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1	Spin polarization control through resonant states in an Fe/GaAs Schottky barrier Honda, S., Itoh, H., Inoue, J., Kurebayashi, H., Trypiniotis, T., Barnes, C. H. W., Hirohata, A., Bland, J. A. C. 12 1900 (has links) No description available. electron spin polarisation gallium arsenide III-V semiconductors iron Schottky barriers tunnelling
2	Schottky contacts to In2O3 von Wenckstern, Holger, Splith, Daniel Thomas, Schmidt, Florian, Grundmann, Marius, Bierwagen, Oliver, Speck, James S. 27 May 2014 (has links) (PDF) n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned. Ozon Schottky-Barriere Indiumoxid Ozone Schottky barriers indium oxide Metal to metal contacts ddc:530
3	Schottky contacts to In2O3 von Wenckstern, Holger, Splith, Daniel Thomas, Schmidt, Florian, Grundmann, Marius, Bierwagen, Oliver, Speck, James S. January 2014 (has links) n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned. info:eu-repo/classification/ddc/530 ddc:530 Ozon, Schottky-Barriere, Indiumoxid
4	DEFECT AND METAL OXIDE CONTROL OF SCHOTTKY BARRIERS AND CHARGE TRANSPORT AT ZINC OXIDE INTERFACES Foster, Geoffrey M. 18 September 2018 (has links) No description available. Condensed Matter Physics Electrical Engineering Nanoscience Physics Solid State Physics ZnO GZO Cathodoluminescence Schottky Barriers Surface Photovoltage Spectroscopy SPS Surfaces and Interfaces X-ray Photoemission Spectroscopy XPS Nanowires
5	THE ROLE OF NATIVE POINT DEFECTS AND SURFACE CHEMICAL REACTIONS IN THE FORMATION OF SCHOTTKY BARRIERS AND HIGH N-TYPE DOPING IN ZINC OXIDE Doutt, Daniel R. 08 August 2013 (has links) No description available. Condensed Matter Physics Electrical Engineering Materials Science Nanoscience Physics Solid State Physics ZnO GZO Cathodoluminescence Scanning Probe Microscopy SPM Atomic Force Microscopy AFM Kelvin Probe Force Microscopy KPFM Surface Photovoltage Spectroscopy SPS X-ray Photoemission Spectroscopy XPS Schottky Barriers Surfaces and Interfaces

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