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Metal/semiconductor interfaces, particularly those involving Si, are of great technological and scientific interest. In atomically abrupt interfaces, many properties are determined by interatomic interactions over a few layers, i.e., over ~1 nanometer. The initial stages of growth of an atomic layer related to structural and electronic properties are thus important to thin film behavior. Surface science studies on metal-semiconductor systems often lead to contradictory conclusions regarding bonding sites and even whether the first layer is metallic or not. A key piece of information that must be consistent with any study is the number of atoms per unit area in the first layer, which is difficult to assess directly. Alkali-metal-semiconductor systems have been studied as model abrupt interfaces for several years. Novel effects, such as electron localization, were observed. Still, determinations of absolute coverage have been lacking. This dissertation describes results of absolute coverage measurements for Cs on Si(100)(2X1), Si(111)(7X7), and Si (111)(v3 X v3)R30°-B reconstructed surfaces using Rutherford Backscattering Spectrometry in ultrahigh vacuum. The results bracket possible structural models for these systems. For the Cs/Si(111)(v3 X v3)R30°-B interface, this work confirms conclusions regarding electron localization effects and introduces considerations of ion-beam-induced desorption for the weakly-bound Cs

The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated. Mostly the focus of this work is on the determination of the proper deposition conditions for tuning the composition of the systems investigated. For the GeOx/SiO2 multilayers this involves changing the GeOx composition between elemental Ge (x = 0) and GeO2 (x = 2), whereas for the Ge:SiOx~ 2/SiO2 multilayers this involves changing the stoichiometry of the Ge:SiOx~ 2 sublayers in the vicinity of stochiometric silica (x = 2). The deposition conditions are controlled by the variation of the deposition rate, the deposition temperature and the oxygen partial pressure. A convenient process window has been found which allows the sequential deposition of GeOx/SiO2 or Ge:SiOx ~2/SiO2 without changing the oxygen partial pressure during deposition. For stoichiometry determination Rutherford back-scattering spectrometry has been applied extensively. The phase separation in the spatially confined GeOx and Ge:SiOx ~2 sublayers was investigated by X-ray absorption spectroscopy at the Ge K-edge. The Ge sub-oxides content of the as-deposited multilayers diminishes with increasing annealing temperature, showing complete phase separation at approximately 450° C for both systems (using inert N2 at ambient pressure). With the use of chemical reducing H2 in the annealing atmosphere, the temperature regime where the GeOx phase separation occurs is lowered by approximately 100 °C. At temperatures above 400° C the sublayer composition, and thus the density of the Ge nanocrystals, can be altered by making use of the reduction of GeO2 by H2. The Ge nanocrystal formation after subsequent annealing was investigated with X-ray scattering, Raman spectroscopy and electron microscopy. By these methods the existence of 2 - 5 nm Ge nanocrystals at annealing temperatures of 550 (GeOx) - 700° C (Ge:SiOx ~2) has been confirmed which is within the multilayer stability range. The technique used allows the production of extended multilayer stacks (50 periods ~ 300 nm) with very smooth interfaces (roughness ~ 0.5 nm). Thus it was possible to produce Ge nanocrystal layers with ultra-thin SiO2 separation layers (thickness ~ 1 nm) which offers interesting possibilities for charge transport via direct tunneling.

The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated. Mostly the focus of this work is on the determination of the proper deposition conditions for tuning the composition of the systems investigated. For the GeOx/SiO2 multilayers this involves changing the GeOx composition between elemental Ge (x = 0) and GeO2 (x = 2), whereas for the Ge:SiOx~ 2/SiO2 multilayers this involves changing the stoichiometry of the Ge:SiOx~ 2 sublayers in the vicinity of stochiometric silica (x = 2). The deposition conditions are controlled by the variation of the deposition rate, the deposition temperature and the oxygen partial pressure. A convenient process window has been found which allows the sequential deposition of GeOx/SiO2 or Ge:SiOx ~2/SiO2 without changing the oxygen partial pressure during deposition. For stoichiometry determination Rutherford back-scattering spectrometry has been applied extensively. The phase separation in the spatially confined GeOx and Ge:SiOx ~2 sublayers was investigated by X-ray absorption spectroscopy at the Ge K-edge. The Ge sub-oxides content of the as-deposited multilayers diminishes with increasing annealing temperature, showing complete phase separation at approximately 450° C for both systems (using inert N2 at ambient pressure). With the use of chemical reducing H2 in the annealing atmosphere, the temperature regime where the GeOx phase separation occurs is lowered by approximately 100 °C. At temperatures above 400° C the sublayer composition, and thus the density of the Ge nanocrystals, can be altered by making use of the reduction of GeO2 by H2. The Ge nanocrystal formation after subsequent annealing was investigated with X-ray scattering, Raman spectroscopy and electron microscopy. By these methods the existence of 2 - 5 nm Ge nanocrystals at annealing temperatures of 550 (GeOx) - 700° C (Ge:SiOx ~2) has been confirmed which is within the multilayer stability range. The technique used allows the production of extended multilayer stacks (50 periods ~ 300 nm) with very smooth interfaces (roughness ~ 0.5 nm). Thus it was possible to produce Ge nanocrystal layers with ultra-thin SiO2 separation layers (thickness ~ 1 nm) which offers interesting possibilities for charge transport via direct tunneling.:Contents 1 Introduction and motivation 1 2 Basic aspects 6 2.1 Microstructure of sub-stoichiometric oxides (SiOx, GeOx) 6 2.2 Phase transformations 9 2.3 Quantum confinement effect in nanocrystals 12 2.4 Applications of nanostructures in 3rd generation photovoltaics 17 3 Experimental setup 21 3.1 The magnetron deposition chamber 21 3.2 (Reactive) dc sputtering 22 3.3 Annealing processing 26 3.4 X-ray facilities 26 4 Analytical methods 30 4.1 Rutherford backscattering spectrometry (RBS) 30 4.2 Raman scattering 33 4.3 (Grazing incidence) X-ray diffraction (GIXRD) 35 4.4 X-ray reflectivity (XRR) 39 4.5 X-ray absorption near edge structure (XANES) 41 4.6 Transmission electron microscopy (TEM) 42 5 Properties of reactive dc magnetron sputtered Si-Ge-O (multi)layers 44 5.1 Deposition rate and film stoichiometry investigations 44 5.2 Stoichiometry dependent properties of GeOx/SiO2 multilayers 47 5.3 Lateral intercluster distance of the Ge nanocrystals in multilayers 51 6 Confined Ge nanocrystal growth in GeOx/SiO2 multilayers 54 6.1 Phase separation in GeOx single layers and GeOx/SiO2 multilayers 54 6.2 Crystallization in GeOx single layers and GeOx/SiO2 multilayers 58 6.3 Multilayer stability and smallest possible Ge nanocrystal size 60 6.4 Stacked Ge NC films with ultra thin SiO2 separation layers 66 7 Confined Ge nanocrystal growth in Ge:SiOx/SiO2 multilayers 71 7.1 Phase separation in Ge:SiOx/SiO2 multilayers 72 7.2 Crystallisation in Ge:SiOx/SiO2 multilayers 76 8 Summary and conclusions 79 List of Figures 83 List of Tables 85 Bibliography 86

The oeuvre of the Irish poet, novelist, playwright and essayist Eugene Rutherford Watters (later publishing under the name Eoghan Ó Tuairisc), who wrote both in English and Irish, has been mostly neglected by literary criticism. This thesis focuses on Watters' ambitious long modernist poem The Week-End of Dermot and Grace (1964), which has so far received only perfunctory critical treatment. Formally, The Week-End shows clear affinities with the works of high modernism (especially with the poetry of T.S. Eliot), especially in terms of poly- and multivocal qualities of Watters' overtly allusive language and the liberal employment of wide-ranging intertextual references. On the thematic level, the poem centres around Watters' preoccupation with the dropping of the first atomic bomb on Hiroshima on 6th August 1945 by the American forces, a momentous event that impelled the poet to questions about faith, civilisation, technology, and collective guilt in the context of the Irish neutral stance during the Second World War. Reflections on Hiroshima also led him to contemplate the role of the poet and poetry in the modern "atomic age". Given the aforementioned qualities of the work, the method chosen for the analysis consists of a close reading of the poem in the light of the historical, literary, and...

Made available in DSpace on 2016-04-28T14:16:43Z (GMT). No. of bitstreams: 1 Cesar Valmor Machado Lopes.pdf: 842950 bytes, checksum: 89254b42f8824733249497f87b4244e3 (MD5) Previous issue date: 2009-10-23 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / The present research examines the history of atomic models in the early twentieth century dealing with the contributions of Joseph John Thomson, Hantaro Nagaoka, Ernest Rutherford, John William Nicholson and Niels Bohr and his contemporaries. It emphasizes the explanations from the classical physics till the introduction of the Quantum Theory. This thesis presents an introduction and eight chapters. Chapter 1 presents the investigations which took place before the proposition of the models pointed out in the first paragraph. This chapter emphasizes the classical science, without diving into the quantum explanations. The next six chapters present a chronological sequence of biographies, ideas and publications and discuss the atomic models proposed by the quoted scientists. The publication of the papers on the quantized atom models had great impact and caused many debates, which led us to produce a specific chapter dealing with such subject. . In conclusion, the chapter eight presents some considerations about the integration of the investigative trails that led to the publication of the atomic models discussed, the work on investigative borders fields, the intricate dynamics of power between fields, scientists and publications, and the assertion of new fields / Esta pesquisa analisa a história dos modelos atômicos no início do século XX a partir das contribuições de Joseph John Thomson, Hantaro Nagaoka, Ernest Rutherford, John William Nicholson e Niels Bohr e seus contemporâneos, enfatizando as explicações desde a Física Clássica até a introdução da Teoria Quântica. A tese apresenta uma introdução e oito capítulos. O primeiro capítulo procura dar conta do estado da arte antes da proposição dos modelos discutidos. Neste capítulo enfatizamos questões que se localizam no campo da ciência clássica, sem mergulhar no campo da teoria quântica nascente. Na continuidade, apresentamos seis capítulos, cronologicamente organizados com uma breve biografia de cada um dos cientistas mencionados e o detalhamento das idéias e dos episódios científicos que levaram às publicações que apresentaram seus modelos pela primeira vez. A publicação dos modelos de átomo quantizados teve grande impacto e suscitou muitos debates, o que nos levou a produzir o capítulo sete tratando especificamente desses embates. Para concluir no capítulo oito apresentamos algumas considerações sobre a integração das diversas trilhas investigativas que levam à publicação dos modelos atômicos discutidos; ao trabalho nas fronteiras de campos investigativos diversos; à intrincada dinâmica de poder entre campos, cientistas e publicações; e à afirmação de novos campos

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No. of bitstreams: 1 CAROSSI_Lory_2017.pdf: 61131706 bytes, checksum: 687def06b5a758fcb457d49f53a494b1 (MD5) Previous issue date: 2015-02-11 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Nanoporous anodic alumina films (NAA) may present different behavior to reflectance and photoluminescence techniques, with Fabry-Pérot interferences and waveguide properties. This phenomenon makes possible the use of NAA as transducer signal in optical sensors. In this work, we investigated how the pre-treatment, the number of steps of anodizing, the anodizing electrolyte mode and temperature affect electrochemical characteristics, morphological and optical mainly NAA. As a result, it was noticeable that the realization of electropolishing is necessary for both the NAA with good regularity as to make it possible to obtain a spectrum with the Fabry-Pérot interference. If the fabrication of NAA is done in two steps, it is possible to obtain reflectance spectra and luminescence fringed with better amplitudes, areas and heights. Regarding the anodizing mode, both the NAA anodized in galvanostatic how potentiostatic showed similar morphologies and spectra with fringes, but the interferences were better defined when the galvanostatic mode was performed. Regarding the temperature, it was noticeable that the change of this parameter leads influences the porous oxide thickness. The spectrum of the luminescence and reflectance increasing the electrolyte temperature caused an increase in interference. However, the range and resolution of interference decreased with increasing temperature. The oxide thicknesses were estimated by energy variation (?E), graph slope between order and 1/? and fast Fourier transform (FFT) techniques. The ratio of film thickness and pore diameter (L/dp) was performed to validate the NAA films with better waveguides property. Moreover, the surface composition analysis of NAA films anodized in phosphoric acid, oxalic acid and mixtures thereof by backscattering spectroscopy Rutherford (RBS) was performed. From simulations it was possible to note that the amount of carbon in the porous oxide structure is practically zero, which may indicate that the origin of the luminescence is related to the presence of more centers F. / Filmes de alumina anódica porosa (AAP) podem apresentar, espectros de reflectância e luminescência com interferências de Fabry-Pérot e propriedades de guias de onda. Esse fenômeno possibilita que a AAP possa ser utilizada como plataforma em sensores ópticos. Neste trabalho, foi investigado como o pré-tratamento, o número de etapas de anodização, o modo de anodização e a temperatura do eletrólito afetam características eletroquímicas, morfológicas e principalmente ópticas da AAP. Como resultado, foi possível notar que a realização do eletropolimento é necessário para obter tanto a AAP com boa regularidade como para que seja possível obter um espectro com as interferências Fabry-Pérot. Se a fabricação da AAP for feita em duas etapas, é possível obter espectros de reflectância e luminescência com franjas com melhores amplitudes, áreas e alturas. Com relação ao modo de anodização, tanto as AAPs anodizadas em modo galvanostático como potenciostático apresentaram morfologias semelhantes e espectros com franjas, mas as interferências foram melhor definidas quando o modo galvanostático foi realizado. Com relação à temperatura, foi possível notar que a mudança desse parâmetro ocasiona influencia na espessura do óxido poroso. Quanto aos espectros de luminescência e reflectância, o aumento da temperatura do eletrólito ocasionou um aumento no número de interferências. Entretanto, a amplitude e a resolução das interferências diminuíram com o aumento da temperatura. A espessura do filme poroso foi estimada pelas técnicas de variação de energia (?E), coeficiente angular do gráfico entre ordem da interferência e 1/? e através da transformada rápida de Fourier (FFT). E foi utilizada a razão entre a espessura do filme e diâmetro do poro (Esp/Dp) para averiguar os filmes de AAP com guias de onda que pudessem ser utilizadas como substratos para sensores ópticos. Além disso, foi realizada a análise de composição superficial dos filmes de AAP anodizados em ácido fosfórico, oxálico e mistura destes ácidos pela técnica de espectroscopia de retroespalhamento de Rutherford (RBS). A partir das simulações realizadas foi possível notar que a quantidade que carbono na estrutura do oxido poroso é praticamente nula, o que pode indicar que a origem da luminescência está relacionada à presença dos centros F.

A instabilidade térmica do óxido de germânio (GeO2) é um obstáculo à utilização de germânio (Ge) como material semicondutor em dispositivos MOSFET. Essa instabilidade é induzida por vacâncias de oxigênio originadas de uma reação interfacial entre o óxido e o substrato. Essas vacâncias são responsáveis pela dessorção de GeO da superfície do óxido e pela deterioração das propriedades elétricas do transistor. Estudos sugerem que a incorporação de nitrogênio no GeO2 aumenta a sua estabilidade. Nesta dissertação, filmes de oxinitreto de germânio (GeOxNy) foram crescidos termicamente sobre Ge, utilizando gás óxido nítrico (NO), em um forno aquecido resistivamente. Técnicas de análise por feixe de íons, como espectrometria de retroespalhamento Rutherford e análise por reações nucleares, foram utilizadas para investigar o transporte atômico durante o crescimento dos filmes e o papel do nitrogênio na estabilização do óxido. Para a determinação da espessura, da densidade e da rugosidade de alguns filmes, foram realizadas medidas de reflectometria de raios X. Os resultados mostram que a incorporação de uma pequena quantidade de nitrogênio resulta em uma diminuição substancial na dessorção de GeO e na formação de uma barreira eficiente contra a oxidação adicional do substrato. Átomos de nitrogênio incorporados na estrutura do óxido podem reduzir a difusividade das vacâncias de oxigênio, levando ao aumento da estabilidade térmica. / The thermal instability of germanium oxide (GeO2) hinders the use of germanium (Ge) as the semiconductor material in MOSFET devices. This instability is induced by oxygen vacancies originated from the interfacial reaction between the oxide and the substrate. These vacancies are responsible for GeO desorption from the oxide surface and deterioration of the device’s eletrical properties. Previous studies suggest that nitrogen incorporation increases the oxide’s stability. In this dissertation, germanium oxynitride (GeOxNy) films were thermally grown on Ge using nitric oxide (NO) gas, in a conventional resistively heated furnace. Ion beam analysis tecniques, such as Rutherford backscattering spectrometry and nuclear reaction analysis, were used to investigate atomic transport during thermal growth and the role of nitrogen in the improved stability. Film thickness, density and roughness were obtained through X-ray reflectometry. Results show that the incorporation of a small amount of nitrogen yields a substantial decrease in GeO desorption and the formation of a strong barrier against further oxidation of the substrate. Nitrogen atoms incorporated into the oxide structure may decrease oxygen vacancy diffusivity, leading to enhanced thermal stability.

De maneira a melhorar o desempenho de um Transistor de Efeito de Campo Metal-Óxido-Semicondutor (MOSFET), o germânio (Ge) é um forte candidato para substituir o silício (Si) como semicondutor, devido a sua alta mobilidade dos portadores de carga. Contudo, o filme de dióxido de germânio (GeO2) sobre Ge é solúvel em água e suas propriedades elétricas inferiores. Nesse sentido, a proposta desta dissertação de Mestrado é oxinitretar termicamente filmes de GeO2 em atmosfera de óxido nítrico (15NO), de maneira a melhorar as propriedades elétricas e físico-químicas dessas estruturas. Inicialmente, as amostras foram limpas quimicamente usando uma mistura de peróxido de hidrogênio (H2O2) e ácido clorídrico + água (HCl + H2O, 4:1). Os filmes de GeO2 foram crescidos termicamente sobre Ge usando atmosfera de oxigênio enriquecido 97% no isótopo de massa 18 (18O), com parâmetros na qual geraram um filme com espessura de ~5 nm. As oxinitretações foram realizadas em um forno térmico rápido com atmosfera de 15NO, nas temperaturas variando de 400-600°C, nos tempos de 1 a 5 minutos. O objetivo da oxinitretação foi criar um filme de oxinitreto de germânio (GeOxNy) com propriedades físico-químicas satisfatórias para a indústria de microeletrônica. Também foram realizados recozimentos térmicos em atmosfera inerte com objetivo de testar a estabilidade térmicas dos filmes de GeOxNy. Análise com Reação Nuclear (NRA) e Espectrometria de Retroespalhamento Rutherford em geometria de canalização (RBS-c) foram utilizadas para quantificar a quantidade total de oxigênio 18O e 16O, respectivamente. NRP também foi utilizada de modo a determinar o perfil de concentração em função da profundidade para as espécies de 18O e 15N. De modo a investigar a composição química das amostras, Espectroscopia de Fotoelétrons induzidos por raio-X (XPS) foi utilizada. Pelas análises por RBS e NRA do 18O, podemos observar que ocorre troca entre os isótopos de 18O e 16O para todas das temperaturas de oxinitretação. Este resultado corrobora com estudos recentes da literatura. Para as amostras oxinitretadas em 5 minutos a 500°C e todas as amostras oxinitretadas a 550°C e 600°C, ocorre troca isotópica completa. Observamos ainda por NRP que o 15N é incorporado mais superficialmente para as temperaturas de oxinitretação até 550°C. Resultados de XPS indicam formação maior de GeOxNy próximos da superfície das amostras e para temperaturas e/ou tempos maiores. Testes de estabilidade térmica indicam que a incorporação de nitrogênio mais próximo das superfície da amostra inibe a dessorção das espécies de GeO. As amostras que não foram oxinitretadas acabam dessorvendo quase por completo o filme de GeO2 quando realizados os recozimentos térmicos. Este efeito do nitrogênio incorporado próximo da superfície tem grande potencial para uso em camadas interfaciais entre semicondutor e dielétricos de porta. / In order to improve the performance of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), germanium is a good candidate to replace silicon as semiconductor due to its higher charge carrier mobility. However, the germanium dioxide (GeO2) film over Ge is water soluble and produces poor electrical characteristics. In this way, this Master dissertation proposes thermal oxinitridation of the GeO2 films in nitric oxide (15NO) atmosphere in order to improve its electrical and physico-chemical characteristics. Samples were first cleaned using a mixture of hydrogen peroxide (H2O2) and hydrogen chloride + water (HCl + H2O, 4:1). GeO2 films were thermally grown on Ge using oxygen enriched in 97% in the isotope of mass 18, which generated ~5 nm thick film. Oxinitridation was performed in a rapid thermal furnace under 15NO atmosphere, at the 400-600°C temperature range, and 1-5 minutes time range. The goal was to form a germanium oxinitride film (GeOxNy) with physico-chemical properties that are satisfactory for microelectronics industry. We also performed thermal annealing in inert atmosphere to test the thermal stability of GeOxNy films. Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectrometry in channeled geometry (RBS-c) were used to quantify the total amount of oxygen 18O and 16O, respectively. NRP was also performed to determine the 18O and 15N depth distribution. In order to investigate the chemical composition of the samples, X-ray Photoelectron Spectroscopy (XPS) was performed. RBS and NRA analysis showed isotopic exchange between 18O and 16O for all temperatures investigated. This result corroborates previous literature studies. Samples oxynitrided in 5 minutes at 500°C and all the samples oxinitrided at 550-600°C showed complete isotopic exchange. We also observed by NRP that nitrogen incorporation occurs more superficially until 550°C. XPS results indicate more formation of GeOxNy near the surface of the samples and for higher temperatures and/or time of oxinitredation. Thermal stability results indicated that the nitrogen incorporation near the sample surface inhibit the GeO desorption. On the other hand, samples that were not oxynitrided have almost all the GeO2 desorbed when thermal annealing is performed.

A instabilidade térmica do óxido de germânio (GeO2) é um obstáculo à utilização de germânio (Ge) como material semicondutor em dispositivos MOSFET. Essa instabilidade é induzida por vacâncias de oxigênio originadas de uma reação interfacial entre o óxido e o substrato. Essas vacâncias são responsáveis pela dessorção de GeO da superfície do óxido e pela deterioração das propriedades elétricas do transistor. Estudos sugerem que a incorporação de nitrogênio no GeO2 aumenta a sua estabilidade. Nesta dissertação, filmes de oxinitreto de germânio (GeOxNy) foram crescidos termicamente sobre Ge, utilizando gás óxido nítrico (NO), em um forno aquecido resistivamente. Técnicas de análise por feixe de íons, como espectrometria de retroespalhamento Rutherford e análise por reações nucleares, foram utilizadas para investigar o transporte atômico durante o crescimento dos filmes e o papel do nitrogênio na estabilização do óxido. Para a determinação da espessura, da densidade e da rugosidade de alguns filmes, foram realizadas medidas de reflectometria de raios X. Os resultados mostram que a incorporação de uma pequena quantidade de nitrogênio resulta em uma diminuição substancial na dessorção de GeO e na formação de uma barreira eficiente contra a oxidação adicional do substrato. Átomos de nitrogênio incorporados na estrutura do óxido podem reduzir a difusividade das vacâncias de oxigênio, levando ao aumento da estabilidade térmica. / The thermal instability of germanium oxide (GeO2) hinders the use of germanium (Ge) as the semiconductor material in MOSFET devices. This instability is induced by oxygen vacancies originated from the interfacial reaction between the oxide and the substrate. These vacancies are responsible for GeO desorption from the oxide surface and deterioration of the device’s eletrical properties. Previous studies suggest that nitrogen incorporation increases the oxide’s stability. In this dissertation, germanium oxynitride (GeOxNy) films were thermally grown on Ge using nitric oxide (NO) gas, in a conventional resistively heated furnace. Ion beam analysis tecniques, such as Rutherford backscattering spectrometry and nuclear reaction analysis, were used to investigate atomic transport during thermal growth and the role of nitrogen in the improved stability. Film thickness, density and roughness were obtained through X-ray reflectometry. Results show that the incorporation of a small amount of nitrogen yields a substantial decrease in GeO desorption and the formation of a strong barrier against further oxidation of the substrate. Nitrogen atoms incorporated into the oxide structure may decrease oxygen vacancy diffusivity, leading to enhanced thermal stability.