WORKING POOR IN THE CZECH REPUBLIC Abstract Even though poverty is not the death or life question in developed countries it is necessary to pay attention to it. The topic of poverty, social cohesion and social exclusion plays now an increasing role in the EU agenda; working poor started to be explored in 1990s there. Working poor are people poor despite working. Work should serve as a protection of poverty, it should guarantee better living standard to employed people in comparison to those dependent on social protection. Therefore, it is necessary to pay attention to the issue of working poor, to identify them, to find out the reasons why they are poor and to develop measures to help them not to be poor. This thesis brings a comprehensive view on the working poor in the Czech Republic. The focus is on the poverty rate as well as characteristics of working poor. Methods for measuring this phenomenon have not been fully developed yet, there is still not a consensus on the most suitable methods. Different methods are introduced, compared and critically evaluated in the first - theoretically oriented - part of the thesis. Combination and modification of existing methods creates a base for methodology used in this thesis. The core part of the thesis is dedicated to the detailed analysis of working poor in the...

DETERMINANTS OF POVERTY IN THE CZECH REPUBLIC Abstract In this thesis we present the determinants and the current state of poverty in the Czech Republic in 2014. We clearly set out the definition of poverty and delimit various concepts of poverty, that is the old and the new concept of poverty, the subjective versus the objective one, the absolute versus the relative concept, as well as the direct and the indirect plus the prescriptive and the consensual poverty. We also introduce various ways to measure poverty. A substantial part of the theoretical section focuses on the introduced methods and definitions of particular indicators (the at risk of poverty rate, the relative median at risk of poverty gap, the Gini coefficient, the income quintile share ratio, the material deprivation rate). We have used the method of logistic regression and the processed data which were gained from the project Životní podmínky 2014 (The Living Conditions 2014) and EU-SILC 2014. At the same time, still in the theoretical part of the thesis, we also dealt with the causes of poverty and the attitudes towards the poor as sociology, psychology and ethics view them. The analysis has proved that, based on equivalised household income, persons living in households in villages with 2 000-4 999 inhabitants are susceptible to poverty...

Poverty of Czech seniors Abstract Poverty is a relevant topic even in developed countries, which it needs to be deal with. In the following diploma thesis I will introduce some definitions and concepts of poverty and material deprivation. I will also deal with process of demographic ageing and a development of senior's population in the Czech Republic. The intention of the analytical part of this diploma thesis is to capture a level of poverty and material deprivation of Czech seniors in year 2014, using at-risk- of-poverty rate and material deprivation rate. I will focus on the following question: "Which group of seniors based on gender, marital status, age and education is threatened the most by poverty or material deprivation". I will describe the level of poverty and material deprivation in different regions of the Czech Republic. I also will compare differences between seniors and the whole population in the sense of the level of poverty and material deprivation. This thesis uses data from the Czech Statistical Office, particularly the data from the Population Cenzus in years 2001 and 2011 and also the data from the household survey called Living condition in year 2014. Selected data are used in binary logistic regression for describing the determinants of poverty and material deprivation of seniors in...

Wage inequality is a well-established phenomenon of contemporary labour markets both in the United States and Europe, frequently discussed in the contemporary labour economics literature. In the following paper, based on harmonised data of the EU-SILC database, a semi parametric technique of quantile regression has been applied together with the traditional OLS method in order to estimate the impact of returns to education on wages in the Visegrad Group countries, namely the Czech Republic, Poland, Hungary and Slovakia. The main aim of the analysis is to examine the returns to education in these countries in order to observe differences appearing across them as well as within selected groups formed according to both the highest level of education attained and a number of years spent in a paid work (experience).

The aim of the thesis is analysis of financial situation of households in Czech Republic. The main goal of the thesis is primarily analysis of differences in financial situation of households bellow and above the poverty threshold. The thesis is also focused on living standarts of households bellow the poverty threshold. This task is performed by using models of logistic regression for deeper analysis of situation of the Czech households.

De nombreuses applications industrielles spécifiques dans les secteurs tels que l'automobile, le médical et le spatial, requièrent un très haut niveau de fiabilité. Ce type d'applications fonctionnant sous des contraintes sévères (haute température, corrosion, vibration, radiations,…) impose aux industriels des spécifications particulières en termes de fiabilité et de consommation d'énergie. Dans ce contexte, les travaux menés ont pour objectif d'étudier la fiabilité des mémoires Flash embarquées pour des applications faible consommation et à forte contrainte de fiabilité. Après une introduction orientée sur les deux volets d'étude que sont la caractérisation électrique et le test de mémoires non volatiles, un modèle physique capable de modéliser le courant de SILC a été développé. Cet outil permet de répondre à la problématique de perturbations en lecture (read disturb) et donne aux designers et technologues un moyen d'estimer le taux de défaillance de cellules mémoires en fonction de paramètres physiques, géométriques et électriques ainsi que des moyens d'action afin de minimiser ce phénomène indésirable. La fiabilité (oxyde tunnel, endurance) et les performances (consommation énergétique) de la cellule Flash sont ensuite étudiées en explorant les variations de paramètres du procédé de fabrication et des conditions électriques de fonctionnement. Enfin, une étude originale menée en temps réel sur plus de 15 mois est consacrée à la fiabilité en rétention des mémoires Flash soumises aux effets des particules radiatives présentes dans l'environnement naturel terrestre. / Many specific applications used in automotive, medical and spatial activity domains, require a very high level of reliability. These kinds of applications, working under severe constraints (high temperature, corrosion, vibration, radiations…) challenge memory manufacturers and impose them particular specifications in terms of reliability and energy consumption. In this context, work presented in this thesis aim at studying embedded Flash memories reliability for low power and high reliability applications. After an introduction oriented on areas of electrical characterizations and Test of non-volatile memories, a physical model of SILC leakage current is developed. This tool is used to answer to disturbs problematic and gives to designers and technologists a way to estimate the failure rate of memory cells according to physical, geometrical and electrical parameters, giving leads to minimize this unwanted phenomenon. Reliability (tunnel oxide, cell endurance) and performances (energy consumption) of Flash memory cell are then studied exploring process parameters variations and electrical conditions optimizations. Finally, an original real-time experiment over more than 15 months is focused on Flash memories retention reliability due to irradiative particles effects of natural terrestrial environment.

Ce manuscrit expose des travaux effectués entre 1994 et 2004 sur la fiabilité des composants à base de structures MOS et la fiabilité des oxydes ultra-minces de SiO2 (<10nm) utilisés comme isolant de grille dans ces composants. Nous avons établi un lien entre courants de fuite dans l'oxyde (SILC) et injection de porteurs chauds, principalement les trous chauds, dans les oxydes de 3.8 et 4.7nm. La dépendance en champ et en température du SILC soutient un modèle d'effet tunnel assisté par des défauts neutres barycentriques dans l'oxyde, même si une composante partielle de type Schottky est identifiable. Pour les claquages de type Soft-breakdown relevés, nous avons proposé un modèle simple, fondé sur un rétrécissement local de l'épaisseur d'oxyde. Le phénomène LVSILC, typique de la structure MOS en déplétion, est mis en évidence suite à des stress à tension constante pour des oxydes entre 2.5 et 1.2 nm. Nous proposons de l'interpréter comme un effet tunnel assisté par des niveaux proches des bandes de conduction ou de valence de la densité d'états d'interface. Les mécanismes de génération sont principalement déterminés par l'énergie des porteurs injectés (y compris dans le cas d'injections de porteurs chauds), et génèrent une loi d'accélération en VG pour le vieillissement en mode tunnel direct. On établit une loi générale, donnant la probabilité de création de défauts en fonction des paramètres qui déterminent l'énergie des porteurs injectés. <br />Nos études sur les porteurs chauds nous ont aussi amené à étudier la fiabilité de transistor MOSFET lors de contraintes dynamiques (AC), caractéristiques des séquences de polarisation en mode normal de fonctionnement. Le résultat pratique de ce travail est la mise en oeuvre d'une méthodologie s'inspirant de l'hypothèse quasi-statique pour la prévision des durées de vie AC. Cette méthodologie, éprouvée et comparée aux résultats de mesure dans un certains nombre de cas où sa validité est reconnue, est appliquée au cas plus complexe du transistor de passage NMOS. L'accord reste satisfaisant, mais nous avons également mis en évidence les limitations de cette technique lors de séquences faisant intervenir des relaxations, des périodes de dépiégegage ou des dégradations bi-directionnelles.<br />Concernant le lien entre les étapes du procédé et la fiabilité, nous avons étudié l'influence d'une étape d'implantation ionique à haute énergie, qui induit un dégât dans le volume du semi-conducteur détecté électriquement par C(V), mais aussi des courants de fuite similaires au SILC (IILC Implantation Induced Leakage Current). Nous avons mis au point une méthodologie optimisée de détection du Wafer Charging, utilisant des injections très courtes de porteurs chauds (au pic de courant électronique) dans le transistor PMOS. Cette méthode s'est révélée plus sensible et plus révélatrice que les injections pratiquées en régime Fowler-Nordheim ou la simple étude paramétrique pour détecter les défauts latents issus du charging dans les oxydes minces. Enfin, nous avons identifié par DLTS les défauts issus d'une contamination au Fer dans le Silicium (paire Fe-B et Fer interstitiel Fei) et avons observé la re-transformation spontanée du Fei en paire Fe-B en quelques heures.

In the last three decades, the electronic industry has registered a tremendous progress. The continuous and aggressive downsizing of the transistor feature sizes (CMOS scaling) has been the main driver of the astonishing growth and advancement of microelectronic industry. Currently, the CMOS scaling is almost reaching its limits. The gate oxide is now only a few atomic layers thick, and this extremely thin oxide causes a huge leakage current through the oxide. Therefore, a further reduction of the gate oxide thickness is extremely difficult and new materials with higher dielectric constant are being explored. However, the phenomena of oxide breakdown and reliability are still serious issues in these thin oxides. Oxide breakdown exhibits a soft breakdown behavior at low voltages, and this is posing as one of the most crucial reliability issues for scaling of the ultra-thin oxides. In addition, the stress-induced leakage current (SILC) due to oxide has emerged as a scaling problem for the non-volatile memory technologies. In this dissertation, a percolation modeling approach is introduced to study and understand the dramatic changes in the conductivity of a disordered medium. Two different simulation methods of percolative conduction, the site and bond percolation, are studied here. These are used in simulating the post-breakdown conduction inside the oxide. Adopting a Monte-Carlo method, oxide breakdown is modeled using a 2-D percolation theory. The breakdown statistics and post-breakdown characteristics of the oxide are computed using this model. In this work, the effects of different physical parameters, such as dimension and the applied stress are studied. The simulation results show that a thinning of oxide layer and increasing the oxide area result in softening of breakdown. It is observed that the breakdown statistics appear to follow Weibull characteristics. As revealed by simulations, the Weibull slope changes linearly with oxide thickness, while not having a significant change when the area is varied and when the amount of the applied stress is varied. It is shown that the simulation results are well correlated with the experimental data reported in the literature. In this thesis, studying the conduction through the oxide using percolation model, it was discovered that a critical or a quasi-critical phenomenon occurs depending on the oxide dimensions. The criticality of the phase-transition results in a hard breakdown while the soft breakdown occurs due to a quasi-critical nature of percolation for ultra-thin oxides. In the later part of the thesis, a quantum percolation model is studied in order to explain and model the stress induced leakage current. It is explained that due to the wave nature of electrons, the SILC can be modeled as a tunneling path through the stressed oxide with the smaller tunneling threshold compared to the virgin oxide. In addition to the percolation model, a Markov chain theory is introduced to simulate the movement of electron as a random walk inside the oxide, and the breakdown is simulated using this random-walk of electron through the accumulated traps inside the oxide. It is shown that the trapping-detrapping of electrons results in an electrical noise in the post-breakdown current having 1/f noise characteristics. Using simulation of a resistor network with Markov theory, the conductance of the oxide is computed. An analytical study of a 2-D site percolation system is conducted using recursive methods and useful closed-form expressions are derived for specialized networks.

In the last three decades, the electronic industry has registered a tremendous progress. The continuous and aggressive downsizing of the transistor feature sizes (CMOS scaling) has been the main driver of the astonishing growth and advancement of microelectronic industry. Currently, the CMOS scaling is almost reaching its limits. The gate oxide is now only a few atomic layers thick, and this extremely thin oxide causes a huge leakage current through the oxide. Therefore, a further reduction of the gate oxide thickness is extremely difficult and new materials with higher dielectric constant are being explored. However, the phenomena of oxide breakdown and reliability are still serious issues in these thin oxides. Oxide breakdown exhibits a soft breakdown behavior at low voltages, and this is posing as one of the most crucial reliability issues for scaling of the ultra-thin oxides. In addition, the stress-induced leakage current (SILC) due to oxide has emerged as a scaling problem for the non-volatile memory technologies. In this dissertation, a percolation modeling approach is introduced to study and understand the dramatic changes in the conductivity of a disordered medium. Two different simulation methods of percolative conduction, the site and bond percolation, are studied here. These are used in simulating the post-breakdown conduction inside the oxide. Adopting a Monte-Carlo method, oxide breakdown is modeled using a 2-D percolation theory. The breakdown statistics and post-breakdown characteristics of the oxide are computed using this model. In this work, the effects of different physical parameters, such as dimension and the applied stress are studied. The simulation results show that a thinning of oxide layer and increasing the oxide area result in softening of breakdown. It is observed that the breakdown statistics appear to follow Weibull characteristics. As revealed by simulations, the Weibull slope changes linearly with oxide thickness, while not having a significant change when the area is varied and when the amount of the applied stress is varied. It is shown that the simulation results are well correlated with the experimental data reported in the literature. In this thesis, studying the conduction through the oxide using percolation model, it was discovered that a critical or a quasi-critical phenomenon occurs depending on the oxide dimensions. The criticality of the phase-transition results in a hard breakdown while the soft breakdown occurs due to a quasi-critical nature of percolation for ultra-thin oxides. In the later part of the thesis, a quantum percolation model is studied in order to explain and model the stress induced leakage current. It is explained that due to the wave nature of electrons, the SILC can be modeled as a tunneling path through the stressed oxide with the smaller tunneling threshold compared to the virgin oxide. In addition to the percolation model, a Markov chain theory is introduced to simulate the movement of electron as a random walk inside the oxide, and the breakdown is simulated using this random-walk of electron through the accumulated traps inside the oxide. It is shown that the trapping-detrapping of electrons results in an electrical noise in the post-breakdown current having 1/f noise characteristics. Using simulation of a resistor network with Markov theory, the conductance of the oxide is computed. An analytical study of a 2-D site percolation system is conducted using recursive methods and useful closed-form expressions are derived for specialized networks.

The dissertation deals with the issue of poverty in the Czech Republic, especially with its economic, political and historical context of development, theory and practice of its measurement and possible international comparability, both in scale and in terms of the effectiveness of social transfers system. The effectiveness is understood as reducing the extent of poverty represented by the at-risk-of-poverty rate used e.g. in Europe 2020 Strategy. The aim of the dissertation is to analyze the problem of income poverty and its development in the Czech Republic with a special focus on the effectiveness of the social transfers system in relation to reducing the extent of income poverty. The effectiveness is analyzed separately in case of social transfers as a whole, and in case of social transfers excluding old-age and survivors' pensions. The emphasis has been placed on international comparisons and on the poorest layers of the population represented by the study of the lower poverty lines than the standard one. Based on empirical analysis of survey data from the EU-SILC, it was disproved that the effectiveness of the Czech social transfers system was above average compared to the countries of the same welfare state model, the CEE region and the EU during the years 2005-2013. The Czech pension system plays a crucial role in the level of effectiveness of the social transfers system. The good position of the Czech Republic among the all three studied groups of countries in terms of effectiveness is maintained mainly thanks to its pension system.The current low level of poverty rate was achieved mainly thanks to the pre-crisis measures, respectively due to the specific timing of these measures package. The contribution of this dissertation consists in complex and systematized view of the income poverty in the Czech Republic, accompanied by the analysis of the effectiveness of the social transfer system. This analysis, owing to the time series (2005-2013), applied methods (methods of the European Commission vs. IZA method) and scope of the international comparison (welfare state model, CEE region and EU), has no similarity in the Czech scientific literature so far.