No description available.

Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Melkote, Shreyes; Committee Member: Danyluk, Steven; Committee Member: Griffin, Paul; Committee Member: Johnson, Steven; Committee Member: Kalejs, Juris; Committee Member: Sitaraman, Suresh. Part of the SMARTech Electronic Thesis and Dissertation Collection.

Thesis (Ph. D.)--Lehigh University, 1996. / Includes vita. Includes bibliographical references.

Thesis (Ph. D.)--Florida State University, 2005. / Advisor: Dr. Jim P. Zheng, Florida State University, College of Engineering, Dept. of Electrical and Computer Engineering. Title and description from dissertation home page (viewed Sept. 15, 2005). Document formatted into pages; contains xii, 96 pages. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy

As the miniaturization keeps decreasing in semiconductor device fabrication, metal contamination on silicon surfaces becomes critical. An investigation of the fundamental mechanism of metal contamination process on silicon surface is therefore important. Kinetics and thermodynamics of the copper out-plating process on silicon surfaces in diluted HF solutions are both evaluated by several analytical methods.

Thesis (Ph. D.)--University of Hong Kong, 2006. / Title proper from title frame. Also available in printed format.

No description available.

During fabrication of integrated circuits, fluorocarbon plasma etching is used to pattern dielectric layers. As a byproduct of the process, a fluorocarbon residue is deposited on exposed surfaces and must be removed for subsequent processing. Conventional fluorocarbon cleaning processes typically include at least one plasma or liquid treatment that is oxidative in nature. Oxidative chemistries, however, cause material degradation to next generation low-dielectric constant (low-k) materials that are currently being implemented into fabrication processes. This work addresses the need for alternative fluorocarbon-residue removal chemistries that are compatible with next generation low-k materials. Radical anion chemistries are known for their ability to defluorinate fluorocarbon materials by a reductive mechanism. Naphthalene radical anion solutions, generated using sodium metal, are used to establish cleaning effectiveness with planar model residue films. The penetration rate of the defluorination reaction into model fluorocarbon film residues is measured and modeled. Because sodium is incompatible with integrated circuit processing, naphthalene radical anions are alternatively generated using electrochemical techniques. Using electrochemically-generated radical anions, residue removal from industrially patterned etch structures is used to evaluate the process cleaning efficiency. Optimization of the radical anion concentration and exposure time is important for effective residue removal. The efficiency of removal also depends on the feature spacing and the electrochemical solvent chosen. The synergistic combination of radical anion defluorination and wetting or swelling of the residue by the solvent is necessary for complete removal. In order to understand the interaction between the solvent and the residue, the surface and interfacial energy are determined using an Owens/Wendt analysis. These studies reveal chemical similarities between specific solvents and the model residue films. This approach can also be used to predict residue or film swelling by interaction with chemically similar solvents.