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The low temperature oxidation behavior of Si(₁-[subscript x]) Ge[subscript x] thin films in a fluorinated ambient /Kilpatrick, Stephen James, January 1997 (has links)
Thesis (Ph. D.)--Lehigh University, 1997. / Includes vita. Bibliography: leaves 266-279.
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Casting and analysis of squeeze cast aluminium silicon eutectic alloy : a thesis presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Mechanical Engineering at the University of Canterbury, Christchurch, New Zealand /Smillie, Matthew. January 2006 (has links)
Thesis (Ph. D.)--University of Canterbury, 2006. / Typescript (photocopy). Includes bibliographical references (p. [161]-166). Also available via the World Wide Web.
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Low Voltage BiCMOS Circuit Topologies for the Design of a 19GHz, 1.2V, 4-Bit Accumulator in Silicon-GermaniumBethel, Ryan H. January 2007 (has links) (PDF)
No description available.
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Fracture behaviour of rapid solidification processed Fe-Al-Si alloys /Guruswamy, Sivaraman January 1984 (has links)
No description available.
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Electrical conductivity studies of cast Al-Si and Al-Si-Mg alloysMülazımoğlu, Mehmet Hașim January 1988 (has links)
No description available.
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L'effet du taux de refroidissement, modification au strontium, traitement thermique du liquide et la mise en solution sur les caractéristiques des particules du silicium eutectique et les propriétés de traction de l'alliage A356 /Chen, Hu, January 2005 (has links)
Thèse (M.Eng.) -- Université du Québec à Chicoutimi, 2005. / Bibliogr.: f[160]-167. Document électronique également accessible en format PDF. CaQCU
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Silicon-germanium BiCMOS device and circuit design for extreme environment applicationsDiestelhorst, Ryan M. 08 April 2009 (has links)
Silicon-germanium (SiGe) BiCMOS technology platforms have proven invaluable for implementing a wide variety of digital, RF, and mixed-signal applications in extreme environments such as space, where maintaining high levels of performance in the presence of low temperatures and background radiation is paramount. This work will focus on the investigation of the total-dose radiation tolerance of a third generation complementary SiGe:C BiCMOS technology platform. Tolerance will be quantified under proton and X-ray radiation sources for both the npn and pnp HBT, as well as for an operational amplifier built with these devices. Furthermore, a technique known as junction isolation radiation hardening will be proposed and tested with the goal of improving the SEE sensitivity of the npn in this platform by reducing the charge collected by the subcollector in the event of a direct ion strike. To the author's knowledge, this work presents the first design and measurement results for this form of RHBD.
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L'effet des niveaux de refroidissement (température de du moule) et des traitements thermiques sur les propriétés mécaniques et sur la microstructure des deux alliages composites Al-Si-Mg/SiC/10p /Labib, Atef. January 1993 (has links)
Mémoire (M.Eng.)-- Université du Québec à Chicoutimi, 1993. / Document électronique également accessible en format PDF. CaQCU
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Neutralisation et dissolution des intermétalliques de fer dans les alliages Al-Si /Villeneuve, Carl, January 1998 (has links)
Mémoire (M.Eng.)--Université du Québec à Chicoutimi, 1998. / Document électronique également accessible en format PDF. CaQCU
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Paramètres métallurgiques contrôlant l'évolution microstructurale dans les alliages de fonderie Al-Si-Mg et Al-Si-Cu /Liu, Li, January 1900 (has links)
Thèse (D.Eng.) -- Université du Québec à Chicoutimi, 2004. / Bibliogr.: f. [252]-266. Document électronique également accessible en format PDF. CaQCU
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