RÉSUMÉ : Le but de cette thèse est d’étudier en ab initio l’influence des solutés hydrogène ou oxygène sur les défauts étendus dans le titane alpha. Les résultats sont divisés en trois parties. Dans la première partie le site interstitiel octaédrique du Ti-alpha est trouvé être le site énergétiquement le plus favorable pour un H ou un O. Les calculs avec différentes concentrations en H ou O montrent que la présence d’H augmente le volume tandis que O a un effet inverse. La présence d’H en soluté diminue légèrement les constantes élastiques, la présence d’O a un effet opposé. Deux nouvelles SF sont trouvées dans la deuxième partie : une faute 0,57·(c+a) dans le plan π2 et 0,215·[1-102] dans le plan π1. La deuxième est reliée à la faible énergie de formation de la macle {10-11}. Un mécanisme de dissociation triple du cœur de la dislocation vis c+a est proposé. Mais cette dissociation ne semble pas se produire spontanément à partir d'un cœur de dislocation initialement parfait. Puisque la ségrégation à la faute signifie une diminution de l’énergie de faute, nous déduisons de nos calculs de ségrégation que la présence d'O rend sans doute la formation des SF énergétiquement plus difficile, contrairement au cas d’H. H ségrége fortement au cœur d’une dislocation vis a, avec une énergie variant de 0,06 à 0,30 eV, tandis que O y segrége très difficilement. Positionnés dans les sites les plus internes du cœur d’une dissociation prismatique métastable, en glissement, H et O induisent une dissociation dans le plan π1 ou vers une configuration prisme-π1 mélangée. Les barrières d'énergie de Peierls mesurées avec H et O dans différents sites et avec différentes concentrations montrent que H rend le glissement de la dislocation plus difficile, augmentant ainsi sans doute la cission critique résolue dans le plan prismatique, ce qui est en accord avec les mesures expérimentales. Mais les effets de H ne sont pas assez grands pour induire un glissement dévié vers le plan π1 et la dislocation continuera à glisser dans un même plan prismatique. Avec un O, la barrière d'énergie de Peierls est extrêmement élevée, beaucoup plus que celle pour un glissement dans le plan π1 ou un glissement dans le plan prismatique le plus proche. Du glissement dévié devrait ainsi être induit. Finalement, trois méthodes différentes de déformations de macles sont utilisées. Les stabilités structurale des joints de macles dépendent de leurs caractères structuraux intrinsèques mais aussi des modes de déformation appliqués. La macle la plus observée, {10-12}, et la macle {11-22} ne résistent pas à une déformation de plus de 1% ou 2% selon l’axe c. La présence de H ou O ségrégés améliorent la stabilité des macles {10-12} et {11-22}. Un modèle de dipôle de dislocations de mâclage (TD) est proposé pour permettre de simuler une TD dans une super-cellule de petite taille. Pour {10-12} et sa TD, les énergies de ségrégation de H et O mesurées au niveau du joint permettent de valider ce modèle. H et O peuvent se distribuer de manière plus ou moins homogène au joint et niveau de la TD mais pas dans les sites interstitiels de la couche atomique liée à la TD. / ABSTRACT: The aim of this thesis is to study the influence of hydrogen or oxygen solutes on extended defects in alpha titanium by ab initio calculation. Results are divided into three parts. In a first part the octahedral interstitial site of alpha-Ti is found energetically more favorable for a H or an O atom. The presence of H increases the volume while O has the opposite effect. The presence of H slightly decreases the elastic constants of alpha-Ti while O has an opposite effect. In a second part two new SFs are found: 0.57·(c+a) on π2 and 0.215·[1-102] on π1 plane. The second one is related to the low formation energy of the {10-11} twin boundary. A c+a screw dislocation 3-part dissociation mechanism is proposed. However the c+a screw core tends to spread differently according to the initial core position and a complete 3-part dissociation is not found, which may mean that such a dissociation is not easily obtainable from an initially perfect dislocation core. As segregation to SF means a decrease of the SF energy, the presence of O may make the SF formation energetically more difficult, contrary to H case. H strongly segregates to the a screw dislocation core region with segregation energies varing from 0.06 to 0.3 eV while O hardly segregates to it. Both H and O in core sites change the meta-stable gliding prismatic dissociation to π1 plane or a prism-π1 plane mixed configuration. According to our measurements of Peierls energy barriers with H or O in different sites and concentrations, H makes the gliding more difficult, thus increasing the CRSS in prismatic plane, in agreement with experimental measurements. The effect of H is not big enough to induce a cross-slip of the gliding a-screw dislocation to the π1 plane and that screw will prefer to keep on gliding in its same prismatic plane. The Peierls energy barrier is extremely increased when an O is present in the core position, much higher than the barrier for π1 plane glide or a glide in the nearest prismatic plane. A cross-slip could happen in this case. In the last part, three different deformations are applied to TBs. Their structural stabilities depend not only on their intrinsic characters at the atomistic level but also on the deformation mode applied. {10-12}, {11-22} TB structures fail for deformations as low as 1% or 2% along the c-axis. The {11-21} and the {10-11} TBs are much more resistant. The presence of segregated H and O enhances the {10-12} and {11-22} TB limited stability. A twinning disconnection dipole model is proposed which allows the simulation of a TD in a size limited supercell. Segregation energy calculations with the {10-12} TB and its TD validate the model at the TB level and show that H and O should distribute more or less homogeneously to the TD core and the TB, with only a slight preference to the TD core although not at the interstitial sites of the atomic layer related to the disconnection step itself.

Disertační práce se zabývá studiem defektů v monokrystalech Czochralskiho křemíku legovaných bórem. Práce studuje vznik kruhových obrazců vrstevných chyb pozorovaných na povrchu křemíkových desek po oxidaci. Hlavním cílem práce je objasnit mechanismy vzniku pozorovaného rozložení vrstevných chyb na studovaných deskách a vyvinout metody pro řízení tohoto jevu. Na základě experimentálních analýz a rozborů obecných mechanismů vzniku defektů jsou objasňovány vazby mezi vznikem defektů různého typu. Tyto jsou pak diskutovány v souvislosti s parametry krystalu i procesu jeho růstu. Takto sestavený model je využit pro vývoj procesu růstu krystalů, kterým je potlačen nadměrný vznik defektů ve studovaných deskách. Za účelem studia defektů jsou zaváděny a vyvíjeny nové analytické metody. Disertační práce byla vytvořena za podpory ON Semiconductor Czech Republic, Rožnov pod Radhoštěm.

<p>Metallic materials with nanotwins have been extensively studied for the past twenty years due to their excellent mechanical properties including high strength, great ductility and good thermal stability. Twin boundaries (TBs) can inhibit dislocation migration to increase strength and renucleate new dislocations to accommodate plasticity. However, the roles of stacking faults (SFs), another important planar defect, on the deformation mechanisms in face-centered cubic (FCC) and hexagonal close-packed (HCP) metals are less well understood. The focus of this research is to identify the effect of SFs on deformation mechanisms in FCC and HCP Co thin films and investigate the collaborated strengthening effect between SFs, TBs and layer interfaces in Cu/Co multilayer systems. We utilized in situ micropillar compression tests to investigate the mechanical behaviors of FCC Co with inclined SFs, HCP Co with parallel SFs and Cu/Co multilayers with defect networks, which consisting of SFs, TBs and layer interfaces. Post deformation transmission electron microscopy analyses and molecular dynamic simulations revealed that SFs can strengthen the materials by impeding partial dislocation migration and accommodate plastic deformation by defaulting process and/or intriguing phase transformation. Furthermore, the interplay between TBs, SFs and layer interfaces provides high strength and good deformability in Cu/Co nanolaminates. This research shows an in-depth investigation on deformation mechanisms of nanostructured metals with high-density SFs and provides a new perspective for the design of metallic materials with high strength and great ductility.</p>

Afin de mieux comprendre les évolutions structurales mises en évidence dans les oxydes lamellaires de formule générale Li1+x(Ni0.425Mn0.425Co0.15)O2 utilisés comme électrode positive pour batterie lithium-ion, la structure du composé Li2MnO3 a été étudiée en détail. Obtenu selon différentes voies de synthèses, réalisées à différentes températures, ce matériau qui peut être considéré comme un matériau model à fait l’objet d’une étude cristallographique où l’utilisation de la microscopie électronique a été privilégiée. Deux types de défauts ont été identifiés. D’une part, l’existence de fautes d’empilement au sein du matériau a été démontrée. Leurs conséquences sur les clichés de diffraction électronique et les diagrammes de diffraction des rayons-X ont étés expliquées permettant d’unifier les controverses présentent à ce sujet dans la littérature. D’autre part, l’étude de la stabilité thermique du composé Li2MnO3 a mis en évidence l’apparition de défauts de type « phase spinelle » en surface des grains lorsque la température de traitement thermique devient supérieure ou égale à 900°C. Le traitement du matériau par la voie acide a pu être étudié et le mécanisme de désintercalation chimique du lithium par la voie acide a finalement pu être précisé. Il est montré que ce mécanisme est le même quelle que soit la taille des particules. / In order to get a better understanding of the complex structural evolutions occurring in the layered oxides like Li1+x(Ni0.425Mn0.425Co0.15)O2 materials when they are used as positive electrodes in lithium batteries, the structure of Li2MnO3 has been studied in detail. Obtained from several synthesis ways, annealed at various temperatures, this compound that can be considered as a model one regarding these complex materials has been the object of a crystallographic study where the use of electron microscopy was privileged. Two kinds of defects could be identified. From one part, the existence of stacking faults in the Li2MnO3 material has been proved and they have been visualized for the first time. Their consequences on X ray and electron diffraction patterns are explained allowing the unification of discrepancies existing in the bibliography. For other part, the study of the thermal stability of Li2MnO3 evidenced the appearance of spinel type defects when the annealing treatment is performed above 900°C. Finally the delithiation by acid leaching is studied and the lithium extraction mechanism is clarified. It is shown that this mechanism is the same whatever the particle size is.

Thesis (Ph.D.); Submitted to The University of California at Berkeley, Berkeley, CA (US); 1 Sep 2003. / Published through the Information Bridge: DOE Scientific and Technical Information. "LBNL--55022" Prilliman, Gerald Stephen. USDOE Director. Office of Science. Office of Basic Energy Sciences (US) 09/01/2003. Report is also available in paper and microfiche from NTIS.

Real structure of heteroepitaxial GaN and AlGaN layers is studied by diffuse x-ray scattering. A new developed method based on Monte Carlo simulation enabling to determine densities of threading dislocations in c-plane GaN and stacking faults in a-plane GaN is presented. The results of Monte Carlo simulations are compared with ones obtained by use of other conventional techniques. The advantages and limitations of the new method are discussed in detail. The methods accuracy is estimated as about 15%. We have shown that our method is a reliable tool for threading dislocations and stacking faults densities determination.

III-nitridy běžně krystalizují v hexagonální (wurtzitové) struktuře, zatímco kubická (sfaleritová) struktura je metastabilní a má pouze mírně vyšší energii. Jejich fyzikální vlastnosti jsou silně ovlivněny přítomností rozsáhlých defektů, které jsou v těchto dvou strukturách od sebe odlišné. U wurtzitových nitridů se jedná primárně o vláknové dislokace. Některé vláknové dislokace tvoří hluboké energetické stavy v zakázaném pásu, kterými ovlivňují elektrické a optoelektronické vlastnosti těchto materiálů. Oproti tomu, kubické nitridy obsahují množství vrstevných chyb, které představují lokální transformace do stabilnější wurtzitové struktury. Cílem této práce je charakterizovat rozsáhlé defekty v obou krystalových strukturách pomocí elektronové mikroskopie, mikroskopie atomárních sil a rentgenové difrakce. Prokázali jsme, že vzorky GaN/AlN a AlN s orientací (0001) rostlé na substrátu Si (111) pomocí epitaxe z organokovových sloučenin obsahují velkou hustotu vláknových dislokací. Nejčastější jsou dislokace s Burgersovým vektorem s komponentou ve směru a wurtzitové struktury, následované dislokacemi s Burgersovým vektorem s komponentou ve směru a+c, zatímco dislokace s Burgersovým vektorem s c komponentou jsou relativně vzácné. Pravděpodobný původ vláknových dislokací je diskutován v souvislosti s různými mechanismy růstu těchto vrstev. Prizmatické vrstevné chyby byly nalezeny v tenkých nukleačních vrstvách AlN, ale v tlustších vrstvách již nebyly přítomny. Na rozhraní AlN / Si byla nalezena amorfní vrstva složená ze SiNx a částečně taky z AlN. Navrhujeme, že by tato amorfní vrstva mohla hrát významnou roli při relaxaci misfitového napětí. Analýza elektrické aktivity rozsáhlých defektů v AlN byla provedena pomocí měření proudu indukovaného elektronovým svazkem. Zjistili jsme, že vláknové dislokace způsobují slabý pokles indukovaného proudu. Díky jejich vysoké hustotě a rovnoměrnému rozložení však mají větší vliv na elektrické vlastnosti, než mají V-defekty a jejich shluky. Topografické a krystalografické defekty byly studovány na nežíhaných a žíhaných nukleačních vrstvách kubického GaN deponovaných na 3C-SiC (001) / Si (001) substrátu. Velikost ostrůvků na nežíhaných vzorcích se zvyšuje s tloušťkou nukleační vrstvy a po žíhání se dále zvětšuje. Po žíhání se snižuje pokrytí substrátu u nejtenčích nukleačních vrstev v důsledku difúze a desorpce (nebo leptání atmosférou reaktoru). Vrstevné chyby nalezené ve vrstvách GaN, poblíž rozhraní se SiC, byly většinou identifikovány jako intrinsické a byly ohraničené Shockleyho parciálními dislokacemi. Jejich původ byl diskutován, jako i vliv parciálních dislokací na relaxaci misfitového napětí. Díky velkému množství vrstevných chyb byly podrobněji studovány jejich interakce. Na základě našich zjištění jsme vyvinuli teoretický model popisující anihilaci vrstevných chyb v kubických vrstvách GaN. Tento model dokáže předpovědět pokles hustoty vrstevných chyb se zvyšující se tloušťkou vrstvy.

The thesis deals with the study and analysis of crystallographic defects on the surface of silicon wafers produced by Czochralski method. It focuses primarily on growth defects and oxygen precipitates, which play an important role in the development of appropriate nucleation centers for growth of stacking faults. The growth of stacking faults near the surface of silicon wafers is supported by their oxidation and selective etching. Such a highlighted stacking faults are known as the OISF (Oxidation Induced Stacking Fault). Spatial distribution of OISF on the wafer gives feedback to the process of pulling silicon single crystal and wafers surface quality. Moreover the work describes the device for automatic detection and analysis of OISF, which was developed for ON Semiconductor company in Rožnov Radhoštěm.

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1-100)-oriented (m-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology. One of the obstacles impeding the development of this technology is the lack of suitable substrates for high quality materials having semi-polar and nonpolar orientations. Even though the growth of free-standing GaN substrates (homoepitaxy) could produce material of reasonable quality, the native nonpolar and semi-polar substrates are very expensive and small in size. On the other hand, GaN growth of semi-polar and nonpolar orientations on inexpensive, large-size foreign substrates (heteroepitaxy), including silicon (Si) and sapphire (Al2O3), usually leads to high density of extended defects (dislocations and stacking faults). Therefore, it is imperative to explore approaches that allow the reduction of defect density in the semi-polar GaN layers grown on foreign substrates. In the presented work, I develop a cost-effective preparation technique of high performance light emitting structures (GaN-on-Si, and GaN-on-Sapphire technologies). Based on theoretical calculations predicting the maximum indium incorporation efficiency at θ ~ 62º (θ being the tilt angle of the orientation with respect to c-plane), I investigate (11-22) and (1-101) semi-polar orientations featured by θ = 58º and θ = 62º, respectively, as promising candidates for green emitters. The (11-22)-oriented GaN layers are grown on planar m-plane sapphire, while the semi-polar (1-101) GaN are grown on patterned Si (001). The in-situ epitaxial lateral overgrowth techniques using SiNx nanoporous interlayers are utilized to improve the crystal quality of the layers. The data indicates the improvement of photoluminescence intensity by a factor of 5, as well as the improvement carrier lifetime by up to 85% by employing the in-situ ELO technique. The electronic and optoelectronic properties of these nonpolar and semi-polar planes include excitonic recombination dynamics, optical anisotropy, exciton localization, indium incorporation efficiency, defect-related optical activities, and some challenges associated with these new technologies are discussed. A polarized emission from GaN quantum wells (with a degree of polarization close to 58%) with low non-radiative components is demonstrated for semi-polar (1-101) structure grown on patterned Si (001). We also demonstrated that indium incorporation efficiency is around 20% higher for the semi-polar (11-22) InGaN quantum wells compared to its c-plane counterpart. The spatially resolved cathodoluminescence spectroscopy demonstrates the uniform distribution of indium in the growth plane. The uniformity of indium is also supported by the relatively low exciton localization energy of Eloc = 7meV at 15 K for these semi-polar (11-22) InGaN quantum wells compared to several other literature reports on c-plane. The excitons are observed to undergo radiative recombination in the quantum wells in basal-plane stacking faults at room temperature. The wurtzite/zincblende electronic band-alignment of BSFs is proven to be of type II using the time-resolved differential transmission (TRDT) method. The knowledge of band alignment and degree of carrier localization in BSFs are extremely important for evaluating their effects on device properties. Future research for better understanding and potential developments of the semi-polar LEDs is pointed out at the end.