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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
31

Waves or particles? : a study of semiconductor interfaces using energy filtered transmission electron microscopy and electron holography

Barnard, Jonathan Simon January 1999 (has links)
No description available.
32

Hot carriers and high field effects in SiGe heterostructures

Ansaripour, Ghassem January 1999 (has links)
No description available.
33

Thermoelectric properties of Si-based two dimensional structures

Agan, Sedat January 2000 (has links)
No description available.
34

Issues concerning the use of H and Sb surfactant in Si and Si←1←-←xGe←X MBE

Lambert, Andrew David January 2000 (has links)
No description available.
35

Growth techniques and characterisation of Si←1←-←xGe←x heterostructures for pMOS applications

Grasby, Timothy John January 2000 (has links)
No description available.
36

Characterisation of the hole-acoustic phonon interaction in modulation doped Si/Si←1←-←xGe←x (0.085<=x<=0.28) heterostructures

Braithwaite, Glyn January 1999 (has links)
No description available.
37

Dynamics and Kinetics of Si/Si←(←1-←x←)Ge←(←x←) MBE studies by reflectance spectroscopy

Lees, Anna January 1998 (has links)
No description available.
38

Poly-Si₁₋xGex Film Growth for Ni Germanosilicided Metal Gate / Poly-Si1-xGex Film Growth for Ni Germanosilicided Metal Gate

Yu, Hongpeng, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A. 01 1900 (has links)
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁₋xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented. / Singapore-MIT Alliance (SMA)
39

Synthesizing Germanium And Silicon Nanocrystals Embedded In Silicon Dioxide By Magnetron Sputtering Technique

Alagoz, Arif Sinan 01 August 2007 (has links) (PDF)
Applications of semiconductor nanocrystal in electronics are promising. Various techniques were developed to synthesize and analyze semiconductor nanocrystals for integrated circuit applications. In this study, silicon and germanium nanocrystals were synthesized in silicon dioxide matrix by magnetron sputtering deposition and following high temperature furnace annealing. Multilayer and single layer samples were prepared by co-sputtering depositions. Transmission electron microscopy measurements were carried out to analyze annealing effects on nanocrystal size distribution, change in shape, density and localization in silicon dioxide (SiO2). Ge-Ge Traverse Optical (TO) peak was monitored using Raman spectroscopy to investigate germanium nanocrystal formation and stress effects of silicon dioxide. Si-O-Si asymmetric stretching band is examined by Fourier transform infrared transmission spectroscopy to study silicon dioxide matrix recovery with germanium nanocrystal formation. Luminescence characteristics of silicon nanocrystals in visible and near infrared region (550nm-1050nm) with changing nanocrystal size and density were studied with photoluminescence spectroscopy.
40

Analysis and Optimization of Inductively Degenerated Common-Emitter Low-Noise Amplifier Utilizing Miller Effect

Lin, Chi-min 03 September 2009 (has links)
This thesis proposes a modified inductively degenerated common-emitter low-noise amplifier. To add a series-shunt feedback capacitance in series to the base of the cascode transistor for increasing the load impedance of the common-emitter transistor and enhancing the Miller effect, it is applied to improve the circuit¡¦s performance. By thoroughly studying the Miller effect for the input matching, noise, and linearity analysis and derivation of the modified structure, the theoretical analysis and experiments demonstrate the improved linearity and well noise performance. In addition, the proposed method is presented with the good figure of merit. The proposed method is presented in a hybrid circuit with the NEC 2S5010 NPN transistor for 900 MHz applications. It demonstrates that this method improves the linearity and the figure of merit has been increased by 50 to 70 percent. Moreover, the novel low noise amplifier is designed with a 0.35£gm SiGe BiCMOS process supported by the TSMC for 5.7 GHz WLAN band applications. It is found that the circuit has the characteristic of IM3 nonlinearity cancellation because the cascode transistor eliminates the third-order intermodulation genaerated by the common-emitter transistor. This thesis establishes a realizable method for high-linearity low-noise amplifier.

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