The synthesis of complexes [M(OCHMeCH2NMeCH2)2] (5, M = Mg; 7, M = Zn) is described. Treatment of MeHNCH2CH2NMeH (1) with 2-methyloxirane (2) gave diol (HOCHMeCH2NMeCH2)2 (3), which upon reaction with equimolar amounts of MR2 (4, M = Mg, R = Bu; 6, M = Zn, R = Et) gave 5 and 7. The thermal behavior and vapor pressure of 5 and 7 were investigated to show whether they are suited as CVD (= chemical vapor deposition) and/or spin-coating precursors for MgO or ZnO layer formation. Thermogravimetric (TG) studies revealed that 5 and 7 decompose between 80–530 °C forming MgO and ZnO as evidenced by PXRD studies. In addition, TG-MS-coupled experiments were carried out with 7 proving that decomposition occurs by M–O, C–O, C–N and C–C bond cleavages, as evidenced from the detection of fragments such as CH4N+, C2H4N+, C2H5N+, CH2O+, C2H2O+ and C2H3O+. The vapor pressure of 7 was measured at 10.4 mbar at 160 °C, while 5 is non-volatile. The layers obtained by CVD are dense and conformal with a somewhat granulated surface morphology as evidenced by SEM studies. In addition, spin–coating experiments using 5 and 7 as precursors were applied. The corresponding MO layer thicknesses are between 7–140 nm (CVD) or 80 nm and 65 nm (5, 7; spin-coating). EDX and XPS measurements confirm the formation of MgO and ZnO films, however, containing 12–24 mol% (CVD) or 5–9 mol% (spin-coating) carbon. GIXRD studies verify the crystalline character of the deposited layers obtained by CVD and the spin-coating processes.

Die vorliegende Arbeit befasst sich mit der Synthese von Ferrocenyloxy- (FcO-; Fc = Fe(η5-C5H4)(η5-C5H5)) substituierten Silanen, Stannoxanen, Titanocen- und Zirkonocen-Komplexen. Weiterhin wurden Titanocen-Komplexe mit Ferrocenyl-sulfanyl- (FcS-) und Ferrocenylselanyl- (FcSe-) Liganden dargestellt. Das elektrochemische Verhalten dieser Verbindungen wurde mittels Cyclovoltammetrie, Square-Wave-Voltammetrie und in situ UV/Vis-NIR-Spektroskopie untersucht. Das drucklose Niedertemperaturfügen von Kupferwerkstoffen und das Generieren dünner MgO- und ZnO-Schichten auf Si-Substraten mittels CVD und Spin-Coating-Prozesse stellen zwei weitere Kernthemen dieser Arbeit dar. Das Niedertemperaturfügen umfasst die Synthese von Ag(I)-Carboxylaten wie [AgO2CCR2OC(O)OMe] (R = H, Me) und deren Verwendung als Basis-Komponenten in der Entwicklung von Fügepasten. Zur Erzeugung von MgO- und ZnO-Schichten wurden Metall-Dialkoholate des Typs [M(OCHMeCH2NMeCH2)2] (M = Mg, Zn) synthetisiert und mit MOCVD- und/oder Spin-Coating-Techniken abgeschieden.

Thin transparent conductive layers containing ATO nanoparticles are a modern material that has found use in a wide range of optoelectronic applications. For liquid phase deposition there were designed and prepared compositions using a „brick and mortar“ approach combined templating agents. A sol-gel solution formed of inorganic precursors of tin chloride and antimony trichloride in the presence of ATO nanoparticles was mixed with a surfactant to improve the structure and wettability of applied films. Polyethylene glycol, polyoxyethylene (20)cetylether, sodium dioctylsulfosuccinate and polyvinylpyrrolidone were used as templating agents. Thin layers of these compositions were applied by the spin-coating method. Characterized parameters were resistivity, thickness and turbidity. A resul compositions showed relatively good electrical properties and high transparency and a potencial to be used for material printing.

No description available.

Many transition metal oxides exhibit a Metal-Insulator Transition (MIT). This is an interesting phenomenon where the material undergoes a structural phase transition, and the electronic charge is redistributed in the crystal lattice. The crystallographic, optical, electrical, and magnetic properties are drastically changed when a material undergoes a MIT. Vanadium oxides are thermochromic materials, which means that the optical properties change with temperature, closely connected to the MIT. Vanadium sesquioxide (V2O3) experiences a MIT at the transition temperature (Tt) 160-170 K. Below the transition temperature, it is a monoclinic ferromagnetic insulator, and above the transition temperature it becomes a paramagnetic rhombohedral corundum-type metal. In the insulating phase, infrared (IR) light is transmitted, whereas in the metallic phase, IR light is reflected. The aim of this Master thesis is to improve the methodology to produce V2O3 thin films, characterize them, and study how different parameters affect the structural and optical properties of the film. V2O3 thin films were synthesized by sol-gel and deposited by spin-coating on sapphire substrates. Thereafter, the resulting films underwent an annealing process in a reducing atmosphere to achieve crystalline V2O3. The obtained crystal phase was examined by X-ray diffraction. The surface structure and morphology were studied with an optical microscope and scanning electron microscope. The optical transmittance in the IR region was examined by Fourier transform infrared spectroscopy. At last, a laser test was performed on one of the samples. In conclusion, a majority of the thin films consisted of polycrystalline V2O3. The MIT was studied with the optical hysteresis loop, which showed great difference among the different samples studied. The thin film that exhibited best optical properties showed a maximum transmission of 66 % below the Tt, and a minimum transmission of 6 % above the Tt. In comparison to this one, the other samples exhibited lower transmission and a decrease in Tt. This difference was attributed to the different morphologies and crystal orientations of the samples.

С помощью оборудования National Instruments реализованы две установки для нанесения органических покрытий. Установка термовакуумного нанесения с виртуальным прибором «ThermoVac» позволяет производить линейный нагрев испаряемого вещества с фиксированной скоростью до заданной температуры термостатирования в диапазоне от комнатной до 500 °C. Установка для нанесения методом центрифугирования с ВП «SC_organic» позволяет поддерживать заданную скорость вращения подложки в диапазоне от 500 до 9000 об/мин. На базе микрозондовой станции Cascade Microtech MPS150 разработан автоматизированный канал для тестирования мемристорных структур, в режиме многократного чтения и записи. ВП «RW MIM» формирует на выходе SMU источника последовательность импульсов заданной амплитуды и длительности в режимах запись/чтение. Выполнено нанесение и аттестация пленок 5,11-диметил-5,11-дигидроиндоло [3.2-b]карбазола и 5,11-дигексил-5,11-дигидроиндоло[3.2-b]карбазола. По измеренным вольтамперным характеристикам получено, что полупроводник в синтезированных структурах TiN/DMICZ/Au, Ti/DMICZ/Au обладает дырочной проводимостью с подвижностью μ = 4.9∙10-7 см2/(В∙с). Показано, что регистрируемая ВАХ характеризуется петлями гистерезиса, которые свидетельствуют о наличии мемристивного эффекта в образцах TiN/DHICZ/Au. Произведено тестирование исследуемых слоистых структур в режимах многократного чтения/записи. / An automated installation based on National Instruments equipment, two installations for applying organic coatings are implemented. The installation of a thermo vacuum evaporation with a virtual device "ThermoVac" allows linear heating of the evaporated substance at a fixed rate of up to 500 ° C. The centrifugal centrifugation unit with an VI “SC_organic” supports the specified rotation speed of the substrate in the range of 500 to 9000 rpm. Based on the microprobe station Cascade Microtech MPS150, an automated channel was developed for testing memristor structures, in the mode of multiple reading and writing. VI "RW MIM" forms a sequence of pulses of the specified amplitude and duration in the write / read modes at the SMU output of the source. The deposition and validation of 5,11-dimethyl-5,11-dihydroindolo [3.2-b] carbazole and 5,11-dihexyl-5,11-dihydroindolo [3.2-b] carbazole films was performed. From the measured volt-ampere characteristics, it was found that the semiconductor in the synthesized TiN / DMICZ / Au, Ti / DMICZ / Au structures has a hole conductivity with a mobility μ = 4.9 ∙ 10-7 cm2/(V∙s). It is shown that the recorded I-V characteristic is characterized by hysteresis loops that indicate the presence of a memorial effect in TiN / DHICZ / Au samples. The testing of layered structures under test in multiple read / write modes was performed.

Surface coating is widely used in microelectronic industry to produce thin films over surfaces with uneven topography. Such processes are used in fabricating integrated circuits, storage devices, such as magnetic disks, memory devices and optical disks as well as for manufacturing adhesives, magnetic tapes, magazines which can produce thicker films over patterns of similar depth and width at higher speeds. Other applications of film flow over uneven surfaces come from specific designs of surfaces of heat-exchangers and the surfaces of various structured packings used to improve heat and mass transfer operations. The one-dimensional, gravity-driven film-flow of a linear or exponential PTT liquid, flowing either on the outer or on the inner surface of a vertical cylinder or over a planar wall is analyzed. Numerical solution of the governing equations is generally possible. Analytical solutions are derived only for: (i) linear PTT model in cylindrical and planar geometries in the absence of solvent and the affinity parameter set at zero; (ii) linear or exponential PTT model in a planar geometry in the absence of solvent and the affinity parameter the affinity parameter obtains nonzero values; (iii) exponential PTT model in planar geometry in the absence of solvent and the affinity parameter set at zero. Then, the two-dimensional, steady flow of a viscoelastic film over a periodic topography under the action of a body force is studied. It is examined the interplay of elastic, viscous, inertia and capillary forces on the film thickness and planarization efficiency over steep topographical changes of the substrate. The code is validated by verifying that in isolated topographies the periodicity conditions result in fully developed viscoelastic film flow at the inflow/outflow boundaries and that its predictions for Newtonian fluids over 2D topography under creeping flow conditions coincide with those of previous works. Finally, the steady film-flow of a Newtonian fluid has been studied over a trench examining the various types of inclusions that can be formed. It can be distinguished three possible flow configurations when (a) the triple contact points are ‘pinned’ at the lips of the cavity, (b) the triple contact points are at the left side and the bottom of the cavity so that the cavity is not filled with liquid only around its left concave corner and (c) the two triple contact points are at the two sides of the cavity so that its bottom remains empty. / Η μελέτη ρευστών υμένων κατέχει σημαντική θέση στη σύγχρονη επιστήμη και τεχνολογία και συναντάται ευρύτατα σε βιομηχανικές διεργασίες (π.χ. κατασκευή ηλεκτρονικών εξαρτημάτων όπως είναι μικροεπεξεργαστές, ολοκληρωμένα κυκλώματα και συσκευές μνήμης, κατασκευή ψηφιακών αποθηκευτικών μέσων όπως μαγνητικοί δίσκοι, δισκέτες, κασέτες και οπτικοί δίσκοι, διεργασίες φωτολιθογραφικής επικάλυψης και εκτύπωσης όπως επικαλυπτικές ουσίες, μαγνητικές ταινίες και περιοδικά κ.α.). Επιπλέον, οι ρευστοί υμένες χρησιμοποιούνται για την βελτιστοποίηση διεργασιών μεταφοράς θερμότητας και μάζας (εναλλάκτες θερμότητας). Πρώτα αναλύεται η μονοδιάστατη ροή λόγω βαρύτητας ενός υμένα ιξωδοελαστικού ρευστού που ακολουθεί το καταστατικό μοντέλο Phan-Thien and Tanner (PTT) σε γραμμική ή εκθετική μορφή. Το ρευστό ρέει είτε στην εξωτερική είτε στην εσωτερική επιφάνεια ενός κατακόρυφου κυλίνδρου ή σε επίπεδο τοίχωμα. Η αριθμητική επίλυση των διεπουσών εξισώσεων είναι πάντοτε δυνατή. Αναλυτικές εκφράσεις εξάγονται μόνο για (i) γραμμικό μοντέλο PTT σε κυλινδρικές και επίπεδες γεωμετρίες απουσία διαλύτη και η παράμετρος συγγένειας είναι μηδενική, (ii) γραμμικό ή εκθετικό μοντέλο PTT σε επίπεδη γεωμετρία απουσία διαλύτη με μη μηδενική παράμετρο συγγένειας και (iii) εκθετικό μοντέλο PTT σε επίπεδη γεωμετρία απουσία διαλύτη και με μηδενική παράμετρο συγγένειας. Στη συνέχεια μελετάται η δισδιάστατη μόνιμη ροή ενός ιξωδοελαστικού υμένα κατά μήκος περιοδικής τοπογραφίας υπό την επίδραση είτε της βαρύτητας είτε της φυγοκέντρου δύναμης. Εξετάζεται τόσο η επίδραση των ιξωδοελαστικών ιδιοτήτων υπό συνθήκες έρπουσας ροής όσο και των τριχοειδών και αδρανειακών δυνάμεων καθώς και της γεωμετρίας του υποστρώματος στο πάχος του υμένα και στη δυνατότητα εξομάλυνσής του παρά τις απότομες αλλαγές του υποστρώματος. Ο κώδικας ελέγχθηκε μέσω της σύγκρισης των προβλέψεών του με προηγούμενες εργασίες που αφορούν σε Νευτωνικά και σε ιξωδοελαστικά ρευστά. Τέλος, εξετάζεται η δισδιάστατη μόνιμη ροή ενός Νευτωνικού υμένα πάνω από παρόμοια μεταβαλλόμενο υπόστρωμα, ενώ επιτρέπεται να σχηματίζονται εγκλείσματα αέρα μεταξύ του υμένα και του υποστρώματος. Διακρίνονται οι εξής δυνατότητες σχηματισμού εγκλεισμάτων αέρα ανάλογα με τη θέση της κάτω επιφάνειας του υμένα: (α) εμφανίζονται σταθερά σημεία επαφής στις άνω (κυρτές) γωνίες του υποστρώματος, (β) σχηματίζεται έγκλεισμα γύρω από την πρώτη κοίλη γωνία του υποστρώματος και (γ) εμφανίζονται δύο τριπλά σημεία επαφής με τις παράπλευρες επιφάνειες του υποστρώματος.

The continuous downscaling has enforced the device size and oxide thickness to few nanometers. After serving for several decades as an excellent gate oxide layer in complementary metal oxide semiconductor (CMOS) devices, the thickness of SiO2 layer has reached to its theoretical limits. Ultra-thin films of SiO2 can result in severe leakage currents due to direct tunneling as well as maintaining the homogeneity of the layers becomes an additional challenge. The use of a high- (HK) layer can solve these twin concerns of the semiconductor industry, which can also enhance the capacitance due to superior dielectric permittivity and reduce the leakage current by being thicker than the silicon dioxide. This thesis is concerned about the development of solution route fabricated high-k (TiO2, ZrO2 and HfO2) gate dielectrics and the investigation of high-/silicon interfaces by highly sensitive DLTS technique in MOS structures. The solution processing reduce the industrial fabrication cost and the DLTS method has the advantage to accurately measure the interface related defects parameters; such as interface trap density (Dit), capture cross-section (), activation energy (ET) and also distinguish between bulk and interface traps. In this thesis, HK films have been deposited by solution route, the material and electrical properties of the film and the HK/Si interface have been extensively evaluated. IN CHAPTER 1, we have summarized the history and evolution of transistor and it provides the background for the work presented in this thesis. IN CHAPTER 2, we have described the experimental method /technique used for the fabrication and characterization. The advantages and working principals of spin-coating and DLTS techniques are summarized. IN CHAPTER 3, we have presented the preparation and optimization of TiO2 based HK layer. Structural, surface morphology, optical electrical and dielectric properties are discussed in details. A high- 34 value is achieved for the 36 nm TiO2 films. IN CHAPTER 4, we presented the technologically relevant Si/TiO2 interface study by DLTS technique. The DLTS analysis reveals a small capture cross-section of the interface with acceptable interface state density. IN CHAPTER 5, we have focused on the fabrication of amorphous ZrO2 films on p-Si substrate. The advantage of amorphous dielectric layer is summarized as first dielectric reported SiO2 is used in its amorphous phase. The moderate-15 with low leakage current density is achieved. IN CHAPTER 6, the HfO2 films are prepared using hafnium isopropoxide and a high value of dielectric constant 23 is optimized with low leakage current density. The current conduction mechanisms are discussed in details. IN CHAPTER 7, we have probed the oxygen vacancy related sub-band-gap states in HfO2 by DLTS technique. IN CHAPTER 8, we have presented the summary of the dissertation and the prospect research directions are suggested. In summary, we have studied the group IVB transition metal elemental oxides (TMEO); TiO2, ZrO2 and HfO2 thin films in the MOS structure, as a possible replacement of SiO2 gate dielectric. For the TMEO films deposition a low-cost and simple method spin-coating was utilized. The film thicknesses are in the range of 35 – 39 nm, which was measured by ellipsometry and confirmed with the cross-sectional SEM. A rough surface of gate dielectric layer can trap the charge carrier and may cause the Fermi level pinning, which can cause the threshold voltage instabilities. Hence, surface roughness of oxide layer play an important role in CMOS device operation. We have achieved quite good flat surfaces (RMS surface roughness’s are 0.2 – 2.43 nm) for the films deposited in this work. The TiO2 based MOS gate stack shows an optimized high dielectric constant ( 34) with low leakage current density (3.710-7 A.cm-2 at 1 V). A moderate dielectric constant ( 15) with low leakage current density (4.710-9 A.cm-2 at 1 V) has been observed for the amorphous ZrO2 thin films. While, HfO2 based MOS gate stack shows reasonably high dielectric constant ( 23) with low leakage current density (1.410-8 A.cm-2 at 1 V). We have investigated the dominating current conduction mechanism and found that the current is mainly governed by space charge limited conduction (SCLC) mechanism for the high bias voltages, while low and intermediate bias voltages show the (Poole – Frenkel) PF and (Fowler – Nordheim) FN tunneling, respectively. For the HfO2 MOS device band alignment is drawn from the UPS and J-V measurements. The band gap and electron affinity of HfO2 films are estimated 5.9 eV and 3 eV, respectively, which gives a reasonable conduction band offset (1.05 eV) with respect to Si. A TMEO film suffers from a large number of intrinsic defects, which are mostly oxygen vacancies. These defects can create deep levels below the conduction band of high- dielectric material, which can act like a hole and electron traps. In addition to that, interface between Si and high- is an additional concern. These defect states in the band gap of high- or at the Si/ high- interface might lead to the threshold voltage shifts, lower carrier mobility in transistor channel, Fermi level pinning and various other reliability issues. Hence, we also studied bulk and interfacial defects present in the high- films on Si and their interface with Si by a very sensitive DLTS technique. The capture cross-sections are measured by insufficient filling DLTS (IF – DLTS). The defects present at the interface are Si dandling bond and defect in the bulk are mostly oxygen vacancies related defects present in various charge states. The interface states (Dit) are in the range of 2×1011 to 9×1011 eV-1cm-2, which are higher than the Al/SiO2/Si MOS devices (Dit in Al/SiO2/Si is the benchmark and in the order of 1010 eV-1cm-2). Still this is an acceptable value for Si/high-k (non-native oxide) MOS devices and consistent with other deposition methods. The capture cross-sections are found to be quite low in the order of 10-18 to 10-19 cm2, which indicate a minor impact on the device operation. The small value of capture cross-sections are attributed to the involvement of tunneling, to and from the bulk traps to the interface. In conclusion, the low cost solution processed high- thin films obtained are of high quality and find their importance as a potential dielectric layer. DLTS study will be helpful to reveal various interesting facts observed in high- such as resistive switching, magnetism and leakage current problems mediated by oxygen vacancy related defects

No description available.

This Ph.D. thesis concentrates on the synthesis and characterization of tailor-made metal-based precursors and their application in the metal-organic chemical vapor deposition (MOCVD), combustion chemical vapor deposition (CCVD) and in the spin-coating process. Therefore, different complexes containing copper, ruthenium, palladium and gold were synthesized and investigated concerning their thermal properties, especially their decomposition behavior and volatility. Copper(II) and palladium(II) β-ketoiminates were synthesized and used in MOCVD or spin-coating deposition experiments for the formation of metal and metal oxide materials. Ruthenium complexes of type Ru(CO)2(PEt3)2(O2CR)2 (R = Me, Et, iPr, tBu, CH2OMe, CF3) were investigated concerning their physical characteristics depending on the different carboxylates. While primarily focusing on the thermal decomposition behavior, VT IR (variable temperature infrared) spectroscopy, TG-MS (thermogravimetry-mass-spectrometry) studies and DFT (density-functional theory) calculations were carried out to gain a deeper inside into the degradation of the respective complexes, whereby it was possible to propose decomposition mechanisms. Furthermore, from these results it was possible to propose decomposition mechanisms. Gold carboxylates of type [AuO2CCH2OMe(PR’3)] (R’ = Et, nBu) were synthesized and characterized for the use as precursors within CCVD processes to generate Au and SiOx:Au materials. The deposits were used as heterogeneous catalyst in the reduction of 4-nitrophenol. The deposition behavior of zinc diolate towards zinc oxide layer formation was studied by MOCVD experiments, whereby an influence on the crystallinity of the received films was observed depending on the deposition conditions. The second part of this dissertation focuses on the synthesis of polyaromatic hydrocarbons (napthalene, phenanthrene and pyrene) functionalized with Fc (Fc = Fe(η5-C5H4)(η5-C5H5)) units as redox-active group. Thereby, the main emphasis was on the investigation of the charge transfer properties between the ferrocenyl entities through the π-conjugated bridges. The charge transfer behavior was affected by the substituents or substitution pattern at the aryls resulting in more or less intense intervalence charge transfer (IVCT) excitations of the respective compounds. In order to explore the interaction between the Fc-functionalized arenes and SWCNTs (single-walled carbon nanotubes), these molecules were studied by single-crystal X-ray diffraction analysis and DFT calculations. Moreover, disentangling experiments of SWCNTs with a Fc-functionalized pyrene led to the formation of a novel nanoconjugation, whereby the electrochemical response of the ferrocenyl entities is still present. / Die vorliegende Arbeit befasst sich mit der Synthese und Charakterisierung von maßgeschneiderten Übergangsmetall-basierten Precursoren und deren Anwendung in der metallorganischen chemischen Gasphasenabscheidung (MOCVD), in der Flammenbeschichtung (CCVD), oder in der Rotationsbeschichtung. Dafür wurden Kupfer-, Ruthenium-, Palladium- und Gold-haltige Komplexe hergestellt und bezüglich ihrer thermischen Eigenschaften, insbesondere das Zersetzungsverhalten und die Flüchtigkeit, charakterisiert. Cu(II)- und Pd(II)-β-Ketoiminate wurden synthetisiert und in der MOCVD oder in der Rotationsbeschichtung genutzt, um metallische und metalloxidische Materialien abzuscheiden. Ruthenium Komplexe des Typs Ru(CO)2(PEt3)2(O2CR)2 (R = Me, Et, iPr, tBu, CH2OMe, CF3) wurden hinsichtlich ihrer physikalischen Eigenschaften in Abhängigkeit der verschiedenen Substituenten der Carboxylate untersucht. Dabei lag der Fokus im Besonderen auf der thermischen Zersetzungen, welche mittels VT IR (variable Temperatur-Infrarot) Spektroskopie, TG-MS (Thermogravimetrie-Massenspektrometrie) Untersuchungen und DFT (Dichtefunktionaltheorie) Berechnungen genauer beleuchtet wurden. Dabei war es anhand der erhaltenen Ergebnisse möglich Zersetzungsmechanismen zu formulieren. Weiterhin wurden Goldcarboxylate der Art [AuO2CCH2OMe(PR’3)] (R’ = Et, nBu) synthetisiert und in der CCVD untersucht, um Au und SiOx:Au Materialien herzustellen, welche im Weiteren als heterogene Katalysatoren für die Reduktion von 4-Nitrophenol genutzt wurden. Das Abscheideverhalten von Zinkdiolaten in der MOCVD zur Erzeugung von dünnen Zinkoxidfilmen wurde beispielsweise in Hinblick des Einflusses auf die Kristallinität der Filme untersucht. Im zweiten Teil der Dissertation wird die Synthese von Fc-funktionalisierten (Fc = Fe(η5-C5H4)(η5-C5H5)) polyaromatischen Kohlenwasserstoffen (Naphthalen, Phenanthren, Pyren) diskutiert. Der Schwerpunkt lag dabei auf der Untersuchung des Elektrontransferverhaltens zwischen den Redox-aktiven Gruppen in Abhängigkeit der Substituenten und des Substitutionsmusters der π-konjugierten Brücke. Diese Verbindungen wurden mittels Röntgeneinkristallstrukturanalyse und DFT-Berechnungen untersucht um festzustellen, ob eine Wechselwirkung zwischen den Fcfunktionalisierten Arenen und SWCNTs (einwandige Kohlenstoffnanoröhren) möglich ist. Entbündelungsversuche von SWCNTs in Anwesenheit eines Fc-funktionalisierten Pyrens lieferten ein neuartiges Hybridsystem, welches Fc-basierte Redoxprozesse zeigte.