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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Composites multiferroïques pour dispositifs magnéto-électriques intégrés / Multiferroic composites for integrated magnetoelectric devices

Lebedev, Gor 21 September 2012 (has links)
Ce travail de thèse porte sur l'étude de composites magnétoélectriques laminaires dans le but de réaliser des dispositifs innovants intégrés sur silicium tel que l'inductance RF variable. Grâce au couplage mécanique entre des couches adjacentes magnétostrictive ultra douce et piézoélectrique, il est possible d'obtenir un couplage magnétoélectrique indirect qui est supérieur de plusieurs ordres de grandeur à celui des matériaux multiferroïques naturels. Dans un premier temps, nous avons utilisé l'approche phénoménologique basée sur les énergies pour décrire le panorama des effets attendus dans des composites magnétoélectriques laminaires (multicouches). Ensuite, des composites magnétoélectriques macroscopiques à base de substrats piézoélectriques de type MFC et de couches minces de FeCoB ont été réalisés. L'étude du couplage magnétoélectrique en fonction de la composition de FeCoB a permis de déterminer les propriétés clés des matériaux, notamment le rapport λs/Ms, qui sont essentielles pour obtenir un effet magnétoélectrique élevé. Un coefficient magnétoélectrique record de 250 V∙cm‐1Oe‐1 a été obtenu. Par ailleurs, un microscope à effet Kerr a été spécialement développé pour pouvoir observer de manière quasi-instantanée la modification de la structure en domaines sous l'effet de la tension électrique dans ces composites. Pour la première fois, l'observation directe de la rotation de l'axe facile d'aimantation sous commande électrique a été réalisée. La deuxième partie de ce manuscrit est consacrée à la conception, simulation, fabrication et caractérisation d'un dispositif MEMS hybride d'inductance variable intégrée. Ce dispositif exploite l'effet magnétoélectrique indirect entre un élément moteur en PZT (sol gel) et un élément inductif à base de FeCoB. Etant donné le caractère multiphysique hors norme de ce dispositif, un ensemble de tests électriques, mécaniques, optiques et magnétiques a été déployé tout au long de la fabrication. Les résultats concluent à une preuve de concept partiellement fonctionnelle en raison principalement d'une mauvaise gestion des contraintes internes liées à la fabrication. Les pistes d'amélioration aux niveaux du design, des matériaux et des procédés sont identifiées. / This work is focused on the study of laminated magnetoelectric composites aiming at the realization of novel components integrated on silicon, such as variable inductors. Thanks to the mechanical coupling between two adjacent layers of ultra-soft magnetostrictive and piezoelectric materials it is possible to obtain an indirect magnetoelectric effect which is several orders of magnitude higher than in natural multiferroics. Firstly, we used an energy-based phenomenological approach to describe a range of expected effects in such laminated magnetoelectric composites. Thereupon, macroscopic magnetoelectric composites based on piezoelectric MFC substrates and magnetostrictive thin films of FeCoB were realized. The study of the magnetoelectric coupling vs. FeCoB composition leads to the identification of the key material parameters, such as λs/Ms, that are essential for high magnetoelectric effect. A record magnetoelectric coefficient of 250 V∙cm‐1Oe‐1 is obtained. In parallel, a specific Kerr effect microscope devoted to live observation of the magnetic domains change vs. applied electrical field was developed. For the first time, direct observation of the magnetic easy-axis rotation with voltage in such composites is reported. The second part of this work concerns the design, simulation, fabrication and characterization of a hybrid MEMS variable inductor. This device exploits the indirect magnetoelectric effect between a PZT sol gel driving element and a FeCoB-based inductive element. The unusual multi-physics nature of the device prompted us to deploy a set of electrical, mechanical, optical and magnetic tests throughout the manufacturing. The results conclude with partially functional proof of concept, mainly due to the lack of management of internal stress during the fabrication. Areas for improvement of design, materials and process are identified.
2

3D Coating of Interface Materials for High-Performance RF Passive Devices / 3D-beläggning av gränssnittsmaterial för högpresterande RF-passiva enheter

Shen, Xiner January 2023 (has links)
The demand for high-performance Radio Frequency (RF) passive devices has been steadily increasing due to the growing complexity and sophistication of wireless communication systems. The Quality factor (Q-factor) is a key parameter for describing the signal losses and the energy efficiency of resonators. Previous studies have been done on the spin coating technique of intermediate coating, which presented some limitations in terms of 3D resonators. In this master thesis, we investigate the development of a intermediate layer using dip coating to enhance the Q-factor, i.e., the performance of RF passive devices. The dip coating method is applied to add a nano ceramic coating to the 3D structure as the intermediate layer between the resonator ceramic substrate and the conductive silver coating. After the fabrication process, the samples are observed under Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) and tested with Vector Network Analysis (VNA). Analysis and calculations are mainly conducted with the software Matlab and Gwyddion. The proposed technique improves the smoothness of the samples by 78.95%, and the Q-factor is tested to have a 20.87% enhancement using VNA. The results demonstrate that the intermediate layer with the dip coating technique significantly improves the performance of RF passive devices by reducing the roughness of the resonator surface. These findings open up new opportunities for the design and development of high-performance RF passive devices in various applications, including wireless communication systems, radar systems, and satellite communication. Further studies can be carried out to reduce defects during fabrication and to stabilize the performance of the silver coating. / Efterfrågan på högpresterande passiva RF-enheter har stadigt ökat på grund av den växande komplexiteten och sofistikeringen hos trådlösa kommunikationssystem. Q-faktorn är en viktig parameter för att beskriva signalförluster och energieffektivitet hos resonatorer. Tidigare studier har gjorts på spin coating-tekniken för intermediära beläggningar, vilket presenterade vissa begränsningar för 3D-resonatorer. I denna masteruppsats undersöker vi utvecklingen av ett intermediärt lager med hjälp av doppbeläggning för att förbättra Q-faktorn, det vill säga prestandan hos passiva RF-enheter. Doppbeläggningstekniken tillämpas för att lägga till en nanokeramisk beläggning på 3D-strukturen som intermediärt lager mellan resonatorns keramiska substrat och den ledande silverbeläggningen. Efter tillverkningsprocessen observeras proverna med SEM och AFM och testas med VNA. Analys och beräkningar utförs främst med programvaran Matlab och Gwyddion. Den föreslagna tekniken förbättrar provernas släthet med 78.95%, och Q-faktorn testas och visar en förbättring med 20.87% med hjälp av VNA. Resultaten visar att det intermediära lagret med doppbeläggningstekniken signifikant förbättrar prestandan hos passiva RF-enheter genom att minska ojämnheten på resonatorns yta. Dessa resultat öppnar upp nya möjligheter för design och utveckling av högpresterande passiva RF-enheter inom olika tillämpningsområden, inklusive trådlösa kommunikationssystem, radarssystem och satellitkommunikation. Ytterligare studier kan genomföras för att minska defekter under tillverkningen och stabilisera prestandan hos silverbeläggningen.
3

Design and characterization of monolithic microwave integrated circuits in CMOS SOI technology for high temperature applications

El Kaamouchi, Majid 24 September 2008 (has links)
Silicon-on-Insulator (SOI) CMOS technology constitutes a good candidate for mixed signal RF CMOS applications. Due to its low junction capacitance and reduced leakage current, SOI provides reduced static and dynamic power consumption of the digital logic combined with increased cut-off frequencies. Moreover, in terms of passive device integration the major benefit of SOI when compared to the conventional bulk is the possibility to use a high resistivity substrate which allows a drastic reduction of substrate losses allowing a high quality factor of the passive devices. Another issue is the harsh environment applications. Electronics capable of operating at high temperatures are required in several industrial applications, including the automobile industry, the aerospace industry, the electrical and nuclear power industries, and the well-logging industry. The capability of SOI circuits to expand the operating temperature range of integrated circuits up to 300°C has been demonstrated. SOI devices and circuits present advantages in this field over bulk counterparts such as the absence of thermally-activated latch up and reduced leakage current. In this context, various topologies of integrated transmission lines and spiral inductors implemented on standard and high substrate resistivities have been analyzed over a large temperature range. The temperature behavior of the SOI transistors is presented. The main figures-of-merit of the SOI MOSFETs are analyzed and the extraction of the extrinsic and intrinsic parameters of the small signal equivalent circuit is performed. Also, an example of RF circuit applications of the SOI technology, based on a fully integrated Low-Noise Amplifier for low-power and narrow-band applications, is investigated and characterized at high temperature. The main figures-of-merit of the designed circuit are extracted and discussed. The good results show that the SOI technology is now emerging as a good candidate for the realization of analog integrated circuits for low-power and high-temperature applications.

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