This thesis deals with the combined ultra-high vacuum (UHV) and electrochemical (EC) studies of selected iron oxide surfaces, namely Fe3O4(001) and -Fe2O3(012). The state-of- the-art knowledge regarding these surfaces is briefly reviewed, and importance of understanding these materials in the electrochemical environment is discussed. The design of the transfer system between UHV and EC environment is presented; individual features of the system are thoroughly discussed and the system is used for testing the stability of the Fe3O4(001) (2×2)R45° surface reconstruction in ambient conditions. The experimental results presented in this thesis show that the Fe3O4(001) (2×2)R45° reconstruction, utilized as an adatom array for single atom catalysis studies, survives both exposure to air and to liquid water, if the exposure is achieved in well-controlled fashion. Further, this thesis presents the first-ever atomic scale scanning tunneling microscopy (STM) study of the -Fe2O3(012) surface, which is important for photoelectrochemical water splitting. STM images of two surface reconstructions of the -Fe2O3(012) surface known to date are presented. A bulk terminated model of the (1×1) reconstruction is confirmed and a novel surface structure model for the (2×1) reconstructed surface is proposed. Adsorption studies of H2O and O2 on the (2×1) reconstructed surface are documented by timelapse STM.

Ce travail de thèse décrit la première observation directe de particules associées à la déplétion quantique et de premières mesures dans l’espace des impulsions d’un superfluide sur réseau. Ces observations ont été réalisées à partir d'un gaz dégénéré d'Hélium métastable sur un tout nouvel dispositif expérimental, dont la construction a été terminée au cours de cette thèse. Permise par l’Hélium métastable, notre détection électronique sensible à l’atome unique donne accès à la distribution tridimensionnelle dans l’espace des impulsions k.Nous avons d’abord développé une approche hybride pour la réalisation de condensats de Bose-Einstein, qui utilise un piège magnétique comme réservoir du piège dipolaire. Cette méthode permet la production rapide de condensats de Bose-Einstein toutes les 6 secondes sur notre expérience. Nous avons alors pu observer, pour la première fois, les particules excitées hors du condensat à cause des interactions (déplétion quantique). En particulier, nous avons observé la loi de puissance en 1/k4 dans la distribution pour de larges impulsions k, comme attendue dans la théorie de Bogoliubov. Enfin nous avons étudié les distributions de superfluide sur réseau. Il s’agit d’une première mesure de la distribution en impulsion dans un réseau comme le démontre les simulations numériques (Monte-Carlo quantique). Les effets de températures sur les distributions mesurées sont extrêmement visibles, ce qui ouvre la voie à une thermométrie des superfluides sur réseau. / In this thesis, we report the first observation of the particles associated with the quantum depletion and the first measurements of the momentum distribution of correlated superfluid lattice bosons. We performed the experiment with a degenerate metastable Helium gas with a novel experimental setup. Making possible with metastable Helium, our electronic detection allows single-atom detection in momentum space k.Firsly, we have demonstrated a new approach to Bose-Einstein condensation of metastable Helium using a hybrid trap, consisting of a magnetic quadrupole and a crossed optical dipole trap. It results in production of a condensate every 6 seconds. Then we observed the excited particles out of the condensate wavefunction due to presence of the interactions (quantum depletion). We observe atom distributions decaying at large momenta k with the 1/k4 power-law predicted by Bogoliubov theory. Furthermore we studied the three-dimensional far field distribution of correlated superfluid lattice bosons. The momentum distributions of the trapped atoms calculated with an ab-initio Monte-Carlo Worm algorithm for the experimental parameters are in excellent agreement with the measured distributions. The finite temperature effect is not negligible, paving the way for a precise thermometry.

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[ES] En esta Tesis se ha estudiado en profundidad la reacción de semi-hidrogenación de alquinos catalizada por materiales de paladio. Más especificamente, esta Tesis empieza estudiando un sistema simple para la semi-hidrogenación de alquinos: clústeres de paladio en disolución formados a partir de la reducción in situ de sales de paladio, en el Capítulo 3. Este concepto, se usará posteriormente para sintetizar un catalizador soportado y soluble en el Capítulo 4. Estos clústeres catalizan de forma muy eficiente la semi-hidrogenación de alquinos internos. Entre otros alquinos internos estudiados en el Capítulo 4, los 1,4-alquinodioles se investigaron en más profundidad en el Capítulo 5, donde se muestra su habilidad para desactivar la ruptura del hidrógeno molecular sobre catalizadores de paladio. Además, se estudiará su desimetrización diastereoisomérica durante la reacción semi-hidrogenación. La semi-hidrogenación de alquinos terminales, a pesar de ser típicamente más sencilla, no procede de forma eficiente en los sistemas catalíticos de los capítulos anteriores. Es por ello que en el Capítulo 6 se pone énfasis en estos alquinos terminales y, mediante la interacción entre fosfinas y catalizadores de paladio sobre carbono, se consigue una hidrogenación selectiva de estos sustratos sobre catalizadores clásicamente no selectivos. Finalmente, el último Capítulo 7 se dedica a la semi-hidrogenación del acetileno, el alquino con mayor presencia industrial a nivel global con diferencia. Los elevados requerimientos de rendimiento y el alto volumen de producción del proceso de semi-hidrogenación de acetileno se satisfacen en este caso mediante el uso de un MOF con dímeros de Pd-Au. / [CA] En aquesta Tesi s'ha estudiat en profunditat la reacció de semi-hidrogenació d'alquins catalitzada per materials de pal·ladi. Més especificament, aquesta Tesi comença estudiant un dels sistemes més simples per a la semi-hidrogenació d'alquins: clústers de pal·ladi en dissolució formats a partir de la reducció "in situ" de sals de pal·ladi en el Capítol 3. Aquest concepte s'empra posteriorment per a sintetitzar un catalitzador suportat i soluble en el Capítol 4. Aquests clústers catalitzen de forma molt eficient la semi-hidrogenació dels alquins interns. Entre d'altres alquins interns estudiats en el Capítol 4, els 1,4-alquindiols s'investiguen en més profunditat en el Capítol 5, on es mostra la seva habilitat per a desactivar la ruptura de l'hidrogen molecular sobre catalitzadors de pal·ladi, així com la desimetrizació diastereoisomérica que sofreixen durant la reacció de semi-hidrogenació. Malgrat ser típicament més senzilla, la semi-hidrogenació d'alquins terminals no procedeix de manera eficient en els sistemes catalítics dels capítols anteriors. És per això que en el Capítol 6 es posa èmfasi en aquests alquins terminals i, mitjançant la interacció entre fosfines i catalitzadors de pal·ladi sobre carboni, s'aconsegueix una hidrogenació selectiva d'aquests substrats sobre catalitzadors clàssicament no selectius. Finalment, l'últim Capítol 7 es dedica a la semi-hidrogenació de l'acetilè, un dels alquins terminals amb major presència industrial a nivell global. Els elevats requisits de rendiment i l'elevat volum de producció d'aquest procés de semi-hidrogenació d'acetilè se satisfan, en aquest cas, mitjançant l'ús d'un MOF amb dímers de Pd-Au. / [EN] In this Thesis, the semi-hydrogenation reaction of alkynes catalyzed by palladium materials has been studied in depth. More specifically, this Thesis starts by studying a very simple system for the semi-hydrogenation of alkynes: palladium clusters in solution formed from the in situ reduction of palladium salts, in Chapter 3. This concept will be subsequently used to synthesize a supported and soluble catalyst in Chapter 4. These clusters catalyze very efficiently the semi-hydrogenation of internal alkynes. Among other internal alkynes studied in Chapter 4, 1,4-alkynodiols are further investigated in Chapter 5, where their ability to deactivate molecular hydrogen cleavage over palladium catalysts is shown, as well as the diastereoisomeric desymmetrization that they undergo during the semi-hydrogenation reaction. Despite being typically simpler, the semi-hydrogenation of terminal alkynes does not proceed efficiently in the catalytic systems of the previous chapters. Hence, in Chapter 6, emphasis is placed on these terminal alkynes and, by means of the interaction between phosphines and palladium-on-carbon catalysts, a selective hydrogenation of these substrates over classically non-selective catalysts is achieved. Finally, the last Chapter 7 is devoted to the semi-hydrogenation of acetylene, the alkyne with the largest global industrial presence by far. The high yield and production volume requirements of the acetylene semi-hydrogenation process are met in this case by using a MOF with Pd-Au dimers. / Ballesteros Soberanas, J. (2023). Semi-hidrogenación de alquinos con nuevos catalizadores de paladio [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/194631

We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.

We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.