We have investigated the conductance, g, of 1,4-butanedithiol linked Au nanoparticle films as a function of temperature, T, bias potential, V, and applied magnetic field, B. An interesting temperature dependence is observed for non-metallic films with thicknesses just below a critical film thickness: g ~ exp [-(T_0/T)^(1/2)] for 20 K < T < 300 K. We show that this temperature dependence is incompatible with an Efros-Shklovskii "variable range hopping" model, since "hopping distances" are too large to be consistent with tunneling processes, and tend to scale with size of super-clusters of molecularly-linked nanoparticles. We propose a "quasilocalized hopping" model based on competition between single-electron charging of super-clusters and electron backscattering within super-clusters to explain the observed temperature dependence. Various electron scattering time scales are extracted from magnetoconductance data using a modified "weak localization" model. Elastic scattering time scales are comparable to those required for an electron to traverse a nanoparticle, while inelastic and spin-orbit scattering time scales are consistent with those found in studies of conventionally-prepared granular Au films. At interfaces between metallic 1,4-butanedithiol-linked Au nanoparticle films and conventional superconductors, we find that g consistently exhibits peaks, as well as oscillations, that depend simultaneously on both V and B. Such peaks and correlated conductance oscillations are predicted by an enhanced Andreev reflection process due to disorder-driven elastic scattering and electron-hole interference in the nanoparticle film. While oscillations have been predicted by a so-called "reflectionless tunneling" model, they have not been observed at other normal-superconductor interfaces. We speculate that oscillations are observable in this system due to synthetically controlled uniformity of elastic scattering length (i.e., nanoparticle diameter) and a reduced number of current-carrying pathways, especially near the interface. Contrary to predictions of existing "reflectionless tunneling" models, we find that the periods of oscillation in B decrease as T increases. This suggests that the area of interfering pathways increases with T. We propose that this increasing area can be attributed to magnetic field penetration into the superconductor. Conductance data agrees remarkably well with known temperature dependence of penetration depth predicted by BCS theory. Our study shows that this additional region of flux must be considered in experimental and theoretical studies of "reflectionless tunneling", and underscores the utility of molecularly-linked nano\-particle films as a platform for studying charge transport.

We have investigated the conductance, g, of 1,4-butanedithiol linked Au nanoparticle films as a function of temperature, T, bias potential, V, and applied magnetic field, B. An interesting temperature dependence is observed for non-metallic films with thicknesses just below a critical film thickness: g ~ exp [-(T_0/T)^(1/2)] for 20 K < T < 300 K. We show that this temperature dependence is incompatible with an Efros-Shklovskii "variable range hopping" model, since "hopping distances" are too large to be consistent with tunneling processes, and tend to scale with size of super-clusters of molecularly-linked nanoparticles. We propose a "quasilocalized hopping" model based on competition between single-electron charging of super-clusters and electron backscattering within super-clusters to explain the observed temperature dependence. Various electron scattering time scales are extracted from magnetoconductance data using a modified "weak localization" model. Elastic scattering time scales are comparable to those required for an electron to traverse a nanoparticle, while inelastic and spin-orbit scattering time scales are consistent with those found in studies of conventionally-prepared granular Au films. At interfaces between metallic 1,4-butanedithiol-linked Au nanoparticle films and conventional superconductors, we find that g consistently exhibits peaks, as well as oscillations, that depend simultaneously on both V and B. Such peaks and correlated conductance oscillations are predicted by an enhanced Andreev reflection process due to disorder-driven elastic scattering and electron-hole interference in the nanoparticle film. While oscillations have been predicted by a so-called "reflectionless tunneling" model, they have not been observed at other normal-superconductor interfaces. We speculate that oscillations are observable in this system due to synthetically controlled uniformity of elastic scattering length (i.e., nanoparticle diameter) and a reduced number of current-carrying pathways, especially near the interface. Contrary to predictions of existing "reflectionless tunneling" models, we find that the periods of oscillation in B decrease as T increases. This suggests that the area of interfering pathways increases with T. We propose that this increasing area can be attributed to magnetic field penetration into the superconductor. Conductance data agrees remarkably well with known temperature dependence of penetration depth predicted by BCS theory. Our study shows that this additional region of flux must be considered in experimental and theoretical studies of "reflectionless tunneling", and underscores the utility of molecularly-linked nano\-particle films as a platform for studying charge transport.

The study of quantum interference in solid-state systems yields insight in fundamental properties of mesoscopic systems. Electron quantum interference constitutes an important method to explore mesoscopic physics and quantum decoherence. This dissertation focuses on two-dimensional (2D) electron systems in $delta-$Si doped n-type In$_{0.64}$Ga$_{0.36}$As/In$_{0.45}$Al$_{0.55}$As, 2D hole systems in Si-doped p-type GaAs/Al$_{0.35}$Ga$_{0.65}$As and C-doped p-type GaAs/\Al$_{0.24}$Ga$_{0.76}$As heterostructures. The low temperature experiments study the magnetotransport of nano- and micro-scale lithographically defined devices fabricated on the heterostructures. These devices include a single ring interferometer and a ring interferometer array in 2D electron system, Hall bar geometries and narrow wires in 2D hole systems. The single ring interferometer yields pronounced Aharonov-Bohm (AB) oscillations with magnetic flux periodicity of h/e over a wide range of magnetic field. The periodicity was confirmed by Fourier transformation of the oscillations. The AB oscillation amplitude shows a quasi-periodic modulation over applied magnetic field due to local magnetic flux threading through the interferometer arms. Further study of current and temperature dependence of the amplitude of the oscillations indicates that the Thouless energy forms the measure of excitation energies giving quantum decoherence. An in-plane magnetic field was applied to the single ring interferometer to study the Berry's phase and the Aharonov-Casher effect. The ring interferometer array yields both AB oscillations and Altshuler-Aronov-Spivak (AAS) oscillations, the latter with magnetic flux periodicity of h/2e. The AAS oscillations require time-reversal symmetry and hence can be used to qualify time-reversal symmetry breaking. More importantly, the fundamental mesoscopic dephasing length associated with time-reversal symmetry breaking under applied magnetic field, an effective magnetic length, can be obtained by the analysis of the AAS oscillations over magnetic field. A theoretical model for confined ballistic system is confirmed by experimental data fitting. The AAS oscillations are barely resolved above 0.16 T and their amplitude decays with increasing magnetic field. The AB oscillations exist till above 2 T and their amplitude doesn't show the monotonic decay with increasing magnetic field. The different behavior of the AAS and AB oscillations originates in the different symmetries, respectively temporal and spatial, that they are sensitive to. The p-type 2D GaAs system has strong spin-orbit interaction (SOI). Antilocalization in a Hall bar geometry was analyzed by the 2D Hikami-Larkin-Nagaoka (HLN) theory to obtain the spin coherence time and phase coherence time. The 2D hole systems we studied have low density and high mobility, quite different from the 2D electron systems. These high-quality 2D hole systems demonstrate semi-classical ballistic phenomena in mesoscopic structures preferentially to quantum-coherence phenomena. / Ph. D.

Mesoscopic effects in ferromagnets could be different from mesoscopic effects in normal metals. While normal metals with a short mean-free-path do not exhibit classical magnetoresistance, weakly disordered ferromagnets with a similar mean-free-path display magnetoresistance including domain wall resistance (DWR) and anisotropic magnetoresistance (AMR). Magnetoresistance could lead to novel mesoscopic effects because the wave function phase depends on the scattering potential. In this thesis, we present our measurements of mesoscopic resistance fluctuations in cobalt nanoparticles and study how the fluctuations with bias voltage, bias fingerprints, respond to magnetization-reversal processes. The resistance has been found to be very sensitive to the magnetic state of the sample. In particular, we observe significant wave-function phase shifts generated by domain walls, and it is explained by mistracking effect, where electron spins lag in orientation with respect to the moments inside the domain wall. Short dephasing length and dephasing time are found in our Co nanoparticles, which we attribute to the strong magnetocrystalline anisotropy.

Nous présentons dans ce travail la caractérisation, essentiellement en transport, de couches de graphène épitaxiés élaborées par sublimation contrôlée de carbure de silicium (SiC). Des mesures de transport électroniques sont effectuées à basse température (T~1,6 K) et à fort champ magnétique. Dans une première partie, Il est indispensable de se focaliser sur la méthode spécifique (‘graphite cap') utilisée pour la fabrication de tous les échantillons étudiés dans ce travail au CNM, Barcelone. La méthode de ‘graphite cap' permet d'obtenir des couches de graphène en formes de rubans suffisamment isolés entre eux pour la fabrication de dispositifs électroniques. La croissance de graphène donne des résultats très différents suivant les conditions de croissance et les spécificités du substrat de carbure de silicium employé : les échantillons obtenus sur face carbone, et les échantillons sur face silicium.Sur face carbone, deux polytypes de SiC ont été utilisés pour l'élaboration de graphène : (i) sur le polytype ‘6H-SiC (on axis)', des rubans de graphène de l'ordre de 600 µm de longueur et de 6 µm de largeur sont obtenus. La largeur de graphène reste faible car le graphène suit la formation des marches sur le SiC résultant de la reconstruction de la surface pendant la croissance (‘step bunching'). Des monocouches ont été identifiées par spectroscopie Raman. Les résultats de transport sur ces monocouches montrent que la concentration de porteurs, de type trous, varie entre 5x1012cm-2 et 5x1013cm-2. L'effet Hall quantique n'est pas observé à cause du dopage élevé. Mais des oscillations de Shubnikov de Haas ont été bien résolues et étudiées pour extraire leurs phases. La phase des oscillations est égale à zéro, ce qui est une signature de la présence d'une monocouche de graphène.(ii) sur le polytype ‘4H-SiC (8° off axis)', les rubans obtenus sont plus larges et peuvent atteindre une longueur de 600 µm et une largeur de 50 µm. L'utilisation d'un substrat SiC avec une désorientation intentionnelle lors du clivage de la surface initiale permet la coalescence des rubans de graphène. Les résultats de transport sur les monocouches montrent que les porteurs sont toujours de type trous, mais beaucoup moins dopé sur plusieurs monocouches (de l'ordre 8x1011cm-2). L'effet Hall quantique est reporté sur un échantillon dont la mobilité atteint 11 000 cm²/V.s. Une étude à bas champ magnétique est encore réalisée et donnent des informations intéressantes sur l'(anti)localisation faible. Tous les phénomènes quantiques observés sont des signatures sur les propriétés intrinsèques des monocouches de graphène. Pour mieux appréhender le graphène épitaxié, il est important de faire varier la concentration de porteurs. Pour cela, une autre approche est proposée. Nous avons fabriqué une face arrière d'un échantillon semi-isolant par implantation d'ions d'azotes dans le SiC avant la croissance de graphène. Les résultats de transport obtenus sur les monocouches de graphène ont montré l'efficacité de cette grille pour contrôler le type de porteurs. L'effet Hall quantique a été observé pour les deux types de porteurs avec des plateaux de Hall remarquables en largeur (23 T).Sur la face Si, des multicouches de graphène couvrent uniformément toute la surface du substrat. Les multicouches de graphène sont plus épaisses sur les bords de marches que sur les terrasses, identifiées par spectroscopie Raman. Les porteurs sont maintenant de type électrons grâce à la couche de tampon qui existe sur la face Si. Les résultats de transport en champ magnétique et à basse température détectent l'existence d'une anisotropie électrique dues principalement aux marches du substrat SiC. / In this work, we present the characterization, mainly in transport, of epitaxial graphene layers produced by controlled sublimation of silicon carbide substrate (SiC). Electronic transport measurements are performed at low temperature (T ~ 1.6 K) and high magnetic field. In the first part, we explain the specific method ('graphite cap') used for growth of the samples studied in this work at CNM, Barcelona. The method of 'graphite cap' provides graphene ribbons homogeneous and isolated for the fabrication of electronic devices.Graphene on SiC gives very different results depending on the conditions of growth (temperature, pressure…) and the face of SiC substrate used: carbon face (C-face) or silicon face (Si-face).On the carbon face, two SiC polytypes have been used for the graphene growth:(i) On axis 6H-SiC: graphene ribbons are obtained on the whole surface. The length of ribbon approaches 600 µm and the width do not exceed 6 µm. The graphene follows the formation of steps on the SiC resulting from surface reconstruction during growth (‘step bunching'), which affects the graphene width. Monolayers were identified by Raman spectroscopy. For all measured samples, we found that the graphene is p-typed doped with a Hall concentration between 5x1012 and 5x1013cm-2. The quantum Hall effect is not observed because of the high doping level. But the Shubnikov de Haas oscillations (SdH) have been well resolved and studied. The phase of the oscillations is equal to zero, which is a signature from the presence of graphene monolayer.(ii) 8° off axis 4H-SiC: graphene ribbons obtained are larger and can reach a length of 600 µm and a width of 50 µm. The use of a SiC substrate with intentional disorientation upon cleavage of the initial surface allows the coalescence of the graphene ribbons. For all measured devices on this sample, we found that the graphene is p-typed doped (as determined from the sign of the Hall effect) with a Hall concentration between 8x1011 and 1013 cm-2. Mobilities varied between 1000 and 11000 cm²/Vs from device to device at 4K. Magnetoresistance revealed both Shubnikov-de Haas (SdH) oscillations, and interference phenomena (weak localization and antilocalization). For some low doped devices, Quantum Hall effect was observed. All quantum phenomena observed are signatures on the intrinsic properties of graphene monolayers.The main drawback of the epitaxial growth technique is the difficulty to control of the carrier density. Here, we investigate a bottom gate of a graphene device, epitaxially grown on the C-face of SiC substrate. The gate was realized by Nitrogen atoms implantation in the SiC crystal. The transport measurements have shown the effectiveness of the gate to control the type of carriers. The quantum Hall effect was observed for both types of carriers with remarkable Hall plateaus width (23 T).On the silicon face, we discuss results obtained from few layer graphene (FLG) grown epitaxially on the (0001) surface of a 6H-SiC substrate. Carriers are now like electrons through the buffer layer that exists on the Si face. The resulting FLG uniformly covers the substrate on which large step bunched terraces are also visible. The FLG is thicker at the step edges, as evidenced by micro-Raman analysis. Indeed, a noticeable anisotropy of the resistance has been detected by magnetotransport measurements at low temperature and high magnetic field. We will argue that this anisotropy originates from different mobilities, in the terraces and at the step edges.

Apresentamos neste trabalho algumas propriedades do transporte de cargas de heteroestruturas contendo pontos-quânticos. Três tópicos foram explorados: no primeiro, observamos um comportamento anômalo nos platôs do efeito Hall quântico, que atribuímos à existência de estados de borda contra-rotativos; no segundo, determinamos o tempo de decoerência do sistema bidimensional de elétrons em função do estágio evolutivo de pontos-quânticos de InAs autoformados nas suas proximidades. Concluímos que a tensão mecânica acumulada durante o crescimento epitaxial \"congela\" os elétrons, reduzindo a taxa de decoerência; finalmente, testamos algumas das possíveis configurações de heteroestruturas visando a construção de fotodetectores baseados em pontos-quânticos. Observamos que a repetição da região-ativa pode ser utilizada como um parâmetro no controle das mobilidades quânticas e, por conseguinte, das propriedades de operação desses detectores. / In this work we present transport properties of heterostructures with quantum-dots. Three subjects were exploited: on the first one, we observed anomalous quantum Hall plateaus, for wich we attributed to the existence of counter-rotating edge-states; on the second subject, we determined the decoherence time of the bidimensional electron system as a function of the evolutionary stage of nearby self-assembled quantum-dots. We concluded the mechanical stress accumulated during the epitaxial growth \"freezes\" the electrons, reducing the decoherence rate; finally, we tested some base-heterostructures of infrared photodetectors. We observed the stacking of active-regions can be used as a parameter to control quantum-mobilities and, as a consequence, the operation properties of such detectors.

Cette thèse a pour objet l’étude des effets de cohérence de la propagation d’ondes en milieu désordonné, à l’aide d’atomes ultrafroids. Ces systèmes permettent un contrôle précis de paramètres clés, tels que la dimensionnalité, les interactions, la vitesse initiale des atomes et le potentiel externe. Utilisant cette flexibilité, il a été possible de réaliser des expériences en régime fortement et faiblement localisé. La première expérience traite de l’expansion d’un condensat, dont une fraction maximale de 20% est localisée, permettant ainsi l’observation de la localisation d’Anderson en 3D. Lors de la seconde expérience, les atomes ont été envoyés dans un désordre quasi 2D avec une vitesse initiale bien définie. Il a été possible d’observer la distribution en impulsions des atomes, et ainsi de mesurer le temps de libre parcours moyen et le temps de transport. La rétrodiffusion cohérente s’est clairement manifestée sous la forme d’un pic dans la direction opposée à la direction initiale. L’amplitude et la largeur de ce pic ont été étudiées, et les résultats sont en accord avec la théorie. Microscopiquement, la rétrodiffusion cohérente a pour origine l’interférence constructive entre chemins à diffusions multiples symétriques par renversement du temps (symétrie T). Cette symétrie de la propagation d’ondes a été ensuite manipulée. Un déphasage précis a été introduit grace à un pulse de gradient de champ magnétique, qui détruit la symétrie T ainsi que la rétrodiffusion cohérente, sauf pour un bref instant : une résurgence du pic est alors observée. Ce nouvel effet démontre explicitement le rôle de la cohérence et de la symétrie T dans la localisation faible. / In this manuscript the coherence effects of wave propagation in disordered potentials is studied. Our experiment uses ultracold atoms as a probe, a system allowing for a very good control over parameters such as the dimensionality, interactions, initial velocity of the atoms, and the potential landscape. Exploiting this flexibility we were able to perform experiments in the strongly and the weakly localized regime. In the former the 3D expansion of a BEC was monitored in real space, resulting in the observation of 3D Anderson localization with a maximum localized fraction of about 20%. In the latter the atoms were launched into a quasi-2D disorder with a well defined initial velocity. Monitoring the momentum space distribution the mean scattering time and the transport time can be directly measured, and coherent backscattering (CBS) is clearly visible as a peak in the backwards direction. In a first set of experiments the evolution of the CBS amplitude and width were recorded and found to be in good agreement with theory. Microscopically, CBS stems from the constructive interference of time-reversed multiply scattered paths. In a second set of CBS experiments we manipulated the time-reversal symmetry (TRS) of the wave propagation. A surgical dephasing was introduced via a shortly pulsed gradient field, which brakes TRS and suppresses CBS except for a brief moment, when a revival of CBS is observed. This novel effect showcases explicitly the role of coherence and TRS in Coherent Backscattering and weak localization.

Apresentamos neste trabalho algumas propriedades do transporte de cargas de heteroestruturas contendo pontos-quânticos. Três tópicos foram explorados: no primeiro, observamos um comportamento anômalo nos platôs do efeito Hall quântico, que atribuímos à existência de estados de borda contra-rotativos; no segundo, determinamos o tempo de decoerência do sistema bidimensional de elétrons em função do estágio evolutivo de pontos-quânticos de InAs autoformados nas suas proximidades. Concluímos que a tensão mecânica acumulada durante o crescimento epitaxial \"congela\" os elétrons, reduzindo a taxa de decoerência; finalmente, testamos algumas das possíveis configurações de heteroestruturas visando a construção de fotodetectores baseados em pontos-quânticos. Observamos que a repetição da região-ativa pode ser utilizada como um parâmetro no controle das mobilidades quânticas e, por conseguinte, das propriedades de operação desses detectores. / In this work we present transport properties of heterostructures with quantum-dots. Three subjects were exploited: on the first one, we observed anomalous quantum Hall plateaus, for wich we attributed to the existence of counter-rotating edge-states; on the second subject, we determined the decoherence time of the bidimensional electron system as a function of the evolutionary stage of nearby self-assembled quantum-dots. We concluded the mechanical stress accumulated during the epitaxial growth \"freezes\" the electrons, reducing the decoherence rate; finally, we tested some base-heterostructures of infrared photodetectors. We observed the stacking of active-regions can be used as a parameter to control quantum-mobilities and, as a consequence, the operation properties of such detectors.

The results reported in this thesis contribute to the understanding of disordered systems, to mesoscopic physics on the one hand, and to the physics of spin glasses on the other hand. The first part of this thesis studies numerically coherent electronic transport in a non magnetic metal accurately doped with frozen magnetic impurities (a low temperature spin glass). Thanks to a recursive code that calculates the two terminal conductance of the system, we study in detail the metallic regime of conduction (large conductance) as well as the insulating regime (small conductance). In both regimes, we highlight a universal behavior of the system. Moreover, a study of correlations between the conductance of different spin configurations of impurities allows us to link these correlations with correlations between spin configurations. This study opens the route for the first experimental determination of the overlap via transport measurements. A second part of this thesis deals with the study of the mean field Sherrington-Kirkpatrick model, which describes the low temperature phase of an Ising spin glass. We are interested here in the generalization of this model to quantum spins (i.e including the possibility to flip by quantum tunneling) of this classical model that was well studied during the past thirty years. We deduce analytically motion equations at the semi-classical level, for which the influence of quantum tunneling is weak, and we compare them with the classical case. We finally solve numerically these equations using a pseudo-spectral method.