<p> Compositionally asymmetric multiple quantum well (AMQW) lasers are used for the demonstration of the gain flattening coating functionality. The gain spectra of the lasers are extracted using a non-linear least square fitting method. An optimum facet reflectance spectrum is calculated for a chosen current. For manufacturability, a modified reflectance spectrum of the gain flattening coating is proposed, in order to achieve operation over a wider spectral range without the 'difficult' gap which was a region where lasing was difficult or impossible to achieve due to insufficient gains at these wavelengths. </p> <p> Silicon oxides films with high, medium, and low refractive indices fabricated in an inductively coupled plasma (ICP) enhanced chemical vapor deposition (CVD) system are chosen as the building blocks of the gain flattening coating. An 18-layer coating is designed by the insertion of needle-like refractive index variation with a few optimization methods applied to minimize the merit function. A laser bar holder is custom designed and fabricated. Experiments and modification on the laser bar holder are carried out for better performance. The 18-layer gain flattening coating is then fabricated in the ICPCVD system with an in-situ spectroscopic ellipsometric measurement. It is observed that the non-lasing gap has disappeared after the coating is applied. Without external feedback, the coated laser shows tuning over 85 nm with the central wavelength of 1593 nm, while the uncoated laser has a non-lasing gap of about 25 nm in the central region of the tuning range of 70 nm. </p> <p> Finally, the coherence length of a low coherent source synthesized from the gain flattening coated AMQW laser is measured by using Michelson interferometer. The highest depth resolution that can be achieved is measured as 40 μm. The power intensity of the synthesized low coherence light source from the gain flattening coated AMQW laser is rendered from the interferogram using fast Fourier transform (FFT). </p> / Thesis / Doctor of Philosophy (PhD)

Recently Silicon Germanium alloy (Si_1-xGe_x) is showing lots of potentials in device fabrication. Most of the structures containing Si_1-xGe_x that are fabricated at present involve Si/Si_1-xGe_x heterostructure. The fabrication process involves several high temperature anneal steps in either inert, oxidizing or nitriding ambient which results the interdiffusion of Si and Ge through the hetero-interfaces. The interdiffusion causes broadening of Si/Si1_xGex interface and changes the physical position of the heterointerface which can cause degradation of device performance. Several studies have so far been done to quantify the amount of Ge interdiffusion in heterostructures. However no study has yet been performed to model this phenomenon. Modeling the interdiffusion mechanism is important for two reasons: (1) it will facilitate to calibrate the device characteristics taking the effect of interdiffusion mechanism into calculations prior to device fabrication; and (2) to get a better insight of the actual mechanism involved in the interdiffusion process. In this study, attempt has been taken to model interdiffusion of Si and Ge in structures having Si/Si_1-xGe_x hetero-interfaces. Mathematical models are proposed to model the behavior and the models are applied to previously published results where samples were annealing in inert, oxidizing and nitriding ambient at different anneal temperatures for different anneal times. First only the contributions of vacancies in the interdiffusion mechanism are considered. This can successfully model the interdiffusion mechanism for samples annealed in inert and oxidizing ambients at low temperatures (below 1050°C). Next the contributions of interstitials along with vacancy in the interdiffusion mechanism are considered. These are able to successfully model the interdiffusion phenomenon for the samples annealed in oxidizing and nitriding ambients at high temperatures (above 1050°C). The success of the modeling is justified by getting good match between the simulated and the experimental interdiffusion profiles along with good match between the fitting parameters used in the simulations compared with previous reported values. Besides modeling the interdiffusion mechanism, for the first time, a mathematical model is proposed for vacancy injection while nitridation of silicon is done. / Thesis / Master of Applied Science (MASc)

Electroabsorption and electrorefraction were studied in GaAs/AlGaAs and InP/InAsP multiple quantum well waveguides. Measurements of changes of the absorption coefficient and the refractive index with wavelength and bias voltage were made. Switching ratios of up to 18 dB were obtained for the GaAs/AlGaAs material. The Kramers-Kronig relation was used to calculate the theoretical phase shifts from the absorption coefficient data. / Thesis / Master of Engineering (ME)

More efficient semiconductor lasers will be needed in tomorrow's applications. These lasers can only be realized through the application of new device processing techniques, designed to restrict current, carrier, and/or photon flow through the lasing cavity. This work aims to evaluate a non-conventional stripe laser processing technique which has the potential for effective current and possibly carrier confinement at low cost. This technique, referred to as hydrogen passivation, involves exposing laser material to a low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and donor atoms. Such binding compensates the electrical activity of these dopant atoms and thereby increases the resistance of the exposed material. Optical confinement can also be achieved (subsequent to hydrogenation) by using a simple wet-etching process to form a lateral waveguide. Stripe lasers fabricated via hydrogen passivation have been demonstrated previously; however, the benefits of this method have not been fully explored or characterized. Our work aims to quantify the degree of current and carrier confinement provided by this technique. The cleaved cavity method of analysis is used to extract laser parameters via direct measurement. These parameters are then compared against those obtained from more conventional stripe lasers to identify improvements that have accrued from using hydrogen passivation. / Master of Science

A detailed characterization of the Ini-xGaxAsyP1-j, quaternary material system lattice matched to GaAs, grown by gas source Molecular Beam Epitixy (MBE) has been performed. Photoluminescence, X-ray diffraction and Transmission Electron Microscopy (TEM) were used to study the lateral composition modulation (LCM) which was observed in this material system. Optimization of the growth process and the substrate orientation resulted in a significant reduction of the LCM. Additionally, a comprehensive analysis of the optical constants was performed which resulted in the first publication of wavelength and composition dependent index of refraction data for this material system. The combination of growth optimization and index of refraction data lead to the demonstration of efficient, low threshold operation of InGaAsP/GaAs based multiple quantum well lasers. In order to efficiently couple the above laser diodes to an external cavity to facilitate the generation of ultrashort pulses, antireflection facet coatings were required. As such, optical interference filters have been fabricated using a plasma enhanced chemical vapor deposition system, based on the SiOxNy material system. High quality antireflection facet coatings, suitable for application to the InGaAsP/GaAs diode lasers have been designed and fabricated, resulting in modal reflectivities of 1-2 x 10-4. Finally, an ultrashort-pulse external-cavity diode laser system was designed and manufactured which allowed the laser diode to be wavelength tuned and emit mode-locked ultrashort optical pulses. Pulses with sub 2 ps duration and greater than 1 mW average output power have been achieved. A study of the novel application of an asymmetric quantum well structure to the generation of ultrashort optical pulses has been proposed and initiated. / Thesis / Doctor of Philosophy (PhD)

In this thesis, two methods to model quantum well lasers will be examined. The first model is based on well-known techniques to determine some of the spectral and dynamical properties of the laser. For the spectral properties, an expression for TE and TM modal amplitude gain is derived. For the dynamical properties, the rate equations are shown. The spectral and dynamical properties can be examined separately for specific operating characteristics or used in conjunction with each other for a complete description of the laser. Examples will be shown to demonstrate some of the analysis and results that can be obtained. The second model used is based on Wigner functions and the quantum Boltzmann equation. It is derived from general non-equilibrium Greens functions with the application of the Kadanoff-Baym ansatz. This model is less phenomenological than the previous model and does not require the separation of physical processes such as the former spectral and dynamical properties. It therefore has improved predictive power for the performance of novel laser designs. To the Author's knowledge, this is the first time such a model has been formulated. The quantum Boltzmann equations will be derived and some calculations will be performed for a simplified system in order to illustrate some calculation techniques as well as results that can be obtained.

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal.

Neste trabalho, foram estudados os modelos mais comuns para a descrição da corrente de escuro em fotodetectores baseados em poços quânticos (QWIPs). Foram também realizadas as alterações necessárias para tornar estes modelos independentes de ajustes experimentais, possibilitando assim a otimização dos dispositivos antes de sua fabricação. Estas simulações foram comparadas com os dados experimentais de amostras desenvolvidas em nosso laboratório para avaliar a qualidade do sistema de aquisição de curvas I x V recém-instalado, bem como dos dispositivos desenvolvidos. Analisando os resultados experimentais e teóricos, foi possível ainda identificar os diferentes regimes de transporte em cada temperatura e tensão aplicada. / In this work, we analyzed the most common models of the literature aiming to describe the dark current in quantum well based photodetectors (QWIPs), making the necessary changes to make them independent of experimental data, and enabling thus the optimization of the devices before they are fabricated. These simulations were compared to experimental data of sample grown in our laboratory to evaluate the quality of the I-V curve acquisition system recently installed, as well as the performance of the new devices being produced. By analyzing the experimental and theoretical results, it was still possible to identify the different transport regimes at each temperature and applied voltage.

Este trabalho apresenta o resultado de investigações sobre efeitos de spin em amostras de poços quânticos simples e duplos de AlGaAs, crescidos em substratos de GaAs por MBE - Molecular Beam Epitaxy. O estudo se concentra na variação do fator g de Landé ao longo da estrutura dos poços, a qual ocorre em virtude da dependência dessa grandeza, com respeito ao conteúdo de Al na liga AlGaAs. Através de cálculos autoconsistentes foram encontradas a distribuição eletrônica nos poços e a penetração da densidade eletrônica nas barreiras. Os cálculos se basearam em valores de densidade superficial de elétrons ns medidos experimentalmente em diversas amostras através de medidas de Hall e Shubnikov-de Haas. O estudo permitiu a determinação do valor esperado do fator g de Landé, em função do deslocamento da densidade eletrônica dentro dos poços devido `a ação de campos elétricos externos arbitrário. Também foi estudada a influência do tunelamento da densidade eletrônica dos poços. / In this work we presents the results of our investigations concerning MBE grown AlGaAs/GaAs single and double quantum well samples. We focused on the variation of the Land´e g factor along the structure of the quantum wells, which occur as a consquence of its dependence on the Al content on the alloy AlGaAs. The electronic distribution on the wells and the penetration of the eletronic density into the barriers of the samples were found through selfconsistent calculations. The calculations were based on the eletronic sheet density ns measured through Hall and Shubinikov-de Haas efects. This research allowed the determination of the expected value of the Landé g-factor, as a function of the displacement of the electronic state inside the wells due to an arbitrary external electric field action. Also the influence of the tunneling effects was also studied.

Neste trabalho estudamos as estruturas e as mobilidades eletrônicas em um sistema quase-bidimensional de poços quânticos parabólicos de AlxGa1-xAs dopados. Obtemos as auto-energias, as funções de onda e os perfis dos potencias de confinamento efetivo no sistema, através das soluções numéricas das equações de Schrödinger e de Poisson de forma autoconsistente. Em particular, estudamos as mobilidades quânticas e de transporte nestes sistemas. Devido a ocupação de várias subbandas nestes sistemas, as contribuições dos espalhamentos inter-subbandas para as mobilidades têm a mesma importância que os espalhamentos intra-subbandas. Obtemos as mobilidades de cada subbanda devido aos espalhamentos por impurezas doadoras e aceitadoras ionizadas e por potencial de liga. Analisamos os efeitos das distribuições de doadores dopados, de aceitadores de fundo e do potencial de gate externo / In this work we study the electronic structure and electron mobilities in doped wide parabolic quantum wells of AlxGa1-xAs. The subband energies, the wavefunctions, and the effective confining potential profile are obtained by studying selfconsistently the coupled Schrödinger and Poisson equations. Based on the numerical results of the electronic structure, we calculate the quantum and transport mobilities of the system. Usually several subbands are occupied in such systems and they are strongly coupled to each other, the intersubband interaction shows the same importance as the intrasubband one to the electronic transport. We study and analyze the electron mobility of each subband due to the ionized donor scattering and the alloy scattering. We also show the effect of ionized background acceptor impurity scattering