Thesis (M.S.)--West Virginia University, 2002. / Title from document title page. Document formatted into pages; contains x, 113 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 108-113).

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Cressler, John D.; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen; Committee Member: Shen, Shyh-Chiang; Committee Member: Zhou, Hao Min.

Thesis (Ph.D.) - Carleton University, 2007. / Includes bibliographical references (p. 194-201). Also available in electronic format on the Internet.

Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 82-92). Also available in electronic format on the Internet.

Typescript. Includes bibliographical references.

Thesis (doctoral)--VTT Micronova, 2006. / Includes bibliographical references. Also available on the World Wide Web.

Orientador: Maria Glória Caño de Andrade / Resumo: Este trabalho é baseado no estudo do comportamento de um diodo PIN de multicamadas utilizado como célula solar. Esse estudo é desenvolvido por meio de simulações em ambiente virtual, validada a partir de dados experimentais, e tem como foco principal o comportamento da geração de corrente pelo dispositivo, tanto na interação entre o dispositivo e uma determinada faixa do espectro luminoso, como na influência que as alterações nas dimensões dessa célula solar podem trazer na tensão gerada. O diodo PIN proposto encontra-se em uma lâmina SOI (Silicon On Insulator) com uma potencial aplicação destinada para a alimentação de circuitos que necessitam de ultrabaixa potência (ULP – Ultra Low Power), tais como sensores de campo para monitoramento e circuitos subcutâneos para monitoramento médico. É construído por uma camada dupla com diferentes semicondutores (silício e germânio) e, através de alterações em sua estrutura (mudança dos materiais e das dimensões), será verificado o comportamento dos principais parâmetros de uma célula solar, tais como fator de forma (FF), corrente fotogerada, tensão de circuito aberto, corrente de curto-circuito, tensão e corrente de trabalho e potência gerada pelo dispositivo. Adicionalmente, é também analisado o comportamento de penetração e absorção do espectro luminoso na célula solar e a existência de alterações nos parâmetros medidos quando há alteração na posição das camadas de semicondutores, com a finalidade de demonstrar que o incremento de uma... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: This work is based on the study of multilayer PIN diode used as a solar cell. This study was developed through simulations in a virtual environment with the main focus of the generation current by the device so much in the interaction between the device and a range of the light spectrum as well as in the influence the changes in the dimensions of the solar cell may bring in the voltage generated. It is composed of a double layer with different semiconductors (silicon and germanium), and though changes in its structure (materials and dimensions change), it will be verified the behavior of main parameters of a solar cell, such as Fill Factor (FF), photogenerated current, open-circuit voltage, short circuit current, work voltage and work current and the generated power will by the device. Additionally, it was also verified the behavior of the penetration and absorption of the light spectrum in the solar cell, and the existence of changes in the measured parameters when there is a change of position in the semiconductor layers, to demonstrate that the increase of a germanium layer may bring to the device concerning entirely silicon device. The results obtained indicate that there was an increase in the photogeneration when the germanium layer is positioned above the silicon layer. This way, this work demonstrates that small changes in the construction and the thickness of the lateral PIN diode used as a solar cell provide an increase in efficiency of more than 136% when comparing... (Complete abstract click electronic access below) / Mestre

No description available.

Extreme environments pose major obstacles for electronics in the form of extremely wide temperature ranges and hazardous radiation. The most common mitigation procedures involve extensive shielding and temperature control or complete displacement from the environment with high costs in weight, power, volume, and performance. There has been a shift away from these solutions and towards distributed, in-environment electronic systems. However, for this methodology to be viable, the requirements of heavy radiation shielding and temperature control have to be lessened or eliminated. This work gained new understanding of the best practices in analog circuit design for extreme environments. Major accomplishments included the over-temperature -180 C to +120 C and radiation validation of the SiGe Remote Electronics Unit, a first of its kind, 16 channel, sensor interface for unshielded operation in the Lunar environment, the design of two wide-temperature (-180 C to +120 C), total-ionizing-dose hardened, wireline transceivers for the Lunar environment, the low-frequency-noise characterization of a second-generation BiCMOS process from 300 K down to 90 K, the explanation of the physical mechanisms behind the single-event transient response of cascode structures in a 45 nm, SOI, radio-frequency, CMOS technology, the analysis of the single-event transient response of differential structures in a 32 nm, SOI, RF, CMOS technology, and the prediction of scaling trends of single-event effects in SOI CMOS technologies.

Thesis (M. App. Sc.)--Carleton University, 2004. / Includes bibliographical references (p. 110-113). Also available in electronic format on the Internet.