M.Sc. (Physics) / Amorhous silicon is one of the most promising materials for large area solar cells for terestrial photovoltaic applications. Unfortunately these cells suffer from two serious problems: the efficiencies drop when laboratory processes are scaled up and the cells degrade after some exposure to sunlight. The exact causes of these two problems are still unknown. In this project some aspects of the above two problems where investigated. The drop in efficiency due to scaling up of laboratory processes can be ascribed to macroscopic inhomogeneities in the film. An investigation was done by changing the chamber geometry and gas flow pattern to establish empirical conditions to obtain films with maximum macroscopic homogeneity. It was found that a uniform electric field above the substrate was the most important factor determining the macroscopic homogeneity of the film. The hydronamic gas flow pattern was of secondary importance. Some techniques to obtain a uniform electric field has been devised. The photo-degradation was investigated by illuminating films of o-Si.H with simulated sunlight for different lenghts of time. The change in the electrical and optical properties of the intrinsic films were determined as function of total photon flux. No change in the optical properties could be detected. The effect of the photo-degradation manifests itself in a drop in the the dark conductivity and photoconductivity. The observed phenomena is explained in terms of photo-induced deep levels in the gap. The Fermi level shifts to the middle of the gap due to these defect states, causing a drop in the free carrier concentration and conductivity. These defect levels increase the absorptiom coefficient in the long wavelength region, but they also decrease the lifetime of the photo-generated carriers. The photo-induced defects were investigated with the CPM-technique. A large part of this project involved the construction and commissioning of the CPM-apparatus. It was found that the light introduced two types of defects at energies 0.5 eV and 0.75 eV below the conduction band edge. The concentration of the defects increases with illumination, but saturates after about 24 hours of illumination. The defects could almost completely be annealed at ISOaC. The photo-degradation of o-Si.H solar cells is ascribed to the reduction in the carrier lifetimes of photo-generated carriers due to recombination at these defect centers.

Graphene is a single sheet of graphite. While bulk graphite is semimetal, graphene is a zero bandgap semiconductor. Band structure calculations show graphene has a linear energy dispersion relation in the low energy region close to the Dirac points where the conduction band and the valence band touch. Carriers in graphene are described as massless Dirac fermions in contrast to massive carriers in normal metals and semiconductors that obey a parabolic energy dispersion relation. The uniqueness of graphene band structure indicates its peculiar electronic transport properties. In this thesis work, single- and multi-layer graphene films epitaxially grow on either the Si face or the C face of SiC substrates in a homemade induction vacuum chamber by thermal decomposition of SiC at high temperatures. The surface morphology and crystal structure of epitaxial graphene are studied with surface analysis tools. The transport properties of epitaxial graphene are studied by magnetotransport experiments. An epitaxial graphene film turns out to be a multilayered graphene because carriers in epitaxial graphene act as those in single layer graphene. Top gated and side gated epitaxial graphene field effect transistors (FETs) have also been successfully fabricated. These systematic studies unambiguously demonstrate the high quality of epitaxial graphene and the great potential of epitaxial graphene for electronic applications

The deposition of hydrocarbons on silicon substrates is a topic of wide interest. This is generally related to the technological importance of silicon carbide (SiC) and a growing interest in graphene and graphitic materials. Methods for producing these materials predominantly involve high processing temperatures. In the case of SiC, these high processing temperatures often result in the formation of surface defects, which compromise the electronic properties of the material. In an effort to grow SiC films at low temperatures, a technique known as electron-beam chemical vapor deposition (EBCVD) has been developed. Most electron beam deposition techniques employ a focused beam of high-energy (20-30 keV) electrons to form nanometer-sized solid deposits on a surface. However, in an effort to deposit macroscale films, a broad beam of low-energy electrons was used. In addition to investigating the applications of low-energy electrons in semiconductor film growth, the fundamental chemical and physical processes induced by the bombardment of adsorbate-covered surfaces with low-energy electrons were examined. Specifically, the electron-stimulated desorption of various adsorbate-substrate systems such as acetylene adsorbed on silicon, graphene oxide on silicon, and ultrathin graphite films on silicon carbide have been investigated. The yields of cation and neutral desorbates as a function incident electron energy were measured, appearance thresholds were determined and mechanisms of desorption were proposed.