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Architectures d'intégration mixte monolithique-hybride de cellules de commutation de puissance sur puces multi-pôles silicium et assemblages optimisés / Mixed monolithic-hybrid integration of power switching cells on multi-terminal silicon chips and optimized assembliesLale, Adem 07 December 2017 (has links)
Actuellement, le module de puissance (convertisseur de puissance) standard hybride 2D est la technologie de référence qui domine le marché de la moyenne et de la forte puissance. Ce dernier se présente sous la forme d'un boitier à multi-puces discrètes. Les puces à semi-conducteur sont reliées entre elles par des faisceaux de wire-bonding (câblage par fils) pour former des cellules de commutation. La technologie d'interconnexion wire-bonding présente une grande maturité technologique, et ses modes de défaillance sont bien connus aujourd'hui. Toutefois, cette technologie est un facteur limitant en termes de performances électrique et thermomécanique, d'intégrabilité tridimensionnelle et de productivité. Ces travaux de thèse ont pour objectif de proposer et d'étudier de nouvelles architectures de convertisseurs de puissance très intégrés. Comparée à la technologie hybride, dite de référence, les architectures proposées visent à un degré d'intégration plus poussé, avec un effort d'intégration partagé et conjoint au niveau semi-conducteur (intégration monolithique) et au niveau assemblage (intégration hybride). L'intégration monolithique consiste à intégrer les interrupteurs formant les cellules de commutation dans de nouvelles architectures de puces, passant ainsi de la notion de puce dipôle à celle de macro-puce multi-pôle. L'intégration hybride repose sur le développement de nouvelles technologies de report et d'assemblage de ces macro-puces. Pour valider les trois nouvelles architectures d'intégrations proposées, la démarche a consisté dans un premier temps à étudier et valider le fonctionnement des nouvelles puces par des simulations SentaurusTM TCAD. Ensuite, les puces multi-pôles ont été réalisées en s'appuyant sur la filière IGBT disponible dans la plateforme de micro-fabrication du LAAS-CNRS. Pour finir, les puces ont été reportées sur des cartes PCB, afin de réaliser des circuits de conversions prototypes. La maille de commutation très intégrée proposée présente une inductance parasite inférieure au nanohenry, ce qui est remarquable comparée à ce qui est présenté dans l'état de l'art (env. 20 nH). / Currently, the standard 2D hybrid power module (power converter) is the reference technology for the medium and high power market. This hybrid power module is a discrete multi-chip case. The semi-conductor chips are interconnected by wire-bonding to form switching cells. The wire-bonding interconnection technology is a limiting factor in terms of electrical and thermomechanical performances, three-dimensional integrability and productivity. The aim of this thesis is to study new architectures of very integrated power converters. Compared to the so-called hybrid reference technology, the proposed architectures aim at a greater degree of integration, with an integration at both the semi-conductor level (monolithic integration) and the packaging level (hybrid integration). Monolithic integration consists in integrating switching cells into new multi-terminal macro-chip architectures. Hybrid integration consists in developing of new technologies to assemble these macro-chips. To validate the different proposed integration architectures, the first step was to study and validate the operating modes of the new chips by SentaurusTM TCAD simulations. Then, the multi-terminal chips were realized in the micro and nanotechnology platform of LAAS-CNRS laboratory. Finally, the chips were bonded on PCB substrates to realize power converter circuit prototypes. The highly integrated switching loop presents a stray inductance loop lower than one nanohenry, wich is an important improvement as compared to the values reported in literature (about 20 nH).
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New gate drive unit concepts for IGBTs and reverse conducting IGBTsLizama Arcos, Ignacio Esteban 27 November 2017 (has links) (PDF)
This work presents different novel gate drive unit (GDU) concepts for IGBT and reverse conducting IGBT (RC-IGBT). They have been experimentally tested with medium voltage class IGBT modules (1200...1700V/650…1400A) and a RC-IGBT module (1200V/200A). The switching behaviour of the RC-IGBT was investigated, and a new trigger pulse pattern to drive the RC-IGBT was developed, designed and implemented. The experimental results showed that the switching losses were reduced by 20% in the RC-IGBT compared to the switching losses of a standard diode.
Two novel schemes are introduced to estimate the collector current through the IGBT, based on the measurement of the voltage across the internal stray inductance of the IGBT module. Furthermore, a GDU concept was derived to balance the on-state collector currents of parallel-connected IGBTs, reducing the current imbalance to 5%. Also, a new fast short circuit protection method (FSCP) for IGBT modules was developed, designed and implemented in another GDU, allowing turning-off the considered IGBT in less than 1μs, reducing the IGBT stress. Another scheme implemented in a GDU features an improved gate current switching profile of the IGBT, which reduces the switching losses by 25% compared to the standard switching method. In order to reduce the conduction losses, a GDU with an increased turn-on gate-emitter voltage (larger than 20 V) was investigated. In the investigated IGBT, the on-state losses were reduced by 18% when a gate-emitter voltage of 35V is used compared to when a gate-emitter voltage of 15V is used.
All these new GDU concepts have been implemented with a simple and inexpensive electronic circuitry, which is an important feature for a possible industrial implementation.
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New gate drive unit concepts for IGBTs and reverse conducting IGBTsLizama Arcos, Ignacio Esteban 23 October 2017 (has links)
This work presents different novel gate drive unit (GDU) concepts for IGBT and reverse conducting IGBT (RC-IGBT). They have been experimentally tested with medium voltage class IGBT modules (1200...1700V/650…1400A) and a RC-IGBT module (1200V/200A). The switching behaviour of the RC-IGBT was investigated, and a new trigger pulse pattern to drive the RC-IGBT was developed, designed and implemented. The experimental results showed that the switching losses were reduced by 20% in the RC-IGBT compared to the switching losses of a standard diode.
Two novel schemes are introduced to estimate the collector current through the IGBT, based on the measurement of the voltage across the internal stray inductance of the IGBT module. Furthermore, a GDU concept was derived to balance the on-state collector currents of parallel-connected IGBTs, reducing the current imbalance to 5%. Also, a new fast short circuit protection method (FSCP) for IGBT modules was developed, designed and implemented in another GDU, allowing turning-off the considered IGBT in less than 1μs, reducing the IGBT stress. Another scheme implemented in a GDU features an improved gate current switching profile of the IGBT, which reduces the switching losses by 25% compared to the standard switching method. In order to reduce the conduction losses, a GDU with an increased turn-on gate-emitter voltage (larger than 20 V) was investigated. In the investigated IGBT, the on-state losses were reduced by 18% when a gate-emitter voltage of 35V is used compared to when a gate-emitter voltage of 15V is used.
All these new GDU concepts have been implemented with a simple and inexpensive electronic circuitry, which is an important feature for a possible industrial implementation.
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