This thesis presents realization of two shunt, capacitive contact RF MEMS switches and two RF MEMS SPDT switches for microwave and millimeter-wave applications, two zero-level package structures for RF MEMS switches and development trials of a BCB based zero level packaging process cycle. Two shunt, capacitive contact RF MEMS switches for 26 GHz and 12 GHz operating frequencies are designed, fabricated and consistencies between fabricated devices and designs are shown through RF measurements. For the switch design at 26 GHz and at the operating frequency, return loss in the upstate is measured to be 27.61 dB, insertion loss and isolation in the downstate is measured to be 0.21 dB and 27.16 dB, respectively. For the switch design at 12 GHz and at the operating frequency, return loss in the upstate is measured to be 38.69 dB, insertion loss and isolation in the downstate is measured to be 0.05 dB and 25.84 dB, respectively. Quite accurate circuit models have been obtained for both of the RF MEMS switches. Two RF MEMS SPDT switches, which utilize the shunt, capacitive contact switches as building blocks are designed through circuit simulations. These two designs are fabricated and their RF measurements have been completed. It is shown from circuit model simulations that, the performances of the fabricated devices and desired responses corresponded to each other. For the SPDT switch design at 26 GHz, return loss at the input port is measured to be 12 dB and insertion loss is measured to be 1.24 dB. For the SPDT switch design at 12 GHz, return loss at the input port is measured to be 5.6 dB and insertion loss is measured to be 0.49 dB. The reason behind the unexpectedly bad performances has been investigated and discovered. The bad performances were due to a common mistake in the layouts of both SPDT switches. These mistakes are corrected in the circuit models and expected performances are obtained. Two different zero-level package structures which use high-resistive Si wafers have been suggested and required design changes have been made on the RF MEMS shunt, capacitive contact switches and SPDT switches in order to minimize the package effects. For this purpose polygonal CPW transitions have been designed and integrated into the designs, followed by the necessary tunings in the switch structures for which EM and circuit simulations are utilized. For the suggested package structures to be produced, two possible process cycles have been studied. One of the process flows was based on KOH anisotropic Si etching and the other one was based on DRIE (Deep Reactive Ion Etching). Great progress has been achieved in the latter process cycle, however this process cycle still needs some more study and it could not be completed in the time required for this thesis study.

In this thesis, the circuits which comprise the front-end of a millimeter-wave transmit-receive module are investigated using a state-of-the-art 90 nm SiGe BiCMOS process for use in radar remote sensing applications. In Chapter I, the motivation for a millimeter-wave radar in the context of space-based remote sensing is discussed. In addition, an overview of Silicon-germanium technology is presented, and the chapter concludes with a discussion of design challenges at millimeter-wave frequencies. In Chapter II, a brief history of radar technology is presented - the motivations leading to the development of the transmit-receive module for active electronically scanned arrays are discussed, and the critical components which reside in nearly every high-frequency transmit-receive module are introduced. In Chapter III, the design and results of a W-band single-pole, double-throw switch using SiGe p-i-n diodes are discussed. In particular, the design topology and methods used to achieve low-loss and high power handling over a wide matching bandwidth without sacrificing isolation are described. In Chapter IV, the design and results of a W-band low-noise amplifier using SiGe HBT's are discussed. The design methodologies used to achieve high gain and exceptional noise performance over a wide matching bandwidth are described. Concluding remarks and a discussion of future work are in Chapter V.

The ability to control the path a signal takes through microwave circuitry is crucial when designing RF systems. The component that allows for the control of the signal path is called a switch, and it is the microwave component that this thesis will focus on. Switches are widely used in the growing defense and space industries, both of which have strict requirements on their systems. This thesis aims to investigate four switch topologies and compare them to establish which topology is most suitable in high-performance systems where high isolation and wide bandwidths are essential parameters. The different topologies were simulated using Cadence AWR Microwave Studio to evaluate the parameters of interest. Built-in models for PIN diodes were employed to capture the nonlinear nature of the diodes and quantify the linearity of the switches. Measurements of PIN diodes using a spectrum analyzer and a vector network analyzer were used to confirm that the models of the PIN diode resembled the actual characteristics of PIN diodes. Out of the four topologies investigated, the series, shunt, series-shunt and double shunt, it was concluded that the series-shunt topology was most suitable for wideband multiple-throw switches. The double shunt topology was more suitable for SPST switches and narrowband SPDT switches. From this thesis, it will be possible to conclude which topology is most suitable for a particular need and what key design parameters will impact the switch’s performance. / Förmågan att styra vägen en signal tar genom mikrovågskretsar är en avgörande förmåga i konstruktionen av de flesta RF-system. Komponenten som tillåter styrning av signalvägen kallas en omkopplare och är den mikrovågskomponent som detta examensarbete kommer att fokusera på. RFomkopplare kan realiseras på många olika sätt och kan integreras i flera typer av vågledande strukturer såsom mikrostrips, striplines och vågledare. Omkopplingselementen kan realiseras på många sätt, med användning av transistorer och dioder är de mest etablerade sätten. Sådana omkopplare används i stor utsträckning inom försvars- och rymdindustrin som båda har strikta krav på dess komponenter. Avhandlingen syftar därför till att undersöka ett antal switchtopologier och jämföra dessa för att fastställa vilken topologi som är mest lämplig i högpresterande system där hög isolering och breda bandbredder är viktiga parametrar. De olika topologierna simulerades med hjälp av Cadence AWR Microwave Studio för att utvärdera parametrarna av intresse. Den inbyggda modellen för PIN-dioder användes också för att fånga diodernas olinjära natur för att kvantifiera omkopplarnas linjäritet. Mätningar av PIN-dioder med användning av en spektrumanalysator och en Nätverksanalysator gjordes för att bekräfta att modellerna av PIN-dioderna efterliknade PIN-diodernas faktiska beteende. Det fastslogs att series-shunt-topologin var mest lämpad för bredbandsomkopplare med flera utgångar. Dubbel-shunt-topologin var mer lämplig i SPSTomkopplare och i smalbandiga SPDT-omkopplare. Från detta examensarbete kommer det att vara möjligt att dra slutsatser kring vilken topologi som är mest lämplig för ett särskilt behov tillsammans med vilka designparametrar som kommer att påverka omkopplarens prestanda.

[ES] La Teoría de los Modos Característicos, formulada originalmente en 1968, permite obtener un conjunto de valores propios reales y modos de corriente reales que se pueden utilizar para expandir la corriente total en un cuerpo conductor o dieléctrico. La información proporcionada por las corrientes características (modos) y los valores propios se puede utilizar para realizar el diseño de la antena de una manera sistemática. La gran ventaja de la Teoría de los Modos Característicos sobre otros métodos de diseño tradicionales es la clara visión física que se proporciona sobre los fenómenos que contribuyen a la radiación de la antena. Esta visión física permite comprender mejor el funcionamiento de la antena, de modo que el diseño y la optimización de la misma se pueden llevar a cabo de forma rápida y coherente. El objetivo de esta Tesis es extender el uso de la Teoría de los Modos Característicos al diseño de antenas reconfigurables de manera sistemática. El uso de antenas reconfigurables se ha vuelto cada vez más importante en los últimos años, como una forma de cumplir con los requisitos impuestos y el rendimiento deseado en los nuevos sistemas de comunicaciones inalámbricas. El enfoque de hacer una antena reconfigurable implica la capacidad de una antena para ajustar sus características, como la frecuencia de operación, el diagrama de radiación y la polarización. Diversos componentes activos como diodos varactor, diodos PIN, MEMS, interruptores de RF, elementos fotoconductores o materiales inteligentes pueden usarse para cambiar estas características básicas de la antena. La reconfiguración dinámica de los parámetros operativos de una antena conduce a un sistema de comunicación flexible. Las antenas reconfigurables por frecuencia permiten el mantenimiento de múltiples estándares mientras se mantienen las mismas características físicas de las antenas. La antena reconfigurable por radiación y la diversidad de polarización permiten aumentar la eficiencia de las comunicaciones interiores al reducir significativamente el nivel de interferencia. En esta tesis, la investigación gira en torno al análisis y diseño de estructuras de antenas con la Teoría de los Modos Característicos de manera que los parámetros de las antenas sean sintonizables, por lo que el diseño final de la estructura es una antena reconfigurable que modifica dinámicamente su rendimiento de una forma razonada y coherente. Se analizarán los modos característicos y sus propiedades para diseñar antenas reconfigurables, que combinarán diferentes modos y producirán diferentes características de radiación. En este trabajo se implementará un método sistemático para obtener las características requeridas de la antena. Además, se analizarán y evaluarán diferentes técnicas de conmutación para evaluar su efecto real en la antena y en los modos característicos. El trabajo se centrará en el diseño de pequeñas antenas reconfigurables para aplicaciones IoT y sistemas 5G. / [CA] La Teoria dels Modes Característics, formulada originalment el 1968, permet obtenir un conjunt de valors propis reals i modes de corrent reals que es poden utilitzar per expandir el corrent total en un cos conductor o dielèctric. La informació proporcionada pels corrents característics (modes) i els valors propis es pot utilitzar per fer el disseny de l'antena d'una manera sistemàtica. El gran avantatge de la Teoria dels Modes Característiques sobre altres mètodes de disseny tradicionals és la clara visió física que es proporciona sobre els fenòmens que contribueixen a la radiació de l'antena. Aquesta visió física permet comprendre millor el funcionament de l'antena, de manera que el disseny i l'optimització de la mateixa es poden dur a terme de forma ràpida i coherent. L'objectiu d'aquesta Tesi és estendre l'ús de la Teoria dels Modes Característics al disseny d'antenes reconfigurables de manera sistemàtica. L'ús d'antenes reconfigurables s'ha tornat cada cop més important en els darrers anys, com una forma de complir amb els requisits imposats i el rendiment desitjat en els nous sistemes.temes de comunicacions sense fil. L'enfocament de fer una antenna reconfigurable implica la capacitat duna antena per ajustar les seves característiques, com la frequ¿ència d'operació, el diagrama de radiació i la polarització. Diversos components actius com va donar dos varactor, díodes PIN, MEMS, interruptors de RF, elements fotoconductors o materials intel·ligents poden utilitzar-se per canviar aquestes característiques bàsiques de l'antena. La reconfiguració dinàmica dels paràmetres operatius duna antena condueix a un sistema de comunicació flexible. Les antenes reconfigurables per frequ¿ència permeten el manteniment de múltiples estàndards mentre es mantenen les mateixes característiques físiques de les antenes. L'antena reconfigurable per radiació i diversitat de polarització permeten augmentar l'eficiència de les comunicacions interiors en reduir significativament el nivell dinterferència. En aquesta tesi, la investigació gira al voltant de l'anàlisi i el disseny de estructures d'antenes amb la Teoria dels Modes Característics de manera que els paràmetres de les antenes siguin sintonitzables, per això que el disseny final de lestructura és una antena reconfigurable que modifica dinàmicament el seu rendiment d'una forma raonada i coherent. S'analitzaran els modes característics i les propietats per dissenyar antenes reconfigurables, que combinaran diferents maneres i produiran diferents característiques de radiació. En aquest tractament baix s'implementarà un mètode sistemàtic per obtenir les característiques requerides de l'antena. A més, s'analitzaran i avaluaran diferents tècniques de commutació per avaluar el seu efecte real a la antena i en les maneres característiques. El treball se centrarà en el disseny de petites antenes reconfigurables per a aplicacions IoT i sistemes 5G. / [EN] The Theory of Characteristic Modes, originally formulated in 1968, allows to obtain a set of real eigenvalues and real current modes that can be used to expand the total current on a conducting or dielectric body. The information provided by characteristic eigencurrents (modes) and eigenvalues can be used to perform antenna design in a systematic way. The great advantage of the Theory of Characteristic Modes over other traditional design methods is the clear physical vision provided about the phenomena that contribute to the radiation of the antenna. This physical vision allows to better understand the operation of the antenna, so that the design and the optimization of it can be carried out quickly and coherently. The objective of this Thesis is to extend the use of the Theory of Characteristic Modes to the design of reconfigurable antennas in a systematic way. The use of reconfigurable antennas has become more and more important during the last years, as a way to meet the imposed requirements and desired performance of novel wireless communication systems. The approach of making an antenna reconfigurable implies the capability of an antenna system to adjust its characteristic such as operating frequency, radiation pattern and polarization. Active components such as varactor diodes, PIN diodes, MEMS, RF switches, photoconductive elements or smart materials can be used to change these base characteristics. The dynamic reconfigurability of the operating parameters of an antenna leads to a flexible communication system. Frequency reconfigurable antennas enable multi-standard performances to be maintained while preserving the same physical characteristics of the antennas. Radiation reconfigurable and polarisation diversity antennas enable to increase the efficiency of indoor communications by significantly decreasing the level of interference. In this thesis, the research is turning around the analysis and design of antenna structures with the Theory of Characteristic Modes in a way that the antenna parameters will be tuneable, so the final design of the structure is a reconfigurable antenna that modifies dynamically its performance in a reasoned and coherent way. Characteristic modes and their properties will be analysed in order to design reconfigurable antennas, which combine different modes and produce different radiation characteristics. A systematic method to obtain the required characteristics of the antenna will be implemented during this work. Moreover, different switching techniques will be analysed and evaluated in order to asses their real effect on the antenna and on the characteristic modes. In this work, small reconfigurable antenna prototypes will be designed for IoT applications and 5G systems. / This study was supported by the Spanish Ministry of Science and Innovation (Ministerio Ciencia e Innovación) under project no. PID2019-107885GB-C32 and Generalitat Valenciana under project no. AICO/2019/018. This work has also been supported by the Spanish Ministry of Science, Innovation and Universities (Ministerio Ciencia, Innovación y Universidades) under the project TEC2016- 78028-C3-3-P and by “Centre National pour la Recherche Scientifique et Technique (CNRST, Maroc)” as part of the research excellence scholarships program / Mahlaoui Boudallaa, Z. (2023). Analysis and Design of Reconfigurable Antennas Using the Theory of Characteristic Modes [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/201555

State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented.