Made available in DSpace on 2014-10-09T12:45:41Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:07:18Z (GMT). No. of bitstreams: 1 07609.pdf: 2103835 bytes, checksum: daf8a4e12257ed226478079afb3ed0d5 (MD5) / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

Made available in DSpace on 2014-10-09T12:51:25Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:08:53Z (GMT). No. of bitstreams: 1 11306.pdf: 5168610 bytes, checksum: bc65302ba021a7b116fa1e5360103483 (MD5) / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

Orientador: Flavio Caldas da Cruz / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-06T01:07:38Z (GMT). No. of bitstreams: 1 Figueira_DaviddaSilvaLeocadio_M.pdf: 3869897 bytes, checksum: 4f234a84a87a86465d0b4e90fa141658 (MD5) Previous issue date: 2004 / Resumo: Esta tese apresenta o desenvolvimento de fontes de radiação coerente na região do azul baseadas em lasers semicondutores para excitar a transição de resfriamento e aprisionamento 1 S0-1P1 do Cálcio, em 423nm. Foi construído um laser de diodo em cavidade estendida emitindo em g =846 nm que foi empregado em uma configuração de Cavidade Estendida de Littman, estabilizada em freqüência pela técnica de Side-of-Fringe. Parte da potência deste laser foi amplificada por um amplificador óptico semicondutor. Potências superiores a 700mW em g =846nm foram obtidas. Parte desta potência do amplificador óptico (450mw) foi duplicada em frequência para g =423nm em um cristal de niobato de potássio(KNbO3), utilizado dentro de uma cavidade óptica ressonante com a freqüência do laser. A estabilização da cavidade óptica duplicadora de freqüência foi feita pela técnica de Hansch-Coulliaud . O sistema desenvolvido alcançou potências de 60mW de radiação coerente azul. Esta fonte laser portátil deverá ser utilizada para espectroscopia, resfriamento e aprisionamento de Cálcio / Abstract: This thesis presents the development of sources of coherent radiation in the blue region of the spectrum, based on semiconductors lasers, to excite the cooling and trapping 1S0-1P1 transition of neutral calcium atoms at 423nm. A diode laser emitting at g =846 nm was employed in an extended cavity Littman configuration, and stabilized in frequency by the Side-of-Fringe technique. Part of the laser power was amplified by an optical semiconductor amplifier. Output powers above 700mW at g =846nm were obtained. Part of this amplified power (450mW) was frequency doubled to g =423nm in a potassium niobate (KNbO3) crystal, placed inside a resonant optical cavity. The lock of the doubling optical cavity was made by the Hansch-Coulliaud technique. The developed system reached powers near 60mW of blue coherent radiation at 423nm. This portable laser source will be used for spectroscopy, cooling and trapping of calcium / Mestrado / Física / Mestre em Física

Made available in DSpace on 2014-10-09T12:51:06Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:05:22Z (GMT). No. of bitstreams: 1 11245.pdf: 3839008 bytes, checksum: 2374cc538329b29558236be14950ccdf (MD5) / Dissertacao (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP

Made available in DSpace on 2014-10-09T12:45:41Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:07:18Z (GMT). No. of bitstreams: 1 07609.pdf: 2103835 bytes, checksum: daf8a4e12257ed226478079afb3ed0d5 (MD5) / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

Made available in DSpace on 2014-10-09T12:51:25Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:08:53Z (GMT). No. of bitstreams: 1 11306.pdf: 5168610 bytes, checksum: bc65302ba021a7b116fa1e5360103483 (MD5) / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

Cette thèse s’est concentrée sur l’étude des lasers à blocage de modes destinés à la fenêtre de télécommunication de 1,55 µm et à base de bâtonnets quantiques dont la croissance a été réalisée sur des substrats d’InP. Un des principaux objectifs de ce travail de thèse a consisté à apporter de nouveaux éléments permettant de mieux appréhender les aspects physiques sous-tendant le mécanisme du ML dans ces dispositifs. En effet, une meilleure compréhension du comportement intrinsèque de ces dispositifs et la façon dont ils sont affectés par des facteurs externes, qui pourraient être présents dans les conditions réelles d’utilisation, est cruciale pour leur intégration dans des technologies futures. Un deuxième objectif majeur de ce travail a consisté à démontrer le potentiel d’exploitation de ces dispositifs dans différents scenarii d’applications / This PhD thesis focuses on the study of mode locked laser diodes based on novel optimized InAs Quantum Dash structures grown on InP substrates. It covers several important modelling aspects, the clean room processing of single and two section shallow ridge waveguide lasers, characterization of the fabricated devices and the evaluation of their performance in different application scenarios. Systematic characterization experiments and subsequent analyses have allowed to gain a much deeper comprehension of the physical mechanisms related to the mode locking regime in these devices, thus far not completely understood. This has allowed to better control most of the main physical phenomena limiting device performance, resulting in first demonstrations of record peak power, sub-picosecond pulse, low radio frequency linewidth and high repetition frequency mode locked lasers grown on InP substrates, opening the way to a vast number of potential applications in the 1.55 µm telecommunication window

A novel dispersion-managed breathing-mode semiconductor mode-locked ring laser is developed. The "breathing-mode" designation derives from the fact that intracavity pulses are alternately stretched and compressed as they circulate around the ring resonator. The pulses are stretched before entering the semiconductor gain medium to minimize the detrimental strong integrating self-phase modulation and to enable efficient pulse amplification. Subsequently compressed pulses facilitate bleaching the semiconductor saturable absorber. The intracavity pulse compression ratio is higher than 50. Down chirping when compared to up chirping allows broader mode-locked spectra and shorter pulse generation owing to temporal and spectral semiconductor gain dynamics. Pulses as short as 185 fs, with a peak power of ~230 w, and a focused intensity of ~4.6 gw/cm2 are generated by linear down chirp compensation and characterized by shg-frog method. To our knowledge, this is the highest peak power and the shortest pulse generation from an electrically pumped all-semiconductor system. The very good agreement between the simulated and the measured results verifies our understanding and ability to control the physical mechanisms involved in the pulse shaping within the ring cavity. Application trends such as continuum generation via a photonic crystal fiber, two-photon fluorescence imaging, and ultrafast pulse source for pump-probe experiments are demonstrated.

Harmonically mode-locked semiconductor lasers with external ring cavities offer high repetition rate pulse trains while maintaining low optical linewidth via long cavity storage times. Single frequency injection locking generates widely-spaced and tunable frequency combs from these harmonically mode-locked lasers, while stabilizing the optical frequencies. The output is stabilized long-term with the help of a feedback loop utilizing either a novel technique based on Pound-Drever-Hall stabilization or by polarization spectroscopy. Error signals of both techniques are simulated and compared to experimentally obtained signals. Frequency combs spaced by 2.5 GHz and ~10 GHz are generated, with demonstrated optical sidemode suppression of unwanted modes of 36 dB, as well as RF supermode noise suppression of 14 dB for longer than 1 hour. In addition to the injection locking of actively harmonically mode-locked lasers, the injection locking technique for regeneratively mode-locked lasers, or Coupled OptoElectronic Oscillators (COEOs), is also demonstrated and characterized extensively.

A monolithically integrated broadly tunable MQW laser that utilizes a combined impurity-free vacancy disordering (IFVD) of quantum wells and optical beam steering techniques is proposed and investigated experimentally. The device consists of a beam-steering section and an optical amplifier section fabricated on a GaAs/AlGaAs quantum well (QW) p-i-n heterostructure. The beam steering section forms a reconfigurable optical waveguide that can be moved laterally by applying separately controlled electrical currents to two parallel contact stripes. The active core of the gain section is divided in into selectively intermixed regions. The selective intermixing of the QW in the gain section results in neighboring regions with different optical bandgaps. The wavelength tuning is accomplished by steering the amplified optical beam through the selected region where it experiences a peak in the gain spectrum determined by the degree of intermixing of the QW. The laser wavelength tunes to the peak in the gain spectrum of that region. The IFVD technique relies on a silica (SiO2) capped rapid thermal annealing and it has been found that the degree of intermixing of the QW with the barrier material is dependent on the thickness of the SiO2 film. The QW sample is first encapsulated with a 400nm thick SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD). In the gain section, the SiO2 film is selectively etched using multiple photolithographic and reactive ion etching steps whereas the SiO2 film is left intact in all the remaining areas including the beam-steering section. The selective area quantum well intermixing is then induced by a single rapid thermal annealing step at 975°C for a 20s duration to realize a structure with quantum well that has different bandgaps in the key regions. Optical characterizations of the intermixed regions have shown a blue shift of peak of the electroluminescence emission of 5nm, 16nm and 33nm for the uncapped, 100nm and 200nm iv respectively when compared to the as grown sample. The integrated laser exhibited a wavelength tuning range of 17nm (799nm to 816nm). Based on the same principle of QW selective intermixing, we have also designed and fabricated a monolithically integrated multi-wavelength light emitting diode (LED). The LED emits multiple wavelength optical beams from one compact easy to fabricate QW structure. Each wavelength has an independent optical power control, allowing the LED to emit one or more wavelengths at once. The material for the LED is the same AlGaAs/GaAs QW p-i-n heterostructure described above. The device is divided into selectively intermixed regions on a single QW structure using IFVD technique to create localized intermixed regions. Two different designs have been implemented to realize either an LED with multiple output beams of different wavelengths or an LED with a single output beam that has dual wavelength operation capabilities. Experimental results of the multiple output beams LED have demonstrated electrically controlled optical emission of 800nm, 789nm and 772nm. The single output LED has experimentally been shown to produce wavelength emission of 800nm and/or 772nm depending on electrical activation of the two aligned intermixed regions.