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In this thesis first-principles calculations of point and extended defects in diamond and silicon are reported. In single crystal diamond grown by chemical vapour deposition (CVD) dislocations are observed as mixed-type 45° and edge-type dislocations lying along <100> with 1/2<110> Burgers vectors. Results are presented on the core structures, core energies and electrical properties of both types of dislocations and their interaction with nitrogen is investigated. Then the focus turns to the brown diamond problem. Despite concerted research efforts, the origin of the brown colouration of diamond is still under discussion. Recently, the attention was drawn to vacancy-related defects. Experiments on type IIa diamonds indicate that the brown colour is caused by vacancy-type extended defects, however the shape and size of these defects remained unclear. In this work, the structural, electrical and optical properties of large spherical vacancy clusters and thin vacancy disks are investigated by means of density functional theory and the calculations are compared with recent experimental measurements on brown diamond. High pressure high temperature treatment (HPHT) of brown type Ia diamonds above 2000°C results in the loss of the brown colour and the formation of nitrogen-vacancy defects. The generation of such defects requires a source of mobile vacancies during the annealing process. It is suggested that the vacancy cluster model described in this thesis can explain the observed annealing behaviour since the break-up of the clusters leads to a supersaturation of mobile vacancies which readily complex with substitutional nitrogen atoms present in the material. Therefore, the effect of HPHT treatment of brown type Ia diamond is investigated by studying the formation energies of common and rare defects and estimates of their equilibrium concentrations at different annealing stages are given. Finally, an open problem also involving nitrogen, but in a different group IV semiconductor is considered. In Czochralski-silicon, nitrogen-related shallow thermal donors are formed between 500 and 750°C. Until now the exact chemical composition and atomic structure of these defects are not well established. Here, it is shown that NO and NO_2 belong to the family of nitrogen-oxygen related shallow thermal donors. Based on the law of mass action the equilibrium defect concentrations are predicted. Finally, the theoretical results are compared to recent Fourier transform infrared (FTIR) spectroscopy measurements.

Approved for Public Release; Distribution is Unlimited / This thesis developed the sample fabrication and experimental design for studying interfacial creep at thin film / Silicon interfaces. The specific interface of study was the crystalline interface created by Positive Vapor deposition of a metallic thin film on a very smooth Silicon substrate. Emphasis was placed on development and refinement of the fabrication techniques necessary to produce test samples that provide valid reproduction of the interfacial stress state in isolation from other stresses inherent in the complete device. Test sample fabrication utilized traditional laboratory methods combined with leading edge methodology in two fabrication steps; namely diffusion bonding of an Silicon substrate / PVD Aluminum thin film / Silicon substrate composite structure and micro-machining Silicon through the use of a TMAH based etchant. In conjunction with the sample development a test platform was designed, fabricated, assembled, and aligned to provide for isolated parametric characterization of the proposed interfacial creep model. The results of this characterization are anticipated to be of significant utility in improving the design for fabrication and reliability of current and next generation microelectronic and microelectro-mechanical devices. / Lieutenant Commander, United States Navy

Solder joints provide both electrical and mechanical interconnections between a silicon chip and the packaging substrate in an electronic application. The thermomechanical cycling in the solder causes numerous reliability challenges, mostly because of the mismatch of the coefficient of thermal expansion between the silicon chip and the substrate. The actual transition to lead-free solders and the trend towards hotter-running, miniaturized and higher current density chips aggravate this situation. Therefore, improved solder joints, with higher resistance to creep and low cycle fatigue, are necessary for future generations of microelectronics. This study focuses on a thermomechanical behavior comparison between monolithic Sn-Ag-Cu, copper fiber and copper ribbon cylindrical reinforced solders. The composite solders were found to reduce the inelastic strain range of the joint relative to monolithic solder, but at the expense of increased stress range.

The American Institute for Manufacturing Integrated Photonics (AIM Photonics) is focused on developing an end- to- end integrated photonics ecosystem in the U.S., including domestic foundry access, integrated design tools, automated packaging, assembly and test, and workforce development. This paper describes how the institute has been structured to achieve these goals, with an emphasis on advancing the integrated photonics ecosystem. Additionally, it briefly highlights several of the technological development targets that have been identified to provide enabling advances in the manufacture and application of integrated photonics.