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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
11

Transport properties of phosphorus and boron doped LPCVD silicon films and their interpretation.

January 1988 (has links)
by Pei-hsuon Chan. / Parallel title in Chinese characters. / Thesis (M.Ph.)--Chinese University of Hong Kong, 1988. / Bibliography: leaves 227-231.
12

Thickness dependence and doping effect on transport properties of post-hydrogenated amorphous silicon films prepared by vacuum evaporation.

January 1988 (has links)
by Ho Wai Hung. / Thesis (M.Ph.)--Chinese University of Hong Kong, 1988. / Bibliography: leaves 81-83.
13

The infrared spectroscopic study of the effects of solvent exposure on polyimide films

Cockrill, Nathaniel S. January 2009 (has links)
The goal of this research was to observe the changes in thickness and chemical characteristics that occur in Kapton® , a type of polyimide film, when exposed to heated solvents commonly used in cleaning and processing of these materials. Interference fringes present in transmission infrared spectra were used to calculate the thickness changes of the film, and attenuated total reflection infrared spectroscopy (ATR) was used to observe spectral shifts of the polymer film. Pieces of Kapton® film were immersed in heated solvents of n-methyl pyrrolidinone (NMP) and dimethylsulfoxide (DMSO) resulting in a rapid initial increase of film thickness by about 2.5 um during the first 20 minutes. After the initial increase and throughout the remainder of the 2 hour exposure, the film thickness varied little in the NMP solvent at all temperatures, 67, 95, and 125 oC. However, in DMSO, the behavior was more varied and this behavior was only observed in the 95 oC bath. The change in film thickness throughout the course of the experiment was about 1 μm less in the 125 oC as compared to the 95 oC, perhaps due to dissolution of the film by the solvent. When the film is exposed to heated solvents, a significant shift in the vibrational frequency of the asymmetric carbonyl stretch absorption to higher wavenumbers, as compared to the unexposed film, is observed. This indicates that there is some interaction between the Kapton® film and the solvent such that the strength of the carbonyl bond is lessened. Interactions could disrupt the intra- and intermolecular electron sharing and hinder the formation of the charged resonance form. / Introduction and background -- Preliminary experiments and method development -- Swelling studies on Kapton. / Department of Chemistry
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14

Infrared spectroscopic study of polyimide film degradation

Sexton, Charles W. January 2009 (has links)
This thesis focuses on the study of solvent degradation on polyimide films. Polyimides spun on silicon and freestanding polyimide films were exposed to solvents as a function of time at a constant temperature. The polyimide spun on silicon was immersed in dimethyl sulfoxide (DMSO) at 90oC for 30, 90, 270, and 450 min. Infrared spectra were obtained via multiple-bounce attenuated total reflection (ATR) and reflection-absorption (RA) spectroscopy. Thickness calculations were made using interference fringes obtained from RA spectra for each time interval. A reduction of thickness was observed with a total difference of 1.5 μm suggesting film degradation as a function of solvent exposure. Spectral changes in the symmetric and asymmetric carbonyl stretching modes were observed in both the ATR and RA sampling, which could be attributed to further curing of the polymer. Two experiments were performed on the freestanding polyimide film. The first experiment exposed the film to DMSO and the second to n-methyl pyrollidinone (NMP). In both instances, the freestanding film was immersed in the solvent at 98oC for 30, 90, 270, and 450 min. Infrared spectra were obtained via single-bounce ATR and transmission spectroscopy. No noticeable differences in spectra were observed. Thickness calculations were made using interference fringes obtained from transmission spectra. After immersion in DMSO, the thickness of the film increased initially, but then no significant changes in thickness occurred after 30 min. The initial increase in thickness may be due to solvent being trapped inside the film. After immersion in NMP, the thickness calculations showed no change in film thickness. However, our data as well as past researchers suggested some increase in thickness must occur due to solvent absorption. We propose that film degradation may be occurring in the NMP at approximately the same rate as swelling, thus no net decrease in thickness could be observed. This hypothesis is supported by the fact that a yellow coloration was visually observed to be in the solvent after immersion of the freestanding film. A subtraction of a spectrum of fresh NMP solvent from the spectrum of the yellow–colored solvent showed bands consistent with polyamic acid, a starting material for the freestanding film, which could have been formed from a hydrolysis reaction. / Literature review and introduction -- Evaluation of sampling techniques -- Film degradation studies on freestanding films. / Department of Chemistry
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15

Selective radiation properties of particulate semiconductor coatings on metal substrates

Williams, Duane Alwin, January 1961 (has links)
Thesis (Ph. D.)--University of Wisconsin--Madison, 1961. / Typescript. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.
16

The Design of a Dual Method Metal-Organic Chemical Vapor Deposition System

Cox, David B. 01 January 1988 (has links) (PDF)
For the fabrication of semiconductor devices, solar cells, and infrared detectors, thin film deposition methods are required. Of the deposition methods currently available including MBE, LPE, and MOCVD; MOCVD is preferred due to its relatively low cost per wafer, versatility, and high wafer throughput. Requirements which must be considered in the design of a deposition system are discussed. An MOCVD system is designed such that MOCVD can be carried out by plasma enhanced deposition (PED) or low pressure metal-organic chemical vapor deposition (LPMOCVD). As a result of the inherent characteristics of the two methods, a wide range of operational temperatures and pressures are possible. Software is developed for system control including a graphical display of the process schematic. The deposition of GaAS on Si is given as one possible application for this type system.
17

Temperature dependent hall effect: studies ofGaN on sapphire

Huang, Yan, 黃燕 January 2002 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
18

Continuous flow microreactor for chemical bath deposition : a novel approach to the deposition of polycrystalline semiconductor thin films

Mugdur, Prakash 11 March 2005 (has links)
Over the years, chemical bath deposition (CBD) is being widely used in the fabrication of Cu (In, Ga) Se��� and CdTe based solar cells and photovoltaics. Many chalcogenides have been successfully deposited by this technique and it has received a great deal of attention owing to its low temperature and low-cost nature. CdS, an important layer in heterojunction solar cells and other optoelectronic devices, has been successfully deposited by this technique, which is normally carried out as a batch process. But a major disadvantage of batch CBD is the formation of particles and also unwanted deposition generating a lot of waste and thus resulting in defective devices. In this study, we have developed a continuous flow microreactor for CBD to overcome the drawbacks of batch process. This novel microreactor setup makes use of a micromixer for efficient mixing of the reactant streams and helps in controlling the particle size and distribution before the solution impinges on the hot substrate. CdS semiconductor thin films were successfully deposited on oxidized silicon substrates using the microreactor setup and a batch reactor as well. Comparisons of nanostructured thin films were performed by various characterization techniques. The surface morphology of the deposited films, carried out by AFM, SEM and Dektak surface profiler, clearly indicated an improved film quality in case of microreactor. This setup can also be used to deposit various other compound semiconductor thin films with improved film quality and minimum waste production. / Graduation date: 2005
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19

Investigation of low temperature solution-based deposition process for flexible electronics /

Chang, Yu-Jen. January 1900 (has links)
Thesis (Ph. D.)--Oregon State University, 2007. / Printout. Includes bibliographical references. Also available on the World Wide Web.
20

Photoelectric properties of amorphous silicon deposited by the pyrolytic decomposition of silane

Raouf, Nasrat Arif January 1981 (has links)
No description available.

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