Nesta tese, apresentamos estudos de magnetotransporte em poços quânticos duplos (DQWs) a campos magnéticos de baixo e sob a aplicação de um campo elétrico externo (potencial de porta). Medidas de magnetorresistência foram realizadas tanto no regime linear quanto no regime não linear. Relatamos a observação de oscilações magnéticas de inter-sub-banda (MIS) pela primeira vez. Estas oscilações MIS já foram estudadas em poços quânticos simples (QWs) com duas sub-bandas ocupadas; um DQW´e o sistema mais apropriado para o estudo das oscilações MIS. As oscilações MIS são atribuídas ao espalhamento inter-sub-banda, e a intensidade delas depende da largura da barreira (relacionada ao gap de energia entre as duas sub-bandas ocupadas, SAS). O estudo das oscilações MIS é uma ferramenta importante para poder acessar ao tempo de vida quântico dos elétrons a temperaturas onde as oscilações Shubnikov-de Haas (SdH) já não são observadas. Em nossas amostras, as oscilações MIS persistem até 25 K. Explicamos estes resultados num modelo teórico considerando um potencial de espalhamento de curto alcance com uma contribuição significativa do tempo de espalhamento elástico dos elétrons e uma contribuição do espalhamento elétron-elétron (e-e) com o aumento da temperatura. A aplicação de um campo elétrico externo (correntes dc) modifica fortemente as oscilações MIS. Descrevemos este efeito não linear causado pelo campo elétrico dc com uma função de distribuição oscilatória. Considerando o aquecimento dos elétrons pelo campo elétrico, é extraído o tempo de espalhamento inelástico. Para correntes dc grandes são encontradas discrepâncias entre o experimento e a teoria. Finalmente, consideramos medidas de magnetotransporte como função de potenciais de porta (porta na superficie) levando ao desbalance do DQW. Encontramos que as contribuições clássica e quântica são necessárias para a descrição teórica da magnetorresistência. Descrevemos as contribuições da magnetorresistência em termos das taxas de espalhamento inter e intra sub-banda utilizando uma função gaussiana como função da correlação do potencial. / In this thesis we present studies of magnetotransport in double quantum wells (DQWs) in low magnetic fields and under application of an external electric field (gate potential). Measurements of magnetoresistance have been carried out in both linear and non-linear regime. We report on the observation of magneto-intersubband (MIS) oscillations for the first time. These MIS oscillations have been studied already in quantum wells (QWs) with two occupied subbands, DQW is the most convenient system for studies of MIS oscillations. They are attributed to intersubband scattering and the strength of MIS oscillations depends on the barrier width (´delta´SAS). Analysis of MIS oscillations is an important tool to access quantum lifetime of electrons at high temperatures where Shubnikov-de Haas (SdH) oscillations are already absent. For our samples, MIS oscillations still exist up to 25 K. We explain these results in a theoretical model considering short-range scattering potential with a significant contribution of el´astic scattering time of electrons and a contribution of electron-electron (e-e) scattering if one increases temperature. Application of an external electric field (here a dc currents) strongly modifies the MIS oscillations. We describe this non-linear effect caused by a dc electric field with nonequilibrium part of the electron distribution function. Including the heating of electrons by the electric field, we are able to extract inelastic scattering time. For a strong dc current, a discrepancy between experiment and theory is found. Finally, we consider gate-dependent (top gate) magnetotransport measurements and drive de DQWs out of balance. We find that both cl´assical and quantum contributions are necessary for theoretical description of the magnetoresistance. We express both contributions in terms of inter and intrasubband scattering rates using a gaussian function as correlation function of the potential.

Nesta tese, apresentamos estudos de magnetotransporte em poços quânticos duplos (DQWs) a campos magnéticos de baixo e sob a aplicação de um campo elétrico externo (potencial de porta). Medidas de magnetorresistência foram realizadas tanto no regime linear quanto no regime não linear. Relatamos a observação de oscilações magnéticas de inter-sub-banda (MIS) pela primeira vez. Estas oscilações MIS já foram estudadas em poços quânticos simples (QWs) com duas sub-bandas ocupadas; um DQW´e o sistema mais apropriado para o estudo das oscilações MIS. As oscilações MIS são atribuídas ao espalhamento inter-sub-banda, e a intensidade delas depende da largura da barreira (relacionada ao gap de energia entre as duas sub-bandas ocupadas, SAS). O estudo das oscilações MIS é uma ferramenta importante para poder acessar ao tempo de vida quântico dos elétrons a temperaturas onde as oscilações Shubnikov-de Haas (SdH) já não são observadas. Em nossas amostras, as oscilações MIS persistem até 25 K. Explicamos estes resultados num modelo teórico considerando um potencial de espalhamento de curto alcance com uma contribuição significativa do tempo de espalhamento elástico dos elétrons e uma contribuição do espalhamento elétron-elétron (e-e) com o aumento da temperatura. A aplicação de um campo elétrico externo (correntes dc) modifica fortemente as oscilações MIS. Descrevemos este efeito não linear causado pelo campo elétrico dc com uma função de distribuição oscilatória. Considerando o aquecimento dos elétrons pelo campo elétrico, é extraído o tempo de espalhamento inelástico. Para correntes dc grandes são encontradas discrepâncias entre o experimento e a teoria. Finalmente, consideramos medidas de magnetotransporte como função de potenciais de porta (porta na superficie) levando ao desbalance do DQW. Encontramos que as contribuições clássica e quântica são necessárias para a descrição teórica da magnetorresistência. Descrevemos as contribuições da magnetorresistência em termos das taxas de espalhamento inter e intra sub-banda utilizando uma função gaussiana como função da correlação do potencial. / In this thesis we present studies of magnetotransport in double quantum wells (DQWs) in low magnetic fields and under application of an external electric field (gate potential). Measurements of magnetoresistance have been carried out in both linear and non-linear regime. We report on the observation of magneto-intersubband (MIS) oscillations for the first time. These MIS oscillations have been studied already in quantum wells (QWs) with two occupied subbands, DQW is the most convenient system for studies of MIS oscillations. They are attributed to intersubband scattering and the strength of MIS oscillations depends on the barrier width (´delta´SAS). Analysis of MIS oscillations is an important tool to access quantum lifetime of electrons at high temperatures where Shubnikov-de Haas (SdH) oscillations are already absent. For our samples, MIS oscillations still exist up to 25 K. We explain these results in a theoretical model considering short-range scattering potential with a significant contribution of el´astic scattering time of electrons and a contribution of electron-electron (e-e) scattering if one increases temperature. Application of an external electric field (here a dc currents) strongly modifies the MIS oscillations. We describe this non-linear effect caused by a dc electric field with nonequilibrium part of the electron distribution function. Including the heating of electrons by the electric field, we are able to extract inelastic scattering time. For a strong dc current, a discrepancy between experiment and theory is found. Finally, we consider gate-dependent (top gate) magnetotransport measurements and drive de DQWs out of balance. We find that both cl´assical and quantum contributions are necessary for theoretical description of the magnetoresistance. We express both contributions in terms of inter and intrasubband scattering rates using a gaussian function as correlation function of the potential.

This thesis consists of two parts. The first part considers the effect of microwave radiation on magnetotransport in high quality GaAs/AlGaAs heterostructure two dimensional electron systems. The effect of microwave (MW) radiation on electron temperature was studied by investigating the amplitude of the Shubnikov de Haas (SdH) oscillations in a regime where the cyclotron frequency $\omega_{c}$ and the MW angular frequency $\omega$ satisfy $2\omega \leq \omega_{c} \leq 3.5\omega$. The results indicate negligible electron heating under modest MW photoexcitation, in agreement with theoretical predictions. Next, the effect of the polarization direction of the linearly polarized MWs on the MW induced magnetoresistance oscillation amplitude was investigated. The results demonstrate the first indications of polarization dependence of MW induced magnetoresistance oscillations. In the second part, experiments on the magnetotransport of three dimensional highly oriented pyrolytic graphite (HOPG) reveal a non-zero Berry phase for HOPG. Furthermore, a novel phase relation between oscillatory magneto- and Hall- resistances was discovered from the studies of the HOPG specimen.

Previous studies have demonstrated the sensitivity of the amplitude of the microwave radiation-induced magnetoresistance oscillations to the microwave polarization. These studies have also shown that there exists a phase shift in the linear polarization angle dependence. But the physical origin of this phase shift is still unclear. Therefore, the first part of this dissertation analyzes the phase shift by averaging over other small contributions, when those contributions are smaller than experimental uncertainties. The analysis indicates nontrivial frequency dependence of the phase shift. The second part of the dissertation continues the study of the phase shift and the results suggest that the specimen exhibits only one preferred radiation orientation for different Hall-bar sections. The third part of the dissertation summarizes our study of the Hall and longitudinal resistance oscillations induced by microwave frequency and dc bias at low filling factors. Here, the phase of these resistance oscillations depends on the contact pair on the device, and the period of oscillations appears to be inversely proportional to radiation frequency.

Nous présentons dans ce travail la caractérisation, essentiellement en transport, de couches de graphène épitaxiés élaborées par sublimation contrôlée de carbure de silicium (SiC). Des mesures de transport électroniques sont effectuées à basse température (T~1,6 K) et à fort champ magnétique. Dans une première partie, Il est indispensable de se focaliser sur la méthode spécifique (‘graphite cap') utilisée pour la fabrication de tous les échantillons étudiés dans ce travail au CNM, Barcelone. La méthode de ‘graphite cap' permet d'obtenir des couches de graphène en formes de rubans suffisamment isolés entre eux pour la fabrication de dispositifs électroniques. La croissance de graphène donne des résultats très différents suivant les conditions de croissance et les spécificités du substrat de carbure de silicium employé : les échantillons obtenus sur face carbone, et les échantillons sur face silicium.Sur face carbone, deux polytypes de SiC ont été utilisés pour l'élaboration de graphène : (i) sur le polytype ‘6H-SiC (on axis)', des rubans de graphène de l'ordre de 600 µm de longueur et de 6 µm de largeur sont obtenus. La largeur de graphène reste faible car le graphène suit la formation des marches sur le SiC résultant de la reconstruction de la surface pendant la croissance (‘step bunching'). Des monocouches ont été identifiées par spectroscopie Raman. Les résultats de transport sur ces monocouches montrent que la concentration de porteurs, de type trous, varie entre 5x1012cm-2 et 5x1013cm-2. L'effet Hall quantique n'est pas observé à cause du dopage élevé. Mais des oscillations de Shubnikov de Haas ont été bien résolues et étudiées pour extraire leurs phases. La phase des oscillations est égale à zéro, ce qui est une signature de la présence d'une monocouche de graphène.(ii) sur le polytype ‘4H-SiC (8° off axis)', les rubans obtenus sont plus larges et peuvent atteindre une longueur de 600 µm et une largeur de 50 µm. L'utilisation d'un substrat SiC avec une désorientation intentionnelle lors du clivage de la surface initiale permet la coalescence des rubans de graphène. Les résultats de transport sur les monocouches montrent que les porteurs sont toujours de type trous, mais beaucoup moins dopé sur plusieurs monocouches (de l'ordre 8x1011cm-2). L'effet Hall quantique est reporté sur un échantillon dont la mobilité atteint 11 000 cm²/V.s. Une étude à bas champ magnétique est encore réalisée et donnent des informations intéressantes sur l'(anti)localisation faible. Tous les phénomènes quantiques observés sont des signatures sur les propriétés intrinsèques des monocouches de graphène. Pour mieux appréhender le graphène épitaxié, il est important de faire varier la concentration de porteurs. Pour cela, une autre approche est proposée. Nous avons fabriqué une face arrière d'un échantillon semi-isolant par implantation d'ions d'azotes dans le SiC avant la croissance de graphène. Les résultats de transport obtenus sur les monocouches de graphène ont montré l'efficacité de cette grille pour contrôler le type de porteurs. L'effet Hall quantique a été observé pour les deux types de porteurs avec des plateaux de Hall remarquables en largeur (23 T).Sur la face Si, des multicouches de graphène couvrent uniformément toute la surface du substrat. Les multicouches de graphène sont plus épaisses sur les bords de marches que sur les terrasses, identifiées par spectroscopie Raman. Les porteurs sont maintenant de type électrons grâce à la couche de tampon qui existe sur la face Si. Les résultats de transport en champ magnétique et à basse température détectent l'existence d'une anisotropie électrique dues principalement aux marches du substrat SiC. / In this work, we present the characterization, mainly in transport, of epitaxial graphene layers produced by controlled sublimation of silicon carbide substrate (SiC). Electronic transport measurements are performed at low temperature (T ~ 1.6 K) and high magnetic field. In the first part, we explain the specific method ('graphite cap') used for growth of the samples studied in this work at CNM, Barcelona. The method of 'graphite cap' provides graphene ribbons homogeneous and isolated for the fabrication of electronic devices.Graphene on SiC gives very different results depending on the conditions of growth (temperature, pressure…) and the face of SiC substrate used: carbon face (C-face) or silicon face (Si-face).On the carbon face, two SiC polytypes have been used for the graphene growth:(i) On axis 6H-SiC: graphene ribbons are obtained on the whole surface. The length of ribbon approaches 600 µm and the width do not exceed 6 µm. The graphene follows the formation of steps on the SiC resulting from surface reconstruction during growth (‘step bunching'), which affects the graphene width. Monolayers were identified by Raman spectroscopy. For all measured samples, we found that the graphene is p-typed doped with a Hall concentration between 5x1012 and 5x1013cm-2. The quantum Hall effect is not observed because of the high doping level. But the Shubnikov de Haas oscillations (SdH) have been well resolved and studied. The phase of the oscillations is equal to zero, which is a signature from the presence of graphene monolayer.(ii) 8° off axis 4H-SiC: graphene ribbons obtained are larger and can reach a length of 600 µm and a width of 50 µm. The use of a SiC substrate with intentional disorientation upon cleavage of the initial surface allows the coalescence of the graphene ribbons. For all measured devices on this sample, we found that the graphene is p-typed doped (as determined from the sign of the Hall effect) with a Hall concentration between 8x1011 and 1013 cm-2. Mobilities varied between 1000 and 11000 cm²/Vs from device to device at 4K. Magnetoresistance revealed both Shubnikov-de Haas (SdH) oscillations, and interference phenomena (weak localization and antilocalization). For some low doped devices, Quantum Hall effect was observed. All quantum phenomena observed are signatures on the intrinsic properties of graphene monolayers.The main drawback of the epitaxial growth technique is the difficulty to control of the carrier density. Here, we investigate a bottom gate of a graphene device, epitaxially grown on the C-face of SiC substrate. The gate was realized by Nitrogen atoms implantation in the SiC crystal. The transport measurements have shown the effectiveness of the gate to control the type of carriers. The quantum Hall effect was observed for both types of carriers with remarkable Hall plateaus width (23 T).On the silicon face, we discuss results obtained from few layer graphene (FLG) grown epitaxially on the (0001) surface of a 6H-SiC substrate. Carriers are now like electrons through the buffer layer that exists on the Si face. The resulting FLG uniformly covers the substrate on which large step bunched terraces are also visible. The FLG is thicker at the step edges, as evidenced by micro-Raman analysis. Indeed, a noticeable anisotropy of the resistance has been detected by magnetotransport measurements at low temperature and high magnetic field. We will argue that this anisotropy originates from different mobilities, in the terraces and at the step edges.

This master’s thesis deals with the modelling of electronic properties of graphite crystal, which are measurable using a spectrometer based on high frequency electron paramagnetic resonance (HFEPR for short) located in laboratories of CEITEC BUT. This is especially the band structure of graphite and its Landau levels. The theoretical part of the thesis describes key effects and connections from quantum mechanics and definitions of important terms from solid state physics, which are used to describe the crystalline structure of graphite and its electronic properties. Furthermore, the project describes the HFEPR spectrometer and its functional principle. In the practical part of the thesis, there are numerical models of the band structure of graphite and of its Landau levels and description of the preparation of a graphite sample for measurement. At the end of the practical part there is the analysis of measurements results, namely the cyclotron resonance and Shubnikov-de Haas oscillations, thanks to which it is possible to determine physical parameters of the sample, such as effective mass of charge carriers and fundamental frequency.

Cette thèse est dédiée à l'étude des propriétés de magnéto-transport des gaz d'électrons bidimensionnel, et plus spécifiquement du graphène sur carbure de silicium (G/SiC) ainsi qu’à l'interface entre les oxydes complexes LaAlO3 (LAO) et SrTiO3 (STO). Nous exploitons la génération d’un champ magnétique intense (jusqu'à 80 T) et les très basses températures (jusqu'à 40 mK) pour étudier les propriétés de transport quantique, qui sont évocatrices de la structure de bandes électroniques sous-jacente. Dans G/SiC, à la limite du régime d’effet Hall quantique, nous mesurons un plateau de Hall ultra-large quantifié à R=h/2e² couvrant un champ magnétique de plus de 70 T (de 7 T à 80 T). La résistance longitudinale est proche de zéro mais présente, de manière inattendue, de faibles oscillations périodiques avec l’inverse du champ magnétique. Sur la base d’observations microscopiques, ce gaz d’électrons 2D est modélisé par une matrice de graphène ayant une densité de porteurs de charge faible, parsemée d’ilots de taille micrométrique ayant un dopage plus important. Les simulations numériques des propriétés de transport reproduisent bien le plateau de Hall et la présence des oscillations. Au-delà du substrat de SiC qui agit comme un réservoir de charge et stabilise le facteur de remplissage à ν=2, un transfert de charge dépendant du champ magnétique entre les ilots chargés est responsable de la présence des oscillations de la magnétorésistance. Cette étude originale fournit de nouvelles perspectives pour des applications en métrologie. Les propriétés remarquables des gaz d’électrons 2D à l'interface entre les oxydes complexes LAO et STO sont aujourd'hui envisagées pour le développement de futurs dispositifs multifonctionnels. Toutefois, leurs propriétés électroniques sont encore mal connues et nécessitent des recherches plus approfondies. Dans ces systèmes, la magnétorésistance montre des oscillations de Shubnikov-de Haas (SdH) quasi-périodiques et un effet Hall linéaire jusqu'à 55 T à basse température. Nous observons une différence d’un ordre de grandeur entre la densité de porteurs extraite de la période des oscillations SdH et la pente de la résistance de Hall, impliquant la présence de nombreuses sous-bandes à l'énergie de Fermi. Les oscillations quasi-périodiques de la magnétorésistance sont bien reproduites par des simulations numériques prenant en compte l'effet Rashba à l'interface. De plus, à partir de l'évolution des oscillations SdH avec la tension de grille à très basse température (40mK), nous identifions les sous-bandes électroniques contribuant au transport, les orbitales atomiques dont elles dérivent, ainsi que leur localisation spatiale dans la profondeur de l'interface. / This thesis is devoted to the study of the magneto-transport properties of two dimensional electron gas (2DEG), and more specifically graphene on silicon carbide (G/SiC) as well as the interface between two complex oxides LaAlO3 / SrTiO3 (LAO/STO). We take advantage of very high magnetic field (up to 80 T) and very low temperature (down to 40 mK) to investigate the quantum transport properties, which are evocative of the underlying electronic band-structure. In G/SiC, close to the quantum Hall breakdown regime, we measure an ultra-broad quantum Hall plateau at R=h/2e² covering a magnetic field range of more than 70 T (from 7 T to 80 T). Accordingly, the longitudinal resistance is close to zero, but displays unexpected weak 1/B-periodic oscillations. Based on microscopic observations, this 2DEG is modeled as a low charge carrier density graphene matrix decorated by micrometers-size puddles with larger doping. Numerical simulations of the transport properties reproduce well both the broad Quantum Hall plateau and the presence of the oscillations. Besides the SiC substrate which acts as a charge reservoir and stabilizes the quantum Hall state at filling factor ν=2, a magnetic field dependent transfer of charges involving the puddles is responsible for the presence of the oscillating features. This original study provides new insights for resistance metrology purposes. The 2DEG arising at the interface between the complex oxides LAO and STO is nowadays envisioned for future multi-functional devices. Their electronic properties are still a matter of debate and require further investigations. The high field magneto-resistance of this 2DEG displays quasi-periodic Shubnikov-de Haas Oscillations (SdHO) and a linear Hall effect up to 55 T at low temperature. We observe a large discrepancy between the carrier density extracted from the period of the SdHO and the slope of the Hall resistance, which constitutes a strong evidence for the presence of many sub-bands crossing the Fermi energy. The quasi-periodic oscillations of the magneto-resistance are well reproduced by numerical simulations taking into account the strong Rashba effect at the interface. In addition, from the back-gate voltage evolution of the SdHO at sub-kelvin temperature, we identify the electronic sub-bands contributing to transport, the orbital symmetry from which they derive, as well as their spatial localization along the interface.