Mit dem Erreichen der Grenzen der konventionellen MOSFET-Skalierung werden neue Techniken untersucht, um die Leistungsfähigkeit der CMOS-Technologie dem bisherigen Trend folgend weiter zu steigern. Einer dieser Ansätze ist die Verwendung mechanischer Verspannungen im Transistorkanal. Mechanische Verspannungen führen zu Kristalldeformationen und ändern die elektronische Bandstruktur von Silizium, so dass n- und p-MOSFETs mit verspannten Kanälen erhöhte Ladungsträgerbeweglichkeiten und demzufolge eine gesteigerte Leistungsfähigkeit aufweisen. Die vorliegende Arbeit beschäftigt sich mit den Auswirkungen mechanischer Verspannungen auf die elektronischen Eigenschaften planarer Silicon-On-Insulator-MOSFETs für Höchstleistungsanwendungen sowie mit deren Optimierung und technologischen Begrenzungen. Der Effekt der Verspannung auf die Bandstruktur von Silizium und die Ladungsträgerbeweglichkeit wird zunächst systematisch mit Hilfe der empirischen Pseudopotenzialmethode und der Deformationspotenzialtheorie untersucht. Verringerte Streuraten und kleinere effektive Massen als Folge der Aufspaltung der Energiebänder sowie von Bandverformungen sind der Hauptgrund für eine erhöhte Löcher- bzw. Elektronenbeweglichkeit. Die unterschiedlichen Konzepte zur Erzeugung der Verspannung werden kurz rekapituliert. Der Schwerpunkt der Untersuchungen liegt auf den verspannten Deckschichten, den Si1-xGex- bzw. Si1-yCy- Source/Drain-Gebieten, den verspannungsspeichernden Prozessen und den verspannten Substraten. Die starke Abhängigkeit dieser Verspannungstechniken von der Transistorstruktur macht die Nutzung numerischer Simulationen unabdingbar. So werden die Auswirkungen von Variationen der Transistorgeometrie sowie von Prozessparametern im Hinblick auf die Verspannung und die Drainstromänderungen der Transistoren neben den Messungen am gefertigten Transistor auch anhand numerischer Simulationen dargestellt und verglichen. Wesentliche Parameter für eine erhöhte Verspannung werden bestimmt und technologische Herausforderungen bei der Prozessintegration diskutiert. Die durchgeführten Simulationen und das erlangte Verständnis der Wirkungsweise der Verspannungstechniken ermöglichen es, das Potenzial dieser Verspannungstechniken für weitere Leistungssteigerungen in zukünftigen Technologiegenerationen abzuschätzen. Dadurch ist es möglich, die Prozessbedingungen und die Eigenschaften der fertigen Bauelemente im Hinblick auf eine gesteigerte Leistungsfähigkeit hin zu optimieren. Mit der weiteren Verkleinerung der Strukturgrößen der Bauelemente wird der zunehmende Einfluss der parasitären Source/Drain-Widerstände als Begrenzung der Effektivität der Verspannungstechniken identifiziert. Anschließend werden die Wechselwirkungen zwischen den einzelnen Verspannungstechniken hervorgehoben bzw. die gegebenenfalls auftretenden Einschränkungen angesprochen. Abschließend wird das Transportverhalten sowohl im linearen ohmschen Bereich als auch unter dem Einfluss hoher elektrischer Feldstärken analysiert und die deutlichen Unterschiede für die Leistungssteigerungen der verspannten n- und p-MOSFETs begründet. / As conventional MOSFET scaling is reaching its limits, several novel techniques are investigated to extend the CMOS roadmap. One of these techniques is the introduction of mechanical strain in the silicon transistor channel. Because strain changes the inter-atomic distances and thus the electronic band structure of silicon, ntype and p-type transistors with strained channels can show enhanced carrier mobility and performance. The purpose of this thesis is to analyze and understand the effects of strain on the electronic properties of planar silicon-on-insulator MOSFETs for high-performance applications as well as the optimization of various stress techniques and their technological limitations. First, the effect of strain on the electronic band structure of silicon and the carrier mobility is studied systematically using the empirical pseudopotential method and the deformation potential theory. Strain-induced energy band splitting and band deformations alter the electron and hole mobility through modulated effective masses and modified scattering rates. The various concepts for strain generation inside the transistor channel are reviewed. The focus of this work is on strained overlayer films, strained Si1-xGex and Si1-yCy in the source/drain regions, stress memorization techniques and strained substrates. It is shown, that strained silicon based improvements are highly sensitive to the device layout and geometry. For that reason, numerical simulations are indispensable to analyze the efficiency of the strain techniques to transfer strain into the channel. In close relation with experimental work the results from detailed simulation studies including parameter variations and material analyses are presented, as well as a thorough investigation of critical parameters to increase the strain in the transistor channel. Thus, the process conditions and the properties of the fabricated devices can be optimized with respect to higher performance. In addition, technological limitations are discussed and the potential of the different strain techniques for further performance enhancements in future technology generations is evaluated. With the continuing reduction in device dimensions the detrimental impact of the parasitic source/drain resistance on device performance is quantified and projected to be the bottleneck for strain-induced performance improvements. Next, the effects from a combination of individual strain techniques are studied and their interactions or possible restrictions are highlighted. Finally, the transport properties in the low-field transport regime as well as under high electrical fields are analyzed and the notable differences between strained n-type and p-type transistors are discussed.

Made available in DSpace on 2015-05-14T12:43:28Z (GMT). No. of bitstreams: 1 arquivototal.pdf: 2125510 bytes, checksum: aa04eddf6c4ebfdab57270cd91d4cd05 (MD5) Previous issue date: 2010-06-21 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / This paper describes the behavior of variable medial post-stressed vowel in nouns, in the dialect of the town of Sapé, located in the state of Paraiba. In this context, there were done two analyses. The first one is a variationist, in order to verify the effects of deletion of the medial post-stressed vowel, and compare the results with other studies of similar nature. To do so, we adopted the theoretical basis in Labov (1972) and Weinreich; Labov; Herzog (1968). The second analysis, phonological character, focused on analyzing the processes triggered either by resistance to syncope - the raising and rounding of the medial post-stressed vowels, based on Câmara Jr. (2002 [1970]) and Battisti; Vieira (2005) the former one is an occurrence of syncope: assimilation, resyllabification and restructuring of the feet, from two theoretical models Metrical Phonology: The Selkirk (1982) on the syllable, and Hayes (1995) on the accent. Under the Sociolinguistics Variation point of view, one analyzed statistically, linguistic and social variables that favor the deletion of the medial post-stressed vowel. The results were compared to those of other studies that aimed to investigate the same phenomenon, but with speech data from other regions of Brazil. It was found that the fact of year of schooling is the most important one in the medial poststressed vowels deletion in three out of four works under study, as well as the following phonological context, which was considered the most conducive to the process focused on this study. But Amaral (1999) and Lima (2008) state that the liquid vibrant is the most vibrant favoring the process of deletion, while Silva (2006) and Ramos (2009), state that the liquid side is the one. Thus, after the erasure process it occurs medial post-stressed vowel, the consonantal segment remaining after the deletion is incorporated herein to the stressed syllable, either to attack the unstressed final syllable, through resyllabification, causing a restructuring of syllabic feet, transforming them into penultimate stressed words as, respectively: música ~ musca and xícara ~ xicra. whenever this deletion does not occur, the medial post-stressed vowels [e] and [o] face prosecution for opening, for example, in a.bó.b[o].ra ~ a.bó.b[o].ra, and revolt in ár.v[o].re ~ ár.v[o]re. It is through this process of assimilation that a segment assimilates characteristics of the previous segment, as in física ~ [fizga], and/or segment, as in música ~ [musca]. / O presente trabalho descreve o comportamento variável das vogais postônicas mediais, em nomes, no dialeto da cidade de Sapé, localizada no interior do estado da Paraíba. Nesse contexto, objetivaram-se duas análises: uma variacionista, a fim de verificar os efeitos do apagamento da vogal postônica medial e comparar os resultados com outros estudos de mesma natureza. Para tanto, foram adotadas as propostas teóricas de Labov (1972) e de Weinreich, Labov e Herzog (1968). A segunda análise, de caráter fonológico, visou analisar os processos desencadeados ora pela resistência à síncope o alçamento e o arredondamento das vogais postônicas mediais, a partir da discussão de Câmara (2002 [1970]) e de Battisti e Vieira (2005) ora pela ocorrência da síncope: assimilação, ressilabação e reestruturação dos pés, a partir de dois modelos teóricos da Fonologia Métrica: o de Selkirk (1982), sobre sílaba, e o de Hayes (1995), sobre o acento. Sob a égide da Sociolinguística Variacionista, analisaram-se, estatisticamente, as variáveis linguísticas e sociais que favorecem o apagamento da vogal postônica medial. Os resultados foram comparados com os de outros trabalhos que tiveram por objetivo investigar o mesmo fenômeno, porém com dados de fala de outras regiões do Brasil. Constatou-se que o fator ano de escolarização é o mais relevante no processo de apagamento da vogal postônica medial em três dos quatro trabalhos em estudo, assim como o contexto fonológico seguinte, que foi tido por todos como sendo o mais propício ao processo aqui em estudo. Porém Amaral (1999) e Lima (2008) apontam a líquida vibrante como a mais favorecedora do processo de apagamento, ao passo que Silva (2006) e Ramos (2009), a líquida lateral. Assim sendo, depois de ocorrer o processo de apagamento da postônica medial, o segmento consonantal restante após o apagamento é incorporado ora à sílaba tônica, ora ao ataque da sílaba átona final, por meio da ressilabação, o que provoca uma reestruturação dos pés silábicos, transformando-as em palavras paroxítonas, como, respectivamente, em: música ~ musca e xícara ~ xicra. Quando não ocorre esse apagamento, as vogais [e] e [o] postônicas mediais sofrem processos de abertura, como por exemplo, em a.bó.b[o].ra ~ a.bó.b[o].ra, e de alçamento, em ár.v[o].re ~ ár.v[o].re. É por esse processo de assimilação que um segmento assimila características do segmento precedente, como em fizica ~ fizga, e/ou do segmento seguinte, como em música ~ musca.

L’influence du suffixe -ous sur le système phonologique de l’anglais est considérable. Son impact se matérialise tant au niveau de l’assignation des accents lexicaux, qu’au niveau de la matérialisation phonétique des voyelles accentuées. L’étude de ce suffixe offre une perspective globale du fonctionnement du système anglais puisque -ous se situe à la croisée des principes fondamentaux qui régissent le système accentuel anglais.Cette étude s’inscrit dans une perspective morphophonologique, cadre théorique privilégiant une interaction entre les domaines de la morphologie et de la phonologie. La prise en considération des frontières morphologiques dans le calcul de l’accent constitue le fondement même de cette théorie. Cependant, l’influence du suffixe -ous sur la structure accentuelle et phonétique des termes a fait l’objet d’une multitude d’approches dont nous présentons les résultats les plus significatifs dans la partie théorique. En contrepartie, les théories phonologiques sont confrontées les unes aux autres afin de déterminer leurs avantages et leurs inconvénients.L'assignation des accents lexicaux ne constitue toutefois pas le seul versant de ce travail. Le placement de l'accent sur la syllabe a une conséquence directe sur la réalisation phonétique de la voyelle appartenant à cette syllabe. Elle est pleinement réalisée, et l'alternance des syllabes accentuées et non accentuées participe à la notion de rythme en anglais. ..... Cette étude se veut avant tout un état des lieux du comportement du suffixe -ous. Elle vise également à confronter les règles précédemment établies à la réalité d'une étude quantitative, dans le but de faire émerger de nouveaux phénomènes imputables au suffixe / The influence of the suffix -ous on the English phonological system is considerable. Its impact is materialized on word-stress assignment, as well as on the phonetic realisation of stressed vowels. The study of this particular suffix generates a global perspective on the functioning of the English system since -ous is a blend of the fundamental principles which rule the English stress system. This analysis falls within the framework of the morphophonological theory, which favours an interaction between the morphological and phonological levels. The concept of morphological boundary is essential to the operation of word-stress assignment and represents a key-notion inside this theoretical framework. However, the impact of the suffix -ous on word-stress assignment and on the pronunciation of stressed vowels has already been investigated through several theoretical approaches. The most significant results of these previous studies are expounded in the theoretical part. The phonological frameworks are then compared in order to determine their assets and their drawbacks. Word-stress assignment only represents the first side of this work. Indeed, the assignment of primary stress on the syllabic structure of a word has a consequence on the phonetic realisation of stressed vowels. They are "fully" realised, and the succession of stressed and unstressed syllabes creates the notion of rythm in English. Resorting to spelling enables to predict the pronunciation of stressed vowels through the application of a hierarchical system of rules. These rules, elaborated on the particularities of English spelling, operate a transfer from spelling to sounds......

Esta pesquisa analisa as vogais médias tônicas anteriores [ε] e [e] e posteriores [ɔ] e [o], em formas nominais e verbais na 1ª pessoa do singular e na 3ª pessoa do singular e do plural no presente do indicativo, especificamente, o processo de metafonia das vogais médias /e/ e /o/, as quais se assimilam em /ε/ e /ᴐ/ em posição tônica. Os objetivos gerais desta investigação são descrever e quantificar a ocorrência de metafonia e, posteriormente, analisar em quais palavras há regularidade ou não. Como objetivos específicos têm-se: i) compilar e etiquetar um corpus oral, espontâneo, sincrônico e regional, a partir de programas de rádio produzidos na cidade de Ituiutaba, Minas Gerais; ii) descrever as características do corpus a ser compilado; iii) investigar a alternância do timbre das vogais médias em posição tônica; iv) identificar ocorrências de metafonia nominal e verbal das vogais médias em posição tônica; v) descrever os casos de metafonia nominal e verbal identificados; vi) analisar as prováveis causas para a variação das vogais médias. Para a realização da análise proposta, adotamos como base teórico-metodológica modelos multi-representacionais: a Fonologia de Uso (BYBEE, 2001) e a Teoria de Exemplares (PIERREHUMBERT, 2001), aliados aos preceitos da Linguística de Corpus (BEBER SARDINHA, 2004). O corpus está constituído de 16 programas radiofônicos – oito políticos e oito religiosos – produzidos na cidade de Ituiutaba-MG, com gravações de aproximadamente 20 a 40 minutos cada programa. Constatamos, por meio dos dados gerados pelo programa WordSmith Tools®, versão 6.0 (SCOTT, 2012), que as formas analisadas apresentam pouca variação, o que mostra que a metafonia é um processo já lexicalizado para os participantes dos programas radiofônicos analisados. Concluímos que os resultados convergem com a proposta da Fonologia de Uso (BYBEE, 2001; PHILLIPS, 1984) de que as palavras menos frequentes, que não têm ambiente fonético propício a mudanças, são alteradas primeiramente. / This research analyzes the average previous stressed vowels [ε] and [e] and later [ɔ] and [o] in nominal and verbal forms in the 1st person singular and 3rd person singular and plural in the present tense, specifically the umlaut process of mid vowels /e/ and /o/, which assimilate in /ε/ and /ᴐ/ in stressed position. The general objective of this research is to describe and quantify the occurrence of umlaut and subsequently analyze in which words there is regularity or not. As specific objectives we have: i) to compile and to label an oral, spontaneous, synchronic and regional corpus, from radio programs produced in the city of Ituiutaba, Minas Gerais; ii) to describe the characteristics of the corpus to be compiled; iii) to investigate the alternating timbre of mid vowels in stressed position; iv) to identify instances of nominal and verbal umlaut of the middle vowels in stressed position; v) to describe the identified cases of nominal and verbal umlaut; vi) to analyze the probable causes for the variation of the middle vowels. To perform the proposed analysis, we have adopted as a theoretical-methodological basis multi-representational models: Phonology of Use (BYBEE, 2001) and Exemplar Theory (PIERREHUMBERT, 2001) combined with the precepts of Corpus Linguistics (BEBER SARDINHA, 2004). The corpus consisted of 16 radio programs – eight political and eight religious – from the city of Ituiutaba-MG, with recordings of about 20 to 40 minutes. We note, by means of the results generated by WordSmith Tools® software, version 6.0 (SCOTT, 2012), that the analyzed forms show little variation, which shows that the umlaut is a process already lexicalized in participants of the radio programs analyzed. We conclude that the results converge with the proposal of the Phonology of Use (BYBEE, 2001; PHILLIPS, 1984) that less frequent words that have no phonetic environment conducive to change, are changed first. / Dissertação (Mestrado)

My master's thesis aims to design a bridge construction spanning road III/443 over road I/44. Three versions were created one of which has been developed further. It is a three span bridge with a total spread of 77.5 meters. Proposal and evaluation of bridge construction is done unassisted. Static analysis is done using Scia Engineer program. Construcion evaluation is done by valid EU norms ČSN EN 1992-1-1. Mechanical drawing, building procedure and visualisation is also included.

The content of the thesis is to solve the relocation of railroad and bicycle path. I tis a bridge with five field. 2 studies were designed, one of which was elaborated within the Framework of this thesis. Was selected option no. 1 concrete prefabricated T-beams with coupled concrete slab The static model was created in Scia Engineer 18.1. and reports were processed manually, according to EC. The effects of wind, snow, acceleration and braking forces have been neglected.

Diploma thesis is focused on design of the road bridge across the river Moravská Dyje, close the village Stare Hobzí. The are designed 3 studies of the bridge, of wich the trapezoidal slabroad with pitches is chosen for further development. Slabroad is assessed at ultimate limit state and serviceability by the valid standarts. Calculation of internal forces is made by computer program Scia Engineer 16.0.

No description available.

The main aim of the thesis is to design a Kindergarten. It is situated on the west outskirt of the Havlíčkův Brod on the plot no. 653/1 in the cadastral area Havlíčkův Brod. The plot is sloped to the south. The building has two above-ground floors. The ground floor is cross shaped, and we can consist of it on four parts. Three are classrooms with locker room, sanitary facilities for children and bed storeroom. The last part is technical facilities (storerooms, halls, utility room, control room and room for serving food). On the first floor there are offices for teachers, staff room, director’s room, and locker room for employees (cooks, cleaners). Food will be imported to kindergarten. My project is designed like a masonry wall system from sand-lime blocks Silka. Non-load bearing walls are from aerated concrete blocks Ytong. Floor structures are designed as pre-stressed concrete panels. Roof above the ground floor is flat intensive green roof and roof above the first ground floor is flat extensive green roof. The building is heated by two gas boilers in the utility room and and the whole is forcibly ventilated according to two air-conditioning units. I use Archicad 22 for designing my Kindergarten.

No description available.