The orientation relationship and interfaces of Au5Sn with the Au (001), (110) and (111) surfaces have been studied with transmission electron microscopy. Au was evaporated onto the NaCl (001), (110) and (111) surfaces to form epitaxial Au thin films and Sn was evaporated onto the Au film and heat treated to form Au5Sn. Two types of orientation relationships were found: (1) (2-1-10)Au5Sn/(001)Au¡A(0006)Au5Sn //(-220)Au and (03-30)Au5Sn//(220)Au, which was found on the (2-1-10)Au5Sn/(001)Au interface; and (2) (2-1-10)Au5Sn/(-111)Au¡A(0006)Au5Sn //(-22-4)Au and (03-30)Au5Sn//(220)Au, which was found on the (2-1-10)Au5Sn/(-111)Au interface.The structures of the interfaces were analyzed. The free energy formation of AuSn is much larger than that of Au5Sn.Analysis of above results show that the differences of the interfacial energies between AuSn/Au and Au5Sn/Au may not be a significant. Therefore probably has a lower activation energy of AuSn nucleation and in the first plane to form at the AuSn interface.

No description available.

This thesis investigates lead oxides as photovoltaic materials. Vacuum deposition methods and ex-situ annealing are used to produce different stoichiometries of lead oxide. The relationship between structure and the optoelectronic properties is then investigated. Following this, a number of photovoltaic devices are prototyped and a Kelvin probe used to determine and understand the band structure of devices. Thin films of PbO produced via air annealing of thermally evaporated lead consist of a mixture of two phases, orthorhombic and tetragonal, that determine the materials properties and effectiveness as absorber layer in a Schottky device. Films of higher tetragonal content are more photoactive, showing lower series resistance. Kelvin probe reveals that with an increasing work function of the PbO with increasing duration of the annealing, the Schottky barrier between PbO and Al increases, which results in a higher VOC. This trend is inverted when the Fermi level of PbO drops below that of ITO, creating an opposing junction. Reactively sputtered PbO2 films are highly conductive degenerate semiconductors. Increasing oxygen flow rate during deposition leads to increased resistivity and decreased mobility, resulting from a decrease in grain size. Alongside this an increase in carrier concentration is observed as the material gets less ordered at higher oxygen flow rates, which results in an increase in Fermi level. Due to its high conductivity the material is not photoactive, and the high work function between -5.6 and -5.8 eV does not allow the formation of a Schottky junction or a p-n junction with the evaporated p- type PbO. Post deposition annealing of the sputtered films leads to the formation of the more resistive Pb3O4 phase. This material shows lower carrier concentration and mobility, however, work functions are similarly high. The changes induced by the heat treatment are not substantial enough to be able to create a junction between the as-deposited and the annealed material, as is revealed by Kelvin probe and Hall Effect measurements. Heterojunctions between P3HT and Pb3O4 were made to test predictions made by KP measurements. A heat treatment on P3HT improved its electronic properties and raised the Fermi level, resulting in the transformation of a diode in to a photovoltaic device and a decrease in dark current.

Por ser um semicondutor de elevado número atômico, elevada densidade de massa e largo gap de energia, o brometo de tálio (TlBr) é um material promissor para a detecção da radiação à temperatura ambiente. Entretanto, existem poucos trabalhos relacionados ao estudo deste material sob forma de filme fino policristalino para produção em grandes áreas como desejado para aplicações médicas. Neste trabalho, as técnicas de spray pyrolysis e evaporação térmica foram avaliadas como métodos alternativos para a deposição de filmes de TlBr policristalinos. Ambas as técnicas apresentam relativo baixo custo e podem facilmente ser expandidas para grandes áreas. O objetivos deste trabalho é o estudo da influência das principais condições de crescimento nas propriedades (estruturais, ópticas e elétricas) finais dos filmes de TlBr. Para os filmes produzidos por spray pyrolysis água mili-Q foi utilizada como solvente. A solução (0,10 g de TlBr dissolvidos em 100 g de água) foi agitada à temperatura de 70ºC. Cada deposição foi realizado mantendo os substratos (1cm x 1cm) à temperatura de 100ºC, com um fluxo de nitrogênio (N2) de 8 1/min e um fluxo de solução de aproximadamente 1/90 (ml/s). A distância bico de spray-substrato utilizada foi de 19 cm. Os filmes de TlBr evaporados foram crescidos pela evaporação térmica do material a partir de um cadinho de tungstênio. Um sistema de aquecimento dos substratos foi implantado e permitiu a variação da temperatura destes durante a deposição desde a temperatura ambiente até 200ºC. A separação substrato-superfície de evaporação, h, e o número de deposições por filme, n, também foram variados no intervalo de 3 a 9 cm e 1 a 4, respectivamente. A estrutura dos filmes foi investigada por Difração de Raio-x, a morfologia por Microscopia Eletrônica de Verredura e a composição através da Espectroscopia de Dispersão de Energia (EDS). Experimentos ópticos de transmitância em função do comprimento de ondas foram realizados para estimar o gap ótico dos filmes.As resistividades foram medidas a partir de experimentos de corrente em função da voltagem aplicada fluorescente (20 watts). Por fim, algumas amostras selecionadas foram expostas aos raios-X na faixa de diagnóstico mamográfico. As melhores propriedades foram obtidas para os filmes crescidos por evaporação térmica. A maior compactação e o maior gap óptico foram encontrados para os filmes produzidos a partir de h= 9 cm, os quais garantiram a maior sensibilidade para estes filmes quando expostos aos raios-X. Para os filmes produzidos pela deposição sequencial de várias camadas, a estrutura colunar dos filmes foi mantida para camadas superiores e resultados semelhantes para todas as amostras foram obtidos em relação ao gap óptico e à resistividade elétrica. Além disso, a sensibilidade a partir da utilização de raio-X na faixa mamográfica foi quadruplicada para o filme mais espesso. O aumento da temperatura do substrato resultou na maior compactação e homogeneidade no recobrimento do substrato. Entretanto, uma perda significativa de material durante a evaporação determinou filmes menos espessos em relação aos depósitos à temperatura ambiente. Variações cristalográficas e morfológicas foram obtidas entre os filmes depositados a diferentes temperaturas. Maiores valores gap foram obtidos para 150 e 200ºC. A caracterização elétrica dos filmes depositados a diferentes temperaturas foi limitada, neste trabalho, pela baixa pureza do pó utilizado para produção destes filmes. / Due to its high atomic number, high mass density and intrinsic band gap, thallium bromide (TlBr) is a promising semiconductor for room temperature operation for ionizing radiation detection. However, there are few works related to the study of this material in the polycrystalline thin film form for production in large areas (~ 40 x 40 cm2 ), as desired by medical applications. In this work, spray pyrolysis and thermal evaporation were used as alternative methods for the deposition of polycrystalline TlBr films. Both techniques present relative low cost and can be expanded for large areas. The aim of this work is to investigate the influence of the main growth conditions on the final structural, optical and electrical TlBr films properties. Films produced by spray pyrolysis used mili-Q water as solvent. The solution (0,10g of TlBr dissolved in 100g of water) was stirred at 70o C. Each deposition was performed maintaining the substrates (1cm2 ) at 100o C, the nitrogen rate at 8l/min and the solution flow at 1/90 ml/s approximately. The nozzle-spray to substrate distance was 19 cm. Evaporated TlBr films were grown by resistive thermal evaporation of purified material from a tungsten crucible. The substrate temperature was evaluated from room temperature to 200°C. The separation between evaporation source and substrates, h, and the number of depositions, n, were also varied from 3 cm up to 9 cm and from 1 up to 4, respectively. The structure of the crystals was investigated by X-ray Diffraction, the morphology by Scanning Electron Microscopy and the composition by Energy Dispersive X-Ray Spectroscopy. Optical experiments of absorbance as a function of wavelength were performed to estimate the optical gap of the TlBr films. Electrical resistivities were measured using current versus voltage experiments. The dark current was compared to the current under illumination with a fluorescent lamp (20 watts). Finally, some selected samples were exposed to X-ray in the range of mammography diagnosis. The best properties were obtained for films produced by resistive thermal evaporation. This technique allowed the production of films with thickness of approximately 28 µm, for a unique deposition of 12 minutes. However, bromine has lower vapor pressure than the thallium, what leads to a Br loss of about 10% in the composition of evaporated films. The smallest distribution of cracks and the largest optical gap were obtained for films produced at the lowest deposition rates. This leads also to a higher increase of the ratio between current under irradiation and in the dark, when the films were exposed to X-rays. For films produced at room temperature using sequential depositions, the columnar structure was kept for the superior layers and similar results for all samples were obtained in relation to optical gap and electrical resistivity. Moreover, for the thicker film, an increase of a factor 4 was observed for the ratio between current under irradiation using X-rays in the mammography range in relation to the dark. The higher substrate temperature leads to significant material loss during the evaporation and determined less thick films in relation to the ones deposited at room temperature. Structural and morphological variations were verified for films deposited at different temperatures. Larger gap values were found for 150 and 200ºC. For the electrical characterization of the films deposited at different temperatures an original powder with higher purity would be necessary. Moreover, due to the significant difference between bromine and thallium vapor pressures, better results would probably be obtained by a change to the hot-wall evaporation technique.

Após setenta anos de sua descoberta, o vírus da zika surgiu no Brasil, espalhou-se rapidamente pelas Américas e trouxe complicações incomuns em doenças causadas por Flavivirus, como a microcefalia. A Organização Mundial da Saúde classifica a zika como a doença viral mais preocupante da atualidade e considera urgente desenvolver novos métodos de diagnóstico para ela e doenças correlatas como a dengue. Embora existam exames para identificar infecções pelos vírus dessas duas doenças, ainda não há um método rápido, específico e de baixo custo para o diagnóstico precoce. Visando preencher essa lacuna, este trabalho teve como objetivo construir dois tipos de biossensores eletroquímicos de DNA para detecção label-free desses dois vírus. Foram fabricados eletrodos descartáveis em substrato de politereftalato de etileno metalizado com filme fino de ouro nas configurações com um e três contatos. As sequências genéticas de iniciadores e sondas de captura foram desenhadas especialmente para este trabalho com base na análise dos genomas dos vírus. O primeiro biossensor utilizou o eletrodo em uma célula eletroquímica e foi capaz de identificar sequências de DNA da zika ou da dengue. As análises por espectroscopia de impedância eletroquímica mostraram que o biossensor é seletivo à sequência alvo com limite de detecção de (9,86 ± 0,89) nmol L-1. O segundo biossensor utilizou um eletrodo de três contatos para identificação de sequências de DNA em uma gota da amostra. No contato central, usado como eletrodo de trabalho, foi imobilizada a sequência de captura e os contatos laterais funcionaram como eletrodos de referência e auxiliar. Nesse sistema as medidas de impedância indicaram limite de detecção de (25,0 ± 1,7) nmol L-1. Os biossensores desenvolvidos mostraram seletividade para identificar o material genético dos vírus da zika e da dengue nos ensaios com DNA sintético e, portanto, são promissores para a análise de amostras reais, principalmente de produtos da polimerase da cadeia reversa. / After seventy years of its discovery, zika virus has emerged in Brazil, spread rapidly throughout the Americas, bringing unusual complications in diseases caused by flaviviruses, such as microcephaly. The World Health Organization classifies zika as the most harmful viral disease today and considers urgent the development of new diagnostic methods for zika and related diseases, such as dengue. Although there are tests to identify both infections, no current diagnostic method is rapid, specific and cost-efective. This thesis describes two types of electrochemical DNA biosensors for label-free detection of these zika and dengue. Disposable electrodes were fabricated on polyethylene terephthalate substrates covered with a nanometric gold layer by thermal evaporation, manufactured in one- and three-contact configurations. Genetic sequences of primers and complementary capture probes were designed based on the analysis of the virus genomes. The first biosensor we developed used the new electrode in an electrochemical cell and was able to identify zika or dengue DNA sequences. Analyses by electrochemical impedance spectroscopy showed that these biosensors are selective for zika or dengue with a detection limit of (9.86 ± 0.89) nmol L-1. A second type of biosensor used a three-contact electrode to identify DNA sequences in a drop of sample. In the central contact, used as a working electrode, the capture sequence was immobilized and the lateral contacts acted as reference and auxiliary electrodes. In this system the impedance measurements indicated a limit of detection of (25.0 ± 1.7) nmol L-1. The developed biosensors showed selectivity for zika and dengue in the synthetic DNA assays, and therefore are promising for the analysis of real samples, especially the polymerase chain reaction amplicon.

Magnesium (Mg) thin films with various thicknesses ranging from 50 to 1000 nm capped with nominally 20 nm Palladium (Pd) were prepared by a thermal evaporation unit. A total of 25 glass substrates were used in each experiment. The unit had a rotatable macro shutter, rectangular in shape, rotation axes opposite to the Mg source, which allowed controlled exposure of the substrates. Thin films of 50, 100, 150, 200, 300, 400, 500, 600, 800 nm and 1000 nm were produced in a single experiment. Hydrogenation and dehydrogenation of the films were examined using a gas loading chamber which allowed in-situ resistance measurement. Samples were hydrogenated isochronally up to 453 K with a heating rate of 1.5 K/min. Samples cooled to room temperature were subjected to dehydrogenation test. The chamber was taken under vacuum (~10-2 mbar) and the sample was heated up to 453 K at a rate of 1.5 K/min. The results showed that the hydrogenation and dehydrogenation temperatures correlate with the film thickness, thinner films reacting with hydrogen at low temperatures. While 200 nm thin film hydrogenated at 420 K and desorbed it at 423 K, 50 nm thin film hydrogenated at room temperature and desorbed it at 405 K. Thicker films needed higher temperatures to react with hydrogen. It is concluded that films thinner than 200 nm react fully with hydrogen / while a considerable portion of the thicker films remain unreacted. Significance of this is discussed with reference to the design of hydrogen storage systems based on thin films or nanoparticles.

In this study, InSe and CdS thin films were deposited by thermal evaporation method onto glass substrates. Schottky and heterojunction devices were fabricated by deposition of InSe and CdS thin films onto SnO2 coated glass substrates with various top metal contacts such as Ag, Au, In, Al and C. The structural, electrical and optical properties of the films were investigated prior to characterization of the fabricated devices. The structural properties of the deposited InSe and CdS thin films were examined through SEM and EDXA analysis. XRD and electrical measurements have indicated that undoped InSe thin films deposited on cold substrates were amorphous with p-type conductivity lying in the range of 10-4-10-5 (&amp / #61527 / .cm)-1 at room temperature. Cd doping and post-depositional annealing effect on the samples were investigated and it was observed that annealing at 100 oC did not show any significant effect on the film properties, whereas the conductivity of the samples increased as the Cd content increases. Temperature dependent I-V and Hall effect measurements have shown that conductivity and carrier concentration increases with increasing absolute temperature while mobility is almost temperature independent in the studied temperature range of 100-430 K. The structural and electrical analysis on the as-grown CdS thin films have shown that the films were polycrystalline with n-type conductivity. Temperature dependent conductivity and Hall effect measurements have indicated that conductivity, mobility and carrier concentrations increases with increasing temperature. Transmission measurements on the as-grown InSe and CdS films revealed optical band gaps around 1.74 and 2.36 eV, respectively. Schottky diode structures in the form of TO/p-InSe/Metal were fabricated with a contact area of around 8x10-3 cm2 and characterized. The best rectifying devices obtained with Ag contacts while diodes with Au contacts have shown slight rectification. The ideality factor and barrier height of the best rectifying structure were determined to be 2.0 and 0.7 eV, respectively. Illuminated I-V measurements revealed open-circuit voltages around 300 mV with short circuit current 3.2x10-7 A. High series resistance effect was observed for the structure which was found to be around 588 &amp / #61527 / . Validity of SCLC mechanism for Schottky structures was also investigated and it was found that the mechanism was related with the bulk of InSe itself. Heterostructures were obtained in the form of TO/n-CdS/p-InSe/Metal and the devices with Au and C contacts have shown the best photovoltaic response with open circuit voltage around 400 mV and short circuit current 4.9x10-8 A. The ideality factor of the cells was found to be around 2.5. High series resistance effect was also observed for the heterojunction devices and the fill factors were determined to be around 0.4 which explains low efficiencies observed for the devices.

Este trabalho versou sobre a obtenção de partículas nanoestruturadas de ZnO pela técnica de evaporação térmica a partir de zinco metálico. Basicamente, a síntese ocorria em um reator de quatzo colocado em um forno tipo mufla, onde o zinco metálico reagia com uma atmosfera oxidante, proporcionada pela injeção de ar comprimido. Inicialmente, o forno era aquecido a temperaturas que variaram de 850 a 1050°C. Posteriormente, a amostra de zinco metálico era inserida na zona de aquecimento no interior do tubo, em quantidade de 2,5g, 5g, 10g, 20g e 30g. A injeção de argônio (99,99% de pureza), para o transporte das partículas de ZnO para fora da zona de reação, ocorria com um fluxo de 1 a 5L/min. O tempo de reação foi controlado e as regiões de ocorrência das reações variadas. Após o término das reações, o forno era resfriado à temperatura ambiente para a realização da coleta das amostras. A pressão utilizada durante as reação foi a pressão atmosférica. O material produzido foi analisado para a caracterização da estrutura cristalina (por difração de raios-x), morfologia (por microscopia eletrônica de varredura e transmissão, com auxílio do software Image Tool para a estimativa de tamanho de partícula) e área superficial (método BET). O band gap do ZnO foi determinado por análise de transmitância, refletância e absorbância, utilizando um espectrofotômetro com acessório de refletância difusa, através de medidas de refletividade de infravermelho difuso no pó óxido de zinco. Os dados de absorção foram calculados em função de Kubelka-Munk. A atividade fotocatalítica foi avaliada através do processo de degradação de uma solução de alaranjado de metila em um reator fotoquímico de iluminação UVA, com sua descoloração sendo observada através da espectroscopia UV-Vis. As partículas nanoestruturadas de ZnO produzidas tiveram suas características influenciadas pelos parâmetros de síntese. A morfologia variou desde formas aciculares a tetrápodes. As dimensões variaram de 1130nm a 17nm, conforme a dimensão (comprimento, largura) considerada. A avaliação da atividade fotocatalítica indicou um comportamento bastante similar ao ZnO comercial utilizado como padrão, o que pode ser explicado pela área superficial e valores de band gap. No entanto, não foi possível encontrar a mesma correlação em outros resultados, sendo então suposto uma fotocorrosão, como fenômeno de degradação da atividade fotocatalítica de ZnO, a exemplo do relatado na literatura por outros autores. / This work investigates nanostructured ZnO particles obtained by the technique of thermal evaporation from zinc metal. Basically, the synthesis occurred in a quartz reactor placed in a muffle furnace, where the zinc metal reacted with an oxidizing atmosphere, provided by the injection of compressed air. Initially, the furnace was heated to temperatures varying from 850 to 1050 º C. Subsequently, the sample of zinc metal was inserted into the heating zone inside the tube, in an amount of 2.5 g, 5g, 10g, 20g and 30g. The injection of argon (99,99% purity) for the transport of ZnO particles out of the reaction zone, occurred with a flow of 1 to 5 L/min. The reaction time was controlled and the regions of occurrence of the reactions varied. Upon completion of the reaction, the furnace was cooled to room temperature to perform the sample collection. The pressure used during the reaction was the atmospheric pressure. The material produced was analyzed to characterize the crystal structure (by x-ray diffraction), morphology (by scanning electron microscopy and transmission, with the help of the software Image Tool for estimation of particle size) and surface area (method BET). The band gap of ZnO was determined by transmittance, reflectance and absorbance analysis using a spectrophotometer with diffuse reflectance accessory, by reflectivity measurements of infrared diffuse in the zinc oxide powder. The absorption data were calculated according to Kubelka-Munk. The photocatalytic activity was evaluated through the degradation process of a solution of methyl orange in a photochemical reactor of UVA light, with its discoloration observed by UV-Visible spectroscopy. The particles of ZnO nanostructured produced had characteristics influenced by the parameters of synthesis. The morphology varied from needle-like forms to tetrapods. The size varied from 1130 nm to 17 nm, depending on the dimension (length, width) considered. The evaluation of photocatalytic activity showed a pattern quite similar to commercial ZnO used as standard, which can be explained by surface area and band gap values. However, we could not find the same correlation in other results, and then assumed a photocorrosion, as a phenomenon of degradation of the photocatalytic activity of ZnO, like the reported in the literature by other authors.

Este trabalho versou sobre a obtenção de partículas nanoestruturadas de ZnO pela técnica de evaporação térmica a partir de zinco metálico. Basicamente, a síntese ocorria em um reator de quatzo colocado em um forno tipo mufla, onde o zinco metálico reagia com uma atmosfera oxidante, proporcionada pela injeção de ar comprimido. Inicialmente, o forno era aquecido a temperaturas que variaram de 850 a 1050°C. Posteriormente, a amostra de zinco metálico era inserida na zona de aquecimento no interior do tubo, em quantidade de 2,5g, 5g, 10g, 20g e 30g. A injeção de argônio (99,99% de pureza), para o transporte das partículas de ZnO para fora da zona de reação, ocorria com um fluxo de 1 a 5L/min. O tempo de reação foi controlado e as regiões de ocorrência das reações variadas. Após o término das reações, o forno era resfriado à temperatura ambiente para a realização da coleta das amostras. A pressão utilizada durante as reação foi a pressão atmosférica. O material produzido foi analisado para a caracterização da estrutura cristalina (por difração de raios-x), morfologia (por microscopia eletrônica de varredura e transmissão, com auxílio do software Image Tool para a estimativa de tamanho de partícula) e área superficial (método BET). O band gap do ZnO foi determinado por análise de transmitância, refletância e absorbância, utilizando um espectrofotômetro com acessório de refletância difusa, através de medidas de refletividade de infravermelho difuso no pó óxido de zinco. Os dados de absorção foram calculados em função de Kubelka-Munk. A atividade fotocatalítica foi avaliada através do processo de degradação de uma solução de alaranjado de metila em um reator fotoquímico de iluminação UVA, com sua descoloração sendo observada através da espectroscopia UV-Vis. As partículas nanoestruturadas de ZnO produzidas tiveram suas características influenciadas pelos parâmetros de síntese. A morfologia variou desde formas aciculares a tetrápodes. As dimensões variaram de 1130nm a 17nm, conforme a dimensão (comprimento, largura) considerada. A avaliação da atividade fotocatalítica indicou um comportamento bastante similar ao ZnO comercial utilizado como padrão, o que pode ser explicado pela área superficial e valores de band gap. No entanto, não foi possível encontrar a mesma correlação em outros resultados, sendo então suposto uma fotocorrosão, como fenômeno de degradação da atividade fotocatalítica de ZnO, a exemplo do relatado na literatura por outros autores. / This work investigates nanostructured ZnO particles obtained by the technique of thermal evaporation from zinc metal. Basically, the synthesis occurred in a quartz reactor placed in a muffle furnace, where the zinc metal reacted with an oxidizing atmosphere, provided by the injection of compressed air. Initially, the furnace was heated to temperatures varying from 850 to 1050 º C. Subsequently, the sample of zinc metal was inserted into the heating zone inside the tube, in an amount of 2.5 g, 5g, 10g, 20g and 30g. The injection of argon (99,99% purity) for the transport of ZnO particles out of the reaction zone, occurred with a flow of 1 to 5 L/min. The reaction time was controlled and the regions of occurrence of the reactions varied. Upon completion of the reaction, the furnace was cooled to room temperature to perform the sample collection. The pressure used during the reaction was the atmospheric pressure. The material produced was analyzed to characterize the crystal structure (by x-ray diffraction), morphology (by scanning electron microscopy and transmission, with the help of the software Image Tool for estimation of particle size) and surface area (method BET). The band gap of ZnO was determined by transmittance, reflectance and absorbance analysis using a spectrophotometer with diffuse reflectance accessory, by reflectivity measurements of infrared diffuse in the zinc oxide powder. The absorption data were calculated according to Kubelka-Munk. The photocatalytic activity was evaluated through the degradation process of a solution of methyl orange in a photochemical reactor of UVA light, with its discoloration observed by UV-Visible spectroscopy. The particles of ZnO nanostructured produced had characteristics influenced by the parameters of synthesis. The morphology varied from needle-like forms to tetrapods. The size varied from 1130 nm to 17 nm, depending on the dimension (length, width) considered. The evaluation of photocatalytic activity showed a pattern quite similar to commercial ZnO used as standard, which can be explained by surface area and band gap values. However, we could not find the same correlation in other results, and then assumed a photocorrosion, as a phenomenon of degradation of the photocatalytic activity of ZnO, like the reported in the literature by other authors.

Após setenta anos de sua descoberta, o vírus da zika surgiu no Brasil, espalhou-se rapidamente pelas Américas e trouxe complicações incomuns em doenças causadas por Flavivirus, como a microcefalia. A Organização Mundial da Saúde classifica a zika como a doença viral mais preocupante da atualidade e considera urgente desenvolver novos métodos de diagnóstico para ela e doenças correlatas como a dengue. Embora existam exames para identificar infecções pelos vírus dessas duas doenças, ainda não há um método rápido, específico e de baixo custo para o diagnóstico precoce. Visando preencher essa lacuna, este trabalho teve como objetivo construir dois tipos de biossensores eletroquímicos de DNA para detecção label-free desses dois vírus. Foram fabricados eletrodos descartáveis em substrato de politereftalato de etileno metalizado com filme fino de ouro nas configurações com um e três contatos. As sequências genéticas de iniciadores e sondas de captura foram desenhadas especialmente para este trabalho com base na análise dos genomas dos vírus. O primeiro biossensor utilizou o eletrodo em uma célula eletroquímica e foi capaz de identificar sequências de DNA da zika ou da dengue. As análises por espectroscopia de impedância eletroquímica mostraram que o biossensor é seletivo à sequência alvo com limite de detecção de (9,86 ± 0,89) nmol L-1. O segundo biossensor utilizou um eletrodo de três contatos para identificação de sequências de DNA em uma gota da amostra. No contato central, usado como eletrodo de trabalho, foi imobilizada a sequência de captura e os contatos laterais funcionaram como eletrodos de referência e auxiliar. Nesse sistema as medidas de impedância indicaram limite de detecção de (25,0 ± 1,7) nmol L-1. Os biossensores desenvolvidos mostraram seletividade para identificar o material genético dos vírus da zika e da dengue nos ensaios com DNA sintético e, portanto, são promissores para a análise de amostras reais, principalmente de produtos da polimerase da cadeia reversa. / After seventy years of its discovery, zika virus has emerged in Brazil, spread rapidly throughout the Americas, bringing unusual complications in diseases caused by flaviviruses, such as microcephaly. The World Health Organization classifies zika as the most harmful viral disease today and considers urgent the development of new diagnostic methods for zika and related diseases, such as dengue. Although there are tests to identify both infections, no current diagnostic method is rapid, specific and cost-efective. This thesis describes two types of electrochemical DNA biosensors for label-free detection of these zika and dengue. Disposable electrodes were fabricated on polyethylene terephthalate substrates covered with a nanometric gold layer by thermal evaporation, manufactured in one- and three-contact configurations. Genetic sequences of primers and complementary capture probes were designed based on the analysis of the virus genomes. The first biosensor we developed used the new electrode in an electrochemical cell and was able to identify zika or dengue DNA sequences. Analyses by electrochemical impedance spectroscopy showed that these biosensors are selective for zika or dengue with a detection limit of (9.86 ± 0.89) nmol L-1. A second type of biosensor used a three-contact electrode to identify DNA sequences in a drop of sample. In the central contact, used as a working electrode, the capture sequence was immobilized and the lateral contacts acted as reference and auxiliary electrodes. In this system the impedance measurements indicated a limit of detection of (25.0 ± 1.7) nmol L-1. The developed biosensors showed selectivity for zika and dengue in the synthetic DNA assays, and therefore are promising for the analysis of real samples, especially the polymerase chain reaction amplicon.