Title from PDF of title page. / Document formatted into pages; contains 86 pages. / Thesis (M.S.Ch.E.)--University of South Florida, 2003. / Includes bibliographical references. / Text (Electronic thesis) in PDF format. / ABSTRACT: The goal of this thesis is to present the design and development of a chemical vapor deposition reactor for the growth of high quality homoepitaxy silicon carbide films for electronic device applications. The work was performed in the Nanomaterials and Nanomanufacturing Research Center at the University of South Florida from 8/2001-5/2003. Chemical vapor deposition (CVD) is the technique of choice for SiC epitaxial growth. Epitaxial layers are the building blocks for use in various semiconductor device applications. This thesis reports on a SiC epitaxy process where a carrier gas (hydrogen) is saturated with reactive precursors (silane and propane) which are then delivered to a semiconductor substrate resting on a RF induction heated SiC coated graphite susceptor. Growth proceeds via a series of heterogeneous chemical reactions with several steps, including precursor adsorption, surface diffusion and desorbtion of volatile by-products. / ABSTRACT: The design and development of a reactor to make this process controlled and repeatable can be accomplished using theoretical and empirical tools. Fluid flow modeling, reactor sizing, low-pressure pumping and control are engineering concepts that were explored. Work on the design and development of an atmospheric pressure cold-wall CVD (APCVD) reactor will be presented. A detailed discussion of modifications to this reactor to permit hot-wall, low-pressure CVD (LPCVD) operation will then be presented. The consequences of this process variable change will be discussed as well as the necessary design parameters. Computational fluid dynamic (CFD) calculations, which predict the flow patterns of gases in the reaction tube, will be presented. Feasible CVD reactor design that results in laminar fluid flow control is a function of the prior mentioned techniques and will be presented. / System requirements: World Wide Web browser and PDF reader. / Mode of access: World Wide Web.

Title from PDF of title page. / Document formatted into pages; contains 100 pages. / Thesis (M.S.Ch.E.)--University of South Florida, 2003. / Includes bibliographical references. / Text (Electronic thesis) in PDF format. / ABSTRACT: Silicon Carbide has been a semiconductor material of interest as a high power and temperature replacement for Silicon (Si) in harsh environments due to the higher thermal conductivity and chemical stability of SiC. The cost, however, to produce this material is quite high. There are also defects in the substrate material (SiC) that penetrate into the active devices layers which are known device killers. Silicon is a material that provides a low cost substrate material for epitaxial growth and does not contain the defects that SiC substrates have. However, the large ( 22%) lattice mismatch between Si and SiC creates dislocations at the SiC/Si interface and defects in the SiC epitaxial layer. These defects result in high leakage currents in 3C-SiC/Si devices. The main focus of the this research was to reduce or eliminate these defects using novel Si substrates. / ABSTRACT: First a 3C-SiC on Si baseline process was developed under atmospheric pressure conditions consisting of 3 steps - an in-situ hydrogen etch to remove the native oxide, a carbonization step to convert the Si surface to SiC, and finally a growth step to thicken the SiC layer to the desired value. This process was then modified to establish a high-quality, low-pressure 3C-SiC CVD growth process. This LPCVD process was then used to grow 3C-SiC on numerous novel Si substrates, including porous Si, porous 3C-SiC "free-standing" substrates and SOI substrates which consisted on thin Si films bonded to poly-crystalline SiC plates. The results of these experiments are presented along with suggestions for future work so that device-grade films of 3C-SiC can be developed for various applications. / System requirements: World Wide Web browser and PDF reader. / Mode of access: World Wide Web.

Thesis (M.S.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

Thesis (M.S.) -- Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

Glass matrix composites containing a conducting filler such as antimony tin oxide (ATO) or silicon carbide whiskers (SiCw) have the potential for applications such as transparent electrodes, heating elements, and electromagnetic shielding. For these applications, the composite performance is highly dependent on the microstructure of the composite and the interactions the added filler has with one another. In this research, borosilicate glass-matrix composites were fabricated using a processing method that creates segregated percolated networks at low concentrations of conducting fillers. The conducting fillers were hot pressed with the glass microspheres at temperatures near the glass transition temperature (550°C) using various pressures. Upon hot-pressing at these low temperatures, the glass microspheres deformed into faceted polyhedra and the fillers were displaced to the edges of the glass particles, resulting in percolation. The processing method used in this study was able to bypass many of the current composition and densification issues associated with the creation of percolated networks in glass composites. In some cases, the formation of these percolated networks resulted in a 12-13 orders of magnitude decrease in the resistivity. Using a non-destructive electrical measurement technique, ac impedance spectroscopy (IS), the changes in the electrical properties were tracked as the conducting networks developed. Using IS in conjunction with other techniques, correlations were made between the electrical properties, the filler interfaces, and the influence the processing parameters had on the development of the percolation networks within these composites.

The hemocompatibility of crystalline Silicon Carbide (SiC), in its cubic form (i.e., 3C-SiC), has been evaluated and compared to Silicon (Si), the leading material in biosensing applications. Silicon carbide (SiC) is a hard, chemically robust material, very well suited for harsh environment applications, and has been suggested to have very good biocompatibility. Additionally, SiC in its amorphous form, has been used as a coating for medical implantable devices such as bone prosthetics and cardiovascular stents. However, assessment of single crystal 3C-SiC for cardiovascular applications has not been reported. In this research we have studied the interactions of single crystal 3C-SiC with platelets and human microvascular endothelial cell (HMVEC) to assess the degree of hemocompatibility of 3C-SiC. The more hemocompatible a material is, the less platelet adhesion would be expected. Using fluorescence microscopy higher platelet adhesion was statistically observed on Si than on SiC. In addition 3C-SiC surfaces showed less platelet reactivity, measured by the degree of platelet adhesion, aggregation and activation, with mostly circular morphology of adhered platelets while Si showed an elevated presence of non-activated (Circular) platelet clumps. Additionally, HMVEC proliferation assessment suggest that 3C-SiC performs comparably to high attachment culture wells with enhanced proliferation, without affecting cell morphology. These results suggest that 3C-SiC is a promising candidate for applications in the blood stream due to its low thrombogenic characteristics and good hemocompatibility.

A continuous glucose sensor employing radio frequency (RF) signals is presented using the biocompatible material Silicon Carbide (SiC). Unlike biosensors that require direct contact with interstitial fluids to trigger chemical reactions to operate, this biocompatible SiC sensor does not require a direct interface. The sensing mechanism for this SiC sensor is based upon a shift in resonant frequency, as a function of change in glucose levels, which electrically manifests itself as a change in blood permittivity and conductivity. For in vivo applications the antenna sensor needs to operate inside the body environment, and it has been found that the best operational location of this biocompatible SiC sensor is within fatty tissue in close proximity to blood vessels. To test glucose levels, measurements using synthetic body fluid (SBF), which is electrically equivalent to blood plasma, were performed. Changes in sensor performance to varying glucose levels were measured and a shift in resonant frequency to lower values observed with increasing glucose level. In vitro sensor performance demonstrated that the sensor showed a dose dependent response to glucose concentration from 120 mg/dl to 530 mg/dl. A shift of 40 MHz was observed corresponding to a 97 kHz shift per 1 mg/dl change in blood glucose. Similarly the blood glucose levels were measured in pig blood using the same SiC based antenna sensor. The dependence of glucose concentration on resonance frequency observed with pig blood followed the same trend as the bloodviii mimicking experiment discussed earlier. The sensor performance was linear with the frequency shift being a direct function of glucose concentration. An in vivo experiment for foreign body response to subcutaneously-implanted antenna has been conducted using a pig/swine animal model. Tissue histology analysis showed that all-SiC antenna and poly ethylene glycol (PEG) coated Ti/Au antenna did not have any inflammatory immune response for 30 days. However, some inflammatory signs were found on bare Ti/Au antenna. The histological tissue analysis on a-SiC coated and single crystal 3C-SiC samples did not show any significant inflammatory response.

Silicon carbide (SiC) has been around for more than 100 years as an industrial material and has found wide and varied applications because of its unique electrical and thermal properties. In recent years there has been increased attention on SiC as a viable material for biomedical applications. Among these applications are those where SiC is used as a substrate material for biosensors and biotransducers, taking advantage of its surface chemical, tribological and electrical properties. In this work we have used the proven bio- and hema-compatibility of SiC to develop a viable biorecognition interface using SiC as the substrate material for myocardial infarction detection. The approach followed included the development of an electrochemical-based sensor in which 3C-SiC is used as the active electrode and where flat band potential energy changes are monitored after successive modification of the SiC with aminopropyltriethoxysilane, anti-myoglobin and myoglobin incubation. We have studied the quality of self assembled monolayers obtained by surface modification of SiC using organosilanes such as aminopropyltriethoxysilane and octadecene, which is the starting point for the immobilization of cells or proteins on a substrate. We employed this technique on 6H-SiC where we were able to control the proliferation of H4 human neuroglioma and PC12 rat pheochromocytoma cells in vitro. Finally, aminopropyltriethoxysilane (APTES) was successfully used to immobilize anti-myoglobin on the 3C-SiC electrodes as demonstrated by fluorescence microscopy results. The electrical characterization of the surfaces was performed via impedance spectroscopy and by measuring changes in flat band potential using the Mott-Schottky plot technique. Changes in flat band and impedance of the SiC/antibody/protein interface would allow us to detect changes in the space charge region of the semiconductor. However, we believe that because of the presence of surface states and different crystal defects on the 3C-SiC we did not observed repeatable results that allowed us to identify the presence of myoglobin in solution. In addition, certain modifications need to be performed to the electrochemical cell in order to confirm the presence of the myoglobin immobilized on the functionalized SiC surfaces.

Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. These defects provide energy levels within the bandgap and may act as either recombination or trapping centers, depending on whether they interact with both conduction and valence band or only one of the two bands. Of all deep levels know in 4H-SiC, the intrinsic carbon vacancy related Z1/2 is the most problematic since it is a very effective recombination center which is unavoidably formed during growth. Its concentration in the epilayer can be decreased for the production of high voltage devices by injecting interstitial carbon, for example by oxidation, which, however, results in the formation of other new deep levels. Apart from intrinsic crystal flaws, extrinsic defects such as transition metals may also produce deep levels within the bandgap, which in literature have so far only been shown to produce trapping effects. The focus of the thesis is the transient electrical and optical characterization of deep levels in SiC and their influence on the carrier lifetime. For this purpose, deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) variations were used in combination with time-resolved photoluminescence (TRPL). Paper 1 deals with a lifetime limiting deep level related to Fe-incorporation in n-type 4H-SiC during growth and papers 2 and 3 focus on identifying the main intrinsic recombination center in p-type 4H-SiC. In paper 4, the details of the charge carrier capture behavior of the deeper donor levels of the carbon vacancy, EH6/7, are investigated. Paper 5 deals with trapping effects created by unwanted incorporation of high amounts of boron during growth of n-type 4H-SiC which hinders the measurement of the carrier lifetime by room temperature TRPL. Finally, paper 6 is concerned with the characterization of oxidation-induced deep levels created in n- and p-type 4H- and 6H-SiC as a side-product of lifetime improvement by oxidation. In paper 1, the appearance of a new recombination center in n-type 4H-SiC, the RB1 level is discussed and the material is analyzed using room temperature TRPL, DLTS and pnjunction DLTS. The level appears to originate from a reactor contamination with Fe, a transition metal that generally leads to the formation of several trapping centers in the bandgap. Here it is found that under specific circumstances beneficial to the growth of high-quality material with a low Z1/2 concentration, the Fe incorporation also creates an additional recombination center capable of limiting the carrier lifetime. In paper 2, all deep levels found in p-type 4H-SiC grown at Linköping University which are accessible by DLTS and MCTS are investigated with regard to their efficiency as recombination centers. We find that none of the detectable levels is able to reduce carrier lifetime in p-type significantly, which points to the lifetime killer being located in the top half of the bandgap and having a large hole to electron capture cross section ratio (such as Z1/2, which is found in n-type material), making it undetectable by DLTS and MCTS. Paper 3 compares carrier lifetimes measured by temperature-dependent TRPL measurements in n- and p-type 4H-SiC and it is shown that the lifetime development over a large temperature range (77 - 1000 K) is similar in both types. This is interpreted as a further indication that the carbon vacancy related Z1/2 level is the main lifetime killer in p-type. In paper 4, the hole and electron capture cross sections of the near midgap deep levels EH6/7 are characterized. Both levels are capable of rapid electron capture but have only small hole capture rates, making them insignificant as recombination centers, despite their advantageous position near midgap. Minority carrier trapping by boron, which is both a p-type dopant and an unavoidable contaminant in 4H-SiC grown by CVD, is investigated in paper 5. Since even the shallow boron acceptor levels are relatively deep in the bandgap, minority trap and-release effects are detectable in room-temperature TRPL measurements. In case a high density of boron exists in n-type 4H-SiC, for example leached out from damaged graphite reactor parts during growth, we demonstrate that these trapping effects may be misinterpreted in room temperature TRPL measurements as a long free carrier lifetime. Paper 6 uses MCTS, DLTS, and room temperature TRPL to characterize the oxidation induced deep levels ON1 and ON2 in n- and p-type 4H- and their counterparts OS1-OS3 in 6H-SiC. The levels are found to all be positive-U, coupled two-levels defects which trap electrons efficiently but exhibit very inefficient hole capture once the defect is fully occupied by electrons. It is shown that these levels are incapable of significantly influencing carrier lifetime in epilayers which underwent high temperature lifetime enhancement oxidations. Due to their high density after oxidation and their high thermal stability they may, however, act to compensate n-type doping in low-doped material.

The heteroepitaxial growth of cubic silicon carbide (3C-SiC) on (111) silicon (Si) substrates, via a horizontal hot-wall chemical vapor deposition (CVD) reactor, has been achieved. Growth was conducted using a two step process: first the Si substrate surface is converted to SiC via a carbonization process and second the growth of 3C-SiC is performed on the initial carbonized layer. During carbonization, the surface of the Si is converted to 3C-SiC, which helps to minimize the stress in the growing crystal. Propane (C3H8) and silane (SiH4), diluted in hydrogen (H2), were used as the carbon and silicon source, respectively. A deposition rate of approximately 10 µm/h was established during the initial process at a temperature of ~1380 °C. The optimized process produced films with X-ray rocking curve full-width at half-maximum (FWHM) values of 219 arcsec, which is significantly better than any other published results in the literature. Once this process was developed a lower temperature process was developed at a slower growth rate of ~2 µm/h at 1225 °C. The crystal quality was inferior at the reduced temperature but this new process allows for the growth of 3C-SiC(111) films on oxide release layers for MEMS applications. In addition, for electronic device applications, a lower temperature process reduces the generation of defects caused by the nearly 8 % mismatch in the coefficient of thermal expansion (CTE) between 3C-SiC and Si. Finally a new process using a poly-Si seed layer deposited on an oxide-coated Si wafer was used to form 3C-SiC films for MEMS applications. The results indicated initially that the films may even be monocrystalline (based on X-ray evaluation) but later analysis performed using TEM indicated they were highly-ordered polycrystalline films. The grown 3C-SiC films were analyzed using a variety of characterization techniques. The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed (in the case of growth on poly-Si seed layers) by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/oxide interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM), and SEM. The crystalline quality of the films was determined through X-ray diffraction (XRD).