This thesis deals with modeling dynamics of printing machine, made by SOMA Engineering, in toolbox SimScape of simulation program Simulink/Matlab. There are descibed properties, progress, important principles and laws of modeling in this toolbox. The first part is focused on creating models, which consist as mechanical as eletrical and control parts. In the second part is explained how to create user interface to control models and creating standalone application, executable without installation of Matlab or Simulink. In last part is explained principle of identification parameters of material from the measured data, using an optimalization algorithm Nelder-Mead. Created models and identification algorithm are controlled via user interface.

The focus of this thesis work was the development of an approachto couple a previosly existing Thermal Energy Storage (TES) modelwritten in C++ with a Simulink/Simscape plant model to simulate anAdvanced Adiabatic Compressed Air Energy Storage (AA-CAES) plant.After the creation and validation of such tool, the complete modelwas used to run simulations, with the aim of assessing the AA-CAESplant's performance under multiple patterns of charge anddischarge.Most of the works found in the literature only provide values ofstorage efficiency obtained from analytical approaches, whilethose that use simulation tools provide average values ofefficiencies when the plant is performing a series of identicalcycles of charge and discharge. During this thesis project,instead, simulations were performed for consecutive irregularcycles determined as the plant response to the electric grid powerrequest. The average efficiency values obtained provide thereforea better representation of how the plant would perform in realapplications.The results show that, under the assumptions made, the AA-CAESplant's overall storage efficiency is influenced very weakly byalterations of the charge-discharge patterns, and that goodperformances can be expected not only for identical chargedischargeconsucutive cycles, but for any pattern that observesthe cavern pressure limits, as long as the thermal energy storageis sized wisely.In addition, a sensitivity analysis was performed in order toassess the influence of turbomachinery efficiency on overallstorage efficiency, for a specified plant layout. The results showthat the turbine efficiency is the most affecting parameter to theplant's performance, while the impact of the main compressors'sinefficiency is mitigated by the thermal recovery that takes placein the TES.The present work confirms that AA-CAES is a promising technologyand that storage efficiencies above 70% can be achieved even inrealistic production scenarios.Finally, future steps for more accurate simulations of plants'performances and more detailed energy production scenarios areproposed.MSc ET 18007Examinator: Joakim WidénÄmnesgranskare: Ane HåkanssonHandledare:

Like cell to the human body, transistors are the basic building blocks of any electronics circuits. Silicon has been the industries obvious choice for making transistors. Transistors with large size occupy large chip area, consume lots of power and the number of functionalities will be limited due to area constraints. Thus to make the devices smaller, smarter and faster, the transistors are aggressively scaled down in each generation. Moore's law states that the transistors count in any electronic circuits doubles every 18 months. Following this Moore's law, the transistor has already been scaled down to 14 nm. However there are limitations to how much further these transistors can be scaled down. Particularly below 10 nm, these silicon based transistors hit the fundamental limits like loss of gate control, high leakage and various other short channel effects. Thus it is not possible to favor the silicon transistors for future electronics applications. As a result, the research has shifted to new device concepts and device materials alternative to silicon. Carbon is the next abundant element found in the Earth and one of such carbon based nanomaterial is graphene. Graphene when extracted from Graphite, the same material used as the lid in pencil, have a tremendous potential to take future electronics devices to new heights in terms of size, cost and efficiency. Thus after its first experimental discovery of graphene in 2004, graphene has been the leading research area for both academics as well as industries. This dissertation is focused on the analysis and optimization of graphene based circuits for future electronics. The first part of this dissertation considers graphene based transistors for analog/radio frequency (RF) circuits. In this section, a dual gate Graphene Field Effect Transistor (GFET) is considered to build the case study circuits like voltage controlled oscillator (VCO) and low noise amplifier (LNA). The behavioral model of the transistor is modeled in different tools: well accepted EDA (electronic design automation) and a non-EDA based tool i.e. \simscape. This section of the dissertation addresses the application of non-EDA based concepts for the analysis of new device concepts, taking LC-VCO and LNA as a case study circuits. The non-EDA based approach is very handy for a new device material when the concept is not matured and the model files are not readily available from the fab. The results matches very well with that of the EDA tools. The second part of the section considers application of multiswarm optimization (MSO) in an EDA tool to explore the design space for the design of LC-VCO. The VCO provides an oscillation frequency at 2.85 GHz, with phase noise of less than -80 dBc/Hz and power dissipation less than 16 mW. The second part of this dissertation considers graphene nanotube field effect transistors (GNRFET) for the application of digital domain. As a case study, static random access memory (SRAM) hs been design and the results shows a very promising future for GNRFET based SRAM as compared to silicon based transistor SRAM. The power comparison between the two shows that GNRFET based SRAM are 93% more power efficient than the silicon transistor based SRAM at 45 nm. In summary, the dissertation is to expected to aid the state of the art in following ways: 1) A non-EDA based tool has been used to characterize the device and measure the circuit performance. The results well matches to that obtained from the EDA tools. This tool becomes very handy for new device concepts when the simulation needs to be fast and accuracy can be tradeoff with. 2)Since an analog domain lacks well-design design paradigm, as compared to digital domain, this dissertation considers case study circuits to design the circuits and apply optimization. 3) Performance comparison of GNRFET based SRAM to the conventional silicon based SRAM shows that with maturation of the fabrication technology, graphene can be very useful for digital circuits as well.

Electrical energy is used at approximately the rate of 15 Terawatts world-wide. Generating this much energy has become a primary concern for all nations. There are many ways of generating energy among which the most commonly used are non-renewable and will extinct much sooner than expected. Very active research is going on both to increase the use of renewable energy sources and to use the available energy with more efficiency. Among these sources, solar energy is being considered as the most abundant and has received high attention. The mobile phone has become one of the basic needs of modern life, with almost every human being having one.Individually a mobile phone consumes little power but collectively this becomes very large. This consideration motivated the research undertaken in this masters thesis. The objective of this thesis is to design a model for solar power based charging circuits for mobile phone using Simulink(R). This thesis explains a design procedure of solar power based mobile charger circuit using Simulink(R) which includes the models for the photo-voltaic array, maximum power point tracker, pulse width modulator, DC-DC converter and a battery. The first part of the thesis concentrates on electron level behavior of a solar cell, its structure and its electrical model.The second part is to design an array of solar cells to generate the desired output. Finally, the third part is to design a DC-DC converter which can stabilize and provide the required input to the battery with the help of the maximum power point tracker and pulse width modulation. The obtained DC-DC converter is adjustable to meet the requirements of the battery. This design is aimed at charging a lithium ion battery with nominal voltage of 3.7 V, which can be taken as baseline to charge different types of batteries with different nominal voltages.

Human body temperature is an important indicator of physical performance and condition in terms of comfort, heat or cold stress. The aim of this research was to develop Temperature Sensing Fabric (TSF) for continuous temperature measurement in healthcare applications. The study covers the development and manufacture of TSF by embedding fine metallic wire into the structure of textile material using a commercial computerised knitting machine. The operational principle of TSF is based on the inherent propensity of a metal wire to respond to changes in temperature with variation in its electrical resistance. Over 60 TSF samples were developed with combinations of different sensing elements, two inlay densities and highly textured polyester yarn as the base material. TSF samples were created using either bare or insulated wires with a range of diameters from 50 to 150 μm and metal wires of nickel, copper, tungsten, and nickel coated copper. In order to investigate the Temperature-Resistance (T-R) relationship of TSF samples for calibration purposes, a customised test rig was developed and monitoring software was created in the LabVIEW environment, to record the temperature and resistance signals simultaneously. TSF samples were tested in various thermal environments, under laboratory conditions and in practical wear trials, to analyse the relationship between the temperature and resistance of the sensing fabric and to develop base line specifications such as sensitivity, resistance ratio, precision, nominal resistance, and response time; the influence of external parameters such as humidity and strain were also monitored. The regression uncertainty was found to be less than in ±0.1°C; the repeatability uncertainty was found to be less than ±0.5°C; the manufacturing uncertainty in terms of nominal resistance was found to be ± 2% from its mean. The experimental T-R relationship of TSF was validated by modelling in the thermo-electrical domain in both steady and transient states. A maximum error of 0.2°C was found between the experimental and modelled T-R relationships. TSF samples made with bare wire sensing elements showed slight variations in their resistance during strain tests, however, samples made with insulated sensing elements did not demonstrate any detectable strain-dependent-resistance error. The overall thermal response of TSF was found to be affected by basal fabric thickness and mass; the effect of RH was not found to be significant. TSF samples with higher-resistance sensing elements performed better than lower-resistance types. Furthermore, TSF samples made using insulated wire were more straightforward to manufacture because of their increased tensile strength and exhibited better sensing performance than samples made with bare wire. In all the human body wear trials, under steady-state and dynamic conditions both sensors followed the same trends and exhibited similar movement artifacts. When layers of clothing were worn over the sensors, the difference between the response of the TSF and a high-precision reference temperature were reduced by the improved isothermal conditions near the measurement site.

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The master’s thesis is focused on the creation of models of DC/DC converters and control program for input parameters and their configuration. The first part is theoretical and she is dedicated to the description of the program Matlab. The second chapter is dedicated to DC/DC converters. Their function is described there and the necessary equations for the design are derived. All of this is complemented by the calculation of line losses in semiconductor elements and the design of voltage and current regulator. The last two parts deal with the description of the created models in Simulink and control program in a graphical environment. The created program is able to edit and recalculate parameters of the converters, calculate line losses on semiconductor components, perform a model simulation or open it.