This thesis details work undertaken over the past three and a half years looking at the optical properties of silicon-on-insulator waveguide arrays and 1D photonic crystal microcavities. Chapter 1 contains relevant background information, while chapters 2, 3 and 4 contain results of experimental work. Chapter 5 summarises the results and conclusions of the preceding chapters and also suggests some directions for possible future research. Chapter 1 starts by introducing some of the fundamental aspects of guided wave optics and how these relate to silicon-on-insulator waveguides. The modes of single,uncoupled silicon waveguides are described, along with a brief description of how such waveguides can be fabricated. Following this a short introduction to optical cavities and the relevant parameters that can be used to describe them is provided. In Chapter 2 results are presented that experimentally confirm the presence of couplinginduced dispersion in an array consisting of two strongly-coupled silicon-on-insulator waveguides. This provides an additional mechanism to tailor dispersion and shows that it is possible to achieve anomalous dispersion at wavelengths where the dispersion of a single wire would be normal. In Chapter 3 the focus switches to the linear properties of 1D photonic crystal microcavities in silicon. The optical transmission of a number of different devices are examined allowing the identification of suitable microcavities for use in nonlinear measurements. Microcavities with Q-factors in excess of ∼40,000 were selected for use in the work presented in Chapter 4, whilst the possibility of thermally tuning the microcavity resonances is also investigated. A cavity resonance shift of 0.0770± 0.0004 nm K-1 is measured experimentally. Chapter 4 looks at the nonlinear transmission of those microcavities identified as suitable in Chapter 3. More specifically, the response of the microcavities to thermal and free carrier induced bistability is considered. Thermally induced bistability is observed at a threshold power of 240 μW for the particular cavity chosen, with a thermal time of 0.6 μs also measured. Free carrier induced bistability is then observed for pulses with nanosecond durations and milliwatt peak powers. Following that, the interplay of thermal and free carrier effects is observed using input pulses of a suitable duration.

The demand for high performance Lithium-ion batteries (LIBs) is increasing due to widespread use of portable devices and electric vehicles. Silicon (Si) is one of the most attractive candidate anode materials for the next generation LIBs because of its high theoretical capacity (3,578 mAh/g) and low operation potential (~0.4 V vs Li+/Li). However, the high volume change (>300%) during Lithium ion insertion/extraction leads to poor cycle life. The goal of this work is to improve the electrochemical performance of Si/C composite anode in LIBs. Two strategies have been employed: to explore spatial arrangement in micro-sized Si and to use Si/graphene nanocomposites. A unique branched microsized Si with carbon coating was made and demonstrated promising electrochemical performance with a high active material loading ratio of 2 mg/cm2, large initial discharge capacity of 3,153 mAh/g and good capacity retention of 1,133 mAh/g at the 100th cycle at 1/4C current rate. Exploring the spatial structure of microsized Si with its advantages of low cost, easy dispersion, and immediate compatibility with the prevailing electrode manufacturing technology, may indicate a practical approach for high energy density, large-scale Si anode manufacturing. For Si/Graphene nanocomposites, the impact of particle size, surface treatment and graphene quality were investigated. It was found that the electrochemical performance of Si/Graphene anode was improved by surface treatment and use of graphene with large surface area and high defect density. The 100 nm Si/Graphene nanocomposites presented the initial capacity of 2,737 mAh/g and good cycling performance with a capacity of 1,563 mAh/g after 100 cycles at 1/2C current rate. The findings provided helpful insights for design of different types of graphene nanocomposite anodes.

Silicon photonics is considered to have the potential to enable future communication systems with optical input-outputs to circumvent the shortcomings of electronics. Today silicon is the material of choice for photonic and optoelectronic circuits, mainly due to its excellent material properties, established processing technology, low-cost, compact device footprint, and high-density integration. From sensing and detection to computing and communications, silicon photonics has advanced remarkably in the last couple of decades and found numerous applications. This thesis work focusses on three novel applications of silicon photonics for optical communications. The first application is the design and demonstration of a differential phase shift keying (DPSK) demodulator circuit using a ring resonator. DPSK-based transceivers are being actively considered for short-haul optical communication systems due to their advantages in terms of high extinction ratio, dispersion tolerance, and improved sensitivity. The ring resonator utilizes the concept of coherent perfect absorption and results into a compact demodulator circuit that can be easily integrated into an all-optical system. The next application involves a nonlinear optical process, namely, four wave mixing (FWM) inside a silicon nanowire. For FWM to occur efficiently, phase matching between the real propagation constants of all the frequency components is a key requirement. However, this condition cannot be easily satisfied in integrated optics semiconductor platforms. We propose an altogether new approach to achieve signal gain within the context of non-Hermitian photonics and parity-time (PT) symmetry and show that the phase matching criterion is not necessary to achieve efficient nonlinear interactions. Instead by introducing losses only to the idler components while leaving the pump and signal waves intact, we analyze a coupled-wave system of silicon nanowires using finite difference time domain technique and find that signal gain is indeed possible in such a system, irrespective of the fulfillment of the phase-matching condition. The final application of silicon photonics in this thesis is the engineering of zero group velocity dispersion (GVD) point in the C-band of communication channel. The problem of pulse broadening due to chromatic dispersion is becoming an increasingly important factor for signal degradation. We propose a hybrid silicon/plasmonic waveguide that can change the zero-GVD point by altering the geometry and material of the waveguide components. In addition, such hybrid system also has the potential to transmit both optical and electronic signals along the same circuitry.

Silicon holds a privileged position in organic chemistry as the carbon-silicon bond can be utilised in many important transformations. As such, developing practical and efficient methods for the enantioselective and regioselective insertion of silicon into organic molecules is a worthy challenge in chemical synthesis. To this end, we have developed an affordable copper-catalysed protocol for the asymmetric silylation of lactones, lactams and amides, providing silylated products with up to > 99:1 er and in good yields. Furthermore, we have demonstrated the synthetic utility of this protocol in the target synthesis of natural or biologically active molecules. We also present the first copper-catalysed silylation of allenes using a silylborane reagent. This affords useful allyl- or vinylsilane building blocks with high regioselectivity, efficiency and a large functional group tolerance. The allylcopper intermediates can be intercepted by aldehydes in a diastereoselective three-component coupling to furnish homoallylic alcohols. We extend this concept to the copper-catalysed three-component coupling of boron, allenes and imines, providing access to homoallylic amines with a vinylborane motif.

Made available in DSpace on 2014-06-11T19:22:15Z (GMT). No. of bitstreams: 0 Previous issue date: 2012-07-25Bitstream added on 2014-06-13T20:09:11Z : No. of bitstreams: 1 sandim_as_me_botfca.pdf: 599328 bytes, checksum: f35bb781317d272828a25845f530bd46 (MD5) / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / Partindo do princípio que a aplicação do silicato pode resultar em aumento na disponibilidade de fósforo no solo para as culturas, objetivou-se estudar a influência da silicatagem, em comparação à calagem, na dessorção de fósforo em solos com fósforo previamente adsorvido, avaliada por dois extratores e pelo crescimento da planta. O delineamento experimental utilizado foi em blocos casualizados, com quatro repetições, em esquema fatorial 3 x 3 x 5 , constituídos por três solos, três doses de fósforo e quatro corretivos de acidez, além de um tratamento sem correção da acidez, totalizando 180 parcelas experimentais. O experimento foi realizado em casa de vegetação, em vasos de 20 L. Os solos foram submetidos a três doses de P, (0, 50 e 150 mg dm-3), tendo como fonte superfosfato triplo em pó e mantidos incubados por 90 dias. Após o período de incubação foram realizadas amostragens, para análise química de rotina e determinações dos teores de P através dos métodos resina, Mehlich 1 e P remanescente. Com base nesses resultados foi realizada a aplicação dos corretivos de acidez calculando-se as doses visando a elevar a 70% o valor de saturação por bases. Os corretivos de acidez utilizados foram: calcário dolomítico, escória de aciaria, escória de aciaria forno de panela, e wollastonita. Após a aplicação dos corretivos, os solos permaneceram incubados por mais 60 dias e novas determinações dos níveis de P foram realizadas. A cultura utilizada foi o milho. Nos solos foram realizadas determinações químicas de P, demais nutrientes e Si. Na planta foram realizadas avaliações de produção de massa seca, acúmulo de nutrientes e de Si e determinação do índice de clorofila. Os dados foram submetidos à análise de variância e as médias dos tratamentos foram comparadas pelo teste Tukey a... / Assuming that the application of silicate can result in increased availability of phosphorus in the soil for crops, aimed to study the influence of silicatagem compared to lime, the desorption of previously adsorbed soil phosphorus as assessed by two extractors and the plant growth. The experimental design was randomized blocks with four replications in a factorial 5 x 3 x 3, consisting of three solos, three and four doses of phosphorus lime acidity, and a treatment without liming, totaling 180 plots . The experiment was conducted in a greenhouse in pots of 20 L. The soils were subjected to three levels of P, (0, 50 and 150 mg dm-3), and triple superphosphate as source powder and kept incubated for 90 days. After the incubation period was sampled for routine chemical analysis and determination of the levels of P by the methods resin, the remaining P and Mehlich 1. Based on these results was performed liming acidity calculating the doses in order to raise the value of 70% saturation. The different lime sources used were limestone, steel slag, steel slag pot furnace, and wollastonite. After liming, the soils were incubated for another 60 days and further determinations of P levels were made. The culture was maize. The soils were subjected to chemical P, Si and other nutrients in the plant were evaluated for dry matter production, nutrient accumulation and determination of Si and chlorophyll content. The data were submitted to ANOVA and treatment means were compared by Tukey test at 5% probability. The slag increased the levels of phosphorus in the soil, when compared to the limestone, suggesting positive interaction between Si and P in the soil. The Mehlich 1 and resin were highly correlated with P extracted and phosphorus uptake by plants, regardless of the soil. For all parameters analyzed in the plant, there was... (Complete abstract click electronic access below)

從上世紀80年代中期開始，矽光子學在研究與工業界都有快速的發展。矽光子學有望實現電子與光子電路的一體化集成，從而使得光電子系統的價格和能耗大大地降低。基於這樣的特性，矽光子學被提出用於當前的光通信系統。 / 在這篇論文中，我們將研究矽波導在光信號的成型和重定時中的應用。首先，我們研究基於自由載流子色散效應的矽調製器。調製器的原理和設計方法將會詳細地討論。我們所設計的調製器是基於馬赫-曾德爾干涉儀。實驗表明，製作好的調製器的3dB電光帶寬達到了5GHz。當調製器進行非歸零開關鍵控調製時，調製器的速率可以達到12.45GHz，且誤碼率在10⁻⁹以下。同時，調製器用於正交頻分複用調製格式的結果也會給出。接著，我們研究矽波導中產生的四波混頻效應如何增強信號消光比和減少時域抖動。我們通過實驗表明了，矽波導中的四波混頻效應可以增強單通道的10和40Gb/s歸零開關鍵控信號的消光比。我們接著將四波混頻效應應用於時域交叉的雙通道歸零開關鍵控信號。實驗結果也表明，兩個通道的消光比都能得到增強。我們也通過實驗表明，四波混頻效應可以減少10Gb/s歸零開關鍵控信號的時域抖動。最後，我們用矽波導和chirped光纖光栅實現了一套可調光延遲系統。當這套系統分別應用於10Gb/s的光脈衝、非歸零開關監控信號和歸零的差分相位鍵控信號時，延遲效果都一致。 / Emerging from the mid-1980s, the field of silicon photonics has been rapidly growing, in both research and industry. Silicon photonics has the great potential of monolithic integration of both electronic and photonic circuits. With monolithic integration, the cost and power consumption of photonic systems can be cut down greatly. Due to these features, silicon photonics is proposed for applications in today’s optical communication systems. / In this thesis, silicon waveguide devices for shaping and retiming of optical signals will be investigated. Firstly, silicon Mach-Zehnder modulators based on free-carrier plasma dispersion effect are explored for amplitude modulation of optical signals. The principle and design of the modulators are discussed in details. Experimental results show that 3 dB electro-optic bandwidth of the modulators is 5 GHz, while 10⁻⁹ bit error rate can be obtained for up to 12.45 Gb/s modulated non-return-to-zero (NRZ) on-off keying (OOK) signal. Also, the results of the modulators for orthogonal frequency division multiplexing modulation will be given. Then, silicon waveguides are used as nonlinear medium of four-wave mixing (FWM) effect for extinction ratio enhancement and timing jitter reduction of optical signals. Extinction ratio enhancement of single channel 10 and 40 Gb/s return-to-zero (RZ) OOK signal is experimentally demonstrated. Following that we extend the scheme for two 40 Gb/s RZ-OOK channels which are time-interleaved and obtain extinction ratio enhancement for both. Timing jitter reduction of 10 Gb/s RZ-OOK signal is also achieved by FWM effect in silicon waveguides. Finally, a tunable delay line incorporating a silicon waveguide and a chirped fiber Bragg grating is realized for timing alignment of optical signals. The tunable delay line is used for 10 Gb/s optical pulse, NRZ-OOK signal and RZ differential phase-shift keying (DPSK) signal, showing consistent performance for all. / Detailed summary in vernacular field only. / Detailed summary in vernacular field only. / Chen, Yimin. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2013. / Includes bibliographical references. / Abstracts also in Chinese. / Acknowledgements --- p.ii / Abstract --- p.iv / Table of Contents --- p.vii / List of Tables --- p.x / List of Figures --- p.xi / Chapter Chapter 1 --- Introduction --- p.17 / Chapter 1.1 --- Research context --- p.17 / Chapter 1.2 --- Waveguides and modulators in silicon photonics --- p.18 / Chapter 1.2.1 --- Silicon photonics --- p.20 / Chapter 1.2.2 --- Silicon modulator --- p.23 / Chapter 1.2.3 --- Silicon waveguide as nonlinear medium --- p.24 / Chapter 1.3 --- Purpose and outline of this work --- p.26 / References --- p.26 / Chapter Chapter 2 --- Silicon modulators for optical communications --- p.28 / Chapter 2.1 --- Introduction --- p.28 / Chapter 2.1.1 --- Motivation for high capacity transmission system --- p.28 / Chapter 2.1.2 --- Literature review of silicon modulators --- p.30 / Chapter 2.2 --- Design of silicon modulators --- p.38 / Chapter 2.2.1 --- Optical circuit of silicon modulators --- p.38 / Chapter 2.2.2 --- p-n junction --- p.43 / Chapter 2.2.3 --- Electronic circuit --- p.44 / Chapter 2.3 --- Fabrication process --- p.46 / Chapter 2.4 --- Experimental results --- p.47 / Chapter 2.4.1 --- Testing results --- p.48 / Chapter 2.4.2 --- OFDM modulation --- p.58 / Chapter 2.5 --- Summary --- p.61 / References --- p.64 / Chapter Chapter 3 --- Signal quality enhancement using four-wave mixing in silicon waveguides --- p.68 / Chapter 3.1 --- Introduction --- p.68 / Chapter 3.1.1 --- All-optical wavelength conversion and all-optical regeneration --- p.68 / Chapter 3.1.2 --- Generic basics of four-wave mixing --- p.69 / Chapter 3.1.3 --- Four-wave mixing in silicon waveguides --- p.71 / Chapter 3.2 --- Extinction ratio enhancement using FWM in a silicon waveguide --- p.77 / Chapter 3.2.1 --- Extinction ratio enhancement of 10 and 40 Gb/s RZ-OOK signals --- p.77 / Chapter 3.2.1.1 --- Principle --- p.78 / Chapter 3.2.1.2 --- Experimental setup and results --- p.78 / Chapter 3.2.1.3 --- Discussion --- p.82 / Chapter 3.2.2 --- Extinction ratio enhancement of two 40 Gb/s RZ-OOK channels --- p.82 / Chapter 3.2.2.1 --- Principle --- p.83 / Chapter 3.2.2.2 --- Experimental setup and results --- p.84 / Chapter 3.2.2.3 --- Discussion --- p.89 / Chapter 3.3 --- Timing jitter reduction using FWM in silicon waveguides --- p.90 / Chapter 3.3.1 --- Principle --- p.91 / Chapter 3.3.2 --- Experimental setup and results --- p.92 / Chapter 3.3.2.1 --- Timing jitter reduction of RZ-OOK signal --- p.92 / Chapter 3.3.2.2 --- Timing jitter reduction of AMI signal --- p.96 / Chapter 3.3.3 --- Discussion --- p.101 / Chapter 3.4 --- Summary --- p.102 / References --- p.103 / Chapter Chapter 4 --- Optical tunable delay line incorporating a silicon waveguide and a chirped fiber Bragg grating --- p.106 / Chapter 4.1 --- Introduction --- p.106 / Chapter 4.1.1 --- Motivation --- p.106 / Chapter 4.1.2 --- Principle --- p.107 / Chapter 4.1.3 --- Characteristics of the silicon waveguide and chirped FBG --- p.108 / Chapter 4.2 --- Tunable delay line for 10 Gb/s optical signals --- p.111 / Chapter 4.2.1 --- 10 Gb/s optical pulse chain --- p.111 / Chapter 4.2.1.1 --- Experimental setup and results --- p.111 / Chapter 4.2.2 --- 10 Gb/s NRZ-OOK signal --- p.115 / Chapter 4.2.2.1 --- Experimental setup and results --- p.115 / Chapter 4.2.3 --- 10 Gb/s RZ-DPSK signal --- p.119 / Chapter 4.2.3.1 --- Experimental setup and results --- p.119 / Chapter 4.3 --- Summary --- p.124 / References --- p.126 / Chapter Chapter 5 --- Conclusions and future work --- p.129 / Chapter 5.1 --- Conclusions --- p.129 / Chapter 5.2 --- Future work --- p.131 / Chapter Appendix A. --- List of Symbols --- p.133 / Chapter Appendix B. --- Abbreviations --- p.135 / Chapter Appendix C. --- Publications --- p.139

Ge(100) has atomic and electronic structures quite similar to those of Si(100). As a comparison, we have studied the oxidation of Ge(100) surface. Our comparison of the initial oxidation of Ge(100) with that of Si(100) by molecular oxygen shows that the precursor-mediate mechanism and direct adsorption mechanism are common to both systems. (Abstract shortened by UMI.) / It is often been argued that a direct [2+2] addition of unsaturated hydrocarbons to the Si-Si dimer is symmetry forbidden, according to the Woodward-Hoffmann rule. This view is now challenged by our calculations on the reaction path for a concerted [2+2] addition of C2H4 to a Si-Si dimer on Si(100), which identifies a barrier of only ∼0.1eV. Our analysis shows that this is due to the peculiar feature for a surface reaction, when the HOMO and LUMO bands cross the Fermi level of the substrate, as previously suggested by Hoffmann. It illustrates an important conceptual distinction between a gas phase and a surface reaction. / Many previous theoretical studies on the interaction between O2 and Si(100) have neglected the differences between triplet O2 (ground state) and singlet O2 (excited state), and are thus unable to explain the know experimental observations in surface scattering of O2. We demonstrate that in reality, triplet O2 can also react with Si(100). With our computation results on the potential energy curves of the adsorption of triplet O2 on Si(100) and the adsorption structures along these curves, we can explain the known experimental results. The proper adsorption pathway goes through a shallow physisorption potential well, a small transition state and reaches a molecular adsorption state. There are also some interesting interactions between the potential energy curves of the triplet O2 adsorption and singlet O2 adsorption. / This thesis addresses the basic physics and chemistry of some surface reactions by first-principles methods based on density functional theory. The reaction systems probed by this thesis include the cycloaddition of C2H4 on Si(100), and initial oxidation of Si(100), Ge(100) and Al(111) by molecular oxygen. They are all technologically important systems and yet simple enough for us to study them in details theoretically. Although they have been studied both experimentally and theoretically, our first principles calculations reveal new insights that are contrary to prevalent opinions. / Fan Xiaoli = 从头算法研究研究在硅100, 锗100 和铝111 表面上的反应 / 范晓丽. / "June 2005." / Adviser: Lau Woon-ming Leo. / Source: Dissertation Abstracts International, Volume: 67-07, Section: B, page: 3854. / Thesis (Ph.D.)--Chinese University of Hong Kong, 2005. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Text in English; abstracts in English and Chinese. / School code: 1307. / Fan Xiaoli = Cong tou suan fa yan jiu yan jiu zai gui 100, zhe 100 he lü111 biao mian shang de fan ying / Fan Xiaoli.

Styrene (C2H3-C6H5) is expected to have a more complex reaction process due to active reaction sites located in both vinyl group and phenyl group. Our exploration indicates that the adsorption products are coverage dependent. At low coverage, both vinyl group and phenyl group are possible to take part in the adsorption process. A new AsymT adsorption state covered two adjacent Si dimers is identified through two [4+2] cycloaddition. At high coverage, only vinyl group can interact with Si dimer to form cis and trans stereoisomers with different thermal energies and kinetic reaction barriers. STM images and vibrational frequencies are also explored to further support the experimental observations. / The adsorption of unsaturated organic molecules on reconstructed Si(100) surface is widely applied in the modification and functionalization of silicon surface to design new semiconductor materials. The present project is devoted to explore the adsorption mechanisms and the related properties of adsorption species for unsaturated organic molecules: acetylene (C2H 2), ethylene (C2H4), vinyl bromide (C2H 3Br) and styrene (C8H8) by quantum chemical calculation, based on density functional theory (DFT) method with pseudopotentials and plane wave basis set. / The investigation of vinyl bromide (C2H3Br) chemisorption on Si(100) resolves the conflicting conclusions between previous experimental and theoretical studies. The orientation of the vinyl bromide molecule relative to the titled silicon dimer is found to be an important factor for both the stability and reactivity of the precursor state. A new precursor pi-complex is identified, which is metastable and trapped by barriers around 0.1eV. Comparisons between theoretical and experimental vibrational frequencies support the conclusion that such a pi-complex is present on the surface at very low temperature. Careful analysis on the electronic structure also demonstrates that it is indeed a pi-complex rather than a diradical as previously suggested. Reaction mechanisms at higher vinyl bromide coverage are also modeled to explain the decrease in activation barrier observed in experiments. / The reaction processes for acetylene (C2H2) and ethylene (C2H4) chemisorption on the surface silicon dimer and the sub-layer silicon atoms are compared. Acetylene can undergo a new type of cycloaddition on sub-layer Si atoms (called sub-di-sigma) with no barrier, which is identified by ab initio Molecular Dynamics. The related properties including vibrational frequencies and STM images are calculated and found to be similar with those of the end-bridge adsorption structure. The identification of such a sub-di-sigma adsorption structure explains the discrepancy between STM experiments and theoretical calculations. In addition, the analysis of calculated vibrational frequencies, simulated STM images and the reaction barriers for di-sigma and end-bridge structures indicate that inter-dimer reaction for C2H4 is possible. / Zhang, Qiuji. / Adviser: Zhi Feng Liu. / Source: Dissertation Abstracts International, Volume: 70-09, Section: B, page: . / Thesis submitted in: October 2008. / Thesis (Ph.D.)--Chinese University of Hong Kong, 2009. / Includes bibliographical references (leaves 86-87). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Abstracts in English and Chinese. / School code: 1307.

by Chen Dihu. / "November 1999." / Thesis (Ph.D.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (p. 160-173). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Lau Wai Kwok. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references. / Acknowledgement --- p.iv / Abstract --- p.v / Chapter Chapter 1 --- Introduction --- p.1-1 / Chapter 1.1 --- Perspective --- p.1-1 / Chapter 1.2 --- MEDICI - The Simulation Package --- p.1 -2 / Chapter 1.3 --- Overview --- p.1-3 / Chapter Chapter 2 --- The Emergence of SOI Devices --- p.2-1 / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Advantages of SOI Devices --- p.2-1 / Chapter 2.2.1 --- Reliability Improvement --- p.2-2 / Chapter 2.2.2 --- Total Isolation --- p.2-3 / Chapter 2.2.3 --- Improved Junction Structure --- p.2-4 / Chapter 2.2.4 --- Integrated Device Structure --- p.2-5 / Chapter 2.3 --- Categories of SOI Devices --- p.2-6 / Chapter 2.3.1 --- Thick Film SOI Devices --- p.2-7 / Chapter 2.3.2 --- Thin Film SOI Devices --- p.2-8 / Chapter 2.3.3 --- Medium Film SOI Devices --- p.2-8 / Chapter 2.4 --- Drawbacks of SOI Devices --- p.2-9 / Chapter 2.4.1 --- Floating Body Effects --- p.2-9 / Chapter 2.4.2 --- Parasitic Bipolar Effects --- p.2-11 / Chapter 2.4.3 --- Cost --- p.2-15 / Chapter 2.5 --- Manufacturing Methods --- p.2-16 / Chapter 2.5.1 --- Epitaxy-Based Method --- p.2-16 / Chapter 2.5.2 --- Recrystallization-Based Method --- p.2-18 / Chapter 2.5.3 --- Wafer Bonding Based Method --- p.2-19 / Chapter 2.5.4 --- Oxidation Based Method --- p.2-20 / Chapter 2.5.5 --- Implantation Based Method --- p.2-22 / Chapter 2.6 --- Future Trend --- p.2-22 / Chapter 2.7 --- The Quest for Silicon-On-Nitride Structure --- p.2-23 / Chapter Chapter 3 --- Description of Body-Contact SOI Structure --- p.3-1 / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- Current Status of Body-Contact SOI Structure --- p.3-1 / Chapter 3.3 --- The Body-Contact SOI Structure to be studied --- p.3-4 / Chapter 3.4 --- Impact on Device Fabrication --- p.3-7 / Chapter 3.4.1 --- Fabrication of Conventional Bulk CMOS --- p.3-7 / Chapter 3.4.2 --- Fabrication of Conventional SOI CMOS --- p.3-8 / Chapter 3.4.3 --- Fabrication of BC SOI CMOS --- p.3-10 / Chapter Chapter 4 --- Device Simulations --- p.4-1 / Chapter 4.1 --- Introduction --- p.4-1 / Chapter 4.2 --- MEDICI --- p.4-1 / Chapter 4.2.1 --- Basic Equations --- p.4-2 / Chapter 4.2.2 --- Solution Methods --- p.4-3 / Chapter 4.2.3 --- Initial Guess --- p.4-6 / Chapter 4.2.4 --- Grid Allocations --- p.4-7 / Chapter 4.2.5 --- Source File --- p.4-8 / Chapter 4.3 --- Structures for Simulations --- p.4-9 / Chapter 4.3.1 --- l.2μm NMOS Bulk (LDD) --- p.4-9 / Chapter 4.3.2 --- 1.2μm SOI(O) NMOS 1000/3500 NBC --- p.4-11 / Chapter 4.3.3 --- 1.2μm SOI(N) NMOS 1000/3500 NBC --- p.4-12 / Chapter 4.3.4 --- 1.2μm SOI(O) NMOS 1000/3500 WBC --- p.4-13 / Chapter 4.3.5 --- 1.2μm SOI(N) NMOS 1000/3500 WBC --- p.4-14 / Chapter 4.4 --- Summary --- p.4-14 / Chapter Chapter 5 --- Simulation Results --- p.5-1 / Chapter 5.1 --- Introduction --- p.5-1 / Chapter 5.2 --- Comparisons of Different Structures --- p.5-1 / Chapter 5.2.1 --- Impurity Profiles of Structures --- p.5-2 / Chapter 5.2.2 --- Body Effect --- p.5-10 / Chapter 5.2.3 --- Breakdown Voltage and Transistor Current Driving --- p.5-16 / Chapter 5.2.4 --- Transconductance and Mobility --- p.5-20 / Chapter 5.2.5 --- Subthreshold Swing --- p.5-23 / Chapter 5.3 --- Dependence on Key Structure Parameters --- p.5-29 / Chapter 5.3.1 --- Dependence on Insulator Thickness --- p.5-29 / Chapter 5.3.2 --- Dependence on Silicon Overlayer Thickness --- p.5-34 / Chapter 5.3.3 --- Dependence on Size of Body-Contact --- p.5-37 / Chapter 5.4 --- Summary --- p.5-40 / Chapter Chapter 6 --- Reduction of Latch-up Susceptibility --- p.6-1 / Chapter 6.1 --- Introduction --- p.6-1 / Chapter 6.2 --- Construction of a p-channel MOS Transistor --- p.6-2 / Chapter 6.2.1 --- Threshold Voltage and Body Effect --- p.6-3 / Chapter 6.2.2 --- I-V Characteristics --- p.6-3 / Chapter 6.2.3 --- Transconductance --- p.6-5 / Chapter 6.2.4 --- Subthreshold Swing --- p.6-5 / Chapter 6.3 --- Mechanism of Latch-up in CMOS --- p.6-6 / Chapter 6.4 --- Construction of a CMOS Invertor for Simulation --- p.6-10 / Chapter 6.5 --- Latch-up Susceptibility Dependence --- p.6-16 / Chapter 6.5.1 --- Dependence on Insulator Thickness --- p.6-16 / Chapter 6.5.2 --- Dependence on N-well Depth --- p.6-19 / Chapter 6.5.3 --- Dependence on Transistor Separation --- p.6-22 / Chapter 6.5.4 --- Dependence on Size of Body-Contact --- p.6-25 / Chapter 6.6 --- Summary --- p.6-28 / Chapter Chapter 7 --- Conclusions --- p.7-1 / Chapter 7.1 --- Summary --- p.7-1 / Chapter 7.2 --- Recommendation --- p.7-3 / Reference / Appendix A