berücksichtigt werden. Dadurch ist es sehr schwierig, den unabgeschirmten Grundzustand mittels herkömmlicher experimenteller Methoden mit einem aussagekräftigen Signal-Rausch-Verhältnis zu bestimmen. Es wird gezeigt, dass für QWs mit einer Dicke > 4 nm die Übergangsenergie des unabgeschirmten Grundzustandes nicht durch TI-PL-Messungen bestimmt werden kann. TR-PL-Messungen zeigen energetisch tiefere Übergangsenergien, jedoch ebenfalls nicht den unabgeschirmten Grundzustand. Mit einem eingeführten Modell zur Beschreibung der zeitabhängigen Abschirmung des Grundzustandsniveaus wird die Zerfallszeit für QW-Dicken in einem Bereich von 1 - 10 nm bestimmt. Durch die selbstkonsistente Lösung von Schrödinger- und Poissongleichung werden die Übergangsenergie und Zerfallszeit der Exzitonen im QW in Abhängigkeit der Feldstärke und auch der Ladungsträgerdichte berechnet. Dadurch ist eine exaktere Bestimmung der Feldstärke möglich. Zusätzlich wird durch die vergleichende Untersuchung von QWs unterschiedlicher Dicke, Potentialhöhe und Wachstumsunterlage die spontane und piezoelektrische Polarisation der Materialien experimentell bestimmt. Mittels temperaturabhängiger Messungen wird der Ursprung der Lumineszenz für QW-Dicken > 2 nm der Rekombination freier Exzitonen im QW zugeschrieben. Für dünnere QWs ist der temperaturabhängige Verlauf des PL-Maximums durch Lokalisation der Exzitonen bestimmt.

In this thesis we present a study about strong light-matter interaction in a broad single GaAs/AlGaAs quantum well representing a 3-level system. In particular we investigate the AC-Stark effect, where we observe in THz absorption spectra an Autler-Townes splitting as well as a Mollow-triplet. Compared to previous work, we showed for the first time an all-THz pump-probe experiment in the THz regime below the Reststrahlenband. Furthermore, we observe a strong frequency shift in the absorption energy of the first intersubband transition depending on the charge carrier density in the quantum well. The Autler-Townes splitting as well as the absorption frequency shift can be potentially exploited for THz-modulation applications. Beyond nonlinear optics many interesting effects occur in the strong light-matter interaction regime such as Rabi oscillations, coherent population trapping, lasing without inversion, electromagnetically induced transparency (EIT) and the AC-Stark effect. Our quantum well represents a 3-level system in which we investigate a splitting behaviour in the absorption spectrum of the first and second intersubband transition. Especially a splitting for the first intersubband transition is predicted also for electromagnetically induced transparency, while the second intersubband transition is pumped with a strong varying electric field. Naturally, a fundamental question is, how to distinguish EIT and an Autler-Townes duplet since both result in a spectrally transparent window. The method of choice for investigations combines narrowband pulses in the THz range provided by a free-electron laser and broadband THz pulses generated in a GaP crystl within a THz time-domain spectroscopy setup. In this unique configuration we perform time-resolved pump and probe spectroscopy experiments by pumping resonantly the second intersubband transition at 3.4 THz to induce a splitting of the second and third subband. Broadband THz pulses then probe an absorption splitting of about 0.2 THz related to the first intersubband transition at ≈ 2.3 THz as well as a splitting of the second intersubband transition (Mollow triplet). Analyzing experiments and using a theoretical criteria to distinguish EIT and Autler-Townes splitting, we conclude to observe an Autler-Townes doublet instead of an EIT effect. / In dieser Arbeit berichten wir über die starke Licht-Materie Wechselwirkung in 3-Niveau system anhand eines einzelnen, breiten GaAs/AlGaAs Quantentopfes. Insbesondere untersuchen wir den AC-Stark Effekt und beobachten eine Aufspaltung des Absorptionsspektrums durch das Autler-Townes Dublett und das Mollow Triplett. Im direkten Vergleich mit vorangegangenen Arbeiten zeigen wir zum ersten Mal ein reines THz Anrege-Abfrage Experiment mit Frequenzen unterhalb des Reststrahlenbandes. Weiterhin beobachten wir eine starke Frequenzverschiebung der Absorptionsenergie des ersten Intersubbandübergangs in Abhängigkeit von der Ladungsträgerdichte im Quantentopf. Sowohl das Autler-Townes Dublett als auch die Verschiebung der Absorptionsfrequenz ermöglichen potentielle Anwendung im Bereich der THz-Modulation. Im Bereich der starken Licht-Materie Wechselwirkung sind viele interessante Effekte beobachtbar wie Rabi Oszillationen, coherent population trapping, Lasern ohne Inversion, elektromagnetisch induzierte Transparenz (EIT) und der AC-Stark Effekt. Unser Quantentopf stellt ein 3-Niveau System dar, in welchem wir eine Aufspaltung der Absorption bezüglich des ersten und zweiten Intersubbandübergangs beobachten. Insbesondere für den ersten Intersubbandübergang ist auch eine Absorptionsaufspaltung durch den EIT Effekt vorhergesagt, während der zweite Intersubbandübergang durch ein starkes, elektrisches Wechselfeld angeregt wird. Es stellt sich dann die Frage, wodurch sich die Effekte EIT und Autler-Townes splitting unterscheiden, weil beide durch ein spektrales transparentes Fenster gekennzeichnet sind. Die von uns gewählte Methode verknüpft schmalbandige, starke elecktrische Wechselfelder im THz-Bereich eines freien Elektronen Lasers und breitbandigen THz-Pulsen, welche durch nichtlineare optische Effekte in einem THz Zeit-Bereichs Spektroskopie Aufbaus erzeugt werden. In dieser einzigartigen Konfiguration führen wir zeitaufgelöste Anrege-Abfrage Spektroskopie Experimente durch, in dem wir den zweiten Intersubbandübergang bei 3, 4 THz nahezu resonant anregen und das zweite und dritte Subband aufspalten. Mit breitbandigen THz Pulsen fragen wir dann die Absorptionsaufspaltung von ca. 0, 2 THz des ersten Intersubbandübergangs bei ≈ 2, 3 THz und des zweiten Intersubbandübergangs (Mollow-Triplett) ab. Nach Auswerten der Experimente und theoretischer Kriterien für die Unterscheidung zwischen EIT und Autler-Townes splitting schlussfolgern wir, ein Autler-Townes Dublett zu beobachten.

In this thesis we investigate experimentally certain aspects of the interaction of terahertz (THz) radiation with intersubband transitions and excitonic transitions in semiconductor quantum wells. The first part deals with a more fundamental view on an intersubband transition in a symmetric, undoped GaAs/AlGaAs multiple quantum well. After optical excitation of carriers, the considered electronic conduction intersubband transition is probed in the low-intensity linear regime using broadband THz pulses. These pulses are detected via field-resolved electro-optic sampling. While the sample’s terahertz absorption shows the expected single peak of the resonant intersubband transition, the differential transmission spectra, i.e. the photoexcitation-induced changes in transmission, display strong Fano signatures. On the basis of a microscopic theory, we show that they originate from a phase sensitive superposition of THz current and ponderomotive current. The latter one results from the wiggling motion of carriers induced by the accelerating THz field. Our findings demonstrate for the first time that the ponderomotive contribution has to be taken into account also at the lowest THz intensities. The following issues consider the interaction with THz pulses of higher intensity from the free-electron laser (FEL) of the Forschungszentrum Dresden-Rossendorf. In one experiment we investigate efficient second order sideband generation in the GaAs/AlGaAs multiple quantum well mentioned above. To this end a near-infrared laser tuned to excitonic interband transitions is mixed inside the sample with the inplane polarized FEL beam to create the sum- and difference-frequencies between them. We compare the sideband efficiencies for the THz beam tuned to the interexcitonic heavy-hole light-hole transition and to the intraexcitonic heavy-hole 1s-2p transition. In the latter case we achieve a ten times higher n=+2 low-temperature efficiency around 0.1%. This value is comparable to previous studies in the literature, but our approach involves different transitions in a much simpler geometry. At room temperature the efficiency drops only by a factor of 7 for low THz powers. The last part of this thesis addresses another fundamental quantum-mechanical phenomenon: the splitting of an absorption line in a strong THz field. In the same abovementioned quantum well sample the FEL wavelength is tuned near the intraexcitonic 1s-2p heavy-hole transition. The THz radiation induces a power-dependent splitting of the heavy-hole 1s exciton absorption line which manifests itself in the transmitted spectrum of a broadband near-infrared probe beam. The FEL-wavelength-dependent strength of this so-called Autler-Townes splitting is discussed on the basis of a simple two-level model.

The effects of surface plasmon for InGaN/GaN multi-quantum wells and ZnO nanoparticles optical linear and nonlinear emission efficiency had been experimentally studied. Due to the critical design for InGaN MQWs with inverted hexagonal pits based on GaN, both contribution of surface plasmon effect and image charge effect at resonant and off resonant frequencies were experimentally and theoretically investigated. With off- resonant condition, the InGaN MQWs emission significantly enhanced by metal nanoparticles. This enhancement was caused by the image charge effect, due to the accumulation of carriers to NPs region. When InGaN emission resonated with metal particles SP modes, surface Plasmon effect dominated the emission process. We also studied the surface plasmon effect for ZnO nanoparticles nonlinear optical processes, SHG and TPE. Defect level emission had more contribution at high incident intensity. Emissions are different for pumping deep into the bulk and near surface. A new assumption to increase the TPE efficiency was studied. We thought by using Au nanorods localized surface plasmon mode to couple the ZnO virtual state, the virtual state’s life time would be longer and experimentally lead the emission enhancement. We studied the TPE phenomena at high and near band gap energy. Both emission intensity and decay time results support our assumption. Theoretically, the carriers dynamic mechanism need further studies.

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